Patents by Inventor Chen Wang

Chen Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250098507
    Abstract: The present disclosure provides a display panel and a display device, pertains to the field of display technologies. The present disclosure provides a display panel at least including a display region. The display panel includes a base substrate and a plurality of sub-pixels disposed on the base substrate, a sub-pixel at least includes a light emitting device, and the light emitting device is located in the display region. The light emitting device includes a first electrode, a light emitting layer, and a second electrode provided in sequence in a direction facing away from a base substrate. The display panel further includes a heat conduction structure disposed on a side of the first electrode facing away from the light emitting layer, and orthographic projections of the heat conduction structure and the first electrode on the base substrate are at least partially overlapped with each other.
    Type: Application
    Filed: February 20, 2023
    Publication date: March 20, 2025
    Inventors: Xiaotian PANG, Jiaqiang WANG, Xiantao LIU, Yunshan WANG, Chen MENG, Yonghui WANG, Wei SUN, Siheng XU, Dahai HU, Ziyan LI, Zhong HU
  • Publication number: 20250097685
    Abstract: A discover method includes a collection phase and a subsequent discovery phase. The collection phase includes receiving an NBIRTH message for each node and receiving a DBIRTH message for each device. A group ID and a corresponding node ID are extracted and cached from each NBIRTH message and a group ID, a node ID and a device ID are extracted from each DBIRTH message. The discovery phase includes publishing a REBIRTH message for each node having a cached group ID and node ID. The REBIRTH message causes the corresponding node to publish an NBIRTH message for the corresponding node, as well as a DBIRTH message for each associated device. Nodes may be discovered based on the NBIRTH messages published during the discovery phase and devices may be discovered based on the DBIRTH messages published during the discovery phase.
    Type: Application
    Filed: August 30, 2024
    Publication date: March 20, 2025
    Inventors: Chen Shanshan, Lifen Zhang, Shao Min Sun, Shida Wang, Will Qi, Yingying Zhu
  • Publication number: 20250098261
    Abstract: Semiconductor structures and methods of forming the same are provided. In an embodiment, an exemplary method includes depositing a dummy gate material layer over a first fin-shaped active region, patterning the dummy gate material layer to form a dummy gate electrode, wherein the dummy gate electrode has a footing feature at an interface between the first fin-shaped active region and the dummy gate electrode, oxidizing the footing feature and a sidewall portion of the dummy gate electrode to form a dielectric gate spacer, and replacing a remaining portion of the dummy gate electrode with a gate structure.
    Type: Application
    Filed: January 27, 2024
    Publication date: March 20, 2025
    Inventors: Yi-Hong Wang, Hui-Hsuan Kung, Yao-Zhong Dong, Yi-Li Huang, Yi-Chen Li
  • Publication number: 20250093705
    Abstract: A display substrate is provided to include: a first base substrate including a sealing region and a display port region, wherein at least one first connection region and at least one second connection region are in the display port region, a first overlapping region is formed between the second and first connection regions; first and second connection terminals in the first and second connection regions, respectively; and a planarization layer including at least one first trench and at least one second trench corresponding to the first and second connection regions therein, respectively; orthographic projections of bottoms of first and second trenches on the first base substrate cover corresponding first and second connection regions, respectively; the planarization layer includes: a first pattern corresponding to the first overlapping region; orthographic projections of the first pattern and its corresponding first overlapping region on the first base substrate overlap with each other.
    Type: Application
    Filed: October 31, 2022
    Publication date: March 20, 2025
    Inventors: Bin WAN, Xiaoyuan WANG, Hui GUO, Chen XU, Guodong YANG, Junming CHEN, Yan LIU, Xun PU, Yuanyuan ZHU, Zhongshan WU, Dan LEI
  • Publication number: 20250098299
    Abstract: Provided is an array substrate. The array substrate includes a substrate, comprising a display region and a peripheral region surrounding the display region, the peripheral region at least including a gate-driver-on-array (GOA) region extending in a first direction; a plurality of thin film transistors, the plurality of thin film transistors being disposed at least in the GOA region; and a plurality of first patterns, wherein the plurality of first patterns are disposed at least on one side of the GOA region, the plurality of first patterns are spaced apart from the GOA region in the first direction, and a plurality of first patterns disposed on a same side of the GOA region are arranged in an array.
    Type: Application
    Filed: September 26, 2022
    Publication date: March 20, 2025
    Applicants: Chongqing BOE Optoelectronics Technology Co., Ltd., BOE Technology Group Co., Ltd.
