Abstract: A semiconductor device includes a first substrate including a surface, and a pad array on the surface of the substrate, wherein the pad array comprises a first type pad and a second type pad located on a same level. The semiconductor device further includes a conductive bump connecting either the first type pad or the second type pad to a second substrate and a via connected a conductive feature at a different level to the first type pad and the via located within a projection area of the first type pad and directly contacting the first type pad. The semiconductor device also has a dielectric in the substrate and directly contacting the second type pad, wherein the second type pad is floated on the dielectric.

Abstract: In a method for forming a packaging structure, a metal pad is formed on a semiconductor substrate, and a first polymer insulating layer is formed over the semiconductor substrate. An opening passing through the first polymer insulating layer is formed to expose a portion of the metal pad. A copper-containing material is deposited in the opening and over the first polymer insulating layer, thereby forming a copper-containing layer having a first thickness and a first width over the first polymer insulating layer. A conductive bump having a second width is formed over the copper-containing layer, in which the second width is smaller than the first width. An exposed portion of the copper-containing layer is etched using the conductive bump as a mask until the exposed portion is reduced to a second thickness, thereby forming a monolithic copper-containing structure.

Abstract: The present disclosure provides a semiconductor package, which includes a substrate, a passivation layer, a post-passivation interconnect (PPI) having a top surface; and a conductive structure. The top surface of the PPI includes a first region receiving the conductive structure, and a second region surrounding the first region. The second region includes metal derivative transformed from materials made of the first region. The present disclosure provide a method of manufacturing a semiconductor package, including forming a first flux layer covering a portion of a top surface of a PPI; transforming a portion of the top surface of the PPI uncovered by the first flux layer into a metal derivative layer; removing the first flux layer; forming a second flux layer on the first region of the PPI; dropping a solder ball on the flux layer; and forming electrical connection between the solder ball and the PPI.

Abstract: In a method for forming a packaging structure, a metal pad is formed on a semiconductor substrate, and a first polymer insulating layer is formed over the semiconductor substrate. An opening passing through the first polymer insulating layer is formed to expose a portion of the metal pad. A copper-containing material is deposited in the opening and over the first polymer insulating layer, thereby forming a copper-containing layer having a first thickness and a first width over the first polymer insulating layer. A conductive bump having a second width is formed over the copper-containing layer, in which the second width is smaller than the first width. An exposed portion of the copper-containing layer is etched using the conductive bump as a mask until the exposed portion is reduced to a second thickness, thereby forming a monolithic copper-containing structure.

Abstract: An automatic pill grasping apparatus includes an enclosure, a control chip, a pill grasping mechanism, and a pill storage mechanism. The enclosure includes a base. The pill grasping mechanism includes a grasping arm, a nozzle, and a driving mechanism. The nozzle being is engaged with the grasping arm, and the driving mechanism is attached to the base. The pill storage mechanism includes a plurality of pill storage cases for storing pills and an actuating mechanism attached to the base. The control chip is configured to control the actuating mechanism to rotate the plurality of pill storage cases in a first plane substantially parallel to the base and control the driving mechanism to rotate the grasping arm in a second plane perpendicular to the first plane, for rotating the nozzle to stretch into the one of the plurality of pill storage cases to pick a pill.

Abstract: A pill grasping method comprises rotating a grasping arm with a nozzle to a predetermined initial position driven by a driving mechanism, rotating a number of pill storage cases to position one of the pill storage cases with a set number of pills to a predetermined grasping pill position driven by an actuating mechanism, rotating the grasping arm to enter into the corresponding pill storage case, starting a pump to generate a vacuum in the nozzle for sucking a pill, and determining if an actual pressure value in a pipe connecting the nozzle to the pump is less than a predetermined pressure value. The grasping arm is rotated to the predetermined initial position when the actual pressure value is less than the predetermined pressure value.

Abstract: A monitoring system includes a cloud server, a first terminal, a second terminal, and a third terminal. The first, second and third terminal are connected to the cloud server. The cloud server includes an updating module and a storing module. The first terminal includes an obtaining module. The second terminal includes an analyzing module. The third terminal includes a downloading module. The obtaining module is used obtain a Body Mass Index to the cloud server, and the analyzing module is used to receive an updated dosage of reagents according to the Body Mass Index to the cloud server. The updating module is used to update an original dosage of reagents in the storing module according the updated dosage of reagents, and the downloading module is used to download the updated dosage of reagents, for allowing the third terminal to dispense pills. The disclosure further provides a monitoring method.

Abstract: A 3D semiconductor package using an interposer is provided. In an embodiment, an interposer is provided having a first die electrically coupled to a first side of the interposer and a second die electrically coupled to a second side of the interposer. The interposer is electrically coupled to an underlying substrate, such as a packaging substrate, a high-density interconnect, a printed circuit board, or the like. The substrate has a cavity such that the second die is positioned within the cavity. The use of a cavity may allow smaller conductive bumps to be used, thereby allowing a higher number of conductive bumps to be used. A heat sink may be placed within the cavity to aid in the dissipation of the heat from the second die.

Abstract: A pill case assembly for holding a number of pills includes a case body and a shake member. The case body receives the number of pills. The shake member is located beneath the case body and movable to shake the case body, for dispersing the number of pills.

