Abstract: A self-refresh device, adopted in a memory array including a plurality of memory cells, includes a first word-line selecting module, which is enabled according to a first main-word-line signal, and a self-refresh controller. The first word-line selecting module includes a first selecting device, which selects a first word line according to a first word-line driving signal, and a second selecting device, which selects a second word line according to a second word-line driving signal. The self-refresh controller generates the first word-line driving signal, the second word-line driving signal, and the first main word-line signal to select one of the memory cells corresponding to the selected one of the first word line and the second word line for self-refreshing. When the first word line switches to the second word line, the self-refresh controller maintains the first main word-line signal at the same logic level.

Abstract: A self-refresh device, adopted in a memory array including a plurality of memory cells, includes a first word-line selecting module, which is enabled according to a first main-word-line signal, and a self-refresh controller. The first word-line selecting module includes a first selecting device, which selects a first word line according to a first word-line driving signal, and a second selecting device, which selects a second word line according to a second word-line driving signal. The self-refresh controller generates the first word-line driving signal, the second word-line driving signal, and the first main word-line signal to select one of the memory cells corresponding to the selected one of the first word line and the second word line for self-refreshing. When the first word line switches to the second word line, the self-refresh controller maintains the first main word-line signal at the same logic level.

Abstract: A photodiode structure includes a photodiode and a concave reflector disposed below the photodiode. The concave reflector is arranged to reflect incident light from above back toward the photodiode.

Abstract: A family of phase change materials GewSbxTeyNz having a crystallization temperature greater than 410° C., wherein a Ge atomic concentration is within a range from 43% to 54%, a Sb atomic concentration is within a range from 6% to 13%, a Te atomic concentration is within a range from 14% to 23%, and a N atomic concentration is within a range of 15% to 27%, is described. A method for programming a memory device including such phase change materials is also described.

Abstract: The present disclosure provides an integrated circuit device comprising a substrate having a back surface and a sensing region disposed in the substrate and being operable to sense radiation projected towards the back surface of the substrate. The device further includes a waveguide disposed over the back surface of the substrate. The waveguide is aligned with the sensing region such that the waveguide is operable to transmit the radiation towards the aligned sensing region. The waveguide includes a waveguide wall, and an inner region disposed adjacent to the waveguide wall. A diffractive index of the waveguide wall is less than a diffractive index of the inner region.

Abstract: A phosphor material manufacturing method includes: prefabricating a LaPO4:Tm+ solution or a LaPO4:Eu+ solution in nitric acid; adding a carbon nano-sized material to the LaPO4:Tm+ solution or the LaPO4:Eu3+ solution for mixing to obtain a mixed solution precursors; precipitating the mixed solution and separating a precipitation substance from the mixed solution; drying and grinding the precipitation substance to obtain a powder material; the powder material with a predetermined temperature to form a sintered LaPO4:Tm+ phosphor material or a sintered LaPO4:Eu+ phosphor material. Advantageously, the sintered LaPO4:Tm+ phosphor material or the sintered LaPO4:Eu+ phosphor material is coated by the carbon nano-sized material for enhancing the efficiency of energy transfer and luminance of the phosphor material.

Abstract: This invention discloses an apparatus capable of controlling, tracking and measuring the tightening torque and the locking force and a method thereof. The device comprises a control device, a transducing device, and a sensing device. The transducing device comprises a second connector and a first signal transmitter. The control device communicates with the transducing device through a second signal transmitter and the first signal transmitter wiredly or wirelessly. The sensing device comprises a first connector and a sensor, and electrically connects to the transducing device through the second connector and the first connector. The sensing device senses the torque applied to a fastener to transmit real-time sensing data to the control device. The control device compares the real-time sensing data with a setting value so as to measure, control or track the locking force or tightening torque applied to the fastener in real time.

Abstract: The present disclosure provides an integrated circuit device comprising a substrate having a back surface and a sensing region disposed in the substrate and being operable to sense radiation projected towards the back surface of the substrate. The device further includes a waveguide disposed over the back surface of the substrate. The waveguide is aligned with the sensing region such that the waveguide is operable to transmit the radiation towards the aligned sensing region. The waveguide includes a waveguide wall, and an inner region disposed adjacent to the waveguide wall. A diffractive index of the waveguide wall is less than a diffractive index of the inner region.

Abstract: A family of phase change materials GewSbxTeyNz having a crystallization temperature greater than 410° C., wherein a Ge atomic concentration is within a range from 43% to 54%, a Sb atomic concentration is within a range from 6% to 13%, a Te atomic concentration is within a range from 14% to 23%, and a N atomic concentration is within a range of 15% to 27%, is described. A method for programming a memory device including such phase change materials is also described.

Abstract: A photodiode structure includes a photodiode and a concave reflector disposed below the photodiode. The concave reflector is arranged to reflect incident light from above back toward the photodiode.

Abstract: Among other things, one or more image sensors and techniques for forming such image sensors are provided. An image sensor comprises a photodiode array configured to detect light. The image sensor comprises a calibration region configured to detect a color level for image reproduction, such as a black calibration region configured to detect a black level for an image detected by the photodiode array. The image sensor comprises a dielectric film that is formed over the photodiode array and the calibration region. The dielectric film is configured to balance stress between the photodiode and the calibration region in order to improve accuracy of the calibration region.

