Abstract: A memory cell test circuit for use in a semiconductor memory device having a plurality of banks connected to a plurality of global input/output lines, including: a plurality of bank switching units for transferring data outputted from the plurality of banks to the plurality of global input/output lines based on a test mode signal and a plurality of control clock signals; a logic operation unit for performing a logic operation to the data outputted to the plurality of global input/output lines and for outputting a result of the logic operation to a test global input/output line; and a switching unit coupled to the test global input/output line and the plurality of global input/output lines for selectively passing data of the test global input/output line and data of the global input/output lines based on the test mode signal and the plurality of control clock signals.

Abstract: A redundant circuit includes a plurality of bit line sense amp arrays including different local data buses, sharing one bit line sense amp, and being formed adjacently to each other, an input/output fuse unit for outputting a selection signal with different logic state depending on whether or not a first fuse is cut upon activation of a row active operation control signal, a fuse set for providing a redundant signal with different logic state based on whether or not a second fuse is cut and repair addresses upon activation of the row active operation control signal, and a redundant controller for logically operating the selection signal, the redundant signal and a strobe signal to thereby generate a bus control signal to selectively connect the bit line sense amp to the different local data buses.

Abstract: A semiconductor memory device includes: a first bit line sense amplifier array for amplifying a data input to a first bit line pair coupled to cells; a second bit line sense amplifier array for amplifying a data input to a second bit line pair coupled to the cells; and a control unit for activating one of the first and second bit line sense amplifier arrays and, after a predetermined time, for activating the other bit line sense amplifier array in response to an active signal and a column address information signal.

Abstract: A semiconductor memory device stably performs a write operation with reduced current consumption. The semiconductor memory device includes a global data, a control unit, a termination resistor unit, and a storage unit. The global data line transmits data. The control unit generates a global control signal during a read operation or a write operation. The termination resistance unit supplies termination resistance to the global data line in response to the global control signal. The storage unit stores the data transmitted to the global data line while the termination resistance unit is inactivated. A method for driving the semiconductor memory device includes detecting a read operation or a write operation and supplying termination resistance when the read or write operation is detected.

Abstract: Discussed is an input circuit for a memory device which can improve the data processing speed by controlling the operation of an input multiplexer for determining a transfer path of data having passed through a data input buffer. The input circuit separately controls the operations of the input multiplexer and data bus writers to improve the operating speed. The input multiplexer receives data outputted from data buffers and determines the transfer path of the data.

Abstract: A semiconductor memory device for reducing data line length includes a plurality of data input strobe signal generation units each of which for generating a plurality of data input strobe signals based on a plurality of data input control code signals; and a plurality of data coders one-to-one corresponded to the plurality of data input strobe signal generation units for outputting data to a plurality of global input/output lines according to the plurality of data input strobe signals.

Abstract: The present invention provides a semiconductor memory device for reducing a power consumption and securing an enough valid data window. A semiconductor memory device includes an align control signal generation unit for generating a plurality of align control signals sequentially activated by dividing a data strobe signal only when a data input/output is performed; and a data align unit for outputting a plurality of data which are sequentially inputted as a plurality of align data at the same time in response to the plurality of align control signals.

Abstract: Disclosed is an input data distribution device for a memory device, the input data distribution device comprising: a decoding section for receiving a starting column address applied when a write command is activated; and N number of switching sections each of which receives N bits of data applied sequentially through one data pin after the write command is activated, wherein each of the switching sections exclusively outputs one bit from among the N bits of data by using an output signal of the decoding section and a signal for determining a burst type.

Abstract: The present invention provides a semiconductor memory device for reducing a power consumption. A semiconductor memory device includes a command decoding unit for decoding a plurality of commands; a driving signal generation unit for generating a plurality of driving signals synchronized with Nth clocks of an internal clock from an activation timing of a CAS signal generated by the command decoding unit, wherein N is an even integer number; an address delay unit for receiving an internal address in response to the CAS signal and for delaying the internal address signal by synchronizing the internal address with the plurality of driving signals; and a data access block for performing a data access in response to the delayed internal address.

Abstract: Disclosed herein is a semiconductor memory device for reducing an unnecessary current consumption occurred in an idle state or an active state. The semiconductor memory device includes a driving clock supply unit for supplying a driving clock during a read or a write operation of each bank; a delay unit for generating a read address or a write address in synchronization with the driving clock by delaying an address by a predetermined time based on one of an additive latency, a CAS latency and a combination thereof; and an output unit for latching the read address or the write address to output the latched signal as an internal column address.

Abstract: There is provided a data output device for stably operating in a high frequency circumstance. The data output device includes a selection unit for receiving a second address information signal to directly output or inversely output the received signal as a third address information signal in response to a first address information signal; a pipe output control unit for generating a plurality of pipe output control signals; a plurality of pipe latch units for storing a global data in response to a pipe input control signal and aligning the stored data in response to the first to the third address information signals, thereby outputting the aligned data synchronized by the pipe output control signals; and a data driving unit for outputting the aligned data as an external data in response to a first and a second DLL output clock.

