Abstract: Embodiments provide a dielectric inter block disposed in a metallic region of a conductive line or source/drain contact. A first and second conductive structure over the metallic region may extend into the metallic region on either side of the inter block. The inter block can prevent etchant or cleaning solution from contacting an interface between the first conductive structure and the metallic region.

Abstract: Improved conductive contacts, methods for forming the same, and semiconductor devices including the same are disclosed. In an embodiment, a semiconductor device includes a first interlayer dielectric (ILD) layer over a transistor structure; a first contact extending through the first ILD layer, the first contact being electrically coupled with a first source/drain region of the transistor structure, a top surface of the first contact being convex, and the top surface of the first contact being disposed below a top surface of the first ILD layer; a second ILD layer over the first ILD layer and the first contact; and a second contact extending through the second ILD layer, the second contact being electrically coupled with the first contact.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate, active devices and transparent conductive patterns. The active devices are formed on the semiconductor substrate. The transparent conductive patterns are formed over the active devices and electrically connected to the active devices. The transparent conductive patterns are made of a metal oxide material. The metal oxide material has a first crystalline phase with a prefer growth plane rich in oxygen vacancy, and has a second crystalline phase with a prefer growth plane poor in oxygen vacancy.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate having a surface. The semiconductor device includes a conductive pad over a portion of the surface. The conductive pad has a curved top surface, and a width of the conductive pad increases toward the substrate. The semiconductor device includes a device over the conductive pad. The semiconductor device includes a solder layer between the device and the conductive pad. The solder layer covers the curved top surface of the conductive pad, and the conductive pad extends into the solder layer.

Abstract: A method includes forming a first package component, which formation process includes forming a first plurality of openings in a first dielectric layer, depositing a first metallic material into the first plurality of openings, performing a planarization process on the first metallic material and the first dielectric layer to form a plurality of metal pads in the first dielectric layer, and selectively depositing a second metallic material on the plurality of metal pads to form a plurality of bond pads. The first plurality of bond pads comprise the plurality of metal pads and corresponding parts of the second metallic material. The first package component is bonded to a second package component.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first fin structure. The semiconductor device structure includes a first source/drain structure over the first fin structure. The semiconductor device structure includes a first dielectric layer over the first source/drain structure and the substrate. The semiconductor device structure includes a first conductive contact structure in the first dielectric layer and over the first source/drain structure. The semiconductor device structure includes a second dielectric layer over the first dielectric layer and the first conductive contact structure. The semiconductor device structure includes a first conductive via structure passing through the second dielectric layer and connected to the first conductive contact structure. A first width direction of the first conductive contact structure is substantially parallel to a second width direction of the first conductive via structure.

Abstract: Disclosed is a method for manufacturing a reinforced synthetic product with a curved geometry, which includes forming a fabric made of at least one filament bundle including a reinforcing fiber material and at least one thermoplastic filament woven with the filament bundle; and combining a heat-formable material with the fabric to form a bendable fabric preform sheet. Also disclosed is a method for manufacturing a reinforced synthetic product with a curved geometry, which includes positioning the bendable fabric preform sheet into a mold with a curved geometry to form a bended fabric preform sheet; and molding the bended fabric preform sheet by heating to form a cured product.

Abstract: A hydroponic tray for agricultural use. More particularly, the hydroponic tray allows control on fluid flowing there through. The tray includes an inlet end for the ingress of fluid and an outlet end for the egress of fluid, a trough extending continuously between the inlet end and the outlet end along which, in use, the fluid flows, and at least one fluid regulator device extending transversely across the trough, wherein each fluid regulator device comprises a sluice panel adapted to allow a predetermined rate of fluid flow there through and a control panel moveable relative to the sluice panel to vary the rate of fluid flow through the fluid regulator.

Abstract: A MEMS device includes a first multi-layer structure, a second multi-layer structure over the first multi-layer structure, a first semiconductor layer between the first and second multilayer structures, a first air gap separating the first multi-layer structure and the first semiconductor layer, a second air gap separating the first semiconductor layer and the second multi-layer structure, a plurality of semiconductor pillars, and a plurality of second semiconductor pillars. The first semiconductor pillars are exposed to the first air gap, and coupled to the first semiconductor layer and the first multi-layer structure. The second semiconductor pillars are exposed to the second air gap, and coupled to the first semiconductor layer and the second multi-layer structure.

