Abstract: Compounds active on protein kinases are described, as well as methods of using such compounds to treat diseases and conditions associated with aberrant activity of protein kinases.

Abstract: Compounds active on protein kinases are described, as well as methods of using such compounds to treat diseases and conditions associated with aberrant activity of protein kinases.

Abstract: A semiconductor processing system with ultra low-K dielectric is provided including providing a substrate having an electronic circuit, forming an ultra low-K dielectric layer, having porogens, over the substrate, blocking an incoming radiation from a first region of the ultra low-K dielectric layer, evaporating the porogens from a second region of the ultra low-K dielectric layer by projecting the incoming radiation on the second region, and removing the ultra low-K dielectric layer in the first region with a developer.

Abstract: An aligned dual damascene opening structure, comprising the following. A structure having a metal structure formed thereover. A patterned layer stack over the metal structure; the layer stack comprising, in ascending order: a patterned bottom etch stop layer; a patterned lower dielectric material layer; a patterned middle etch stop layer; and a patterned middle dielectric material layer; the lower and middle dielectric layers being comprised of the same material. An upper trench opening in the patterned bottom etch stop layer and the patterned lower dielectric material layer; and a lower via opening in the patterned middle etch stop layer and the patterned middle dielectric material layer. The lower via opening being in communication with the upper trench opening. Wherein the upper trench opening and the lower via opening comprise an aligned dual damascene opening.

Abstract: An first example method and apparatus for etching and cleaning a substrate comprises device with a first manifold and a second manifold. The first manifold has a plurality of nozzles for dispensing chemicals onto the substrate. The second manifold is attached to a vacuum source and/or a dry air/gas source. A second example embodiment is a wafer cleaning device and method that uses a manifold with capillary jet nozzles and a liquid capillary jet stream to clean substrates.

Abstract: A scene based non-uniformity, correction method super-resolution for eliminating fixed pattern noise in a video having a plurality of input images is disclosed, comprising, the steps of warping, each of the plurality of images with respect to a reference image to obtain a warped set of images; performing one of averaging and deblurring on the warped set of images to obtain an initial estimate of a reference true scene flame; warping the initial estimate of the reference true scene frame with respect to each of the plurality of images to obtain a set of estimated true signal images; performing a least square fit algorithm to estimate a gain image and an offset image given the set of estimated true signal images; applying the estimated gain image and estimated offset image to the plurality of images to obtain a clean set of images; and applying a super-resolution algorithm to the clean set of images to obtain a higher resolution version of the reference true scene frame.

Abstract: Compounds are described that are active on PPARs, including pan-active compounds. Also described are methods for developing or identifying compounds having a desired selectivity profile.

Abstract: Compounds are described that are active on PPARs, including pan-active compounds. Also described are methods for developing or identifying compounds having a desired selectivity profile.

Abstract: Compounds are described that are active on PPARs, including pan-active compounds. Also described are methods for developing or identifying compounds having a desired selectivity profile.

Abstract: A method of sputtering a Ta layer comprised of alpha phase Ta on a Cu layer. An embodiment includes a Ta sputter deposition on a Cu surface at a substrate temperature less than 200° C. Another embodiment has a pre-cooling step at a temperature less than 100° C. prior to Ta layer sputter deposition. In another non-limiting example embodiment, a pre-clean step comprising an inert gas sputter is performed prior to the tantalum sputter. Another non-limiting example embodiment provides a semiconductor structure comprising: a semiconductor structure; a copper layer over the semiconductor structure; a tantalum layer on the copper layer; the tantalum layer comprised alpha phase Ta; a metal layer on the tantalum layer.

Abstract: A method and apparatus for producing a fused image is described. In one embodiment, a first image at a first wavelength and a second image at a second wavelength are generated. Next, range information is generated and subsequently used to warp the first image in a manner that correlates to the second image. In turn, the warped first image is fused with the second image to produce the fused image.

Abstract: A high performance louvered fin for a heat exchanger is disclosed, wherein adjacent entrance louvers have increased widths and adjacent exit louvers have decreased widths in order to optimize thermal efficiency.

Abstract: In accordance with the objectives of the invention a new design and method for the implementation thereof is provided in the form of an “oxide ring”. A conventional die is provided with a guard ring or sealing ring, which surrounds and isolates the active surface area of an individual semiconductor die. The “oxide ring” of the invention surrounds the guard ring or sealing ring and forms in this manner a mechanical stress release buffer between the sawing paths of the die and the active surface area of the singulated individual semiconductor die.

Abstract: In accordance with the objectives of the invention a new method is provided for the creation of an interconnect pattern. The invention provides for a layer of Photo-Active Dielectric (PAD) to be used for the insulation material in which the interconnect pattern is created, this without the use of an overlying exposure mask of photoresist.

Abstract: An optical transceiver module includes a housing comprising a first end and a second end, an electrical interface associated with the first end and an optical interface associated with the second end. The electrical interface is adapted to be locked into a receiving cage. The optical interface is adapted to be connected with one or more optical transceiver components. The optical transceiver module includes a locating mechanism that restrains the one or more optical transceiver components. The optical transceiver module also includes a locking mechanism that can lock the optical transceiver module to a receiving cage. The optical transceiver module further includes an automatic-restoring unlocking mechanism comprising a sliding plate, an unlocking lever, and a restoration spring, wherein the automatic restoring unlocking mechanism automatically restores the sliding plate to the normal position after the optical transceiver module is unlocked from the receiving cage.

Abstract: Compounds are described that are active on PPARs, including pan-active compounds. Also described are methods for developing or identifying compounds having a desired selectivity profile.

Abstract: Compounds are described that are active on PPARs, including pan-active compounds. Also described are methods for developing or identifying compounds having a desired selectivity profile.

Abstract: One or more derived timers based on a source timer are provided to accommodate a plurality of periodic tasks while maintaining the high resolution of the source timer. To accommodate a number of periodic tasks, a number of derived timers can be selected utilizing a novel method based on the number of periodic tasks that are most time-critical, the number of tasks that are less time-critical, and the number of tasks that can be performed during the source timer interval. The interval and start time for each derived timer is selected based the source timer and number of the derived timer. After establishing the derived timers, the most time-critical tasks can be assigned to the source timer and the less time-critical tasks arranged amongst the derived timers.

Abstract: An exemplary method for displaying motherboard alarms includes the steps of: reading status information of the motherboard; classifying the status information, each kind of information corresponding to an alarm category, and each alarm category corresponding to an alarm sound; reading a configuration file; determining whether the parameters of the motherboard comply with parameter ranges set in the configuration file; determining an alarm category and setting a corresponding alarm sound, and displaying alarm interfaces if any parameter of the motherboard does not comply with the parameter ranges set in the configuration file.

Abstract: Inhibition of protein kinases having one or more cysteine residues within the ATP binding site is effected by contacting the kinase, per se or in a cell or subject, with an inhibitory-effective amount of a compound having a heterocyclic core structure comprised of two or more fused rings containing at least one nitrogen ring atom, and an electrophilic substituent that is capable of reacting with a cysteine residue within the ATP binding site of a kinase. Preferred compounds include certain pyrrolopyrimidines and oxindoles having such an electrophilic substituent and optionally an aromatic or heteroaromatic substituent that is capable of interacting with a threonine or smaller residue located in the gatekeeper position of the kinase. Kinases lacking such cysteine residues may be engineered or modified so that they are capable of being inhibited by such compounds by replacing a valine or other amino acid residue within the ATP binding site by a cysteine residue.