Abstract: A method and mask having balance patterns for reducing and/or preventing chemical flare from occurring in a photoresist between a first mask region and a second mask region. Balance patterns formed on the mask may have a desired and/or predetermined pitch and may be regularly arranged. If the pitch of the balance patterns is equal to or smaller than a threshold value, the balance patterns may not allow the patterns to be transferred onto a photoresist. In addition, the photoresist corresponding to the balance patterns may be either completely removed or completely remain depending on the duty of the balance patterns.

Abstract: Provided are a nonvolatile memory device and a method of manufacturing the same. A floating gate electrode of the nonvolatile memory device may have a cross-shaped section as taken along a direction extending along a control gate electrode. The floating gate electrode may have an inverse T-shaped section as taken along a direction extending along an active region perpendicular to the control gate electrode. The floating gate electrode may include a lower gate pattern, a middle gate pattern and an upper gate pattern sequentially disposed on a gate insulation layer, in which the middle gate pattern is larger in width than the lower gate pattern and the upper gate pattern. A boundary between the middle gate pattern and the upper gate pattern may have a rounded corner.

Abstract: Provided is a method for forming patterns of a semiconductor device. According to the method, first mask patterns may be formed on a substrate, and second mask patterns may be formed on sidewalls of each first mask pattern. Third mask patterns may fill spaces formed between adjacent second mask patterns, and the second mask patterns may be removed. A portion of the substrate may then be removed using the first and third mask patterns as etch masks.

Abstract: Methods of fabricating a semiconductor device are provided. Methods of forming a finer pattern of a semiconductor device using a buffer layer for retarding, or preventing, bridge formation between patterns in the formation of a finer pattern below resolution limits of a photolithography process by double patterning are also provided. A first hard mask layer and/or a second hard mask layer may be formed on a layer of a substrate to be etched. A first etch mask pattern of a first pitch may be formed on the second hard mask layer. After a buffer layer is formed on the overall surface of the substrate, a second etch mask pattern of a second pitch may be formed thereon in a region between the first etch mask pattern. The buffer layer may be anisotropically etched using the second etch mask pattern as an etch mask, forming a buffer layer pattern.

Abstract: There are provided a semiconductor device having an overlay measurement mark, and a method of fabricating the same. The semiconductor device includes a scribe line region disposed on a semiconductor substrate. A first main scale layer having a first group of line and space patterns and a second group of line and space patterns is disposed on the scribe line region. Line-shaped second main scale patterns are disposed on space regions of the first group of the line and space patterns. Line-shaped vernier scale patterns are disposed on space regions of the second group of the line and space patterns. In the method, a first main scale layer having a first group of line and space patterns and a second group of line and space patterns is formed on a semiconductor substrate. Line-shaped second main scale patterns are formed on space regions of the first group of the line and space patterns. Line-shaped vernier scale patterns are formed on space regions of the second group of the line and space patterns.

Abstract: The present invention provides an over-coating composition comprising a basic compound for coating a photoresist composition to provide a vertical photoresist pattern.

Abstract: Disclosed is a method of forming a pattern. A first organic polymer layer is formed on a substrate on which an underlying layer, and then a second organic polymer layer, which has an opening partially exposing the first organic polymer layer, is formed on the first organic polymer layer. Next, a silicon-containing polymer layer is formed on the second organic polymer layer to cover the opening. The silicon-containing polymer layer is oxidized and simultaneously the second organic polymer layer and the first organic polymer layer are ashed by oxygen plasma to form a pattern having an anisotropy-shape. The underlying layer is etched using the silicon-containing polymer layer and the first organic polymer layer as an etching mask to form a pattern.

Abstract: A method of forming a pattern for a semiconductor device is disclosed. According to the method, a lower photoresist layer is formed on a lower layer and an upper photoresist pattern including a silylated layer is formed on the lower photoresist layer. The upper photoresist pattern is used as a mask for etching the lower photoresist layer to thereby form a lower photoresist pattern. The upper and lower photoresist patterns are used as a mask for etching the lower layer beneath the lower photoresist pattern.

Abstract: Photoresist monomers, photoresist polymers prepared thereof, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers comprising maleimide monomer represented by Formula 1, and a composition comprising the polymer thereof are disclosed. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and can be developed in an aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, and it is suitable for a process using ultraviolet light source such as VUV (157 nm) wherein, X1, X2, R1, R2 and R3 are defined in the specification.

