Abstract: Disclosed are systems, devices, modules, methods, and other implementations, including a method for digital predistortion that includes receiving, by a digital predistorter, a first signal that depends on amplitude variations based on an input signal, u, with the variations of the first signal corresponding to time variations in non-linear characteristics of a transmit chain that includes a power amplifier. The method further includes receiving, by the digital predistorter, the input signal u, generating, by the digital predistorter, based at least in part on signals comprising the input signal u and the first signal, a digitally predistorted signal v to mitigate the non-linear behavior of the transmit chain, and providing the predistorted signal v to the transmit chain.

Abstract: Disclosed herein are methods for detecting methylation in cell-free polynucleotides and methods for detecting the presence of cancer in a subject.

Abstract: An adjustable voltage regulator circuit, including a voltage conversion circuit, a voltage conversion controller, and a clock generator, is provided. The voltage conversion circuit receives an input voltage to generate an output voltage. The voltage conversion controller detects the output voltage, compares the output voltage with a reference voltage value, and outputs an enable signal based on a comparison result to control the voltage conversion circuit to adjust the output voltage. The clock generator generates a first clock signal and a second clock signal to respectively drive the voltage conversion circuit and the voltage conversion controller. The voltage conversion controller adjusts the enable signal to gradually adjust the output voltage to a predetermined voltage range.

Abstract: Aspects of the disclosure relate to determining a sign type of an unfamiliar sign. The system may include one or more processors. The one or more processors may be configured to receive an image and identify image data corresponding to a traffic sign in the image. The image data corresponding to the traffic sign may be input in a sign type model. The processors may determine that the sign type model was unable to identify a type of the traffic sign and determine one or more attributes of the traffic sign. The one or more attributes of the traffic sign may be compared to known attributes of other traffic signs and based on this comparison, a sign type of the traffic sign may be determined. The vehicle may be controlled in an autonomous driving mode based on the sign type of the traffic sign.

Abstract: A semiconductor structure is provided. At least one first well region is disposed in a semiconductor substrate and has a first conductivity type. At least one gate of a transistor is disposed over the first well region and extends in a first direction. At least one second well region and at least one third well region are disposed on opposite sides of the first well region and extend in the first direction. The second and third well regions have a second conductivity type. A first shielding structure is disposed on at least one end of the gate and partially overlaps the first well region in a vertical projection direction. The first shielding structure is separated from the end of the gate. A bulk ring is disposed in the semiconductor substrate and surrounds the gate, the second well region, the third well region, and the first shielding structure.

Abstract: A disclosed system is configured to bond a chip to a substrate and includes a chip processing subsystem that is configured to receive the chip and to expose the chip to a first plasma, and a substrate processing subsystem that is configured to receive the substrate and to expose the substrate to a second plasma. The system further includes a bonding subsystem that is configured to align the chip with the substrate, to force the chip and the substrate into direct mechanical contact with one another by application of a compressive force, and to apply heat to at least one of the chip or the substrate. Application of the compressive force and the heat thereby bonds the chip to the substrate. The first and second plasmas may include H2/N2, H2/Ar, H2/He, NH3/N2, NH3/Ar, or NH3/He and the chip and substrate may be maintained in a low oxygen environment.

Abstract: A biaxially oriented polyester film having the following physical property is provided: when cooled from the molten state at a cooling rate of 20° C./min, an observed recrystallization temperature is 175° C.-200° C. The biaxially oriented polyester film is formed by a thick sheet before bidirectional stretching that is melted and extruded by an extruder and then cooled and formed on a casting roll. The thick sheet before stretching having the following physical property as analyzed by differential scanning calorimetry: a crystallization rate is less than 10%.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a silicon layer on a substrate and then forming a metal silicon nitride layer on the silicon layer, in which the metal silicon nitride layer includes a bottom portion, a middle portion, and a top portion and a concentration of silicon in the top portion is greater than a concentration of silicon in the middle portion. Next, a conductive layer is formed on the metal silicon nitride layer and the conductive layer, the metal silicon nitride layer, and the silicon layer are patterned to form a gate structure.

Abstract: The present application relates to an off-axis two-mirror infrared imaging system including a primary reflecting mirror and a secondary reflecting mirror. The primary reflecting mirror is located on the incident light path of an incident infrared light beam and reflects the incident infrared light beam to form a first reflected light beam. The secondary reflecting mirror is located on the reflection light path of the primary reflecting mirror, and is used to reflect the first reflected light beam to form a second reflected light beam. The second reflected light beam reaches an image surface after passing through the incident infrared light beam. The reflective surfaces of the primary reflecting mirror and the secondary reflecting mirror are freeform surfaces. The secondary reflecting mirror and the image plane are respectively located on both sides of the incident infrared light beam.

