Abstract: A method to form transistor contacts begins with providing a transistor that includes a gate stack and first and second diffusion regions formed on a substrate, and a dielectric layer formed atop the gate stack and the diffusion regions. A first photolithography process forms first and second diffusion trench openings for the first and second diffusion regions. A sacrificial layer is then deposited into the first and second diffusion trench openings. Next, a second photolithography process forms a gate stack trench opening for the gate stack and a local interconnect trench opening coupling the gate stack trench opening to the first diffusion trench opening. The second photolithography process is carried out independent of the first photolithography process. The sacrificial layer is then removed and a metallization process is carried out to fill the first and second diffusion trench openings, the gate stack trench opening, and the local interconnect trench opening with a metal layer.

Abstract: Cross-shaped sub-resolution assist features may be utilized to print lithographic patterns in semiconductor fabrication processes. The crosses may be isolated structures or may be part of a grid arrangement. The main features, such as contacts, may be positioned on the mask so as to be intersected by the cross-shaped sub-resolution assist features. In some embodiments, the cross-shaped sub-resolution assist features may intersect the main feature at its center point in both the x and y directions.

Abstract: Sub-resolution assist features for non-collinear features are described for use in photolithography. A photolithography mask with elongated features is synthesized. An end-to-end gap between two features if found for which the ends of the two features facing the gap are linearly offset from one another. A sub-resolution assist feature is applied to the end-to-end gap between the elongated features, and the synthesized photolithography mask is modified to include the sub-resolution assist feature.

Abstract: Sub-resolution assist features with trim ends are described for use in photolithography. A photolithography mask with elongated features is synthesized. A sub-resolution assist feature is applied to an end-to-end gap between the elongated features. Trim is applied to the ends of the sub-resolution assist feature, the trim connecting the sub-resolution assist feature to an end of a main feature, the trim having a narrower width than the remaining portion of the sub-resolution assist feature and the synthesized photolithography mask is modified to include the sub-resolution assist feature and trim.

Abstract: The invention is directed to a ventilation control system for controlling the ventilation of a patient. The ventilation control system utilizes a user-friendly user interface for the display of patient data and ventilator status, as well as for entering values for ventilation settings to be used to control the ventilator.

Abstract: The invention is directed to a ventilation control system for controlling the ventilation of a patient. The ventilation control system utilizes a user-friendly user interface for the display of patient data and ventilator status. The user interface includes a graphic representation of a breath cycle that displays the breath cycle currently being ventilated, and is also responsive to changes in ventilation settings to assist the user in evaluation the effect of those changes on the ventilator strategy before the changes are implemented.

Abstract: Systems and techniques relating to the layout and use of sub-resolution assist features. In one implementation, a mask includes a first feature and a second feature separated from each other by a gap and a sub-resolution assist feature bridging the gap between the first feature and the second feature.

Abstract: A batting tee in which the mount for the ball is positioned lower than the other components of the batting tee to encourage a level swing at the ball and to protect the mount from damage from the impact of a bat. The batting tee includes a base, an upright, and a swing arm, the mount for the ball being integral with the end of the swing arm opposite the end mounted to the upright. The swing arm is preferably pivotally and telescopically received in the upright so that the position of the ball can be varied.

Abstract: A self-interlocking standing seam for a building panel. The panel includes a male element on one lateral edge and a female element on the other lateral edge. The male element is wedged into a channel on the female element and is locked in place by a skirt on the female element. A hermaphroditic fastener element is interposed between the interlocked panels and is secured to a building element, such as a purlin.

Abstract: A self-interlocking standing seam for a building panel. The panel includes a male element on one lateral edge and a female element on the other lateral edge. The male element is wedged into a channel on the female element and is locked in place by a skirt on the female element. A fastener can be located on the panel lateral edge having either the male or female element thereon for securing the panel to a building element, such as a purlin.