Abstract: A semiconductor device includes a semiconductor substrate and a via electrode. The via electrode has a first portion on the substrate and extends towards the substrate and has a plurality of spikes that extends from the first portion into the substrate, each of the spikes being spaced apart form one another.

Abstract: The probe card is comprised of a probe card wafer, a plurality of through via electrodes penetrating the probe card wafer; and a plurality of redistributed wiring probe needle structures, each being connected to the through via electrodes protruding from a surface of the probe card wafer.

Abstract: Disclosed is a high-definition imaging lens assembly that can reduce the length of an optical path. The high-definition imaging lens assembly includes: first, second, third, and fourth lenses that are sequentially disposed from an object along an optical axis, wherein the first lens has positive refractive power and the second lens has negative refractive power, the first and second lenses are made of optical glass, a front surface of the first lens and a rear surface of the second lens are spherical, and a rear surface of the first lens and a front surface of the second lens that are substantially planar are bonded to each other. The third and fourth lenses are made of plastic and are spaced each other and at least one surface of each of the third and fourth lenses is aspherical.

Abstract: Disclosed is a high-definition imaging lens assembly that can reduce the length of an optical path. The high-definition imaging lens assembly includes: first, second, third, and fourth lenses that are sequentially disposed from an object along an optical axis, wherein the first lens has positive refractive power and the second lens has negative refractive power, the first and second lenses are made of optical glass, a front surface of the first lens and a rear surface of the second lens are spherical, and a rear surface of the first lens and a front surface of the second lens that are substantially planar are bonded to each other. The third and fourth lenses are made of plastic and are spaced each other and at least one surface of each of the third and fourth lenses is aspherical.

Abstract: This invention relates to a pillar ramp structure which prevents interfering with the deployment of a curtain airbag. In one embodiment, the present invention includes a pillar ramp housing which is fixed to an inner panel, and a folding bracket in which the first end of the folding bracket is installed to a front surface of the pillar ramp housing and the second end of the folding bracket extends toward a pillar trim.

Abstract: The kinetic energy of the driver's knees is properly absorbed by a plurality of simply configured shock absorbing mechanisms, contributing to a minimization of injury to the driver's knees. A knee bolster of a vehicle comprises an upper member whose front end is secured to a cowl cross member. A lower member is in a bent plate shape configuration that is consecutively formed with a front portion, a center portion, a rear portion and a knee supporting portion. Shear pins fix a portion between the upper member and the rear portion of the lower member. A damping hole is formed on the upper member and tapers off toward the front of the vehicle. A damping protrusion is inserted into the damping hole at the rear side of the vehicle and protrudes out from the rear portion of the lower member.

Abstract: The kinetic energy of the driver's knees is properly absorbed by a plurality of simply configured shock absorbing mechanisms, contributing to a minimization of injury to the driver's knees. A knee bolster of a vehicle comprises an upper member whose front end is secured to a cowl cross member. A lower member is in a bent plate shape configuration that is consecutively formed with a front portion, a center portion, a rear portion and a knee supporting portion. Shear pins fix a portion between the upper member and the rear portion of the lower member. A damping hole is formed on the upper member and tapers off toward the front of the vehicle. A damping protrusion is inserted into the damping hole at the rear side of the vehicle and protrudes out from the rear portion of the lower member.

Abstract: A side sill, door scuff trim, and wiring harness are efficiently interconnected by an integral clip. This includes a main body for receiving the wiring harness, a lower body firmly attachable to the side sill, and a cover for covering the wire receiving hole.

Abstract: There is provided a dry type heating pipe line structure for allowing easy construction of heating pipelines and an improved heating structure by installing the structures by a dry type method. The structure may include a plurality of support frames installed on the upper surface of the bottom for controlling the installation location of the heating pipelines, fixing the heating pipelines, and forming the height of the hot-floored layer, a plurality of heat diffusion plates installed on the upper surface of each of the support frames for uniformly diffusing the heat from the hot water to the entire surface of the bottom, and a upper plate installed on the support frame having the heat diffusion plate for transmitting the heat of the hot water.

Abstract: A power semiconductor device and a method for fabricating the same are provided. The power semiconductor device includes a source structure having a projected portion with a tip-shaped end portion on its center and formed so as to surround a predetermined region of right and left and upper portions of the projected portion. Two drain structures are formed in a predetermined region surrounded by the source structure. Extended drain structures are formed around the drain structures and the extended drain structures function as a channel with a field effect channel between sides of the projected portion of the source structure. Accordingly, since there are no drain structures on the tip of the projected portion of the source structure, although a radius of curvature of the tip of the projected portion is small, a decrease in a breakdown voltage of a device due to the small radius of curvature of the tip of the projected portion can be suppressed.

Abstract: A power semiconductor device and a method for fabricating the same are provided. The power semiconductor device includes a source structure having a projected portion with a tip-shaped end portion on its center and formed so as to surround a predetermined region of right and left and upper portions of the projected portion. Two drain structures are formed in a predetermined region surrounded by the source structure. Extended drain structures are formed around the drain structures and the extended drain structures function as a channel with a field effect channel between sides of the projected portion of the source structure. Accordingly, since there are no drain structures on the tip of the projected portion of the source structure, although a radius of curvature of the tip of the projected portion is small, a decrease in a breakdown voltage of a device due to the small radius of curvature of the tip of the projected portion can be suppressed.