Patents by Inventor Charles R. Eddy, Jr.

Charles R. Eddy, Jr. has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220406591
    Abstract: Described herein is a method for growing indium nitride (InN) materials by growing hexagonal InN using a pulsed growth method at a temperature lower than 300° C.
    Type: Application
    Filed: August 3, 2022
    Publication date: December 22, 2022
    Inventors: Neeraj Nepal, Charles R. Eddy, JR., Nadeemullah A. Mahadik, Syed B. Qadri, Michael J. Mehl
  • Patent number: 11443942
    Abstract: Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.
    Type: Grant
    Filed: September 7, 2017
    Date of Patent: September 13, 2022
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Charles R. Eddy, Jr., Nadeemullah A. Mahadik, Syed B. Qadri, Michael J. Mehl
  • Patent number: 10937649
    Abstract: Described herein is a method for growing InN, GaN, and AlN materials, the method comprising alternate growth of GaN and either InN or AlN to obtain a film of InxGa1?xN, AlxGa1?xN, AlxIn1?xN, or AlxInyGa1?(x+y)N.
    Type: Grant
    Filed: December 16, 2014
    Date of Patent: March 2, 2021
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Charles R. Eddy, Jr., Nadeemmullah A. Mahadik, Syed B. Qadri, Michael J. Mehl
  • Publication number: 20200294792
    Abstract: Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.
    Type: Application
    Filed: June 1, 2020
    Publication date: September 17, 2020
    Inventors: Neeraj Nepal, Charles R. Eddy, Jr., Nadeemullah A. Mahadik, Syed B. Qadri, Michael J. Mehl
  • Patent number: 10494738
    Abstract: A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: December 3, 2019
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Virginia Wheeler, Charles R. Eddy, Jr., Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Rachael L. Myers-Ward, Sandra C. Hangarter
  • Publication number: 20190161887
    Abstract: A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.
    Type: Application
    Filed: January 28, 2019
    Publication date: May 30, 2019
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Virginia Wheeler, Charles R. Eddy, JR., Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Rachael L. Myers-Ward, Sandra C. Hangarter
  • Patent number: 10266963
    Abstract: A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.
    Type: Grant
    Filed: January 30, 2014
    Date of Patent: April 23, 2019
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Virginia D. Wheeler, Charles R. Eddy, Jr., Francis J. Kub, Travis J. Anderson, Michael A. Mastro, Rachael L. Myers-Ward, Sandra C. Hangarter
  • Patent number: 10256090
    Abstract: A method of: providing an off-axis silicon carbide substrate, and etching the surface of the substrate with a dry gas, hydrogen, or an inert gas.
    Type: Grant
    Filed: March 11, 2014
    Date of Patent: April 9, 2019
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Rachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, Jr., Robert E. Stahlbush, Nadeemmullah A. Mahadik, Virginia D. Wheeler
  • Patent number: 10256094
    Abstract: A method of: providing an off-axis 4H—SiC substrate, and etching the surface of the substrate with hydrogen or an inert gas.
    Type: Grant
    Filed: March 11, 2014
    Date of Patent: April 9, 2019
    Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Rachael L. Myers-Ward, David Kurt Gaskill, Charles R. Eddy, Jr., Robert E. Stahlbush, Nadeemmullah A. Mahadik, Virginia D. Wheeler
  • Publication number: 20180040472
    Abstract: Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.
    Type: Application
    Filed: September 7, 2017
    Publication date: February 8, 2018
    Inventors: Neeraj Nepal, Charles R. Eddy, JR., Nadeemullah A. Mahadik, Syed B. Qadri, Michael J. Mehl
  • Patent number: 9773666
    Abstract: Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.
    Type: Grant
    Filed: June 13, 2013
    Date of Patent: September 26, 2017
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Neeraj Nepal, Charles R. Eddy, Jr., Nadeemmullah A. Mahadik, Syed B Qadri, Michael J. Mehl
  • Publication number: 20170261376
    Abstract: A method of making a variable emittance window comprising providing a metal foil substrate, applying an antireflection material layer onto the metal foil substrate, applying a protection material layer onto the antireflection material layer, applying a variable emittance material layer onto the protection material layer, annealing to form a two-step variable emittance layer, applying a transparent low emittance material layer to the two-step variable emittance layer, adhering a transparent substrate to the transparent low emittance material layer, and removing the metal foil substrate.
    Type: Application
    Filed: May 26, 2017
    Publication date: September 14, 2017
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Virginia D. Wheeler, Francis J. Kub, Charles R. Eddy, JR., Marko J. Tadjer
  • Patent number: 9679766
    Abstract: Disclosed herein is a method of: depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate; depositing an AlN inversion layer on the open areas; removing any remaining mask; and depositing a III-N epitaxial layer to simultaneously produce N-polar material and III-polar material. Also disclosed herein is: depositing an AlN inversion layer on an N-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce III-polar material. Also disclosed herein is: depositing an inversion layer on a III-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce N-polar material. Also disclosed herein is a composition having: a bulk III-N substrate; an inversion layer on portions of the substrate; and a III-N epitaxial layer on the inversion layer. The III-N epitaxial layer is of the opposite polarity of the surface of the substrate.
