Abstract: A semiconductor chip includes a semiconductor device connected between a first node to which a power supply voltage is applied and a second node to which a ground voltage is applied, a first ring oscillator connected to the first node through a first supply switch and the second node through a first ground switch and a second ring oscillator connected to the first node through a second supply switch and the second node through a second ground switch, wherein the first supply and ground switches are configured to operate in response to a first control signal, thereby operating the first ring oscillator, and the second supply and ground switches are configured to operate in response to a second control signal, thereby operating the second ring oscillator.

Abstract: Provided is a substrate processing apparatus, more particularly, a substrate processing apparatus capable of suppressing an generation of process by-products in a substrate processing process. A substrate processing apparatus includes a chamber part configured to provide an inner space in which a substrate is processed, a gas supply part configured to supply a process gas to the inner space, a substrate support configured to support the substrate, a heating liner provided inside the chamber part to at least partially surround the inner space, and a heating part configured to heat the heating liner.

Abstract: A positive electrode active material precursor includes Ni and Mn and secondary particles formed by the aggregation of a plurality of primary particles. The secondary particles have a ratio of a core area to a total area of the particles ranging from 28.7% to 34.1%, and a porosity ranging from 11.3% to 11.7%. Also provided is a method for preparing the positive electrode active material precursor. Additionally, a positive electrode active material including a reaction product of the positive electrode active material precursor and a lithium raw material is provided. Also provided is a method for preparing a positive electrode active material using the positive electrode active material precursor.

Abstract: Provided are a substrate processing apparatus and a substrate processing method, which are capable of independently performing processes on a plurality of substrates in a multi-station chamber.

Abstract: A seat adjustment apparatus for a vehicle includes a plurality of connection frames provided along two opposite sides of a seat frame and two opposite sides of a back frame and configured to move forward or rearward depending on a folding direction of the back frame, guide parts provided at middle points of the plurality of connection frames and configured to be moved upward or downward by forward or rearward movements of the connection frames, and a seat cushion pipe provided inside the two connection frames and configured such that front ends of the seat cushion pipe are connected to the guide parts, and a position of a rear end of the seat cushion pipe is adjusted upward or downward by upward or downward movements of the guide parts.

Abstract: A battery case for a vehicle includes a lower panel supporting lower sides of a plurality of battery modules, the lower panel including a sidewall bent and extending upwards from the lower panel, a side member surrounding and supporting the sidewall of the lower panel to protect side surfaces of the battery modules, and a plurality of reinforcing members, each of which is disposed between neighboring ones of the battery modules such that two opposite ends of the reinforcing members are coupled to and supported by the sidewall.

Abstract: A plasma processing apparatus may include a support configured to receive a substrate, a gas distribution plate (GDP) including a plurality of nozzles facing the support, a main splitter configured to supply a process gas, and an additional splitter configured to supply an acceleration gas or a deceleration gas. The plurality of nozzles may include a plurality of central nozzles, a plurality of outer nozzles, a plurality of middle nozzles configured to spray the process gas and the acceleration gas, a plurality of first nozzles, and a plurality of second nozzles.

Abstract: In a plasma processing method, a substrate is loaded onto a lower electrode within a chamber. A plasma power is applied to form plasma within the chamber. A voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion is generated. Generating the voltage function may include setting a slope of the ramp portion and setting a duration ratio of the ramp portion to a cycle of the voltage function in order to control an ion energy distribution generated at a surface of the substrate. A bias power of the nonsinusoidal wave is applied to the lower electrode.

Abstract: A semiconductor processing apparatus includes a chamber housing, an electrostatic chuck disposed in the chamber housing, the electrostatic chuck being configured to hold a semiconductor wafer, an edge ring surrounding the electrostatic chuck, the edge ring including a ring electrode disposed within the edge ring, and a ring voltage supply configured to supply a ring voltage to the ring electrode, the ring voltage having a non-sinusoidal periodic waveform, wherein each period of the non-sinusoidal periodic waveform comprises a positive voltage applied during a first time period and a negative voltage applied during a second time period, and wherein the negative voltage has a magnitude that increases during the second time period.

Abstract: A battery case for a vehicle includes a lower panel supporting lower sides of a plurality of battery modules, the lower panel including a sidewall bent and extending upwards from the lower panel, a side member surrounding and supporting the sidewall of the lower panel to protect side surfaces of the battery modules, and a plurality of reinforcing members, each of which is disposed between neighboring ones of the battery modules such that two opposite ends of the reinforcing members are coupled to and supported by the sidewall.

