Abstract: Provided are a controller configured to perform secure deletion, a key-value storage device including the controller, and a method of operating the key-value storage device. The key-value storage device includes a non-volatile memory including a plurality of blocks, and a controller configured to control a memory operation on the non-volatile memory, receive a write command including a first key and a first value corresponding to the first key from a host, write data of a file corresponding to the first value to at least one block of the plurality of blocks of the non-volatile memory in response to the write command, receive a secure deletion command for the first value from the host, and erase the at least one block to which the first value is written, in response to the secure deletion command.

Abstract: A nonvolatile memory device includes a memory cell array including a plurality of nonvolatile memory cells; a page buffer circuit connected to the memory cell array through a plurality of bit lines; a calculation circuit configured to perform a calculation on information bits and weight bits based on a calculation window having a first size, the information bits and weight bits being included in a user data set, the memory cell array being configured to store the user data set, the calculation circuit being further configured to receive the user data set through the page buffer circuit; and a data input/output (I/O) circuit connected to the calculation circuit, wherein the calculation circuit is further configured to provide an output data set to the data I/O circuit in response to the calculation circuit completing the calculation with respect to all of the information bits and the weight bits, and wherein the output data set corresponds to a result of the completed calculation.

Abstract: In a method of operating the memory system, the method includes detecting whether data of a read-out unit read from a first cell region has an error correction code (ECC) failure, in response to an external read-out request for the read-out unit, recovering and outputting the data of the read-out unit by performing Redundant Array of Inexpensive Disk (RAID) recovery by using data and RAID parity read from other cell regions, recovering a plurality of pieces of data stored in the first cell region by performing the RAID recovery using the data and RAID parity read from the other cell regions, and migrating the recovered plurality of pieces of data to a second cell region in units of cell regions.

Abstract: Provided are a controller configured to perform secure deletion, a key-value storage device including the controller, and a method of operating the key-value storage device. The key-value storage device includes a non-volatile memory including a plurality of blocks, and a controller configured to control a memory operation on the non-volatile memory, receive a write command including a first key and a first value corresponding to the first key from a host, write data of a file corresponding to the first value to at least one block of the plurality of blocks of the non-volatile memory in response to the write command, receive a secure deletion command for the first value from the host, and erase the at least one block to which the first value is written, in response to the secure deletion command.

Abstract: In an operating method of a memory controller, the memory controller includes a logical-to-logical (L2L) mapping table including mapping information between a first logical area and a second logical area and a logical-to-physical (L2P) mapping table including mapping information between the second logical area and a physical area of a memory device. The operating method includes receiving a first logical address of the first logical area and a first command for changing the L2L mapping table to access first data stored in the memory device through the first logical address, detecting a second logical address of the second logical area mapped to a physical address of the physical area in which the first data is stored, in response to the first command, and changing the L2L mapping table to map the first logical address to the second logical address.

Abstract: A memory access control method that can prevent a cell hammer phenomenon includes setting at least a part of all the memory cells a safe memory region, and setting the remaining memory cells to a normal memory region. In the safe memory region, some cells set to an enabled state are accessible for data writing or reading, and the remaining cells set to a disabled state are inaccessible. Based on a safe address mapping algorithm, access to all memory cells in the safe memory region is controlled such that access to the enabled memory cells is allowed and access to the disabled memory cells is prevented. The enabled memory cells in the safe memory region are spaced apart from each other by at least one disabled memory cell in a horizontal and/or vertical direction.

Abstract: In an operating method of a memory controller, the memory controller includes a logical-to-logical (L2L) mapping table including mapping information between a first logical area and a second logical area and a logical-to-physical (L2P) mapping table including mapping information between the second logical area and a physical area of a memory device. The operating method includes receiving a first logical address of the first logical area and a first command for changing the L2L mapping table to access first data stored in the memory device through the first logical address, detecting a second logical address of the second logical area mapped to a physical address of the physical area in which the first data is stored, in response to the first command, and changing the L2L mapping table to map the first logical address to the second logical address.

Abstract: In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.

