Abstract: The present invention relates generally to semiconductors, and more particularly, to a structure and method of minimizing shorting between epitaxial regions in small pitch fin field effect transistors (FinFETs). In an embodiment, a dielectric region may be formed in a middle portion of a gate structure. The gate structure be formed using a gate replacement process, and may cover a middle portion of a first fin group, a middle portion of a second fin group and an intermediate region of the substrate between the first fin group and the second fin group. The dielectric region may be surrounded by the gate structure in the intermediate region. The gate structure and the dielectric region may physically separate epitaxial regions formed on the first fin group and the second fin group from one another.

Abstract: A method of forming a semiconductor structure includes forming a first middle-of-line (MOL) oxide layer and a second MOL oxide layer in the semiconductor structure. The first MOL oxide layer including multiple gate stacks formed on a substrate, and each gate stack of the gate stacks including a source/drain junction. A first nitride layer is formed over a silicide in the first MOL oxide layer. A second nitride layer is formed. Trenches are formed through the second nitride layer down to the source/drain junctions. A nitride cap of the plurality of gate stacks is selectively recessed. At least one self-aligned contact area (CA) element is formed within the first nitride layer. The first MOL oxide layer is selectively recessed. An air-gap oxide layer is deposited. The air gap oxide layer is reduced to the at least one self-aligned CA element and the first nitride layer.

Abstract: The present invention relates generally to semiconductors, and more particularly, to a structure and method of minimizing shorting between epitaxial regions in small pitch fin field effect transistors (FinFETs). In an embodiment, a dielectric region may be formed in a middle portion of a gate structure. The gate structure be formed using a gate replacement process, and may cover a middle portion of a first fin group, a middle portion of a second fin group and an intermediate region of the substrate between the first fin group and the second fin group. The dielectric region may be surrounded by the gate structure in the intermediate region. The gate structure and the dielectric region may physically separate epitaxial regions formed on the first fin group and the second fin group from one another.

Abstract: A method of forming a semiconductor structure includes forming a first middle-of-line (MOL) oxide layer and a second MOL oxide layer in the semiconductor structure. The first MOL oxide layer including multiple gate stacks formed on a substrate, and each gate stack of the gate stacks including a source/drain junction. A first nitride layer is formed over a silicide in the first MOL oxide layer. A second nitride layer is formed. Trenches are formed through the second nitride layer down to the source/drain junctions. A nitride cap of the plurality of gate stacks is selectively recessed. At least one self-aligned contact area (CA) element is formed within the first nitride layer. The first MOL oxide layer is selectively recessed. An air-gap oxide layer is deposited. The air gap oxide layer is reduced to the at least one self-aligned CA element and the first nitride layer.

Abstract: A method of forming a semiconductor structure includes forming a first middle-of-line (MOL) oxide layer and a second MOL oxide layer in the semiconductor structure. The first MOL oxide layer including multiple gate stacks formed on a substrate, and each gate stack of the gate stacks including a source/drain junction. A first nitride layer is formed over a silicide in the first MOL oxide layer. A second nitride layer is formed. Trenches are formed through the second nitride layer down to the source/drain junctions. A nitride cap of the plurality of gate stacks is selectively recessed. At least one self-aligned contact area (CA) element is formed within the first nitride layer. The first MOL oxide layer is selectively recessed. An air-gap oxide layer is deposited. The air gap oxide layer is reduced to the at least one self-aligned CA element and the first nitride layer.

Abstract: The present invention relates generally to semiconductors, and more particularly, to a structure and method of minimizing shorting between epitaxial regions in small pitch fin field effect transistors (FinFETs). In an embodiment, a dielectric region may be formed in a middle portion of a gate structure. The gate structure be formed using a gate replacement process, and may cover a middle portion of a first fin group, a middle portion of a second fin group and an intermediate region of the substrate between the first fin group and the second fin group. The dielectric region may be surrounded by the gate structure in the intermediate region. The gate structure and the dielectric region may physically separate epitaxial regions formed on the first fin group and the second fin group from one another.

