Abstract: A process of forming a bottle-shaped trench. A semiconductor substrate with a trench is provided, on which a pad layer and hard mask layer are sequentially formed. A dielectric layer is formed on the hard mask layer to fill the trench. Part of the dielectric layer is etched to expose the sidewall of the upper portion of the trench. A spacer is formed on the sidewall. The residual dielectric layer in the trench is removed, and the partial trench not covered by the spacer is etched to a bottle shape.

Abstract: A method for forming shallow trench isolation. A substrate is provided with a mask layer formed thereon. The mask layer is etched to expose a portion of the substrate, and the portion of the substrate is etched to form a trench. A liner layer is formed on the inside wall of the trench. A first dielectric layer and a sacrificial layer are sequentially deposited on the substrate such that the trench is substantially filled, wherein the first dielectric layer is formed by high density plasma chemical vapor deposition (HDPCVD). Portions of the first dielectric layer and the sacrificial layer are removed from the trench. A second dielectric layer is deposited on the substrate such that the trench is substantially filled, wherein the second dielectric layer is formed by high density plasma chemical vapor deposition (HDPCVD). A portion of the second dielectric layer is removed from the trench.

Abstract: A method for fabricating STI for semiconductor device. The method includes the following steps. A trench is formed on the semiconductor substrate, a liner oxide is formed on the bottom and sidewall of the trench, and then a liner nitride is formed on the liner oxide. The first oxide layer is deposited in the trench by high density plasma chemical vapor deposition. The first oxide layer is spray-etched to a predetermined depth, wherein the recipe of the spray etching solution is HF/H2SO4=0.3˜0.4. A second oxide layer is deposited to fill the trench by high density plasma chemical vapor deposition to form a shallow trench isolation structure.

Abstract: A method for forming shallow trench isolation. A substrate is provided with a mask layer formed thereon. The mask layer is etched to expose a portion of the substrate, and the portion of the substrate is etched to form a trench. A liner layer is formed on the inside wall of the trench. A first dielectric layer and a sacrificial layer are sequentially deposited on the substrate such that the trench is substantially filled, wherein the first dielectric layer is formed by high density plasma chemical vapor deposition (HDPCVD). Portions of the first dielectric layer and the sacrificial layer are removed from the trench. A second dielectric layer is deposited on the substrate such that the trench is substantially filled, wherein the second dielectric layer is formed by high density plasma chemical vapor deposition (HDPCVD). A portion of the second dielectric layer is removed from the trench.

Abstract: A manufacturing method for a shallow trench isolation region with high aspect ratio. The method comprises the steps of providing a substrate with a trench therein, forming a first insulation layer on the substrate and inside the trench by high density plasma chemical vapor deposition (HDPCVD), removing the majority of the first insulation layer outside the trench by spray type etching, and forming a second insulation layer on the first insulation layer by low pressure CVD to fill the trench. According to the present invention, a void-free shallow trench isolation with high aspect ration can be achieved.

Abstract: A process of forming a bottle-shaped trench. A semiconductor substrate with a trench is provided, on which a pad layer and hard mask layer are sequentially formed. A dielectric layer is formed on the hard mask layer to fill the trench. Part of the dielectric layer is etched to expose the sidewall of the upper portion of the trench. A spacer is formed on the sidewall. The residual dielectric layer in the trench is removed, and the partial trench not covered by the spacer is etched to a bottle shape.

Abstract: A method for forming a trench isolation structure. First, a substrate having at least one trench is provided. The trench is filled with a spin on glass (SOG) layer. Subsequently, a baking is performed on the SOG layer. The SOG layer is etched back to a predetermined depth. Next, a curing is performed on the remaining SOG layer. Finally, an insulating layer is formed on the remaining SOG layer to fill the trench completely.

Abstract: A method for increasing area of a trench capacitor. First, a first oxide layer and a first nitride layer are sequentially formed on a substrate. An opening is formed through the first oxide layer and the first nitride layer into the substrate. A part of the first oxide layer exposed in the opening is removed to form a first recess, and then a second nitride layer is formed therein. A second oxide layer is formed in the lower portion of the opening. After a third nitride layer is formed in the upper portion of the opening, the second oxide layer is removed. The substrate in the opening is etched using the first nitride layer, the second nitride layer and the third nitride layer as a mask to form a second recess in the lower portion of the opening. The second nitride layer and the third nitride layer are then removed.

