Abstract: Example embodiments include a level shifting write driver in a sense amplifier for a resistive type memory. The write driver may include a cross-coupled latch circuit, a first output section, a second output section, and an input section. The first output section includes one or more first driving transistors to drive a first current through the first output section and not through the cross-coupled latch. The second output section includes one or more second driving transistors configured to drive a second current through the second output section and not through the cross-coupled latch. The current flows of the outputs sections are isolated from the latch circuit. In some embodiments, no two PMOS type transistors are serially connected, thereby reducing the consumption of die area. In some embodiments, a single control signal is used to operate the write driver.

Abstract: One embodiment of the oscillator includes a first starved inverter and a second starved inverter. An inner inverter of the second starved inverter is cross-coupled to an inner inverter of the first starved inverter. The oscillator further includes a first inverter connected to output of the inner inverter of the first starved inverter, and a second inverter connected to output of the inner inverter of the second starved inverter.

Abstract: A nonvolatile memory device comprises a nonvolatile cell array comprising a memory cell and a reference cell, a clamping circuit electrically connected to the memory cell and configured to clamp a voltage applied to a data sensing line during a read operation, and a clamping voltage generation unit configured to generate a clamping voltage responsive to a first voltage having a level based on the reference cell, and to feed back the clamping voltage to the clamping circuit.

Abstract: A magnetic memory device such as a magnetic random access memory (MRAM), and a memory module and a memory system on which the magnetic memory device is mounted are disclosed. The MRAM includes magnetic memory cells each of which varies between at least two states according to a magnetization direction and an interface unit that provides various interface functions. The memory module includes a module board and at least one MRAM chip mounted on the module board, and further includes a buffer chip that manages an operation of the at least one MRAM chip. The memory system includes the MRAM and a memory controller that communicates with the MRAM, and may communicate an electric-to-optical conversion signal or an optical-to-electric conversion signal by using an optical link that is connected between the MRAM and the memory controller.

Abstract: Example embodiments include a resistive type memory sense amplifier circuit including differential output terminals, first and second input terminals, a pre-charge section, and other components arranged so that current is re-used during at least a “set” or “amplification” stage of the sense amplifier circuit, thereby reducing overall current consumption of the circuit, and improving noise immunity. A voltage level of a high-impedance output terminal is caused to swing in response to a delta average current between a reference line current and a bit line current. During a “go” or “latch” stage of operation, a logical value “0” or “1” is latched at the differential output terminals based on positive feedback of a latch circuit. Also disclosed is a current mirror circuit, which can be used in conjunction with the disclosed sense amplifier circuit. In yet another embodiment, a sense amplifier circuit includes the capability of read/re-write operation.

Abstract: A semiconductor memory device includes a cell array including one or more bank groups, where each of the one or more bank groups includes a plurality of banks and each of the plurality of banks includes a plurality of spin transfer torque magneto resistive random access memory (STT-MRAM) cells. The semiconductor memory device further includes a source voltage generating unit for applying a voltage to a source line connected to the each of the plurality of STT-MRAM cells, and a command decoder for decoding a command from an external source in order to perform read and write operations on the plurality of STT-MRAM cells.

Abstract: Example embodiments include a resistive type memory current sense amplifier circuit including differential output terminals, first and second input terminals, pre-charge transistors, and current modulating transistors coupled directly to the pre-charge transistors. The pre-charge configuration provides high peak currents to charge the bit line and reference line during a “ready” or “pre-charge” stage of operation of the current sense amplifier circuit. The current modulating transistors are configured to operate in a saturation region mode during at least a “set” or “amplification” stage. The current modulating transistors continuously average a bit line current and a reference line current during the “set” or “amplification” stage, thereby improving noise immunity of the circuit. During a “go” or “latch” stage of operation, a logical value “0” or “1” is latched at the differential output terminals based on positive feedback of a latch circuit.

Abstract: A magnetic random access memory (MRAM), and a memory module, memory system including the same, and method for controlling the same are disclosed. The MRAM includes magnetic memory cells configured to change between at least two states according to a magnetization direction, and a mode register supporting a plurality of operational modes.

Abstract: The disclosure includes assays and methods for screening for risk of Down syndrome and/or trisomy 21 in a fetus. The assays and methods comprise determining the level of at least one biomarker selected from mucin 13 (MUC13), bile salt-activated lipase (CEL), dipeptidyl peptidase 4 (DPP4), carboxypeptidase A1 (CPA1), amyloid precursor protein (APP) and tenascin-C (TNC-C) polypeptides in a test biological sample from a pregnant subject, wherein a decreased level of MUC13, CEL, DPP4, and/or CPA1 polypeptide and/or an increased level of APP and/or TNC-C polypeptide in the test biological sample compared to a corresponding reference biomarker polypeptide level indicates an increased risk of Down syndrome or trisomy 21 in the fetus. The disclosure also includes assays, compositions, immunoassays, and kits for performing the methods disclosed herein.

Abstract: Provided is a memory device having a first switch configured to receive a first CSL signal to input or output data. A second switch is configured to receive a second CSL signal. A sensing and latch circuit (SLC) is coupled between the first and second switches. And at least one memory cell is coupled to the second switch. The second switch is configured to control timing of read or write operations of the at least one memory cell in response to the second CSL signal, e.g., where a read operation can be performed in not more than about 5 ns. The SLC operates as a latch in a write mode and as an amplifier in a read mode. The memory device may comprise part of a memory system or other apparatus including such memory device or system. Methods of performing read and write operations using such memory device are also provided.

