Abstract: The present disclosure provides a controller which comprises a command generator configured to generate a command to non volatile memory, and buffer configured to receive a first data and a second data and configured to combine the first data and the second data, an ECC unit configured to perform the ECC decoding. And the first page data may include at least one error bit corresponding to an error location table and the second page data may include at least one original bit which can be replaced with the error bit. The buffer may replace the at least one error bit with the said at least one original bit. The error location table may save information of location for the repeated error bit.

Abstract: A cooperative memory card system includes a memory card device, and a host in signal communication with the memory card device, where the host assumes at least one memory management function for the memory card device; and a corresponding method of cooperative memory management between a host and a memory card device includes selecting at least one of several memory management functions to be performed by the host for the device.

Abstract: A method and system for page preloading using a control flow are provided. The method includes extracting preload page information from one or more pages in a first program code, and generating a second program code including the first program code and the extracted preload page information. The second program code is stored in non-volatile memory. When loading a page from the second program code stored in the non-volatile memory into main memory, preloading one or more pages from the non-volatile memory based on the preload page information stored in the loaded page.

Abstract: In one aspect, data is stored in a solid state memory which includes first and second memory layers. A first assessment is executed to determine whether received data is hot data or cold data. Received data which is assessed as hot data during the first assessment is stored in the first memory layer, and received data which is first assessed as cold data during the first assessment is stored in the second memory layer. Further, a second assessment is executed to determine whether the data stored in the first memory layer is hot data or cold data. Data which is then assessed as cold data during the second assessment is migrated from the first memory layer to the second memory layer.

Abstract: In one aspect, data is stored in a solid state memory which includes first and second memory layers. A first assessment is executed to determine whether received data is hot data or cold data. Received data which is assessed as hot data during the first assessment is stored in the first memory layer, and received data which is first assessed as cold data during the first assessment is stored in the second memory layer. Further, a second assessment is executed to determine whether the data stored in the first memory layer is hot data or cold data. Data which is then assessed as cold data during the second assessment is migrated from the first memory layer to the second memory layer.

Abstract: In one aspect, data is stored in a solid state memory which includes first and second memory layers. A first assessment is executed to determine whether received data is hot data or cold data. Received data which is assessed as hot data during the first assessment is stored in the first memory layer, and received data which is first assessed as cold data during the first assessment is stored in the second memory layer. Further, a second assessment is executed to determine whether the data stored in the first memory layer is hot data or cold data. Data which is then assessed as cold data during the second assessment is migrated from the first memory layer to the second memory layer.

Abstract: A memory controller analyzes read data received from a memory device and first error correction code (ECC) data of the read data. A control unit generates a plurality of sub-data from write data to be written in the memory device where the number of error bits in the read data is greater than a number of error bits that can be corrected using the first ECC data. An ECC block generates the first ECC data and second ECC data by using substantially the same algorithm to correct errors in each of the sub-data. The control unit transmits each of the sub-data, the first ECC data and the second ECC data to the memory device.

Abstract: Provided are a portable storage device and a method of managing a resource of the portable storage device. The method includes converting a first DRM application into a ready status from an idle status if task processing of the first DRM application is required, and converting the first DRM application into a pending status and a second DRM application into the ready status from the idle status if task processing of the second DRM application is required.

Abstract: A method of manipulating data includes receiving a data manipulation command for corresponding data, which corresponds to a first logical block address, to a second logical block address. The method further includes mapping the second logical block address to a physical block address, which is mapped to the first logical block address, in response to the data manipulation command. A system for manipulating data includes a host and a flash translation layer. The host transmits a data manipulation command for corresponding data, which corresponds to a first logical block address, to a second logical block address. The flash translation layer maps the second logical block address to a physical block address, which is mapped to the first logical block address, in response to the data manipulation command.

Abstract: A device driver including a flash memory file system and method thereof and a flash memory device and method thereof are provided. The example device driver may include a flash memory file system configured to receive data scheduled to be written into the flash memory device, the flash memory file system selecting one of a first data storage area and a second data storage area within the flash memory device to write the received data to based upon an expected frequency of updating for the received data, the first data storage area configured to store data which is expected to be updated more often than the second data storage area. The example flash memory device may include a first data storage area configured to store first data, the first data having a first expected frequency for updating and a second data storage area configured to store second data, the second data having a second expected frequency of updating, the first expected frequency being higher than the second expected frequency.