    Inventors: Guodong YANG, Xiaoyuan WANG, Hui GUO, Chen XU, Bin WAN, Junming CHEN, Yan LIU, Xun PU, Yuanyuan ZHU
  • Publication number: 20250096043
    Abstract: A semiconductor device includes a channel structure, a first gate structure straddling the channel structure, and an epitaxial structure. The epitaxial structure is adjacent to the first gate structure and is coupled to an end of the channel structure. The semiconductor device further includes a first contact structure disposed over and in contact with the epitaxial structure and a nitride-based conformal layer extending at least over the first contact structure. The semiconductor device further includes an oxide-based layer disposed over the nitride-based conformal layer. A portion of the nitride-based conformal layer, disposed over the first contact structure, has a dip that is filled with a first portion of the oxide-based layer.
    Type: Application
    Filed: December 4, 2024
    Publication date: March 20, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Te-Chih Hsiung, Yi-Chen Wang, Guang-Hong Cheng, Wen Wang, Yuan-Tien Tu, Huan-Just Lin
  • Publication number: 20250096357
    Abstract: The present disclosure describes a multi-function, integrated Super Beam assembly structure with integrated structural, cooling, and transverse elastic compliance functions; and Thermal Management Propagation (TMP) protection. The Super Beam assembly includes a pair of parallel face plates, coolant channel cover plates, and coolant channels that are defined by the face plate and the one or more coolant channel cover plates. The structural design of the cooling channels, and the corresponding air gaps formed in-between them, allows a transverse elastic compliance of the Super Beam assembly to be tuned to different amounts of elasticity. Top, bottom and/or end structural channels may be included. A pair of TMP suppression channels may be attached to the Super Beam assembly structure with an adhesive “thermal fuse” that preferentially melts and causes the pair of TMP suppression channels to detach from the Super Beam assembly during overheating in a TMP event.
    Type: Application
    Filed: November 1, 2023
    Publication date: March 20, 2025
    Applicant: GM GLOBAL TECHNOLOGY OPERATIONS LLC
    Inventors: Lu Huang, Hui-ping Wang, Chengwu Duan, Derek F. Lahr, Zhenwen Hu, Jian Yao, Blair E. Carlson, Xiaoling Chen
  • Publication number: 20250092543
    Abstract: An oxygen evolution reduction electrocatalyst includes a pyrochlore compound with the chemical formula Sm2Ru2xM2-2xO7, where M is selected from the group consisting of Ir, Sc, Fe, Cu, Pd, Cr, and Rh, and x is less than 1.0 and greater than or equal to 0.5. Also, a water electrolysis cell includes an anode, a cathode, an electrolyte, and the oxygen evolution reduction electrocatalyst.
    Type: Application
    Filed: September 19, 2023
    Publication date: March 20, 2025
    Applicants: Toyota Motor Engineering & Manufacturing North America, Inc., Toyota Jidosha Kabushiki Kaisha
    Inventors: Siwen Wang, Chen Ling, Yui Wakabayashi, Honghong Lin, Li Q. Zhou, Charles Alexander Roberts, Hongfei Jia, Debasish Banerjee
  • Publication number: 20250092880
    Abstract: A casing assembly, an electric fan, and a floor scrubber are provided. The casing assembly includes a housing and a cover plate. The housing has an open end. The cover plate has an assembly end connected to the open end. One of the open end and the assembly end is provided with an elastic sealing part, and the other is provided with a fitting part. A first annular projection and a second annular projection are arranged between the elastic sealing part and the fitting part. The first annular projection is located on an inner side of the second annular projection, or vice versa, in the radial direction of the open end. Two ends of the first annular projection abut against the elastic sealing part and the fitting part, respectively. Two ends of the second annular projection abut against the elastic sealing part and the fitting part, respectively.
    Type: Application
    Filed: November 29, 2024
    Publication date: March 20, 2025
    Applicant: GUANGDONG WELLING MOTOR MANUFACTURING CO., LTD.
    Inventors: An'an CHEN, Xiaowei WANG, Meijian XIONG, Zhengzhong QIAO
  • Publication number: 20250092201
    Abstract: Disclosed herein are polyamide substrates that may be reliably used in additive manufacturing to produce a wide variety of 3D printed articles, protective films or membranes. The polyamide substrate can be formed via thiol-ene click chemistry reactions between diallyl amide or other alkene monomers, reacted with thiol monomers, that can be activated by photoirradiation at relatively low temperatures (e.g., about 80° C.). As a result, the polyamide substrates disclosed herein may be cured using a simple, energy efficient curing process that allows for additive manufacturing where the produced 3d printed article exhibits increased toughness rather than being brittle as are most 3d printed articles.
