Abstract: In some embodiments, the present disclosure provides an exemplary technically improved system and method for controlling the body movements and facial expressions of a digital character in real time by using: a body-motion capture system comprising a headset configured to be worn on a head of a user and comprising controllers and sensors that can be used to track at least one head or body motion of the user (including arms and hands); and correspondingly control at least one head or body motion (including arms and hands) of a digital character in real time based, at least in part, on the captured motion data; a mobile computing device configured to track and capture facial expression data relating to at least one facial expression of the user, and use at least that data to correspondingly control at least one facial expression of the digital character in real time; a microphone configured to capture an audio output of the user, and control an audio output of the digital character in real-time based, at least

Abstract: A wavelength converting layer is partially diced to generate a first and second wavelength converting layer segment and to allow partial isolation between the first segment and the second segment such that the wavelength converting layer segments are connected by a connecting wavelength converting layer. The first and second wavelength converting layer segments are attached to a first and second light emitting device, respectively to create a first and second pixel. The connecting wavelength converting layer segment is removed to allow complete isolation between the first pixel and the second pixel. An optical isolation material is applied to exposed surfaces of the first and second pixel and a sacrificial portion of the wavelength converting layer segments and optical isolation material attached to the sacrificial portion is removed from a surface facing away from the first light emitting device, to expose a emitting surface of the first wavelength converting layer segment.

Abstract: A three-dimensional processor (3D-processor) for parallel computing includes a plurality of computing elements. Each computing element comprises at least a three-dimensional memory (3D-M) array for storing at least a portion of a look-up table (LUT) for a mathematical function and an arithmetic logic circuit (ALC) for performing arithmetic operations on the LUT data. Deficiency in latency is offset by a large scale of parallelism.

Abstract: A wavelength converting layer is partially diced to generate a first and second wavelength converting layer segment and to allow partial isolation between the first segment and the second segment such that the wavelength converting layer segments are connected by a connecting wavelength converting layer. The first and second wavelength converting layer segments are attached to a first and second light emitting device, respectively to create a first and second pixel. The connecting wavelength converting layer segment is removed to allow complete isolation between the first pixel and the second pixel. An optical isolation material is applied to exposed surfaces of the first and second pixel and a sacrificial portion of the wavelength converting layer segments and optical isolation material attached to the sacrificial portion is removed from a surface facing away from the first light emitting device, to expose a emitting surface of the first wavelength converting layer segment.

Abstract: Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.

Abstract: A light emitting device may comprise a cup having a wall extending from a first area of the cup to a second area of the cup. The wall is formed from or coated with a reflective material. The light emitting device may comprise a light extraction bridge extending beyond an outer diameter of at least a portion of the wall for directing light into the air. The light may be produced by an LED die mounted at the second area of the cup such that at least some of a light emitted from the LED die exits the cup, having been reflected from the wall and the light extraction bridge.

Abstract: The present invention discloses a processor comprising three-dimensional memory (3D-M) array (3D-processor). Instead of logic-based computation (LBC), the 3D-processor uses memory-based computation (MBC). It comprises an array of computing elements, with each computing element comprising an arithmetic logic circuit (ALC) and a 3D-M-based look-up table (3DM-LUT). The ALC performs arithmetic operations on the LUT data, while the 3DM-LUT is stored in at least one 3D-M array.

Abstract: The present disclosure provides a method for improving the computational efficiency of an electromagnetic transients program (EMTP-type) phase domain synchronous machine model. The method comprises: acquiring a traditional phase domain synchronous machine model; acquiring matrix relations between mutual inductance matrices of stator windings and rotor windings according to a trigonometric transformation equation; substituting the matrix relations into the original expression of Req and the original formulation of eh(t), respectively, and deriving to obtain a simplified formulation of the equivalent resistance matrix Req and a simplified formulation of the total history term eh(t); and acquiring an efficient phase domain synchronous machine model.

Abstract: A processor of an AR device may receive a plurality of points within a coordinate system corresponding to points in space. The plurality of points may define a path between a starting location within the coordinate system and a navigation destination within the coordinate system. The processor may determine that the AR device is at the starting location. The processor may receive camera data from a camera of the AR device. The camera data may represent at least a portion of the points in space. The processor may generate an AR display. The generating may include overlaying a graphic illustrating the position of at least a portion of the points within the coordinate system over equivalent points in space illustrated by the camera data.

