Patents by Inventor Chang-Chia HUANG

Chang-Chia HUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrical connection structure
    Patent number: 8476759
    Abstract: A structure comprises a top metal connector formed underneath a bond pad. The bond pad is enclosed by a first passivation layer and a second passivation layer. A polymer layer is further formed on the second passivation layer. The dimension of an opening in the first passivation layer is less than the dimension of the top metal connector. The dimension of the top metal connector is less than the dimensions of an opening in the second passivation layer and an opening in the polymer layer.
    Type: Grant
    Filed: November 30, 2011
    Date of Patent: July 2, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yao-Chun Chuang, Chang-Chia Huang, Tsung-Shu Lin, Chen-Cheng Kuo, Chen-Shien Chen
  • Electrical Connection Structure
    Publication number: 20130134563
    Abstract: A structure comprises a top metal connector formed underneath a bond pad. The bond pad is enclosed by a first passivation layer and a second passivation layer. A polymer layer is further formed on the second passivation layer. The dimension of an opening in the first passivation layer is less than the dimension of the top metal connector. The dimension of the top metal connector is less than the dimensions of an opening in the second passivation layer and an opening in the polymer layer.
    Type: Application
    Filed: November 30, 2011
    Publication date: May 30, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yao-Chun Chuang, Chang-Chia Huang, Tsung-Shu Lin, Chen-Cheng Kuo, Chen-Shien Chen
  • MECHANISMS FOR FORMING FINE-PITCH COPPER BUMP STRUCTURES
    Publication number: 20130127045
    Abstract: The mechanisms of forming a copper post structures described enable formation of copper post structures on a flat conductive surface. In addition, the copper post structures are supported by a molding layer with a Young's modulus (or a harder material) higher than polyimide. The copper post structures formed greatly reduce the risk of cracking of passivation layer and delamination of at the dielectric interface surrounding the copper post structures.
    Type: Application
    Filed: February 27, 2012
    Publication date: May 23, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tsung-Shu LIN, Han-Ping PU, Ming-Da CHENG, Chang-Chia HUANG, Hao-Juin LIU