Abstract: The present disclosure provides a carrier substrate, a device including the carrier substrate, and a method of bonding the carrier substrate to a chip. An exemplary device includes a carrier substrate having a chip region and a periphery region, and a chip bonded to the chip region of the carrier substrate. The carrier substrate includes a reinforcement structure embedded within the periphery region.

Abstract: An automatic pill dispenser includes a chassis, a pill dispensing box located on the chassis, a pill box located on the chassis for a plurality of pills, and a pill fetching assembly. The pill fetching assembly is located on the chassis. The pill fetching assembly includes a driving device and a fetching device. The fetching device includes a boom and an arm assembly. The arm assembly is located on an end of the boom to fetch the plurality of pills from the pill box. The driving device includes a cam adjacent to the boom. The fetching device rotates relative to the chassis in a horizontal plane. The cam urges the fetching device to rotate within a vertical plane.

Abstract: A device includes a package substrate including a first non-reflowable metal bump extending over a top surface of the package substrate; a die over and bonded to the package substrate; and a package component over the die and bonded to the package substrate. The package component includes a second non-reflowable metal bump extending below a bottom surface of the package component. The package component is selected from the group consisting essentially of a device die, an additional package substrate, and combinations thereof. A solder bump bonds the first non-reflowable metal bump to the second non-reflowable metal bump.

Abstract: Apparatus and methods for forming a heat spreader on a substrate to release heat for a semi-conductor package are disclosed. The apparatus comprises a substrate. A dielectric layer is formed next to the substrate and in contact with a surface of the substrate. A heat spreader is formed next to the substrate and in contact with another surface of the substrate. A passivation layer is formed next to the dielectric layer. A connection pad is placed on top of the passivation layer. The substrate may comprise additional through-silicon-vias. The contact surface between the substrate and the heat spreader may be a scraggy surface. The packaging method further proceeds to connect a chip to the connection pad by way of a connection device such as a solder ball or a bump.

Abstract: A 3D semiconductor package using an interposer is provided. In an embodiment, an interposer is provided having a first die electrically coupled to a first side of the interposer and a second die electrically coupled to a second side of the interposer. The interposer is electrically coupled to an underlying substrate, such as a packaging substrate, a high-density interconnect, a printed circuit board, or the like. The substrate has a cavity such that the second die is positioned within the cavity. The use of a cavity may allow smaller conductive bumps to be used, thereby allowing a higher number of conductive bumps to be used. A heat sink may be placed within the cavity to aid in the dissipation of the heat from the second die.

Abstract: A 3D semiconductor package using an interposer is provided. In an embodiment, an interposer is provided having a first die electrically coupled to a first side of the interposer and a second die electrically coupled to a second side of the interposer. The interposer is electrically coupled to an underlying substrate, such as a packaging substrate, a high-density interconnect, a printed circuit board, or the like. The substrate has a cavity such that the second die is positioned within the cavity. The use of a cavity may allow smaller conductive bumps to be used, thereby allowing a higher number of conductive bumps to be used. A heat sink may be placed within the cavity to aid in the dissipation of the heat from the second die.

Abstract: A semiconductor device has a pad structure with a ring-shaped stress buffer layer between a metal pad and an under-bump metallization (UBM) layer. The stress buffer layer is formed of a dielectric layer with a dielectric constant less than 3.5, a polymer layer, or an aluminum layer. The stress buffer layer is a circular ring, a square ring, an octagonal ring, or any other geometric ring.

Abstract: The present disclosure provides a carrier substrate, a device including the carrier substrate, and a method of bonding the carrier substrate to a chip. An exemplary device includes a carrier substrate having a chip region and a periphery region, and a chip bonded to the chip region of the carrier substrate. The carrier substrate includes a reinforcement structure embedded within the periphery region.

Abstract: A circuit board disclosed in the present invention includes a core board on which a first circuit layer is placed, wherein the first circuit layer has a plurality of conductive pads; and at least one built-up structure covering the surface of the circuit board, which comprises a dielectric layer, a second circuit layer, and a plurality of conductive vias without being surrounded by annular metal rings. The conductive vias are conducted with the conductive pads of the first circuit layer and the second circuit layer. Besides, the surface of the second circuit layer is in the same height as the surface of the dielectric layer. Also, the present invention provides a method for manufacturing the above-mentioned circuit board structure. Therefore, a circuit board having fine circuits can be formed, and the shape of the circuit can be ensured efficiently. Moreover, electric performances of the circuit board can be improved.

Abstract: A semiconductor device has a pad structure with a ring-shaped stress buffer layer between a metal pad and an under-bump metallization (UBM) layer. The stress buffer layer is formed of a dielectric layer with a dielectric constant less than 3.5, a polymer layer, or an aluminum layer. The stress buffer layer is a circular ring, a square ring, an octagonal ring, or any other geometric ring.

Abstract: A device includes a package substrate including a first non-reflowable metal bump extending over a top surface of the package substrate; a die over and bonded to the package substrate; and a package component over the die and bonded to the package substrate. The package component includes a second non-reflowable metal bump extending below a bottom surface of the package component. The package component is selected from the group consisting essentially of a device die, an additional package substrate, and combinations thereof. A solder bump bonds the first non-reflowable metal bump to the second non-reflowable metal bump.