Abstract: A method for preparing an improved article including a nickel-based superalloy is presented. The method includes heat-treating a workpiece including a nickel-based superalloy at a temperature above the gamma-prime solvus temperature of the nickel-based superalloy and cooling the heat-treated workpiece with a cooling rate less than 50 degrees Fahrenheit/minute from the temperature above the gamma-prime solvus temperature of the nickel-based superalloy so as to obtain a cooled workpiece. The cooled workpiece includes a coprecipitate of a gamma-prime phase and a gamma-double-prime phase, wherein the gamma-prime phase of the coprecipitate has an average particle size less than 250 nanometers. An article having a minimum dimension greater than 6 inches is also presented. The article includes a material having a coprecipitate of a gamma-prime phase and a gamma-double-prime phase, wherein the gamma-prime phase of the coprecipitate has an average particle size less than 250 nanometers.

Abstract: Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.

Abstract: An acquisition method of the severest voltage stability margin based on coordinated continuation power flow is disclosed comprising: S1, calculating a partial derivative of initial voltage amplitude of a critical node with respect to the load level of each partition under the current load; S2, calculating the amount of the load growth of each partition according to the partial derivative and a preset load growth step length, and updating the active power output and current load based on a coordinated continuation power flow model; S3, judging whether a new voltage amplitude of the updated critical node is less than the initial voltage amplitude if the updated coordinated power flow converges; S4, judging whether the preset load growth step length is less than a convergence threshold if the new voltage amplitude is greater than or equal to the initial voltage amplitude, and acquiring the severest voltage stability margin if so.

Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

Abstract: The present invention provides a multinational adapter structure comprising a front cover, a main body, and aback cover. The front cover has a first through-hole and a second through-hole. The main body is provided with a press assembly, a first electrical connection assembly, and a second electrical connection assembly. At least one elastic member is provided between the press assembly and the main body. The first electrical connection assembly and the second electrical connection assembly respectively having a first conductive member and a second conductive member are disposed on the press assembly. The back cover is assembled on one side of the front cover, and the main body is enclosed by the back cover and the front cover. Through pushing the press assembly, the first electrical connection assembly or the second electrical connection assembly can be moved in a distance to accommodate with different national standards of various countries.

Abstract: The invention provides efficient searching with fuzzy criteria in very large information systems. The technique of the present invention uses the Pigeonhole Principle approach. This approach can be utilized with different embodiments, but the most effective realization would be to amplify some already given intrinsic approximate matching capabilities, like those in the FuzzyFind method [1][2]. Considering the following problem, data to be searched is presented as a bit-attribute vector. The searching operation includes finding a subset of this bit-attribute vector that is within particular Hamming distance. Normally, this search with approximate matching criteria requires sequential lookup for the whole collection of the attribute vector. This process can be easily parallelized, but in very large information systems this still would be slow and energy consuming.

Abstract: A transmission interface communicating method used in a display device that includes the steps outlined below is provided. A first status update signal is received from a host device to turn a hot plug detect (HPD) status of the display device to a high status. A HPD signal having a low status is transmitted to the host device in response to the first status update signal. A configuration signal is received from the host device. A configuration acknowledgement signal is transmitted to the host device in response to the configuration signal. The HPD signal having the high status is actively transmitted to the host device.

Abstract: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

Abstract: A silent hub structure includes a hub housing, an interlocking ring, a detent ring and a cassette base. The interlocking ring is installed inside the hub housing and has a central through-hole slot therein through which a detent ring is rotatably disposed therethrough. The through-hole slot is internally and circumferentially provided with a plurality of receiving grooves recessed at an equal distance therebetween on the internal wall. Each of these receiving grooves is disposed with a metal roller pin along the axial direction. The forward-rotating direction side of every receiving groove forms a clamping portion; a magnetic member is disposed in the interlocking ring near the clamping portion of each of the receiving groove separately, whereas the backward-rotating direction side of every receiving groove forms a releasing portion.

Abstract: A three-dimensional processor (3D-processor) for calculating mathematical functions in parallel, comprises a larger number (e.g. at least one thousand) of computing elements, with each computing element comprising at least one three-dimensional memory (3D-M) array for storing at least a portion of a look-up table (LUT) for a mathematical function and an arithmetic logic circuit (ALC) for performing arithmetic operations on the LUT data. Even though each individual 3D-M cell is slower than a conventional two-dimensional memory (2D-M) cell, this deficiency in speed is offset by a significantly larger scale of parallelism.

Abstract: Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.