Abstract: A bicycle crank may include a first lug, a second lug and a transition region. The first lug is for connecting a spindle. The second lug is for connecting a pedal. The transition region interconnects the first lug and the second lug, and is formed from a fiber reinforced thermoplastic material that includes a fiber component and a thermoplastic component.

Abstract: A suspension assembly of industrial fans is provided. The suspension assembly of industrial fans includes a suspending main rod and a sub rod. A first adapter is pivotally disposed on a bottom end of the suspension main rod and provided with a plurality of first assembly holes. One end of the sub rod corresponding to the first adapter is pivotally connected with a second adapter which includes second assembly holes corresponding to the first assembly holes. A fan body is installed at the other end of the sub rod. According to environmental requirements and wind field coverage, directions and angles of air flows from the fan body can be changed by adjustment of relative positions of the second assembly holes of the second adapter to the first adapter. Therefore, good air circulation and ventilation in the environment is provided.

Abstract: A method for forming a MEMS device includes following operations. A first semiconductor layer is formed over a substrate. A plurality of first pillars are formed over the first layer. A second layer is formed over the first pillars and the first layer. A plurality of second pillars are formed over the second layer. A third layer is formed over the second pillars and the second layer.

Abstract: A warm-up method for a machine system including a machine component and a machine sensor configured to sense temperature of the machine component is provided. The method comprises steps of; A) activating the machine component to execute a warm-up operation for warming up the machine component; B) determining whether the machine component is warmed up based on a target temperature corresponding to the machine component and a temperature of the machine component that is currently sensed by the machine sensor; and C) when it is determined that the machine component is warmed up, making the machine component not execute the warm-up operation.

Abstract: A process for stamping metallic member with forging thickness of side walls, the process comprising: a forming step by forging, which forms the metallic member by forging; a step for forging thickness of the side walls, which extrudes the side walls of the metallic member to increase thickness of the metallic member; a specular treatment step with diamond cutter, which generates metallic texture of the side walls of the metallic member; and a finish step for forging thickness of the side walls of the metallic member. Wherein the metallic member, for example, is a sheet stamping component.

Abstract: A micro electro mechanical system (MEMS) microphone includes a first membrane, a second membrane, a third membrane disposed between the first membrane and the second membrane, a first cavity disposed between the first membrane and the third membrane and surrounded by a first wall, a second cavity disposed between the second membrane and the third membrane and surrounded by a second wall, and one or more first supports disposed in the first cavity and connecting the first membrane and the third membrane.

Abstract: A sensor device includes a microelectromechanical system (MEMS) force sensor, and a capacitive acceleration sensor. In the method of manufacturing the sensor device, a sensor portion of the MEMS force sensor is prepared over a front surface of a first substrate. The sensor portion includes a piezo-resistive element and a front electrode. A bottom electrode and a first electrode are formed on a back surface of the first substrate. A second substrate having an electrode pad and a second electrode to the bottom of the first substrate are attached such that the bottom electrode is connected to the electrode pad and the first electrode faces the second electrode with a space therebetween.

Abstract: Methods for in situ amplification (ISA) of cfNA, such as cfDNA, in a sample are provided wherein the cfNA in the sample is not subject to a nucleic acid purification step. The methods disclosed may be used to generate an analyzable pool of cfNA present in the sample. The analyzable pool may be used with a variety of analytical techniques to characterize the nucleic acid in the sample. Methods of diagnosis, determining a therapeutic intervention and monitoring of a subject are also provided.

Abstract: A method for forming a MEMS device includes following operations. A first semiconductor layer is formed over a substrate. A plurality of first pillars are formed over the first layer. A second layer is formed over the first pillars and the first layer. A plurality of second pillars are formed over the second layer. A third layer is formed over the second pillars and the second layer.

Abstract: A warm-up method for a machine system including a machine component and a machine sensor configured to sense temperature of the machine component is provided. The method comprises steps of; A) activating the machine component to execute a warm-up operation for warming up the machine component; B) determining whether the machine component is warmed up based on a target temperature corresponding to the machine component and a temperature of the machine component that is currently sensed by the machine sensor; and C) when it is determined that the machine component is warmed up, making the machine component not execute the warm-up operation.