Abstract: A novel additive for recycling thermoset materials, its related recyclable thermoset composition and its application are disclosed. Specifically, the composition of the additive comprises at least one copolymer that has at least one carbamate group, at least one carbonate group and/or at least one urea group, and a number-average molecular weight of the copolymer is between 100 and 50,000 Da.

Abstract: A sensor package includes a substrate, a light sensor disposed on the substrate, at least one optical filter disposed on the light sensor, and an optical functional layer that is light-permeable, is disposed on the substrate, covers the light sensor and the optical filter, and includes multiple light-scattering particles. The light sensor has a light receiving region, and receives light through the light receiving region. The optical filter covers the light receiving region. When the light passes through the optical filter within an incident angle range and is received by the light receiving region, the light sensor responds to a wavelength range of the light, and a response spectrum is obtained. Within the incident angle range, an absolute value of an offset measured at a crest of a waveform of the response spectrum is less than or equal to 10 nm. An electronic device is also provided.

Abstract: The invention refers to a diffusion plate and a backlight module having the diffusion plate. The diffusion plate comprises a plate-body and a plurality of pyramid-like structures arranged on a surface of the plate-body. Each pyramid-like structure has a bottom surface, a first convex portion and a second convex portion. The first convex portion and the second convex portion have different vertex angles, and therefore the pyramid-like structure can also be called as “pyramid-like structure with multiple vertex angles”. The pyramid-like structures with multiple vertex angles can increase the light splitting points, which can improve the light splitting effect of the diffusion plate. The light source of a single light-emitting diode can be divided into eight point-light sources (light splitting points) or more, which is double the number of light splitting points compared with the traditional pyramid structure with single vertex, and thus can greatly improve the light diffusion effect.

Abstract: A voltage tracking circuit is provided. The voltage tracking circuit includes first and second P-type transistors and a control circuit. The drain of the first P-type transistor is coupled to a first voltage terminal. The gate and the drain of the second P-type transistor are respectively coupled to the first voltage terminal and a second voltage terminal. The control circuit is coupled to the first and second voltage terminals and generates a control voltage according to the first voltage and the second voltage. The sources of the first and second P-type transistors are coupled to an output terminal of the voltage tracking circuit, and the output voltage is generated at the output terminal. In response to the second voltage being higher than the first voltage, the control circuit generates the control signal to turn off the first P-type transistor.

Abstract: The present disclosure describes a semiconductor device having a crystalline high-k dielectric layer. The semiconductor structure includes a fin structure on a substrate, a gate dielectric layer on the fin structure, and a gate structure on the gate dielectric layer. A top portion of the gate dielectric layer is crystalline and includes a crystalline high-k dielectric material.

Abstract: An electronic device includes a first component and a second component. The first component includes a first housing and a protrusion element. The first housing has a first cover plate, and the protrusion element is disposed on the first cover plate. The second component is rotationally assembled with the first component along a first direction. The second component includes a second housing, an elastic structure, and a switching element. The elastic structure has an elastic post. The second housing has a second cover plate having a through hole. One part of the elastic post passes through the through hole and is exposed on the second cover plate. The protrusion element moves along a first direction relative to the elastic structure, such that the elastic post is squeezed by the protrusion element to move along a second direction and presses the switching element.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly and a first driving assembly. The movable assembly is movable relative to the fixed assembly. The first driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The optical element driving mechanism further includes a first opening, and an external light beam travels along a first axis to pass through the first opening.

Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first micro-light-emitting diodes on a first temporary substrate; and replacing at least one defective micro-light-emitting diode of the first micro-light-emitting diodes with at least one second micro-light-emitting diode. The first micro-light-emitting diodes and at least one second micro-light-emitting diode are distributed on the first temporary substrate. The first micro-light-emitting diodes and at least one second micro-light-emitting diode have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first micro-light-emitting diodes and at least one second micro-light-emitting diode. A semiconductor structure and a display panel are also provided.

Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.

