Patents by Inventor Che-Hung Huang

Che-Hung Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240194486
    Abstract: A method for forming a packaged integrated circuit device includes providing a semiconductor wafer having a plurality of integrated circuit devices, each integrated circuit device extending into the semiconductor wafer to a first depth, and grinding a backside of the silicon wafer to no more than the first depth. The method further includes forming a backside cut between the integrated circuit devices. The backside cut extends to within the first depth, but the backside cut does not extend completely through the semiconductor wafer. The backside cut exposes a plurality of edges of each of the integrated circuit devices. The method further includes depositing, on the backside of the wafer, a metallization layer on a bottom surface of the integrated circuit devices and on the edges.
    Type: Application
    Filed: February 19, 2024
    Publication date: June 13, 2024
    Inventors: Kuan-Hsiang Mao, Wen Hung Huang, Che Ming Fang, Yufu Liu
  • Publication number: 20240136423
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.
    Type: Application
    Filed: December 25, 2023
    Publication date: April 25, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ming Chang, Che-Hung Huang, Wen-Jung Liao, Chun-Liang Hou
  • Publication number: 20240128353
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.
    Type: Application
    Filed: December 25, 2023
    Publication date: April 18, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ming Chang, Che-Hung Huang, Wen-Jung Liao, Chun-Liang Hou
  • Publication number: 20240096861
    Abstract: A semiconductor package assembly is provided. The semiconductor package assembly includes first semiconductor die, a second semiconductor die and a memory package. The first semiconductor die and the second semiconductor die are stacked on each other. The first semiconductor die includes a first interface and a third interface. The first interface overlaps and is electrically connected to the second interface arranged on the second semiconductor die. The third interface is arranged on a first edge of the first semiconductor die. The memory package is disposed beside the first semiconductor die, wherein the memory package is electrically connected to the first semiconductor die by the third interface.
    Type: Application
    Filed: August 23, 2023
    Publication date: March 21, 2024
    Inventors: Che-Hung KUO, Hsiao-Yun CHEN, Wen-Pin CHU, Chun-Hsiang HUANG
  • Patent number: 11935753
    Abstract: A method for forming a packaged integrated circuit device includes providing a semiconductor wafer having a plurality of integrated circuit devices, each integrated circuit device extending into the semiconductor wafer to a first depth, and grinding a backside of the silicon wafer to no more than the first depth. The method further includes forming a backside cut between the integrated circuit devices. The backside cut extends to within the first depth, but the backside cut does not extend completely through the semiconductor wafer. The backside cut exposes a plurality of edges of each of the integrated circuit devices. The method further includes depositing, on the backside of the wafer, a metallization layer on a bottom surface of the integrated circuit devices and on the edges.
    Type: Grant
    Filed: December 9, 2021
    Date of Patent: March 19, 2024
    Assignee: NXP B.V
    Inventors: Kuan-Hsiang Mao, Wen Hung Huang, Che Ming Fang, Yufu Liu
  • Patent number: 11894441
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.
    Type: Grant
    Filed: May 16, 2022
    Date of Patent: February 6, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ming Chang, Che-Hung Huang, Wen-Jung Liao, Chun-Liang Hou
  • Publication number: 20230378314
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.
    Type: Application
    Filed: July 13, 2023
    Publication date: November 23, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Bo-Rong Chen, Che-Hung Huang, Chun-Ming Chang, Yi-Shan Hsu, Chih-Tung Yeh, Shin-Chuan Huang, Wen-Jung Liao, Chun-Liang Hou
  • Publication number: 20230369448
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.
    Type: Application
    Filed: July 13, 2023
    Publication date: November 16, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Bo-Rong Chen, Che-Hung Huang, Chun-Ming Chang, Yi-Shan Hsu, Chih-Tung Yeh, Shin-Chuan Huang, Wen-Jung Liao, Chun-Liang Hou
  • Publication number: 20230335614
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a second barrier layer on the first barrier layer; forming a first hard mask on the second barrier layer; removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.
    Type: Application
    Filed: June 28, 2023
    Publication date: October 19, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ming Chang, Che-Hung Huang, Wen-Jung Liao, Chun-Liang Hou, Chih-Tung Yeh
  • Patent number: 11749740
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.
    Type: Grant
    Filed: December 31, 2019
    Date of Patent: September 5, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Bo-Rong Chen, Che-Hung Huang, Chun-Ming Chang, Yi-Shan Hsu, Chih-Tung Yeh, Shin-Chuan Huang, Wen-Jung Liao, Chun-Liang Hou
  • Patent number: 11735644
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a second barrier layer on the first barrier layer; forming a first hard mask on the second barrier layer; removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.
