Abstract: A temperature compensated crystal oscillator has first and second layered structures, an IC chip, a crystal vibrating chip, a resin mold portion and a metal cover. Each of the first and second layered structures has a cavity formed therein. The cavity formed in the second layered structure does not overlap with the cavity of the first layered structure. The IC chip is inserted into the cavity of the first layered structure. The crystal vibrating chip is inserted into the cavity of the second layered structure. The resin mold portion is formed by charging resin into the cavity of the first layered structure. The metal cover is arranged on the upper surface of the second layered structure for covering an opening of the cavity of the second layered structure.

Abstract: Disclosed herein is a temperature compensated crystal oscillator. The temperature compensated crystal oscillator has first and second layered structures, an IC chip, a crystal vibrating chip, a resin mold portion and a metal cover. The first layered structure is comprised of at least one layer and provided with a cavity formed therein. The second layered structure is arranged on the upper surface of the first layered structure, comprised of at least one layer, and provided with a cavity formed in a region not overlapped with the cavity of the first layered structure. The IC chip is inserted into the cavity of the first layered structure. The crystal vibrating chip is inserted into the cavity of the second layered structure. The resin mold portion is formed by charging resin into the cavity of the first layered structure accommodating the IC chip to form its bottom surface level with the lower surface of the first layered structure.