Abstract: A method for forming thoroughly deposited shallow trench isolation. A first oxide layer is formed conformally over the surface of a semiconductor substrate and on a trench thereon with an aspect ratio greater than 3. A liquid etching shield is filled in the trench by spin-spraying to cover the oxide layer in the trench. An etchant is then sprayed over the surface of the semiconductor substrate to remove the uncovered oxide layer and expose the surface of the semiconductor substrate. The density of the etchant is less than that of the liquid etching shield. A second oxide layer is deposited in the trench to form isolation without voids or seams.

Abstract: A manufacturing method of a high aspect ratio shallow trench isolation region. A substrate with a trench therein is provided and placed into a chamber. A first insulation layer is formed on the substrate as well as inside the trench by high density plasma chemical vapor deposition. The majority of the first insulation layer outside the trench is removed by in situ etching using carbon fluoride as an etching gas with high selectivity for SiO2/SiN etching ratio, and a second insulation layer is formed on the first insulation layer by high density plasma chemical vapor deposition, filling the trench. According to the present invention, a high aspect ratio shallow trench isolation region without voids can thus be achieved.

Abstract: A method for fabricating STI for semiconductor device. The method includes the following steps. A trench is formed on the semiconductor substrate, a liner oxide is formed on the bottom and sidewall of the trench, and then a liner nitride is formed on the liner oxide. The first oxide layer is deposited in the trench by high density plasma chemical vapor deposition. The first oxide layer is spray-etched to a predetermined depth, wherein the recipe of the spray etching solution is HF/H2SO4=0.3˜0.4. A second oxide layer is deposited to fill the trench by high density plasma chemical vapor deposition to form a shallow trench isolation structure.

Abstract: A method for increasing area of a trench capacitor. First, a first oxide layer and a first nitride layer are sequentially formed on a substrate. An opening is formed through the first oxide layer and the first nitride layer into the substrate. A part of the first oxide layer exposed in the opening is removed to form a first recess, and then a second nitride layer is formed therein. A second oxide layer is formed in the lower portion of the opening. After a third nitride layer is formed in the upper portion of the opening, the second oxide layer is removed. The substrate in the opening is etched using the first nitride layer, the second nitride layer and the third nitride layer as a mask to form a second recess in the lower portion of the opening. The second nitride layer and the third nitride layer are then removed.

Abstract: A method of forming a high aspect ratio shallow trench isolation in a semiconductor substrate. The method includes the steps of forming a hard mask layer with a certain pattern on the semiconductor substrate, etching a portion of the semiconductor substrate not covered by the hard mask layer to form a high aspect ratio shallow trench in the semiconductor substrate; forming an oxide liner on the bottom and sidewall of the high aspect ratio shallow trench; performing a LPCVD to form a first oxide layer to fill the high aspect ratio shallow trench, a void being formed in the first oxide layer; etching a portion of the first oxide layer to a certain depth of the high aspect ratio shallow trench and to expose the void; and performing a HDPCVD to form a second oxide layer to fill the high aspect ratio shallow trench.

Abstract: A method for manufacturing a shallow trench isolation. A pad oxide layer and a nitride layer are sequentially deposited on a substrate. The nitride layer and the pad oxide layer are patterned to expose the substrate. Thereafter, the exposed substrate is etched to form a plurality of trenches. A lining oxide layer is formed on the surface of the trenches. Subsequently, a first oxide layer is formed by high-density plasma chemical vapor deposition (HDPCVD) into the trenches and over the surface of the nitride layer. Next, the first oxide layer at the top of the trenches is removed by spin etching. Then, a second oxide layer is formed by the high-density plasma chemical vapor deposition (HDPCVD) to fill out the plurality of trenches and cover the surface of the nitride layer. The excess portion of the second oxide layer over the nitride layer, the nitride layer and the pad oxide layer are removed sequentially.

Abstract: A method of forming interconnects. An oxide masking layer with patterns is formed overlaying the metal layer. The patterns of the masking layer are transferred into the metal layer so as to form an opening. Then, a silicon nitride liner is conformally formed on the masking layer, the metal layer and the first insulating layer. Next, the silicon nitride liner and the masking layer are partially removed by reactive ion etching to leave a facet mask to reduce the aspect ratio of the opening followed by removal of the remaining silicon nitride liner. Then, an insulating layer is deposited to fill the opening.

Abstract: A method of forming interconnects. An oxide masking layer with patterns is formed overlaying the metal layer. The patterns of the masking layer are transferred into the metal layer so as to form an opening. Then, a silicon nitride liner is conformally formed on the masking layer, the metal layer and the first insulating layer. Next, the silicon nitride liner and the masking layer are partially removed by reactive ion etching to leave a facet mask to reduce the aspect ratio of the opening followed by removal of the remaining silicon nitride liner. Then, an insulating layer is deposited to fill the opening.