Abstract: A method of manipulating data includes receiving a data manipulation command for corresponding data, which corresponds to a first logical block address, to a second logical block address. The method further includes mapping the second logical block address to a physical block address, which is mapped to the first logical block address, in response to the data manipulation command. A system for manipulating data includes a host and a flash translation layer. The host transmits a data manipulation command for corresponding data, which corresponds to a first logical block address, to a second logical block address. The flash translation layer maps the second logical block address to a physical block address, which is mapped to the first logical block address, in response to the data manipulation command.

Abstract: In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.

Abstract: A data storage device comprises a plurality of memory devices and a memory controller. The memory controller exchanges data with the memory devices via a plurality of channels. The memory controller decodes an external command to generate a driving power mode and accesses the memory devices according to the driving power mode.

Abstract: A method of controlling a non-volatile memory device includes comparing the number of banks that are in operating states with a threshold value. If the number of the banks is smaller than the threshold value, data stored in a standby bank is read. If there is no bank having data to be read, a standby bank is programmed. If the number of the banks is equal to or greater than the threshold value or if the reading or the programming is performed, it is determined whether there is a reading or programming command to be performed. If there is the reading or programming command to be performed, the process is repeated from the comparing step. The programming may include programming of a most significant bit (MSB) page or a least significant bit (LSB) page.

Abstract: A data storage device for processing a command includes a host interface and a controller. The host interface stores program information sent within the command from a host. The controller decodes the program information that indicates a memory type to be accessed for the command. In addition, the controller determines whether the specified memory type can be accessed according to the command. The controller performs the command by accessing the memory type when the memory type specified by the program information is available for access.

Abstract: Provided is a programming method that increases writing performance of a flash memory device. The programming method for a flash memory device that includes a plurality of banks including a plurality of memory cells for storing multi-bit data includes the following: programming a most significant bit (MSB) page with respect to banks of a first bank group; programming a least significant bit (LSB) page with respect to banks of a second bank group; programming the MSB page with respect to the banks of the second bank group; and programming the LSB page with respect to the banks of the first bank group.

Abstract: The present disclosure provides a controller which comprises a command generator configured to generate a command to non volatile memory, and buffer configured to receive a first data and a second data and configured to combine the first data and the second data, an ECC unit configured to perform the ECC decoding. And the first page data may include at least one error bit corresponding to an error location table and the second page data may include at least one original bit which can be replaced with the error bit. The buffer may replace the at least one error bit with the said at least one original bit. The error location table may save information of location for the repeated error bit.

Abstract: Provided is a system storing data received from an application or file system in a non-volatile memory system of single-level cells and multi-level cells in accordance with one or more data characteristics. The non-volatile memory system includes a non-volatile memory cell array having a plurality of multi-level cells forming a MLC area and a plurality of single-level cells forming a SLC area, and an interface unit analyzing a characteristic of the write data and generating a corresponding data characteristic signal. A flash transition layer receives the data characteristic signal, and determines whether the write data should be stored in the MLC area or the SLC area based on whether or not the write data will be accessed by the file, or whether the address associated with the write data is frequently updated or not.

Abstract: In one aspect, a method of writing data in a flash memory system is provided. The flash memory system forms an address mapping pattern according to a log block mapping scheme. The method includes determining a writing pattern of data to be written in a log block, and allocating one of SLC and MLC blocks to the log block in accordance with the writing pattern of the data.

Abstract: A memory controller analyzes read data received from a memory device and first error correction code (ECC) data of the read data. A control unit generates a plurality of sub-data from write data to be written in the memory device where the number of error bits in the read data is greater than a number of error bits that can be corrected using the first ECC data. An ECC block generates the first ECC data and second ECC data by using substantially the same algorithm to correct errors in each of the sub-data. The control unit transmits each of the sub-data, the first ECC data and the second ECC data to the memory device.