Abstract: A photodiode structure includes a photodiode and a concave reflector disposed below the photodiode. The concave reflector is arranged to reflect incident light from above back toward the photodiode.

Abstract: An embodiment image sensor includes a pixel region spaced apart from a black level control (BLC) region by a buffer region. In an embodiment, a light shield is disposed over the BLC region and extends into the buffer region. In an embodiment, the buffer region includes an array of dummy pixels. Such embodiments effectively reduce light cross talk at the edge of the BLC region, which permits more accurate black level calibration. Thus, the image sensor is capable of producing higher quality images.

Abstract: A protecting circuit for reducing leakage currents comprises a first PMOS transistor (P-channel Metal-Oxide-Semiconductor Field-Effect Transistor), a second PMOS transistor, a first NMOS transistor (N-channel Metal-Oxide-Semiconductor Field-Effect Transistor), and a second NMOS transistor. The first PMOS transistor is coupled between a first voltage node and a node, and comprises a first gate coupled an input node. The second PMOS transistor is coupled between the node and an output node. The first NMOS transistor is coupled between the output node and a ground node, and comprises a third gate coupled to the input node. The second NMOS transistor is coupled between the input node and a second gate of the second PMOS transistor, and comprises a fourth gate coupled to a second voltage node.

Abstract: A protecting circuit for reducing leakage currents comprises a first PMOS transistor (P-channel Metal-Oxide-Semiconductor Field-Effect Transistor), a second PMOS transistor, a first NMOS transistor (N-channel Metal-Oxide-Semiconductor Field-Effect Transistor), and a second NMOS transistor. The first PMOS transistor is coupled between a first voltage node and a node, and comprises a first gate coupled an input node. The second PMOS transistor is coupled between the node and an output node. The first NMOS transistor is coupled between the output node and a ground node, and comprises a third gate coupled to the input node. The second NMOS transistor is coupled between the input node and a second gate of the second PMOS transistor, and comprises a fourth gate coupled to a second voltage node.

Abstract: The present invention discloses a torque display system and a method thereof. This system comprises an input unit, an operation unit, a memory unit, a display unit and a warning unit. The input unit is used to receive a torque signal sensed by the torque tool with or without a torque multiplier and receive a magnification parameter value inputted by the user according to the torque multiplier selected. The operation unit is used to compute a magnified torque value according to the torque signal and magnification parameter value. The display unit is used to display the preset torque value, the magnified torque value and the magnification parameter value inputted. The warning unit is used to alert the user that the preset torque value is reached and the computation of the magnified torque value is completed. The memory unit is used to save magnification parameter values of several torque multipliers.

Abstract: A fuse detecting apparatus includes a detector, a calibrator and a logical operating unit. The detector includes a detecting switch module and a detecting latch. The detecting switch module generates an initial detecting result according to first and second control signals and a status of the fuse. The detecting latch stores a voltage level of the initial detecting result or maintains its originally stored voltage level according to the initial detecting result for generating a pre-calibrating detecting signal. The calibrator includes a calibrating switch module and a calibrating latch. The calibrating switch module generates a calibrating result according to the first and second control signals. The calibrating latch stores the calibrating result and generates a calibrating signal accordingly. The logical operating unit generates a calibrated detecting signal according to the pre-calibrating detecting signal and the calibrating signal.

Abstract: This invention discloses an apparatus capable of controlling, tracking and measuring the tightening torque and the locking force and a method thereof. The device comprises a control device, a transducing device, and a sensing device. The transducing device comprises a second connector and a first signal transmitter. The control device communicates with the transducing device through a second signal transmitter and the first signal transmitter wiredly or wirelessly. The sensing device comprises a first connector and a sensor, and electrically connects to the transducing device through the second connector and the first connector. The sensing device senses the torque applied to a fastener to transmit real-time sensing data to the control device. The control device compares the real-time sensing data with a setting value so as to measure, control or track the locking force or tightening torque applied to the fastener in real time.

Abstract: A passive current balance driving apparatus including first and second drivers is provided. The first driver includes a first balance-capacitor having a first terminal coupled to a first terminal of an AC signal source and a second terminal providing a first balance AC-voltage; and a first rectification unit rectifying the first balance AC-voltage to output a first DC-voltage to drive a first LED string with multi-LEDs connected in series. The second driver includes a second balance-capacitor having a first terminal coupled to a first terminal of the AC signal source and a second terminal providing a second balance AC-voltage; and a second rectification unit rectifying the second balance AC-voltage to output a second DC-voltage to drive a second LED string with multi-LEDs connected in series. The capacitive reactances of these two balance-capacitors are the same and respectively greater than the total internal resistances of the first and second LED strings.

Abstract: A fuse detecting apparatus including a detector, a calibrator and a logical operating unit is disclosed. The detector includes a detecting switch module and a detecting latch. The detecting switch module generates an initial detecting result according to a first and a second control signals and a status of the fuse. The detecting latch stores a voltage level of the initial detecting result or maintains its originally stored voltage level according to the initial detecting result for generating a pre-calibrating detecting signal. The calibrator includes a calibrating switch module and a calibrating latch. The calibrating switch module generates a calibrating result according to the first and the second control signals. The calibrating latch stores the calibrating result and generates a calibrating signal accordingly. The logical operating unit generates a calibrated detecting signal according to the pre-calibrating detecting signal and the calibrating signal.