Abstract: Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face and nitride face devices formed as enhancement mode devices.

Abstract: Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face and nitride face devices formed as enhancement mode devices.

Abstract: A novel enhancement mode field effect transistor (FET), such as a High Electron Mobility Transistors (HEMT), has an N-polar surface uses polarization fields to reduce the electron population under the gate in the N-polar orientation, has improved dispersion suppression, and low gate leakage.

Abstract: III-nitride devices are described with recessed gates. In some embodiments, the material around the gates is formed by epitaxially depositing different III-nitride layers on a substrate and etching through at least the top two layers in the gate region. Because adjacent layers in the top three layers of the structure have different compositions, some of the layers act as etch stops to allow for precision etching. In some embodiments, a regrowth mask is used to prevent growth of material in the gate region. A gate electrode is deposited in the recess.

Abstract: Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face and nitride face devices formed as enhancement mode devices.

Abstract: Enhancement-mode III-nitride transistors are described that have a large source to drain barrier in the off state, low off state leakage, and low channel resistance in the access regions are described. The devices can include a charge depleting layer under the gate and/or a charge enhancing layer outside of the gate region, that is, in the access region.

Abstract: A novel enhancement mode field effect transistor (FET), such as a High Electron Mobility Transistors (HEMT), has an N-polar surface uses polarization fields to reduce the electron population under the gate in the N-polar orientation, has improved dispersion suppression, and low gate leakage.

Abstract: III-nitride devices are described with recessed gates. In some embodiments, the material around the gates is formed by epitaxially depositing different III-nitride layers on a substrate and etching through at least the top two layers in the gate region. Because adjacent layers in the top three layers of the structure have different compositions, some of the layers act as etch stops to allow for precision etching. In some embodiments, a regrowth mask is used to prevent growth of material in the gate region. A gate electrode is deposited in the recess.

Abstract: III-nitride devices are described with recessed gates. In some embodiments, the material around the gates is formed by epitaxially depositing different III-nitride layers on a substrate and etching through at least the top two layers in the gate region. Because adjacent layers in the top three layers of the structure have different compositions, some of the layers act as etch stops to allow for precision etching. In some embodiments, a regrowth mask is used to prevent growth of material in the gate region. A gate electrode is deposited in the recess.

Abstract: An enhancement mode High Electron Mobility Transistor (HEMT) comprising a p-type nitride layer between the gate and a channel of the HEMT, for reducing an electron population under the gate. The HEMT may also comprise an Aluminum Nitride (AlN) layer between an AlGaN layer and buffer layer of the HEMT to reduce an on resistance of a channel.

Abstract: A method of manufacturing a product may include a step of forming an end of a film in a hook shape corresponding to one side cavity of an upper mold, a step of removing an unnecessary portion of the film, a step of inserting the film into the one side cavity in a state that a side having the hook shape in the film is disposed at an inner surface of the upper mold, a step of injecting injection liquid into the one side cavity in a state that the one side cavity is partitioned from the other side cavity of the upper mold, a step of injecting injection liquid into the other side cavity, a step of filling a partitioning portion formed between the one side cavity and the other side cavity to form an injection-molded body, and a step of extracting the injection-molded body.

Abstract: An apparatus for preventing a lid from being undesirably opened. The lid is rotatably coupled to a vehicle tray. The apparatus includes a spring provided under the vehicle tray; and a stopper provided under the vehicle tray. The stopper is coupled at one end to the spring, so that, when a force greater than a predetermined force is applied to the stopper in a direction away from the spring, the stopper overcomes the elastic force of the spring and slides to a position at which it prevents the lid from opening. One-way sliding sawteeth are provided on a lower surface of the vehicle tray and on an upper surface of the stopper. The sawteeth engage with each other when the stopper slides to the position at which it prevents the lid from opening, such that the stopper is prevented from returning to its original position.

Abstract: Enhancement-mode III-nitride transistors are described that have a large source to drain barrier in the off state, low off state leakage, and low channel resistance in the access regions are described. The devices can include a charge depleting layer under the gate and/or a charge enhancing layer outside of the gate region, that is, in the access region.

Abstract: A method for fabricating III-N semiconductor devices on the N-face of layers comprising (a) growing a III-nitride semiconductor device structure in a Ga-polar direction on a substrate, (b) attaching a Ga face of the III-nitride semiconductor device structure to a host substrate, and (c) removing the substrate to expose the N-face surface of the III-nitride semiconductor device structure. An N-polar (000-1) oriented III-nitride semiconductor device is also disclosed, comprising one or more (000-1) oriented nitride layers, each having an N-face opposite a group III-face, wherein at least one N-face is an at least partially exposed N-face, and a host substrate attached to one of the group III-faces.

Abstract: III-nitride devices are described with recessed gates. In some embodiments, the material around the gates is formed by epitaxially depositing different III-nitride layers on a substrate and etching through at least the top two layers in the gate region. Because adjacent layers in the top three layers of the structure have different compositions, some of the layers act as etch stops to allow for precision etching. In some embodiments, a regrowth mask is used to prevent growth of material in the gate region. A gate electrode is deposited in the recess.

Abstract: Enhancement mode III-nitride devices are described. The 2DEG is depleted in the gate region so that the device is unable to conduct current when no bias is applied at the gate. Both gallium face and nitride face devices formed as enhancement mode devices.

Abstract: A diode device can include an enhancement mode gallium nitride transistor having a gate, a drain and a source, wherein the gate is connected to the drain to enable the device to perform as a diode. In some embodiments, an integrated switching-diode is described that includes a substrate, a gallium nitride switching transistor on the substrate and a free wheeling diode on the substrate and coupled to the switching transistor.

Abstract: An apparatus for preventing a lid from being undesirably opened. The lid is rotatably coupled to a vehicle tray. The apparatus includes a spring provided under the vehicle tray; and a stopper provided under the vehicle tray. The stopper is coupled at one end to the spring, so that, when a force greater than a predetermined force is applied to the stopper in a direction away from the spring, the stopper overcomes the elastic force of the spring and slides to a position at which it prevents the lid from opening. One-way sliding sawteeth are provided on a lower surface of the vehicle tray and on an upper surface of the stopper. The sawteeth engage with each other when the stopper slides to the position at which it prevents the lid from opening, such that the stopper is prevented from returning to its original position.

Abstract: High breakdown enhancement mode gallium nitride (GaN) based high electron mobility transistors (HEMTs) with integrated slant field plates. These HEMTs have an epilayer structure comprised of AlGaN/GaN buffer. Before the formation of the gate electrode, a passivation layer is deposited, and then the opening for the gate is patterned. The passivation layer below the gate is etched using an etch condition that creates a slanted sidewalls. Then, the charge below the channel is removed either by Fluorine-based plasma treatment and/or by a recess etch. The gate metal is deposited with an angled rotation to form a gate structure with an inherent field plate with rounded edges.

Abstract: An enhancement mode High Electron Mobility Transistor (HEMT) comprising a p-type nitride layer between the gate and a channel of the HEMT, for reducing an electron population under the gate. The HEMT may also comprise an Aluminum Nitride (AlN) layer between an AlGaN layer and buffer layer of the HEMT to reduce an on resistance of a channel.