Abstract: In a method of operating the memory system, the method includes detecting whether data of a read-out unit read from a first cell region has an error correction code (ECC) failure, in response to an external read-out request for the read-out unit, recovering and outputting the data of the read-out unit by performing Redundant Array of Inexpensive Disk (RAID) recovery by using data and RAID parity read from other cell regions, recovering a plurality of pieces of data stored in the first cell region by performing the RAID recovery using the data and RAID parity read from the other cell regions, and migrating the recovered plurality of pieces of data to a second cell region in units of cell regions.

Abstract: A method of processing input/output (I/O) in a storage device includes adjusting a read anticipation time based on a change of a resource management status related to operations of the storage device and performing an I/O processing operation at the storage device based on the adjusted read anticipation time. The I/O processing operation is performed to postpone an operation regarding a program command and perform a read command at higher priority than a write command at the storage device in a period from completion of a read operation at the storage device until the read anticipation time has elapsed.

Abstract: A memory access control method that can prevent a cell hammer phenomenon includes setting at least a part of all the memory cells a safe memory region, and setting the remaining memory cells to a normal memory region. In the safe memory region, some cells set to an enabled state are accessible for data writing or reading, and the remaining cells set to a disabled state are inaccessible. Based on a safe address mapping algorithm, access to all memory cells in the safe memory region is controlled such that access to the enabled memory cells is allowed and access to the disabled memory cells is prevented. The enabled memory cells in the safe memory region are spaced apart from each other by at least one disabled memory cell in a horizontal and/or vertical direction.

Abstract: In one aspect, data is stored in a solid state memory which includes first and second memory layers. A first assessment is executed to determine whether received data is hot data or cold data. Received data which is assessed as hot data during the first assessment is stored in the first memory layer, and received data which is first assessed as cold data during the first assessment is stored in the second memory layer. Further, a second assessment is executed to determine whether the data stored in the first memory layer is hot data or cold data. Data which is then assessed as cold data during the second assessment is migrated from the first memory layer to the second memory layer.

Abstract: A method of processing input/output (I/O) in a storage device includes adjusting a read anticipation time based on a change of a resource management status related to operations of the storage device and performing an I/O processing operation at the storage device based on the adjusted read anticipation time. The I/O processing operation is performed to postpone an operation regarding a program command and perform a read command at higher priority than a write command at the storage device in a period from completion of a read operation at the storage device until the read anticipation time has elapsed.

Abstract: In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.

Abstract: In one aspect, data is stored in a solid state memory which includes first and second memory layers. A first assessment is executed to determine whether received data is hot data or cold data. Received data which is assessed as hot data during the first assessment is stored in the first memory layer, and received data which is first assessed as cold data during the first assessment is stored in the second memory layer. Further, a second assessment is executed to determine whether the data stored in the first memory layer is hot data or cold data. Data which is then assessed as cold data during the second assessment is migrated from the first memory layer to the second memory layer.

Abstract: In one aspect, data is stored in a solid state memory which includes first and second memory layers. A first assessment is executed to determine whether received data is hot data or cold data. Received data which is assessed as hot data during the first assessment is stored in the first memory layer, and received data which is first assessed as cold data during the first assessment is stored in the second memory layer. Further, a second assessment is executed to determine whether the data stored in the first memory layer is hot data or cold data. Data which is then assessed as cold data during the second assessment is migrated from the first memory layer to the second memory layer.

Abstract: In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.

Abstract: A tree data structure is stored in a flash memory device by storing a leaf node and an index node comprising a pointer to the leaf node in a same page of the flash memory device, which may be read on a per-page basis. A modified version of the leaf node and a modified version of the index node may be stored in a new page of the flash memory device when, for example, a key value is added to or deleted from the leaf node.

Abstract: A method of manipulating data includes receiving a data manipulation command for corresponding data, which corresponds to a first logical block address, to a second logical block address. The method further includes mapping the second logical block address to a physical block address, which is mapped to the first logical block address, in response to the data manipulation command. A system for manipulating data includes a host and a flash translation layer. The host transmits a data manipulation command for corresponding data, which corresponds to a first logical block address, to a second logical block address. The flash translation layer maps the second logical block address to a physical block address, which is mapped to the first logical block address, in response to the data manipulation command.

Abstract: In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.