Abstract: A method of fabricating a metal silicide layer over a substrate is provided. First, a hard mask layer is formed over a gate formed on a substrate and a portion of the substrate is exposed. Thereafter, a first metal silicide layer, which is a cobalt silicide or a titanium silicide layer, is formed on the exposed substrate. After that, the hard mask layer is removed and a second metal silicide layer is formed over the gate, wherein a material of the second metal silicide layer is selected from a group consisting of nickel silicide, platinum silicide, palladium silicide and nickel alloy. Since different metal silicide layers are formed on the substrate and the gate, the problem of having a high resistance in lines with a narrow line width and the problem of nickel silicide forming spikes and pipelines in the source region and the drain region are improved.

Abstract: The present invention provides a physical vapor deposition device for forming a metallic layer with a predetermined thickness on a semiconductor wafer. The PVD device comprises a chamber, a wafer chuck installed at the bottom end of the chamber through which the semiconductor wafer is hold horizontally, a metallic ion generator for generating metallic ions, an electric field generator for forming a vertical electric field above the wafer chuck that guides the metallic ions toward the wafer chuck, and a magnetic field generator. The magnetic field generator generates a magnetic field perpendicular to the direction of movement of the metallic ions to create a horizontal moving force on the metallic ions thus causing the metallic ions to deposit on the semiconductor wafer at a slant angle.