Abstract: Disclosed is a method of forming a fine pattern in a semiconductor device using a photolithography process, which comprises: coating a photoresist layer for an I-line and a positive type ArF photoresist layer on a semiconductor substrate that includes a conductive layer; performing exposure and a first baking process on the resultant substrate by using an etch-mask of a desired pattern to produce alcohol radicals (OH−) or carboxyl acid (COOH) in the positive type ArF photoresist layer, in which a silylation reaction can be produced; removing the etch-mask; performing a development process to the resultant structure to form a first photoresist pattern; performing exposure and a second baking process on the substrate that includes the first photoresist pattern; performing a silylation process to the substrate to which the second baking process has been performed, by using an HMDS to form a silicon oxide layer on the surface of the first photoresist pattern through reaction between the alcohol radicals (OH

Abstract: A photoresist polymer for a top-surface imaging process by silylation (TIPS), and a photoresist composition comprising the same. The protecting group of the present photoresist polymer is selectively protected in an exposed region, and thus a hydroxyl group is generated. The hydroxyl group reacts with the silylation agent to cause a silylation process. Accordingly, when the photoresist film is dry-developed, the exposed region only remains to form a negative pattern. In addition, the present photoresist composition has excellent adhesiveness to a substrate, thus preventing a pattern collapse in forming a minute pattern. As a result, the present photoresist composition is suitable for a lithography process using light sources such as ArF (193 nm), VUV (157 nm) and EUV (13 nm).

Abstract: The present invention provides an over-coating composition comprising a basic compound for coating a photoresist composition to provide a vertical photoresist pattern.

Abstract: The present invention provides a method for reducing or eliminating a poor pattern formation on a photoresist film by contacting the photoresist film with an alkaline solution prior to its exposure to light. Methods of the present invention significantly reduce or prevent T-topping and top-loss.

Abstract: A process for producing a photoresist pattern is disclosed. In particular, the disclosed process for forming a photoresist pattern reduces or prevents poor quality photoresist patterns formation, especially when a high light absorbing (i.e., low transmittance) photoresist resin is used. In one aspect, a photoresist film which has been exposed to light is treated with a gas phase basic compound to produce a substantially vertical photoresist pattern.

Abstract: Photoresist compositions for a Top-surface Imaging Process by Silylation (TIPS), and a process for forming a positive pattern according to the TIPS using the same. The photoresist composition for the TIPS comprises a cross-linker of following Formula 1 or 2. A protecting group of the cross-linker and a hydroxyl group of the photoresist polymer are selectively crosslinked in the exposed region, and the residual hydroxyl group reacts to a silylating agent in the non-exposed region by silylation. Thus, the non-exposed region only remains after the dry-development, thereby forming a positive pattern. In addition, the photoresist composition of the present invention is suitable for the TIPS lithography using light sources such as ArF (193 nm), VUV (157 nm) and EUV (13 nm). wherein, R1, R2, R3, R4, R5, R6 and R7 are as defined in the specification.

Abstract: Disclosed is a method of forming a fine pattern in a semiconductor device using a photolithography process, which comprises: coating a photoresist layer for an I-line and a positive type ArF photoresist layer on a semiconductor substrate that includes a conductive layer; performing exposure and a first baking process on the resultant substrate by using an etch-mask of a desired pattern to produce alcohol radicals (OH−) or carboxyl acid (COOH) in the positive type ArF photoresist layer, in which a silylation reaction can be produced; removing the etch-mask; performing a development process to the resultant structure to form a first photoresist pattern; performing exposure and a second baking process on the substrate that includes the first photoresist pattern; performing a silylation process to the substrate to which the second baking process has been performed, by using an HMDS to form a silicon oxide layer on the surface of the first photoresist pattern through reaction between the alcohol radicals (OH

Abstract: The present invention provides photoresist compositions for a Top-surface Imaging Process by Silylation (TIPS) and processes for using the same. The photoresist composition comprising a photoresist resin, a photoacid generator, an organic compound, and an amphoteric compound. The amphoteric compound prevents or reduces the amount of acid diffusion into the unexposed area and improves the contrast between the exposed and the unexposed areas. This reduction or prevention of acid diffusion into the unexposed areas reduces line edge roughness (LER).

Abstract: A method for forming a micro-pattern of a semiconductor substrate, and more particularly, to a method for preventing defects in a photoresist pattern, such as undercut or footing, due to inter-mixing between an organic anti-reflective coating and a photoresist by forming a carbonized layer on the surface of the organic anti-reflective coating by a curing process like ion implantation or E-beam curing.

Abstract: A method is disclosed for forming fine photoresist patterns on semiconductor devices using a modified, two-step dry develop process using a fluorine-containing gas to produce hydrophobic SiOx passivation layers on the sidewalls of the photoresist patterns. These passivation layers increase the structural stability of the fine photoresist patterns and prevent moisture within an air from cohering on the photoresist patterns when the semiconductor substrate is subsequently exposed to the air. Accordingly, the present invention improves the processing margins for very high aspect ratio photoresist patterns resulting in reduced rework and increased yield on very highly integrated semiconductor devices.

Abstract: The present invention relates to novel monomers which can be used to form polymers which are useful in a photolithography employing a light source in the far ultraviolet region of the light spectrum, copolymers thereof, and photoresist compositions prepared therefrom. Photoresist monomers of the present invention are represented by the following Chemical Formula 1: wherein, R is substituted or non-substituted linear or branched (C1-C10) alkyl, substituted or non-substituted (C1-C10) ether, substituted or non-substituted (C1-C10) ester, or substituted or non-substituted (C1-C10) ketone; X and Y are independently CH2, CH2CH2, oxygen or sulfur; and i is 0 or an integer of 1 to 2.