    Type: Grant
    Filed: December 14, 2021
    Date of Patent: August 22, 2023
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ming Chang, Che-Hung Huang, Wen-Jung Liao, Chun-Liang Hou, Chih-Tung Yeh
  • Patent number: 11665888
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a semiconductor layer on a substrate; removing part of the semiconductor layer and part of the substrate to form a trench; forming a liner in the trench; removing part of the liner to form a spacer adjacent to two sides of the trench; forming a conductive layer in the trench; forming a metal layer on the conductive layer; forming a mask layer on the metal layer; and patterning the mask layer, the metal layer, and the conductive layer to form a bit line structure.
    Type: Grant
    Filed: December 25, 2020
    Date of Patent: May 30, 2023
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Wei-Lun Hsu, Hung-Lin Shih, Che-Hung Huang, Ping-Cheng Hsu, Hsu-Yang Wang
  • Patent number: 11573590
    Abstract: A button structure includes a first component, a second component, and a pressing element mounted on the second component. The first component has a first base portion. The first base portion protrudes outward to form at least one first extending portion. The at least one first extending portion protrudes inward to form a limiting portion. The second component has a second base portion. The second base portion protrudes rearward to form at least one second extending portion. The at least one first extending portion and the at least one second extending portion are connected by a pivoting assembly. The at least one second extending portion protrudes rearward to form a blocking portion. When the blocking portion is pivoted on the first component, the blocking portion is alternatively located to a bottom of the limiting portion and a top of the limiting portion.
    Type: Grant
    Filed: May 15, 2022
    Date of Patent: February 7, 2023
    Assignee: CHENG UEI PRECISION INDUSTRY CO., LTD.
    Inventor: Che-Hung Huang
  • Publication number: 20230030145
    Abstract: A button structure includes a first component, a second component, and a pressing element mounted on the second component. The first component has a first base portion. The first base portion protrudes outward to form at least one first extending portion. The at least one first extending portion protrudes inward to form a limiting portion. The second component has a second base portion. The second base portion protrudes rearward to form at least one second extending portion. The at least one first extending portion and the at least one second extending portion are connected by a pivoting assembly. The at least one second extending portion protrudes rearward to form a blocking portion. When the blocking portion is pivoted on the first component, the blocking portion is alternatively located to a bottom of the limiting portion and a top of the limiting portion.
    Type: Application
    Filed: May 15, 2022
    Publication date: February 2, 2023
    Inventor: CHE-HUNG HUANG
  • Publication number: 20220278222
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.
    Type: Application
    Filed: May 16, 2022
    Publication date: September 1, 2022
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ming Chang, Che-Hung Huang, Wen-Jung Liao, Chun-Liang Hou
  • Publication number: 20220278223
    Abstract: A high electron mobility transistor (HEMT) includes a buffer layer on a substrate, a barrier layer on the buffer layer, a p-type semiconductor layer on the buffer layer, a gate electrode on the p-type semiconductor layer, a source electrode and a drain electrode adjacent to two sides of the gate electrode on the barrier layer, a hard mask on the barrier layer and around the p-type semiconductor layer, the source electrode, and the drain electrode, and a passivation layer on the hard mask.
    Type: Application
    Filed: May 16, 2022
    Publication date: September 1, 2022
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ming Chang, Che-Hung Huang, Wen-Jung Liao, Chun-Liang Hou
  • Patent number: 11367779
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.
    Type: Grant
    Filed: October 29, 2019
    Date of Patent: June 21, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ming Chang, Che-Hung Huang, Wen-Jung Liao, Chun-Liang Hou
  • Publication number: 20220109058
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a second barrier layer on the first barrier layer; forming a first hard mask on the second barrier layer; removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.
    Type: Application
    Filed: December 14, 2021
    Publication date: April 7, 2022
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ming Chang, Che-Hung Huang, Wen-Jung Liao, Chun-Liang Hou, Chih-Tung Yeh
  • Patent number: 11239338
    Abstract: According to an embodiment of the present invention, a method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a second barrier layer on the first barrier layer; forming a first hard mask on the second barrier layer; removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.
    Type: Grant
    Filed: October 29, 2019
    Date of Patent: February 1, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Ming Chang, Che-Hung Huang, Wen-Jung Liao, Chun-Liang Hou, Chih-Tung Yeh
  • Publication number: 20210175343
    Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a first barrier layer on a substrate; forming a p-type semiconductor layer on the first barrier layer; forming a hard mask on the p-type semiconductor layer; patterning the hard mask and the p-type semiconductor layer; and forming a spacer adjacent to the hard mask and the p-type semiconductor layer.
    Type: Application
    Filed: December 31, 2019
    Publication date: June 10, 2021
    Inventors: Bo-Rong Chen, Che-Hung Huang, Chun-Ming Chang, Yi-Shan Hsu, Chih-Tung Yeh, Shin-Chuan Huang, Wen-Jung Liao, Chun-Liang Hou