Patents by Inventor Charles R. Eddy, Jr.

Charles R. Eddy, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Metal chloride seeded growth of electronic and optical materials
    Patent number: 7790230
    Abstract: A method of deposition by: depositing a metal halide on a substrate; providing a vapor that forms a material by way of chemical vapor deposition; heating the metal halide to a temperature at or above the melting point of the metal halide and at or below the melting point of the material; and contacting the metal halide with the vapor to cause growth on the substrate of a solid solution of the metal halide in the material. The metal is a rare earth metal or a transition metal.
    Type: Grant
    Filed: January 30, 2008
    Date of Patent: September 7, 2010
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Michael A Mastro, Jaime A. Freitas, Charles R. Eddy, Jr., Jihyun Kim
  • TRACKING CARBON TO SILICON RATIO IN SITU DURING SILICON CARBIDE GROWTH
    Publication number: 20100024719
    Abstract: A method of: supplying sources of carbon and silicon into a chemical vapor deposition chamber; collecting exhaust gases from the chamber; performing mass spectrometry on the exhaust gases; and correlating a partial pressure of a carbon species in the exhaust gases to a carbon:silicon ratio in the chamber.
    Type: Application
    Filed: July 31, 2008
    Publication date: February 4, 2010
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Brenda L. VanMil, Kok-Keong Lew, Rachael L. Myers-Ward, Charles R. Eddy, JR., David Kurt Gaskill
  • METAL CHLORIDE SEEDED GROWTH OF ELECTRONIC AND OPTICAL MATERIALS
    Publication number: 20090191339
    Abstract: A method of deposition by: depositing a metal halide on a substrate; providing a vapor that forms a material by way of chemical vapor deposition; heating the metal halide to a temperature at or above the melting point of the metal halide and at or below the melting point of the material; and contacting the metal halide with the vapor to cause growth on the substrate of a solid solution of the metal halide in the material. The metal is a rare earth metal or a transition metal.
    Type: Application
    Filed: January 30, 2008
    Publication date: July 30, 2009
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Michael A. Mastro, Jaime A. Freitas, Charles R. Eddy, JR., Jihyun Kim
  • METHOD OF PRODUCING EPITAXIAL LAYERS WITH LOW BASAL PLANE DISLOCATION CONCENTRATIONS
    Publication number: 20090114148
    Abstract: A method of: flowing a silicon source gas, a carbon source gas, and a carrier gas into a growth chamber under growth conditions to epitaxial grow silicon carbide on a wafer in the growth chamber; stopping or reducing the flow of the silicon source gas to interrupt the silicon carbide growth and maintaining the flow of the carrier gas while maintaining an elevated temperature in the growth chamber for a period of time; and resuming the flow of the silicon source gas to reinitiate silicon carbide growth. The wafer remains in the growth chamber throughout the method.
    Type: Application
    Filed: October 9, 2008
    Publication date: May 7, 2009
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Robert E. Stahlbush, Brenda L. VanMil, Kok-Keong Lew, Rachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, JR.
  • Technique for perfecting the active regions of wide bandgap semiconductor nitride devices
    Patent number: 7470989
    Abstract: This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The device includes a substrate, a semiconductor active material deposited on said substrate, and electrical contacts. The semiconductor active material defines raised structures having atomically smooth surfaces. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.
    Type: Grant
    Filed: August 2, 2006
    Date of Patent: December 30, 2008
    Assignee: The United States of America as represented by The Secretary of the Navy
    Inventors: Richard L Henry, Martin C Peckerar, Daniel D Koleske, Alma E Wickenden, Charles R Eddy, Jr., Ronald T Holm, Mark E Twigg
  • GaN-based permeable base transistor and method of fabrication
    Patent number: 7413958
    Abstract: An etched grooved GaN-based permeable-base transistor structure is disclosed, along with a method for fabrication of same.
    Type: Grant
    Filed: October 1, 2004
    Date of Patent: August 19, 2008
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Liberty L Gunter, Kanin Chu, Charles R Eddy, Jr., Theodore D Moustakas, Enrico Bellotti
  • Technique for perfecting the active regions of wide bandgap semiconductor nitride devices
    Patent number: 7198970
    Abstract: This invention pertains to electronic/optoelectronic devices with reduced extended defects and to a method for making it. The method includes the steps of depositing a dielectric thin film mask material on a semiconductor substrate surface; patterning the mask material to form openings therein extending to the substrate surface; growing active material in the openings; removing the mask material to form the device with reduced extended defect density; and depositing electrical contacts on the device.
    Type: Grant
    Filed: January 23, 2004
    Date of Patent: April 3, 2007
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Martin Peckerar, Richard Henry, Daniel Koleske, Alma Wickenden, Charles R. Eddy, Jr., Ronald Holm, Mark E. Twigg