Abstract: A subject-based ranking determining method and system based on an interaction between a writer and a reader. A subject-based ranking determining method may include evaluating a writer that creates content of a corresponding subject for each subject based on the corresponding subject; and providing a search result in which an evaluation result of the writer on a subject corresponding to an input query is applied to a content ranking in response to input of the query.

Abstract: In a plasma processing method, a substrate is loaded onto a lower electrode within a chamber. A plasma power is applied to form plasma within the chamber. A voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion is generated. Generating the voltage function may include setting a slope of the ramp portion and setting a duration ratio of the ramp portion to a cycle of the voltage function in order to control an ion energy distribution generated at a surface of the substrate. A bias power of the nonsinusoidal wave is applied to the lower electrode.

Abstract: In a plasma processing method, a substrate is loaded onto a lower electrode within a chamber. A plasma power is applied to form plasma within the chamber. A voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion is generated. Generating the voltage function may include setting a slope of the ramp portion and setting a duration ratio of the ramp portion to a cycle of the voltage function in order to control an ion energy distribution generated at a surface of the substrate. A bias power of the nonsinusoidal wave is applied to the lower electrode.

Abstract: A semiconductor processing apparatus includes a chamber housing, an electrostatic chuck disposed in the chamber housing, the electrostatic chuck being configured to hold a semiconductor wafer, an edge ring surrounding the electrostatic chuck, the edge ring including a ring electrode disposed within the edge ring, and a ring voltage supply configured to supply a ring voltage to the ring electrode, the ring voltage having a non-sinusoidal periodic waveform, wherein each period of the non-sinusoidal periodic waveform comprises a positive voltage applied during a first time period and a negative voltage applied during a second time period, and wherein the negative voltage has a magnitude that increases during the second time period.

Abstract: A semiconductor processing apparatus includes a chamber housing, an electrostatic chuck disposed in the chamber housing, the electrostatic chuck being configured to hold a semiconductor wafer, an edge ring surrounding the electrostatic chuck, the edge ring including a ring electrode disposed within the edge ring, and a ring voltage supply configured to supply a ring voltage to the ring electrode, the ring voltage having a non-sinusoidal periodic waveform, wherein each period of the non-sinusoidal periodic waveform comprises a positive voltage applied during a first time period and a negative voltage applied during a second time period, and wherein the negative voltage has a magnitude that increases during the second time period.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.

Abstract: In a plasma processing method, a substrate is loaded onto a lower electrode within a chamber. A plasma power is applied to form plasma within the chamber. A voltage function of a nonsinusoidal wave having a DC pulse portion and a ramp portion is generated. Generating the voltage function may include setting a slope of the ramp portion and setting a duration ratio of the ramp portion to a cycle of the voltage function in order to control an ion energy distribution generated at a surface of the substrate. A bias power of the nonsinusoidal wave is applied to the lower electrode.

Abstract: A semiconductor processing apparatus includes a chamber housing, an electrostatic chuck disposed in the chamber housing, the electrostatic chuck being configured to hold a semiconductor wafer, an edge ring surrounding the electrostatic chuck, the edge ring including a ring electrode disposed within the edge ring, and a ring voltage supply configured to supply a ring voltage to the ring electrode, the ring voltage having a non-sinusoidal periodic waveform, wherein each period of the non-sinusoidal periodic waveform comprises a positive voltage applied during a first time period and a negative voltage applied during a second time period, and wherein the negative voltage has a magnitude that increases during the second time period.

Abstract: A plasma processing apparatus may include a support configured to receive a substrate, a gas distribution plate (GDP) including a plurality of nozzles facing the support, a main splitter configured to supply a process gas, and an additional splitter configured to supply an acceleration gas or a deceleration gas. The plurality of nozzles may include a plurality of central nozzles, a plurality of outer nozzles, a plurality of middle nozzles configured to spray the process gas and the acceleration gas, a plurality of first nozzles, and a plurality of second nozzles.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an oxide film on a target layer, forming a first mask film on the oxide film, wherein the first mask film contains a semiconductor material and has a first thickness and a first etch selectivity with respect to the oxide film, forming a second mask film on the first mask film, wherein the second mask film contains a metal and has a second thickness smaller than the first thickness and a second etch selectivity larger than the first etch selectivity with respect to the oxide film, forming a second mask film pattern by patterning the second mask film, forming a first mask film pattern by patterning the first mask film, etching some portions of the oxide film by using the second mask film pattern as an etch mask film, and etching the rest of the oxide film by using the first mask film pattern as an etch mask film to form a hole, wherein the target layer is exposed via the hole.