Abstract: A nonvolatile memory device comprises a nonvolatile cell array comprising a memory cell and a reference cell, a clamping circuit electrically connected to the memory cell and configured to clamp a voltage applied to a data sensing line during a read operation, and a clamping voltage generation unit configured to generate a clamping voltage responsive to a first voltage having a level based on the reference cell, and to feed back the clamping voltage to the clamping circuit.

Abstract: A non-volatile memory device including a cell array, which includes a plurality of memory cells, and a sense amplification circuit. The sense amplification circuit is configured to receive a data voltage of a memory cell, a first reference voltage and a second reference voltage during a data read operation of the memory cell, generate differential output signals based on a voltage level difference between the data voltage and the first and second reference voltages, and output the differential output signals as data read from the memory cell.

Abstract: The disclosure includes assays and methods for screening for risk of Down syndrome and/or trisomy 21 in a fetus. The assays and methods comprise determining the level of at least one biomarker selected from mucin 13 (MUC13), bile salt-activated lipase (CEL), dipeptidyl peptidase 4 (DPP4), carboxypeptidase A1 (CPA1), amyloid precursor protein (APP) and tenascin-C (TNC-C) polypeptides in a test biological sample from a pregnant subject, wherein a decreased level of MUC13, CEL, DPP4, and/or CPA1 polypeptide and/or an increased level of APP and/or TNC-C polypeptide in the test biological sample compared to a corresponding reference biomarker polypeptide level indicates an increased risk of Down syndrome or trisomy 21 in the fetus. The disclosure also includes assays, compositions, immunoassays, and kits for performing the methods disclosed herein.

Abstract: A signal transceiver may include three transmission lines, a signal transmission unit, and/or a signal reception unit. The signal transmission unit may be configured encode first through third transmission data to generate first through third data and transmit the first through third data through the three transmission lines. The signal transmission unit may be configured to generate each of the first through third data at one of four or more voltage level. The signal reception unit may be configured to receive the first through third data and monitor voltage differences between the first through third data to restore the first through third data into first through third reception data.

Abstract: One embodiment of the oscillator includes a first starved inverter and a second starved inverter. An inner inverter of the second starved inverter is cross-coupled to an inner inverter of the first starved inverter. The oscillator further includes a first inverter connected to output of the inner inverter of the first starved inverter, and a second inverter connected to output of the inner inverter of the second starved inverter.

Abstract: One embodiment of the oscillator includes a first starved inverter and a second starved inverter. An inner inverter of the second starved inverter is cross-coupled to an inner inverter of the first starved inverter. The oscillator further includes a first inverter connected to output of the inner inverter of the first starved inverter, and a second inverter connected to output of the inner inverter of the second starved inverter.

Abstract: In one embodiment, the differential amplifier (DA) includes a first inverter inverting a first input signal and outputting the inverted first input signal to a current supply controller and a current drain controller. A second inverter inverts the first input signal and outputs the inverted first input signal as an output signal of the DA. The current supply controller supplies current to the first and second inverters in response to the inverted first input signal output from the first inverter during a first period. The current drain controller drains current from the first and second inverters in response to the inverted first input signal output from the first inverter during a second period. The output signal of the DA and the first input signal have differential phases with respect to each other and oscillate between logic high and low levels during the first period and the second period.

Abstract: A circuit for outputting an amplified clock signal is disclosed. The circuit includes a first input terminal for inputting a first clock signal, a second input terminal for inputting a second clock signal, a first amplifier circuit for amplifying the first clock signal and outputting a first amplified clock signal at a first output terminal, and a second amplifier circuit for amplifying the second clock signal and outputting a second amplified clock signal at a second output terminal. The circuit additionally includes a level maintenance circuit connected to the first output terminal and the second output terminal. The circuit further includes an output circuit connected to the first output terminal and the second output terminal and configured to output a further amplified clock signal based on the first amplified clock signal and the second amplified clock signal. The level maintenance circuit is configured to reduce duty distortion in the further amplified clock signal.

Abstract: A voltage-controlled oscillator comprises a first oscillator and a second oscillator. The first oscillator may generate a plurality of intermediate clock signals at a plurality of first nodes, multiply connected to a plurality of first ring shape circuits, in response to a control voltage. The plurality of intermediate clock signals may have a different phase from each other and a same phase difference with each other. The second oscillator may generate a plurality of output clock signals at a plurality of second nodes, multiply connected to a plurality of second ring shape circuits, by changing a voltage level of the intermediate clock signals. The plurality of second ring shape circuits may pass the plurality of first nodes.

Abstract: Provided is a logic gate device capable of performing multiple logic operations by using a single logic gate circuit. The multi-functional logic gate device includes a pull-up switching unit having input switches of a first group being respectively connected to multiple input terminals and selection switches of the first group connected to either a selection terminal or a logically inverted selection terminal, the pull-up switching unit electrically connecting the input switches of the first group in series or in parallel between a power source and an output terminal according to logic levels of the selection terminal and the inverted selection terminal.