Abstract: Provided is a heater for a cigarette-type electronic cigarette device. A heater for a cigarette-type electronic cigarette device according to an exemplary embodiment of the present invention is configured to a circumference of a cigarette inserted thereinto by a predetermined length and includes a heating member that is disposed to surround a circumference of the cigarette when the cigarette is inserted and is heated through an eddy current induced by electromagnetic induction to heat the cigarette, a heat insulation member that is disposed to surround a circumference of the heating member and blocks the heat generated by the heating member from moving to the outside, and a coil member that is wound multiple times around a circumference of the heat insulation member and that generates a magnetic field that causes electromagnetic induction to the heating member when power is applied.

Abstract: Provided is a heat generating heater for a cigarette-type electronic cigarette device. A heat generating heater for a cigarette-type electronic cigarette device is configured by at least a portion of the length being inserted into a cigarette and comprises: a main body which is made of a ceramic material and has an end portion pointed for penetration into the cigarette; a heat generating unit which is disposed to surround the circumferential surface of the main body to generate heat for heating the inside of the cigarette; an arrangement hole which is formed in the main body along the longitudinal direction thereof; and a temperature sensing unit which is disposed in the arrangement hole for measuring a heating temperature of the heat generating unit.

Abstract: Provided is a heater for a cigarette-type electronic cigarette device. A heater for a cigarette-type electronic cigarette device according to an exemplary embodiments of the present invention comprises: a support body made of a ceramic material and formed to have a hollow so as to surround a cigarette; an electrode pattern formed on one surface of the support body so as to heat the cigarette inserted into the support body when power is applied; and a cover layer which has an insulation property and covers the electrode pattern.

Abstract: Provided is a heater for a cigarette-type electronic cigarette device. A heater for a cigarette-type electronic cigarette device according to an exemplary embodiment of the present invention is configured to a circumference of a cigarette inserted thereinto by a predetermined length and includes a heating member that is disposed to surround a circumference of the cigarette when the cigarette is inserted and is heated through an eddy current induced by electromagnetic induction to heat the cigarette, a heat insulation member that is disposed to surround a circumference of the heating member and blocks the heat generated by the heating member from moving to the outside, and a coil member that is wound multiple times around a circumference of the heat insulation member and that generates a magnetic field that causes electromagnetic induction to the heating member when power is applied.

Abstract: Provided is a heat generating heater for a cigarette-type electronic cigarette device. A heat generating heater for a cigarette-type electronic cigarette device is configured by at least a portion of the length being inserted into a cigarette and comprises: a main body which is made of a ceramic material and has an end portion pointed for penetration into the cigarette; a heat generating unit which is disposed to surround the circumferential surface of the main body to generate heat for heating the inside of the cigarette; an arrangement hole which is formed in the main body along the longitudinal direction thereof; and a temperature sensing unit which is disposed in the arrangement hole for measuring a heating temperature of the heat generating unit.

Abstract: Provided is a heater for a cigarette-type electronic cigarette device. A heater for a cigarette-type electronic cigarette device according to an exemplary embodiments of the present invention comprises: a support body made of a ceramic material and formed to have a hollow so as to surround a cigarette; an electrode pattern formed on one surface of the support body so as to heat the cigarette inserted into the support body when power is applied; and a cover layer which has an insulation property and covers the electrode pattern.

Abstract: An integrated circuit device includes a first transistor having a first channel between a first source/drain, and a second transistor having a second channel between a second source/drain. The first transistor operates based on a first amount of current and the second transistor operates based on a second amount of current different from the first amount of current. The first and second channels have fixed channel widths. The fixed channel widths may be based on fins or nanowires included in the first and second transistors.

Abstract: An integrated circuit can include first and second FETs of a particular conductivity type on a substrate, wherein a first source/drain region of the first FET is closer to a center of a first channel region of the first FET than a second source/drain region of the second FET is to a center of a second channel region of the second FET.

Abstract: Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.

Abstract: An integrated circuit device includes a first transistor having a first channel between a first source/drain, and a second transistor having a second channel between a second source/drain. The first transistor operates based on a first amount of current and the second transistor operates based on a second amount of current different from the first amount of current. The first and second channels have fixed channel widths. The fixed channel widths may be based on fins or nanowires included in the first and second transistors.

Abstract: Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.

Abstract: An integrated circuit device includes a first transistor having a first channel between a first source/drain, and a second transistor having a second channel between a second source/drain. The first transistor operates based on a first amount of current and the second transistor operates based on a second amount of current different from the first amount of current. The first and second channels have fixed channel widths. The fixed channel widths may be based on fins or nanowires included in the first and second transistors.

Abstract: Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.

Abstract: Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.

Abstract: Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.

Abstract: An integrated circuit device includes a first transistor having a first channel between a first source/drain, and a second transistor having a second channel between a second source/drain. The first transistor operates based on a first amount of current and the second transistor operates based on a second amount of current different from the first amount of current. The first and second channels have fixed channel widths. The fixed channel widths may be based on fins or nanowires included in the first and second transistors.

Abstract: Semiconductor devices include a semiconductor substrate with a stack structure protruding from the semiconductor substrate and surrounded by an isolation structure. The stack structure includes an active layer pattern and a gap-filling insulation layer between the semiconductor substrate and the active layer pattern. A gate electrode extends from the isolation structure around the stack structure. The gate electrode is configured to provide a support structure for the active layer pattern. The gate electrode may be a gate electrode of a silicon on insulator (SOI) device formed on the semiconductor wafer and the semiconductor device may further include a bulk silicon device formed on the semiconductor substrate in a region of the semiconductor substrate not including the gap-filing insulation layer.

Abstract: A method of fabricating a fin field effect transistor may include forming a fin portion protruding from a substrate, forming a device isolation layer to cover a lower sidewall of the fin portion, forming a semiconductor layer using an epitaxial method to cover an upper sidewall and a top surface of the fin portion, selectively etching an upper portion of the device isolation layer to form a gap region between a top surface of the device isolation layer and a bottom surface of the semiconductor layer, and forming a gate electrode pattern on the semiconductor layer to fill the gap region. Related devices are also described.

Abstract: Provided is a semiconductor device. The semiconductor device includes a semiconductor substrate, a first isolation dielectric pattern on the semiconductor substrate, and an active pattern on the first isolation dielectric pattern. A semiconductor pattern is interposed between the semiconductor substrate and the first isolation dielectric pattern, and a second isolation dielectric pattern is interposed between the semiconductor substrate and the semiconductor pattern. The semiconductor substrate and the semiconductor pattern are electrically connected by a connection pattern.

Abstract: An integrated circuit device includes a first transistor having a first channel between a first source/drain, and a second transistor having a second channel between a second source/drain. The first transistor operates based on a first amount of current and the second transistor operates based on a second amount of current different from the first amount of current. The first and second channels have fixed channel widths. The fixed channel widths may be based on fins or nanowires included in the first and second transistors.