Abstract: The present invention provides to an amine contamination-protecting top-coating composition and a process for using the same. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof, and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F2 (157 nm), E-beam, ion beam and extremely ultraviolet (EUV).

Abstract: Photoresist monomers, photoresist polymers prepared thereof, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers comprising maleimide monomer represented by Formula 1, and a composition comprising the polymer thereof are disclosed. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and can be developed in an aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, and it is suitable for a process using ultraviolet light source such as VUV (157 nm).

Abstract: The present invention relates to novel monomers which can be used to form polymers which are useful in a photolithography employing a light source in the far ultraviolet region of the light spectrum, copolymers thereof, and photoresist compositions prepared therefrom.

Abstract: A method for forming a micro-pattern of a semiconductor substrate, and more particularly, to a method for preventing defects in a photoresist pattern, such as undercut or footing, due to inter-mixing between an organic anti-reflective coating and a photoresist by forming a carbonized layer on the surface of the organic anti-reflective coating by a curing process like ion implantation or E-beam curing.

Abstract: The present invention relates to novel monomers and their polymers, which are useful in a photolithography employing a light source in the far ultraviolet region of the light spectrum, copolymers thereof, and photoresist compositions prepared therefrom. Photoresist monomers of the present invention are represented by the following Chemical Formula 1: wherein, R is substituted or non-substituted linear or branched (C1-C10)alkyl, substituted or non-substituted (C1-C10)ether, substituted or non-substituted (C1-C10)ester, or substituted or non-substituted (C1-C10)ketone; X and Y are independently CH2, CH2CH2, oxygen or sulfur; and i is 0 or an integer of 1 to 2.

Abstract: The present invention relates to a phenylenediamine derivative of the formula: where B and B′ are defined herein. The phenylenediamine derivatives of the present invention are useful as an additive in a photoresist composition. For example, it has been found that photoresist. compositions comprising the phenylenediamine derivative of the present invention have a high energy latitude margin, an improved contrast value, and enhanced post exposure delay stability.

Abstract: A photoresist polymer for a top-surface imaging process by silylation (TIPS), and a photoresist composition comprising the same. The protecting group of the present photoresist polymer is selectively protected in an exposed region, and thus a hydroxyl group is generated. The hydroxyl group reacts with the silylation agent to cause a silylation process. Accordingly, when the photoresist film is dry-developed, the exposed region only remains to form a negative pattern. In addition, the present photoresist composition has excellent adhesiveness to a substrate, thus preventing a pattern collapse in forming a minute pattern. As a result, the present photoresist composition is suitable for a lithography process using light sources such as ArF (193 nm), VUV (157 nm) and EUV (13 nm).

Abstract: The present invention provides photoresist polymers and photoresist compositions comprising the same. The photoresist polymer is represented by the following Chemical Formula 5. Photoresist compositions containing the polymers of the present invention have superior transmittance at 157 nm wavelength, etching resistance, heat resistance, and adhesiveness. In addition, photoresist compositions of the present invention can be developed easily in 2.38 wt % aqueous TMAH solution, and are therefore suitable for lithography processes using a 157 nm wavelength-light source for fabricating a minute circuit of a high integration semiconductor device: wherein R, R*, X, Y, V, W, i, j, w, x, y and z are as described herein.

Abstract: The present invention discloses photoresist polymers and photoresist compositions containing the same. The photoresist polymer comprises repeating units derived from (a) a compound of Chemical Formula 1; (b) a compound of Chemical Formula 2; (c) a compound of Chemical Formula 3; and optionally (d) maleic anhydride. Photoresist compositions containing the polymers of the present invention have superior etching resistance, heat resistance and adhesiveness, are easily developed in the 2.38% aqueous TMAH solution, and are therefore suitable for lithography processes using ultraviolet light sources when fabricating a minute circuit of a high integration semiconductor device: wherein R, R*, R3, R4, R′, R″, R′″, X, Y, V, W, i and j are as described herein.

