Abstract: A flash memory device can include a semiconductor pin protruding from a semiconductor substrate of a first conductive type to extend in one direction, a first doped layer and a second doped layer provided to an upper portion and a lower portion of the semiconductor pin, respectively, to be vertically spaced apart from each other, the first and second doped layers having a second conductive type, and a plurality of word lines extending over a top and a sidewall of the semiconductor pin to intersect the direction. The word lines overlap the first doped layer and the second doped layer to have vertical channels.

Abstract: A nonvolatile memory device, includes a semiconductor substrate having a bottom part, a second vertical part positioned vertically on the bottom part, and a first vertical part having a width smaller than a width of the second vertical part and positioned on the second vertical part to have a boundary step therebetween; a charge trap layer disposed on a lateral surface of the first vertical part and on an upper surface of the boundary step; and a control gate electrode disposed on an upper surface of the bottom part and on lateral surfaces of the second vertical part and the charge trap layer.

Abstract: A gas sensor and method thereof are provided. The example gas sensor may include first and second electrodes formed on a substrate, a carbon nanotube connecting the first and second electrodes on the substrate, a light source disposed above the carbon nanotube and an ampere meter measuring current flowing between the first and second electrodes.

Abstract: Embodiments of the invention include a non-volatile memory device manufactured using ion-implantation, and a method of manufacturing the same. A dielectric layer may be formed on a semiconductor substrate, and an ion implantation layer, which may be used as a charge trapping site, may be formed by ion implantation with Si or Ge. Then, an annealing process may be performed. Subsequently, a process for forming a transistor on the dielectric layer may be performed.