Abstract: Techniques are provided to fabricate metallic interconnect structures in a single metallization level, wherein different width metallic interconnect structures are formed of different metallic materials to eliminate or minimize void formation in the metallic interconnect structures. For example, a semiconductor device includes an insulating layer disposed on a substrate, and a first metallic line and a second metallic line formed in the insulating layer. The first metallic line has a first width, and the second metallic line has a second width which is greater than the first width. The first metallic line is formed of a first metallic material, and the second metallic line is formed of a second metallic material, which is different from the first metallic material. For example, the first metallic material is cobalt or ruthenium, and the second metallic material is copper.

Abstract: Techniques are provided to fabricate metallic interconnect structures in a single metallization level, wherein different width metallic interconnect structures are formed of different metallic materials to eliminate or minimize void formation in the metallic interconnect structures. For example, a semiconductor device includes an insulating layer disposed on a substrate, and a first metallic line and a second metallic line formed in the insulating layer. The first metallic line has a first width, and the second metallic line has a second width which is greater than the first width. The first metallic line is formed of a first metallic material, and the second metallic line is formed of a second metallic material, which is different from the first metallic material. For example, the first metallic material is cobalt or ruthenium, and the second metallic material is copper.

Abstract: Semiconductor structures and methods of forming such structures are disclosed. In an embodiment, the semiconductor structure comprises a substrate, a dielectric layer, and a plurality of gates, including a first gate and a pair of adjacent gates. The method comprises forming gate caps on the adjacent gates, including etching portions of the gate electrodes in the adjacent gates to recess the gate electrodes therein, and forming the caps above the recessed gate electrodes. Conductive metal trenches are formed in the dielectric layer, on the sides of the first gate; and after forming the trenches, a contact is formed over the gate electrode of the first gate and over and on one of the conductive trenches. In embodiments, the contact is a gate contact, and in other embodiments, the contact is a non-gate contact.

Abstract: The present invention relates generally to semiconductors, and more particularly, to a structure and method of minimizing shorting between epitaxial regions in small pitch fin field effect transistors (FinFETs). In an embodiment, a dielectric region may be formed in a middle portion of a gate structure. The gate structure be formed using a gate replacement process, and may cover a middle portion of a first fin group, a middle portion of a second fin group and an intermediate region of the substrate between the first fin group and the second fin group. The dielectric region may be surrounded by the gate structure in the intermediate region. The gate structure and the dielectric region may physically separate epitaxial regions formed on the first fin group and the second fin group from one another.

Abstract: A method for forming a nanosheet semiconductor device includes forming a nanosheet stack comprising channel nanosheets. The method includes depositing silicon on the nanosheet stack, the silicon completely filling a space between adjacent channel nanosheets. The method includes etching the silicon. The method includes exposing the nanosheet stack to a gas phase heat treatment.

Abstract: Semiconductor structures and methods of forming such structures are disclosed. In an embodiment, the semiconductor structure comprises a substrate, a dielectric layer, and a plurality of gates, including a first gate and a pair of adjacent gates. The method comprises forming gate caps on the adjacent gates, including etching portions of the gate electrodes in the adjacent gates to recess the gate electrodes therein, and forming the caps above the recessed gate electrodes. Conductive metal trenches are formed in the dielectric layer, on the sides of the first gate; and after forming the trenches, a contact is formed over the gate electrode of the first gate and over and on one of the conductive trenches. In embodiments, the contact is a gate contact, and in other embodiments, the contact is a non-gate contact.

Abstract: Semiconductor structures and methods of forming such structures are disclosed. In an embodiment, the semiconductor structure comprises a substrate, a dielectric layer, and a plurality of gates, including a first gate and a pair of adjacent gates. The method comprises forming gate caps on the adjacent gates, including etching portions of the gate electrodes in the adjacent gates to recess the gate electrodes therein, and forming the caps above the recessed gate electrodes. Conductive metal trenches are formed in the dielectric layer, on the sides of the first gate; and after forming the trenches, a contact is formed over the gate electrode of the first gate and over and on one of the conductive trenches. In embodiments, the contact is a gate contact, and in other embodiments, the contact is a non-gate contact.