    Type: Grant
    Filed: May 20, 2016
    Date of Patent: June 13, 2017
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Jennifer K. Hite, Francis J. Kub, Charles R. Eddy, Jr., Nelson Garces
  • Publication number: 20160336171
    Abstract: Disclosed herein is a method of: depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate; depositing an AlN inversion layer on the open areas; removing any remaining mask; and depositing a III-N epitaxial layer to simultaneously produce N-polar material and III-polar material. Also disclosed herein is: depositing an AlN inversion layer on an N-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce III-polar material. Also disclosed herein is: depositing an inversion layer on a III-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce N-polar material. Also disclosed herein is a composition having: a bulk III-N substrate; an inversion layer on portions of the substrate; and a III-N epitaxial layer on the inversion layer. The III-N epitaxial layer is of the opposite polarity of the surface of the substrate.
    Type: Application
    Filed: May 20, 2016
    Publication date: November 17, 2016
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Jennifer K. Hite, Francis J. Kub, Charles R. Eddy, JR., Nelson Garces
  • Patent number: 9464366
    Abstract: A method for reducing/eliminating basal plane dislocations from SiC epilayers is disclosed. An article having: an off-axis SiC substrate having an off-axis angle of no more than 6°; and a SiC epitaxial layer grown on the substrate. The epitaxial layer has no more than 2 basal plane dislocations per cm2 at the surface of the epitaxial layer. A method of growing an epitaxial SiC layer on an off-axis SiC substrate by: flowing a silicon source gas, a carbon source gas, and a carrier gas into a growth chamber under growth conditions to epitaxially grow SiC on the substrate in the growth chamber. The substrate has an off-axis angle of no more than 6°. The growth conditions include: a growth temperature of 1530-1650° C.; a pressure of 50-125 mbar; a C/H gas flow ratio of 9.38×10?5-1.5×10?3; a C/Si ratio of 0.5-3; a carbon source gas flow rate during ramp to growth temperature from 0 to 15 sccm; and an electron or hole concentration of 1013-1019/cm3.
    Type: Grant
    Filed: August 20, 2010
    Date of Patent: October 11, 2016
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Rachael L Myers-Ward, David Kurt Gaskill, Brenda L VanMil, Robert E Stahlbush, Charles R. Eddy, Jr.
  • Patent number: 9396941
    Abstract: Disclosed herein is a method of: depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate; depositing an AlN inversion layer on the open areas; removing any remaining mask; and depositing a III-N epitaxial layer to simultaneously produce N-polar material and III-polar material. Also disclosed herein is: depositing an AlN inversion layer on an N-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce III-polar material. Also disclosed herein is: depositing an inversion layer on a III-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce N-polar material. Also disclosed herein is a composition having: a bulk III-N substrate; an inversion layer on portions of the substrate; and a III-N epitaxial layer on the inversion layer. The III-N epitaxial layer is of the opposite polarity of the surface of the substrate.
    Type: Grant
    Filed: September 19, 2011
    Date of Patent: July 19, 2016
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Jennifer K. Hite, Francis J. Kub, Charles R. Eddy, Jr., Nelson Garces
  • Publication number: 20160120472
    Abstract: An implantable device includes a circuit protected with a low dissolution rate layer, wherein the circuit is either (a) fully encapsulated by the low dissolution rate layer and configured for non-electrical conduction contact sensing (e.g., capacitive sensing) or (b) partially encapsulated by the low dissolution rate layer with an electrode at least partially exposed outside the layer; wherein the implantable device is suitable for implantation inside the body of a living animal; and wherein the low dissolution rate layer comprises an element selected from the group consisting of gallium, boron, nitrogen, oxygen, zirconium, aluminum, and titanium. Such devices can be made by lithographic and other means, with coating layers applied by atomic layer deposition.
    Type: Application
    Filed: October 30, 2015
    Publication date: May 5, 2016
    Inventors: Francis J. Kub, Charles R. Eddy, JR., Virginia D. Wheeler
  • Publication number: 20150362374
    Abstract: This disclosure describes a microbolometer sensor element and microbolometer array imaging devices optimized for infrared radiation detection that are enabled using atomic layer deposition (ALD) of vanadium oxide material layer (VOx) for a temperature sensitive resistor.
    Type: Application
    Filed: June 3, 2015
    Publication date: December 17, 2015
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Virginia D. Wheeler, Francis J. Kub, Charles R. Eddy, JR., Marko J. Tadjer
  • Publication number: 20150362763
    Abstract: A smart window comprising a transparent substrate, a transparent low emittance layer on the transparent substrate, a variable emittance material layer on the substrate or transparent low emittance layer, and a protection material layer on the variable emittance material layer.
    Type: Application
    Filed: June 4, 2015
    Publication date: December 17, 2015
    Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
    Inventors: Virginia D. Wheeler, Francis J. Kub, Charles R. Eddy, JR., Marko J. Tadjer
  • Patent number: 9117736
    Abstract: A structure having: a substrate and a diamond layer on the substrate having diamond nanoparticles. The diamond nanoparticles are formed by colliding diamond particles with the substrate. A method of: directing an aerosol of submicron diamond particles toward a substrate, and forming on the substrate a diamond layer of diamond nanoparticles formed by the diamond particles colliding with the substrate.
    Type: Grant
    Filed: May 21, 2013
    Date of Patent: August 25, 2015
    Assignee: The United States of America, as represented by the Secretary of the Navy
    Inventors: Francis J. Kub, Charles R. Eddy, Jr., Boris N. Feygelson, Scooter Johnson