Abstract: A semiconductor device structure and a method for forming the same are provided. The semiconductor device structure includes a gate electrode layer formed over a semiconductor substrate and capped with a conductive capping layer. The semiconductor device structure also includes an insulating capping stack having a lower surface that faces and is spaced apart from an upper surface of the conductive capping layer. In addition, the semiconductor device structure includes gate spacers formed over the semiconductor substrate and covering opposing sidewalls of the gate electrode layer, the conductive capping layer, and the insulating capping stack.

Abstract: Provided is a method of reducing a behavioral abnormality associated with a neurodevelopmental disorder in a subject, including administering to the subject an effective amount of Lactobacillus plantarum subsp. plantarum PS128. Also provided is a composition for preventing or treating a behavioral abnormality associated with a neurodevelopmental disorder in a subject in need thereof.

Abstract: Provided are compositions and methods useful in etching, i.e., removing amorphous carbon hard masks which have been doped with elements such as boron, chlorine, or nitrogen. The compositions utilize concentrated sulfuric acid, water, and at least one oxidizing agent. In the operation of the method, the composition selectively removes the doped hard mask layer, even in the presence of layers such as silicon dioxide, silicon nitride, tantalum nitride, and polysilicon, with good selectivity.

Abstract: A supersaturated solid solution soft magnetic material and a preparation method thereof are provided, belonging to the field of metal soft magnetic technologies. The supersaturated solid solution soft magnetic material is soft magnetic alloy with proportions of 72.0˜78.0 at % Fe, 12.0˜18.0 at % Si, 4.0˜12.0 at % Co and 1.0˜3.0 at % Ti. The preparation method uses molten glass purification or electromagnetic levitation melting to an alloy melt with a target supercooling degree, increases the solid solubility of the Ti element in ?-Fe (Si, Co), and promotes the formation of supersaturated solid solution of Ti, thereby achieving the goal that the magnetocrystalline anisotropy constant and the magnetostriction coefficient tend to be zero. Ti element is uniformly distributed in the ?-Fe (Si, Co) after supercooled solidification analyzed by X-ray energy spectrometer, a supersaturated solid solution alloy without Ti precipitation is obtained, and the soft magnetic alloy has low coercivity and high permeability.

Abstract: Disclosed is a method for classifying hyperspectral images on the basis of an adaptive multi-scale feature extraction model, the method comprising: establishing a framework comprising the two parts of a scale reference network and a feature extraction network, introducing a condition gate mechanism into the scale reference network, performing determination step-by-step by means of three groups of modules, inputting features into a corresponding scale extraction network, deep mining rich information contained in a hyperspectral remote sensing image, effectively combining features of different scales, improving a classification effect, and generating a fine classification result map.

Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for processing data generated by a sensing system that rotationally senses an environment. In one aspect, a method comprises partitioning a predetermined period of time into a plurality of sub-periods, wherein the predetermined period of time is a period of time for which data generated by the sensing system constitutes a complete rotational sensing of the environment; for each sub-period: receiving current data generated by the sensing system during the sub-period and characterizing a respective partial scene of the environment; processing the current data using an object detection neural network to generate a current object detection output that is specific to the respective partial scene of the environment.

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

Abstract: A method for forming a semiconductor device structure includes forming first nanostructures and second nanostructures over a substrate. The method also includes forming a first metal gate layer surrounding the first nanostructures and over the first nanostructures and the second nanostructures. The method also includes etching back the first metal gate layer over the first nanostructures and the second nanostructures. The method also includes removing the first metal gate layer over the second nanostructures. The method also includes forming a second metal gate layer surrounding the second nanostructures and over the first nanostructures and the second nanostructures.

Abstract: A method for improving the corrosion resistance of NdFeB materials is provided. The method includes in-situ growing a layer of oxide, nitride, or oxynitride on the surface of NdFeB magnet correspondingly by performing at least one of an oxidation treatment and a nitridation treatment at low temperature in a range of 200˜400° C., thereby significantly improving the corrosion resistance of the magnet. The method is simple to operate, low-cost, green, safe, and efficient. Depending on the parameters of the low-temperature oxidation and/or nitridation treatment, the thickness of the oxide, nitride, or oxynitride layer is adjustable from 10 nm to 100 ?m, which can improve the corrosion resistance of the magnet while maintaining excellent magnetic properties. Moreover, the thin surface layer is in-situ grown on the NdFeB substrate, which is strong and stable over a long service period and can be applied for mass production.

Abstract: A hub motor for a pedelec includes a hub housing, a shaft module, a stator unit including a control circuit board, a rotor unit, a freehub module, and a signal wire. The shaft module includes a shaft tube and a casing tube fitting around the shaft tube. The shaft tube has an inner circumference and an outer circumference, which are opposite, the inner circumference encircles to form a perforation. A groove is formed by recessing into the outer circumference. The casing tube fits around the shaft tube to cover the groove, thereby forming a wiring space. The freehub module includes a freehub body for sensing a rotational speed of the hub housing and an output portion electrically connected to the freehub body. The signal wire passes and is restricted in the wiring space, which prevents the signal wire from being torn. An end of the signal wire is electrically connected to the output portion, and the other end is electrically connected to the control circuit board.