    Type: Application
    Filed: September 13, 2024
    Publication date: March 20, 2025
    Inventors: Caleb Reese, Chen Wang
  • Patent number: 12254321
    Abstract: A method of resetting an integrated circuit, includes: generating, in response to a reset signal intended for a first data unit, a synchronous reset signal based on the reset signal, and outputting the synchronous reset signal to the first data unit after at least one preset period; and generating, in response to a first data signal output by the first data unit, a second data signal based on the synchronous reset signal and the first data signal, and outputting the second data signal to a second data unit. An integrated circuit is also provided.
    Type: Grant
    Filed: August 19, 2021
    Date of Patent: March 18, 2025
    Assignee: SANECHIPS TECHNOLOGY CO., LTD.
    Inventors: Chongyang Wang, Chen Lin, Huafeng Xu, Bin Guo
  • Patent number: 12254674
    Abstract: A method for recognizing arteries and veins on a fundus image includes: executing a pre-process operation on the fundus image, so as to obtain a pre-processed fundus image; generating a fundus spectral reflection dataset associated with pixels of the pre-processed fundus image, based on the pre-processed fundus image, and a spectral transformation matrix; obtaining a plurality of principle component scores associated with the pixels of the pre-processed fundus image, respectively; and determining, for each of the pixels of the pre-processed fundus image that has been determined as a part of a blood vessel, whether the pixel belongs to a part of an artery or a part of a vein.
    Type: Grant
    Filed: July 22, 2022
    Date of Patent: March 18, 2025
    Assignee: National Chung Cheng University
    Inventors: Hsiang-Chen Wang, Yu-Ming Tsao, Yong-Song Chen, Yu-Sin Liu, Shih-Wun Liang
  • Patent number: 12254260
    Abstract: An integrated circuit layout is provided. The integrated circuit layout includes one or more first cell rows partially extending across a space arranged for an integrated circuit layout along a first direction. Each of the one or more first cell rows has a first height along a second direction perpendicular to the first direction. The integrated circuit layout includes one or more third cell rows partially extending across the space along the first direction. Each of the one or more third cell rows has a second height along the second direction, the second height different from the first height.
    Type: Grant
    Filed: July 28, 2023
    Date of Patent: March 18, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Sheng-Hsiung Chen, Chun-Chen Chen, Shao-huan Wang, Kuo-Nan Yang, Chung-Hsing Wang, Ren-Zheng Liao, Meng-Xiang Lee
  • Patent number: 12254928
    Abstract: An operation method for a memory device is provided. A memory block of the memory device includes an array of memory cells including cell strings and cell pages. Serially numbered and arranged bit lines are connected to the cell strings, respectively. Serially numbered and arranged word lines are connected to the cell pages, respectively. The operation method includes: performing a batch writing to each of the cell pages, such that the memory cells in each cell page are respectively grouped as an earlier written memory cell or a later written memory cell, depending on the connected bit line is either even-numbered or odd-numbered. Each cell page has a respective write sequence. In terms of write sequence, each cell page is identical with one of 2 nearest cell pages, and opposite to the other of the 2 nearest cell pages.
    Type: Grant
    Filed: May 3, 2023
    Date of Patent: March 18, 2025
    Assignee: Winbond Electronics Corp.
    Inventors: Yi-Chen Fan, Chieh-Yen Wang
  • Patent number: 12256372
    Abstract: A method for MBS acquisition is provided. The method includes receiving system information from a BS; determining a first CORESET configuration and a second CORESET configuration according to the system information, the first CORESET configuration determining a first set of CORESETs scheduling at least one MCCH, the second CORESET configuration determining a second set of CORESETs scheduling a plurality of MTCHs; receiving an MCCH message on the at least one MCCH provided through a first beam of a plurality of beams associated with the BS; and determining, according to the second CORESET configuration and the MCCH message, a plurality of MBS-specific CORESET groups in the second set of CORESETs, wherein each of the plurality of MBS-specific CORESET groups corresponds to a respective MBS session and includes at least two CORESETs configured to be provided through at least two different beams of the plurality of beams. A UE using the method is also provided.