Abstract: An electrolyte of a redox flow battery, including a negative electrolyte and a positive electrolyte, is provided. The negative electrolyte includes a negative active material and a negative solvent, and the positive electrolyte includes a positive active material and a positive solvent. An initial volume of the negative electrolyte is greater than an initial volume of the positive electrolyte. A redox flow battery including the electrolyte is also provided.

Abstract: An integrated circuit includes a device, a first interconnect structure disposed above the device and a second interconnect structure positioned below the device. The first interconnect structure includes multiple frontside metal layers. The second interconnect structure includes multiple backside metal layers, where each backside metal layer includes metal conductors routed according to diagonal routing. In some embodiments, a backside interconnect structure can include another backside metal layer that includes metal conductors routed according to mixed-Manhattan-diagonal routing. A variety of techniques can be used to route signals between metal conductors in the backside interconnect structure and cells on one or more frontside metal layers.

Abstract: A method of making a semiconductor device includes forming at least one fiducial mark on a photomask. The method further includes defining a pattern including a plurality of sub-patterns on the photomask in a pattern region. The defining the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns.

Abstract: A touch substrate, a display panel, and an electronic device are provided. The touch substrate includes a base substrate, and first touch electrodes and second touch electrodes on the base substrate; the first touch electrodes are arranged in a first direction, with each first touch electrode extending in a second direction; the second touch electrodes are arranged in the second direction, with each second touch electrode extending in the first direction, the first touch electrode and the second touch electrode are spaced apart and insulated from each other; in a direction perpendicular to the base substrate, the first touch electrodes overlap with the second touch electrodes to form overlapping regions; and in the overlapping region, any first edge extending in the first direction in the conductive grid of the firm touch electrode does not overlap with the first edge in the conductive grid of the second touch electrode.

Abstract: A method of correcting a misalignment of a wafer on a wafer holder and an apparatus for performing the same are disclosed. In an embodiment, a semiconductor alignment apparatus includes a wafer stage; a wafer holder over the wafer stage; a first position detector configured to detect an alignment of a wafer over the wafer holder in a first direction; a second position detector configured to detect an alignment of the wafer over the wafer holder in a second direction; and a rotational detector configured to detect a rotational alignment of the wafer over the wafer holder.

Abstract: An end cover assembly, an air cylinder, a tread sweeper and a railway vehicle.

Abstract: A photodetector includes a first semiconductor layer, an absorption structure, a second semiconductor layer, and a barrier structure. The absorption structure is located on the first semiconductor layer, and having a first conduction band, a first valence band, and a first band gap. The second semiconductor layer is located on the absorption structure, and having a second conduction band, a second valence band, and a second band gap. The barrier structure is located between the absorption structure and the second semiconductor layer, and having a third conduction band, a third valence band, and a third band gap. The third conduction band is greater than the second conduction band or the third valence band is less than the second valence band.

Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.

Abstract: Embodiments of the invention overcome the shortcomings of prior technologies by infusing nanocellulose in a fibrillated form to enhance the properties of cellulose pulp. These properties may include, for example, the mechanical and barrier properties, i.e., tensile strength, liquid, and gas impermeability such as oxygen, carbon dioxide, and oil, can be improved substantially. Another embodiment of the invention further provide a fibrillated cellulose composite material that include a blend of fibrillated cellulose and polymers to create improved properties over cellulose-based materials. The composite material further may be generally free of chemical additives to enhance the above properties.

Abstract: A transistor includes: a substrate; a first fin and a second fin protruding upwardly from a top surface of the substrate, wherein the first fin and the second fin are concentric, and each of the first fin and the second fin comprises a first straight section, a second straight section in parallel with the first straight section, a first curved section, and a second curved section; a first drain and a second drain; a first source and a second source; a first curved channel and a second curved channel located at the first curved section of the first fin and the first curved section of the second fin, respectively; and a third curved channel and a fourth curved channel located at the second curved section of the first fin and the second curved section of the second fin, respectively.