Abstract: A redundant circuit includes a plurality of bit line sense amp arrays including different local data buses, sharing one bit line sense amp, and being formed adjacently to each other, an input/output fuse unit for outputting a selection signal with different logic state depending on whether or not a first fuse is cut upon activation of a row active operation control signal, a fuse set for providing a redundant signal with different logic state based on whether or not a second fuse is cut and repair addresses upon activation of the row active operation control signal, and a redundant controller for logically operating the selection signal, the redundant signal and a strobe signal to thereby generate a bus control signal to selectively connect the bit line sense amp to the different local data buses.

Abstract: There is provided a data output device for stably operating in a high frequency circumstance. The data output device includes a selection unit for receiving a second address information signal to directly output or inversely output the received signal as a third address information signal in response to a first address information signal; a pipe output control unit for generating a plurality of pipe output control signals; a plurality of pipe latch units for storing a global data in response to a pipe input control signal and aligning the stored data in response to the first to the third address information signals, thereby outputting the aligned data synchronized by the pipe output control signals; and a data driving unit for outputting the aligned data as an external data in response to a first and a second DLL output clock.

Abstract: A semiconductor memory device for driving a word line is provided. The enabling timing of a word line is advanced using a block information signal that contains no redundancy information, thereby improving a RAS to CAS delay (tRCD). A sub word line driving enable signal for controlling a driving of a sub word line and a main word line driving enable signal for controlling a driving of a main word line are controlled by the block information signal that contains only mat information but does not contain the redundancy information. Accordingly, the word line control signal may be activated earlier than the sub word line driving enable signal and the main word line driving enable signal, thereby advancing the enable timing of the word line.

Abstract: An input circuit for a semiconductor memory device is disclosed. The input circuit controlling transmission paths for data having passed through a data input buffer by using a 1-clock shifted block column address is provided. In particular, a data input apparatus improving a data processing speed by advancing an operation time point of a data bus writer is provided.

Abstract: A data output circuit of a synchronous memory device including a plurality of pipelatches having an N bits prefetch function. Each pipelatch comprises a data switching section for switching an output path of N bits data; a first data selection section for receiving one half of the N bits data and outputting the one half in response to a first control signal; a second data selection section for receiving the other half of the N bits data and outputting the other half in response to the first control signal; a first shifter for outputting a second control signal delayed by a first time after receiving the first control signal; and a second shifter for receiving the data outputted from the second data selection section and outputting the data with a delay of the first time in response to the second control signal.

Abstract: Disclosed herein is a semiconductor memory device for reducing an unnecessary current consumption occurred in an idle state or an active state. The semiconductor memory device includes a driving clock supply unit for supplying a driving clock during a read or a write operation of each bank; a delay unit for generating a read address or a write address in synchronization with the driving clock by delaying an address by a predetermined time based on one of an additive latency, a CAS latency and a combination thereof; and an output unit for latching the read address or the write address to output the latched signal as an internal column address.

Abstract: The present invention provides a semiconductor memory device for reducing a power consumption. A semiconductor memory device includes a command decoding unit for decoding a plurality of commands; a driving signal generation unit for generating a plurality of driving signals synchronized with Nth clocks of an internal clock from an activation timing of a CAS signal generated by the command decoding unit, wherein N is an even integer number; an address delay unit for receiving an internal address in response to the CAS signal and for delaying the internal address signal by synchronizing the internal address with the plurality of driving signals; and a data access block for performing a data access in response to the delayed internal address.

Abstract: The present invention provides a semiconductor memory device for reducing a power consumption and securing an enough valid data window. A semiconductor memory device includes an align control signal generation unit for generating a plurality of align control signals sequentially activated by dividing a data strobe signal only when a data input/output is performed; and a data align unit for outputting a plurality of data which are sequentially inputted as a plurality of align data at the same time in response to the plurality of align control signals.

Abstract: A row redundancy circuit includes a fuse box group array, a redundant row predecoder and a redundant sub-row decoder. The fuse box group array includes a plurality of fuse box groups to detect row addresses. The redundant row predecoder performs a logic operation on an output signal from the fuse box groups to selectively activate a redundant main wordline corresponding to a plurality of redundant sub-wordlines. The redundant sub-row decoder performs a logic operation on output signals from the fuse box groups, which are classified into group signals corresponding to the number of fuse boxes in each fuse box group, to output a boosting signal for selectively activating the plurality of sub-wordlines corresponding to the each redundant main wordline. In the row redundancy circuit, the current consumption due to generation of unnecessary boosting signals can be minimized because the boosting signal is prevented from being disabled and then enabled in every precharge mode.