    Type: Grant
    Filed: April 29, 2022
    Date of Patent: March 18, 2025
    Assignee: SHARP KABUSHIKI KAISHA
    Inventors: Chia-Hung Wei, Hai-Han Wang, Hung-Chen Chen, Heng-Li Chin
  • Patent number: 12254368
    Abstract: A smart card, has a central area and an edge area surrounding the central area including a first protection layer, a function layer and a second protection layer which are sequentially stacked. The function layer comprises: a read-write module and a light-emitting module. The smart card facilitates the user to know a use state of the smart card, thereby largely avoiding the user from making payment or repeating payment without knowledge, which facilitates ensuring property safety.
    Type: Grant
    Filed: August 22, 2022
    Date of Patent: March 18, 2025
    Assignee: GIESECKE+DEVRIENT EPAYMENTS GMBH
    Inventors: Wensheng Zhu, Chen Fang, Dunpu Wang
  • Publication number: 20250088670
    Abstract: A method of decoding is provided. The method includes receiving a video bitstream including a picture unit (PU), the PU including a picture header (PH) network abstraction layer (NAL) unit having a picture header NAL unit type (PH_NUT) and an associated video coding layer (VCL) NAL unit, the PH_NUT signifying that a layer identifier (ID) of the PH NAL unit is equal to a layer ID of the associated video coding layer (VCL) NAL unit and a temporal ID of the PH NAL unit is equal to a temporal ID of the PU; and decoding a coded picture from the PU to obtain a decoded picture.
    Type: Application
    Filed: September 12, 2024
    Publication date: March 13, 2025
    Inventors: FNU Hendry, Ye-Kui Wang, Jianle Chen
  • Publication number: 20250089264
    Abstract: A 3D memory array has data storage structures provided at least in part by one or more vertical films that do not extend between vertically adjacent memory cells. The 3D memory array includes conductive strips and dielectric strips, alternately stacked over a substrate. The conductive strips may be laterally indented from the dielectric strips to form recesses. A data storage film may be disposed within these recesses. Any portion of the data storage film deposited outside the recesses may have been effectively removed, whereby the data storage film is essentially discontinuous from tier to tier within the 3D memory array. The data storage film within each tier may have upper and lower boundaries that are the same as those of a corresponding conductive strip. The data storage film may also be made discontinuous between horizontally adjacent memory cells.
    Type: Application
    Filed: November 26, 2024
    Publication date: March 13, 2025
    Inventors: Sheng-Chen Wang, Feng-Cheng Yang, Meng-Han Lin, Sai-Hooi Yeong, Yu-Ming Lin, Han-Jong Chia
  • Publication number: 20250084533
    Abstract: The present invention belongs to the technical field of PECVD devices. Disclosed are a drooping cover plate and a PECVD device having the drooping cover plate. In the drooping cover plate of the present invention, a first insulating frame is arranged on a bottom plate frame, and a second insulating frame is arranged on the first insulating frame; the bottom plate frame is formed of several bottom plates connected to each other, a lower side face of each bottom plate is provided with an extension portion that is perpendicular to the lower side face of the bottom plate; the first insulating frame is formed of several first insulating plates joined together, and the second insulating frame is formed of several second insulating plates joined together; and several strip-shaped holes communicating an inner side and an outer side of the bottom plate frame are formed.
    Type: Application
    Filed: April 21, 2022
    Publication date: March 13, 2025
    Inventors: Yanan LIU, Bin ZHANG, Chen CHEN, Dengzhi WANG, Huan LIU
  • Publication number: 20250087510
    Abstract: Embodiments of the present disclosure are directed to a system for monitoring moving and stepping silicon wafers and a method adopts the system. The system includes a first sensing element to monitor whether a gap between adjacent silicon wafers exists, and a second sensing element to monitor whether two silicon wafers are laminated. The first sensing element and the second sensing element are both disposed in a slot where the silicon wafers are turned over, and suspended on a front side of a sorting wheel in the slot and obliquely arranged towards one side of the sorting wheel. The system installed in the narrow space between the cleaning tank and the sorting tank has simple structure and is capable of quickly and accurately monitoring the silicon wafer turnover, and accurately determining whether there is a continuous or laminated silicon wafer during the silicon wafer turnover process.
    Type: Application
    Filed: June 26, 2023
    Publication date: March 13, 2025
    Applicant: TCL ZHONGHUAN RENEWABLE ENERGY TECHNOLOGY CO., LTD.
    Inventors: Lihui JIN, Hua YANG, Zhigao REN, Mingqiang GENG, Huan WANG, Chuanling AI, Dawei WANG, Zhijun WU, Hongxia CEN, Chen WEI