Abstract: Semiconductor structures and methods of forming such structures are disclosed. In an embodiment, the semiconductor structure comprises a substrate, a dielectric layer, and a plurality of gates, including a first gate and a pair of adjacent gates. The method comprises forming gate caps on the adjacent gates, including etching portions of the gate electrodes in the adjacent gates to recess the gate electrodes therein, and forming the caps above the recessed gate electrodes. Conductive metal trenches are formed in the dielectric layer, on the sides of the first gate; and after forming the trenches, a contact is formed over the gate electrode of the first gate and over and on one of the conductive trenches. In embodiments, the contact is a gate contact, and in other embodiments, the contact is a non-gate contact.

Abstract: Techniques are provided to fabricate metallic interconnect structures in a single metallization level, wherein different width metallic interconnect structures are formed of different metallic materials to eliminate or minimize void formation in the metallic interconnect structures. For example, a semiconductor device includes an insulating layer disposed on a substrate, and a first metallic line and a second metallic line formed in the insulating layer. The first metallic line has a first width, and the second metallic line has a second width which is greater than the first width. The first metallic line is formed of a first metallic material, and the second metallic line is formed of a second metallic material, which is different from the first metallic material. For example, the first metallic material is cobalt or ruthenium, and the second metallic material is copper.

Abstract: Semiconductor structures and methods of forming such structures are disclosed. In an embodiment, the semiconductor structure comprises a substrate, a dielectric layer, and a plurality of gates, including a first gate and a pair of adjacent gates. The method comprises forming gate caps on the adjacent gates, including etching portions of the gate electrodes in the adjacent gates to recess the gate electrodes therein, and forming the caps above the recessed gate electrodes. Conductive metal trenches are formed in the dielectric layer, on the sides of the first gate; and after forming the trenches, a contact is formed over the gate electrode of the first gate and over and on one of the conductive trenches. In embodiments, the contact is a gate contact, and in other embodiments, the contact is a non-gate contact.

Abstract: Techniques are provided to fabricate metallic interconnect structures in a single metallization level, wherein different width metallic interconnect structures are formed of different metallic materials to eliminate or minimize void formation in the metallic interconnect structures. For example, a semiconductor device includes an insulating layer disposed on a substrate, and a first metallic line and a second metallic line formed in the insulating layer. The first metallic line has a first width, and the second metallic line has a second width which is greater than the first width. The first metallic line is formed of a first metallic material, and the second metallic line is formed of a second metallic material, which is different from the first metallic material. For example, the first metallic material is cobalt or ruthenium, and the second metallic material is copper.

Abstract: A technique relates to forming a semiconductor device. A starting semiconductor device having a fin structure patterned in a substrate, and a gate formed over the fin structure, the gate having a mid-region and an end-region is first provided. A trench is then patterned over the mid-region of the gate and a trench is patterned over the end-region of the gate. The patterned trenches are then etched over the mid-region of the gate and the end-region of the gate to form the trenches. A conformal low-k dielectric layer can then be deposited over the structure to fill the trenches and pinch off the trench formed in the mid-region and the trench formed in the end-region.

Abstract: Techniques are provided to fabricate metallic interconnect structures in a single metallization level, wherein different width metallic interconnect structures are formed of different metallic materials to eliminate or minimize void formation in the metallic interconnect structures. For example, a semiconductor device includes an insulating layer disposed on a substrate, and a first metallic line and a second metallic line formed in the insulating layer. The first metallic line has a first width, and the second metallic line has a second width which is greater than the first width. The first metallic line is formed of a first metallic material, and the second metallic line is formed of a second metallic material, which is different from the first metallic material. For example, the first metallic material is cobalt or ruthenium, and the second metallic material is copper.

Abstract: The present invention relates generally to semiconductors, and more particularly, to a structure and method of minimizing shorting between epitaxial regions in small pitch fin field effect transistors (FinFETs). In an embodiment, a dielectric region may be formed in a middle portion of a gate structure. The gate structure be formed using a gate replacement process, and may cover a middle portion of a first fin group, a middle portion of a second fin group and an intermediate region of the substrate between the first fin group and the second fin group. The dielectric region may be surrounded by the gate structure in the intermediate region. The gate structure and the dielectric region may physically separate epitaxial regions formed on the first fin group and the second fin group from one another.