Patents by Inventor Changming Jin

Changming Jin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuit dielectric and method
    Patent number: 6351039
    Abstract: A surface treatment for porous silica to enhance adhesion of overlying layers. Treatments include surface group substitution, pore collapse, and gap filling layer (520) which invades open surface pores (514) of xerogel (510).
    Type: Grant
    Filed: May 28, 1998
    Date of Patent: February 26, 2002
    Assignee: Texas Instruments Incorporated
    Inventors: Changming Jin, Kelly J. Taylor, Wei William Lee
  • Integrated circuit dielectric and method
    Publication number: 20020017641
    Abstract: A surface treatment for porous silica to enhance adhesion of overlying layers. Treatments include surface group substitution, pore collapse, and gap filling layer (520) which invades open surface pores (514) of xerogel (510).
    Type: Application
    Filed: July 5, 2001
    Publication date: February 14, 2002
    Inventors: Jiong-Ping Lu, Changming Jin
  • Method of forming integrated circuit dielectric by evaporating solvent to yield phase separation
    Patent number: 6284675
    Abstract: A phase separation during solvent evaporation of a solution containing polymer precursors leaves low pressure solvent without polymer precursor in minimal gaps. After polymerization, drive off the low pressure solvent to yield air gaps in the minimal gaps under the polymer.
    Type: Grant
    Filed: May 26, 1999
    Date of Patent: September 4, 2001
    Assignee: Texas Instruments Incorporated
    Inventors: Changming Jin, Joseph D. Luttmer
  • Integrated circuit dielectric and method
    Patent number: 6265303
    Abstract: A surface treatment for porous silica to enhance adhesion of overlying layers. Treatments include surface group substitution, pore collapse, and gap filling layer (520) which invades open surface pores (514) of xerogel (510).
    Type: Grant
    Filed: November 9, 1999
    Date of Patent: July 24, 2001
    Assignee: Texas Instruments Incorporated
    Inventors: Jiong-Ping Lu, Changming Jin
  • Integrated circuit dielectrics
    Patent number: 6059553
    Abstract: An integrated circuit with an intermetal level dielectric (IMD) including an organic-silica hybrid (110) and located between metal lines (104).
    Type: Grant
    Filed: December 17, 1997
    Date of Patent: May 9, 2000
    Assignee: Texas Instruments Incorporated
    Inventors: Changming Jin, Stacey Yamanaka, R. Scott List
  • Integrated circuit dielectric and method
    Patent number: 6008540
    Abstract: A surface treatment for porous silica to enhance adhesion of overlying layers. Treatments include surface group substitution, pore collapse, and gap filling layer (520) which invades open surface pores (514) of xerogel (510).
    Type: Grant
    Filed: May 28, 1998
    Date of Patent: December 28, 1999
    Assignee: Texas Instruments Incorporated
    Inventors: Jiong-Ping Lu, Changming Jin