Abstract: Photoresist compositions for a Top-surface Imaging Process by Silylation (TIPS), and a process for forming a positive pattern according to the TIPS using the same. The photoresist composition for the TIPS comprises a cross-linker of following Formula 1 or 2. A protecting group of the cross-linker and a hydroxyl group of the photoresist polymer are selectively crosslinked in the exposed region, and the residual hydroxyl group reacts to a silylating agent in the non-exposed region by silylation. Thus, the non-exposed region only remains after the dry-development, thereby forming a positive pattern. In addition, the photoresist composition of the present invention is suitable for the TIPS lithography using light sources such as ArF (193 nm), VUV (157 nm) and EUV (13 nm).

Abstract: The present invention relates to a copolymer resin for a photoresist used with ultra-short wavelength light source such as KrF or ArF, a process for preparation thereof, and a photoresist comprising said resin. By introducing 2,3-di-t-butyl-5-norbornene-2,3-dicarboxylate unit into the structure of a norbornene-maleic anhydride copolymer, the copolymer resin according to the present invention is easily prepared by conventional radical polymerization, has high transparency at 193 nm wavelength, provides increased etching resistance, prevents the top loss phenomenon, exhibits enhanced adhesive strength due to increasing protection ratio in the copolymer resin, and shows excellent resolution.

Abstract: A method is disclosed for forming fine photoresist patterns on semiconductor devices using a modified, two-step dry develop process using a fluorine-containing gas to produce hydrophobic SiOx passivation layers on the sidewalls of the photoresist patterns. These passivation layers increase the structural stability of the fine photoresist patterns and prevent moisture within an air from cohering on the photoresist patterns when the semiconductor substrate is subsequently exposed to the air, Accordingly, the present invention improves the processing margins for very high aspect ratio photoresist patterns resulting in reduced rework and increased yield on very highly integrated semiconductor devices.

Abstract: The present invention provides a process for producing a photoresist pattern. In particular, the present invention provides a process for forming a photoresist pattern which reduces or prevents poor quality photoresist patterns formation, especially when a high light absorbing (i.e., low transmittance) photoresist resin is used. In one aspect of the present invention, a photoresist film which has been exposed to light is treated with a gas phase basic compound to produce a substantially vertical photoresist pattern.

Abstract: The present invention provides an over-coating composition comprising a basic compound for coating a photoresist composition to provide a vertical photoresist pattern.

Abstract: The present invention relates to novel monomers which can be used to form photoresist polymers and photoresist compositions using the same which are suitable for photolithography processes employing a far ultraviolet light source, copolymers thereof. Preferred monomers of the invention are represented by Chemical Formula 1 below: wherein, X1 and X2 individually represent CH2, CH2CH2, oxygen or sulfur; Y represents CH2 or oxygen; R1 represents H or CH3, R′ and R″ individually represent substituted or non-substituted (C0-C3) alkyl; and i represents an integer from 0 to 3.

Abstract: The present invention discloses a cross-linking monomer for a photoresist polymer represented by following Chemical Formula 1: <Chemical Formula 1> wherein, V represents CH2, CH2CH2, oxygen or sulfur; Y is selected from the group consisting of straight or branched C1-10 alkyl, oxygen, and straight or branched C1-10 ether; R′ and R″ individually represent H or CH3; i is a number of 1 to 5; and n is a number of 0 to 3; and a process for preparing a photoresist copolymer comprising the same.

Abstract: A photoresist film superior in etch resistance and PED stability, as well as transmittance to deep UV, having a backbone of polymethylmethacrylate grafted with piperidine moiety of which the nitrogen atom acts as a base.

Abstract: A photoresist composition suitable for forming fine patterns of semiconductor devices, comprising a resin, a photosensitive acid generator and additives. The resin has a cyclic structure which is superior in thermal resistance and etch resistance as well as allowing for a light source of 200 nm or a shorter wavelength.

Abstract: A photoresist film superior in etch resistance and PED stability, as well as transmittance to deep UV, having a backbone of polymethylmethacrylate grafted with piperidine moiety of which the nitrogen atom acts as a base.