Abstract: The invention provides polynucleotides that are specifically expressed in kidney function or kidney disorders. The invention also provides compositions, probes, expression vectors, host cells, proteins encoded by the polynucleotides and agonist, antagonists and antibodies which specifically bind the proteins. The invention also provides methods for assessing kidney function and for the diagnosis, prognosis, treatment and evaluation of therapies for kidney disorders.

Abstract: The invention provides polynucleotides that are differentially expressed in breast cancer. The invention also provides a combination of polynucleotides, proteins encoded by the polynucleotides, and antibodies which specifically bind a protein, compositions, probes, expression vectors, and host cells. The invention also provides methods for the diagnosis, prognosis, treatment and evaluation of therapies for breast cancer.

Abstract: Improved methods for designing molecular conjugate therapeutics are described. Antibodies are described having specificity for a targeting antigen, said antigen comprising one or more MHC-binding peptides bound to a corresponding class I MHC molecule. When linked to a label or toxic agent, the resulting antibody conjugate can be used for diagnosis, imaging and for treatment against pathogens.

Abstract: The invention provides polynucleotides that are specifically and differentially expressed in ovarian cancer, particularly serous papillary carcinoma. The invention also provides compositions, probes, expression vectors, host cells, proteins encoded by the polynucleotides and antibodies which specifically bind the proteins. The invention also provides methods for the diagnosis, prognosis and treatment of ovarian cancer.

Abstract: A method for controlling and/or calibrating rapid thermal process systems is described. One or more wafers comprising a silicon semiconductor substrate having a refractory metal layer thereon are silicided in a RTP system at different temperatures. Sheet resistance uniformity of the wafer is measured thereby detecting silicidation phase transition temperature points at the highest uniformity points. The temperature points are used to calibrate or to reset the RTP system. A plurality of wafers comprising a silicon semiconductor substrate having a refractory metal layer thereon can be silicided in each of a plurality of rapid thermal process systems. Sheet resistance uniformity of each of the wafers is measured thereby detecting silicidation phase transition temperature points by highest sheet resistance uniformity for each of the RTP systems. The temperature points are used to match temperatures for each of the RTP systems.

Abstract: A method for controlling and/or calibrating rapid thermal process systems is described. One or more wafers comprising a silicon semiconductor substrate having a refractory metal layer thereon are silicided in a RTP system at different temperatures. Sheet resistance uniformity of the wafer is measured thereby detecting silicidation phase transition temperature points at the highest uniformity points. The temperature points are used to calibrate or to reset the RTP system. A plurality of wafers comprising a silicon semiconductor substrate having a refractory metal layer thereon can be silicided in each of a plurality of rapid thermal process systems. Sheet resistance uniformity of each of the wafers is measured thereby detecting silicidation phase transition temperature points by highest sheet resistance uniformity for each of the RTP systems. The temperature points are used to match temperatures for each of the RTP systems.

Abstract: The design of a special type of optical superlattice and its application in the all-solid state laser is involved in this invention. Nd ions doped laser crystal in common use can radiate three relatively intense spectral lines when excited: the first wavelength is around 900 nm; the second wavelength is around 1064 nm; the third wavelength is around 1300 nm, whose accurate wavelength are depended on their host crystal (for example, to Nd:YAG, they are 946 nm, 1064 nm and 1319 nm, respectively). On the other hand, for LiNbO3 (LN), LiTaO3 (LT), KTP and other ferroelectric crystals, the positive and negative 180° ferroelectric domains in these crystals can be arranged orderly according to certain sequence via crystal growth, electric field poling, and other state-of-the-art domain reversion technique, forming superlattice that is applicable to quasi-phase-matching (QPM) laser frequency conversion.

Abstract: A method for forming a thermally stable cobalt disilicide film in the fabrication of an integrated circuit is described. A semiconductor substrate is provided having silicon regions to be silicided. A cobalt layer is deposited overlying the silicon regions to be silicided. A capping layer is deposited overlying the cobalt layer. The substrate is subjected to a first rapid thermal anneal whereby the cobalt is transformed to cobalt monosilicide where it overlies the silicon regions and wherein the cobalt not overlying the silicon regions is unreacted. The unreacted cobalt layer and the capping layer are removed. A titanium layer is deposited overlying the cobalt monosilicide layer. Thereafter the substrate is subjected to a second rapid thermal anneal whereby the cobalt monosilicide is transformed to cobalt disilicide. The titanium layer provides titanium atoms which diffuse into the cobalt disilicide thereby increasing its thermal stability.

Abstract: A clock divider receives a main clock and generates divided clocks (even or odd division) each having generally a half duty cycle. The clock divider includes flip flops connected to form a master-slave counter in which the master components are clocked off a first clock and the slave components are clocked off a second clock that is inverted from the first clock. The master-slave counter is a ring counter, and outputs from the master-slave counter are routed to decoding circuitry to generate divided clocks.

Abstract: A display device containing an LCD light shutter front end to modulate light transmittance and a substantially flat gas discharge back end unit containing multiple gas discharge tunnels. The back end unit contains priming means to allow fast ignition of gas discharge and control means to allow independent discharge control of each discharge tunnel. The control circuit is further simplified to allow a small number of driving signals to control a large number of discharge tunnels. This backlight structure allows color light pulses to be generated in synchronization with the scanning operation of the front end unit. The combined operation of these two units can produce color images through time sequential color mixing principle. Compact and power efficient color display panels can be produced without the use of color filter in the LCD.

Abstract: A scanning flat back light source for use with light valve devices such as liquid crystal displays. It is formed by an array of parallel fluorescent tubes with fluorescent layers therein. One end of each tube is provided with an electrode and the other end connected together through a transverse chamber to form a single vacuum unit. When electrical potential is applied across electrodes in two different chambers, the two chambers and the portion of the transverse chamber connecting the two chambers form a fluorescent lamp where gas discharge produces ultraviolet light that causes a fluorescent layer on the inside walls of the tubes to produce single-color or multi-color light.