Patents by Inventor Chen Wang

Chen Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240140554
    Abstract: Example front forks for bicycles are described herein. An example front fork includes a crown having a top side and a bottom side opposite the top side. The crown defines an opening between the top side and the bottom side. The front fork includes a first leg and a second leg coupled to and extending from the bottom side of the crown. The front fork also includes a steerer tube disposed in the opening of the crown and extending from the top side of the crown. The steerer tube and the crown coupled by a weld at or near the bottom side of the crown.
    Type: Application
    Filed: October 28, 2022
    Publication date: May 2, 2024
    Applicant: SRAM, LLC
    Inventors: CHI HUI SU, HONG CHOU LEE, CHU CHEN WANG, EN-CHIEH CHEN
  • Patent number: 11971368
    Abstract: The present disclosure provides a determination method, an elimination method and an apparatus for an electron microscope aberration. The determination method comprises: training a neural network for image recognition using a plurality of electron microscope simulation images to obtain an electron microscope image recognition model; recognizing an electron microscope image of an experimental sample using the electron microscope image recognition model to obtain the electron microscope simulation image corresponding to the electron microscope image of the experimental sample; and obtaining the corresponding set aberration as an imaging aberration of the electron microscope image of the experimental sample according to the electron microscope simulation image corresponding to the electron microscope image of the experimental sample.
    Type: Grant
    Filed: May 26, 2021
    Date of Patent: April 30, 2024
    Assignee: SOUTH CHINA AGRICULTURAL UNIVERSITY
    Inventors: Fang Lin, Qi Zhang, Chen Wang
  • Patent number: 11970415
    Abstract: The present invention discloses a sludge anaerobic fermentation treatment method with simultaneously enhanced acid production and phosphorus removal. The method includes steps of: (1) adding waste activated sludge into an anaerobic reaction system, with a concentration of a total suspended solid (TSS) of 10000-15000 mg/L; (2) maintaining a pH value of the waste activated sludge at 10±0.1; adding powdery magnetite of 0.3-0.9 g/gVS S. Compared with simple alkaline conditions, in the method of the present invention, an accumulation amount of short chain fatty acids (SCFAs) in a fermentation broth is increased by 20%, and a content of orthophosphoric acid is reduced by 10%. The method can further improve the enhancing effect by using sulfuric acid to modify the magnetite, the accumulation amount of SCFAs can be increased by 36.7% at most, and the content of phosphorus and refractory organic substances can be reduced by 32.4% and 40.4% at most, respectively.
    Type: Grant
    Filed: January 15, 2021
    Date of Patent: April 30, 2024
    Assignee: ZHEJIANG UNIVERSITY
    Inventors: Liang Zhu, Donghui Lu, Jianxun Chen, Chen Wang, Taixing Han, Xiangyang Xu
  • Patent number: 11970575
    Abstract: The present disclosure relates to a composition that includes a structure that includes where R1 includes at least one of a carbon atom and/or an oxygen atom, R2 includes at least one of a carbon atom and/or an oxygen atom, and represents a covalent bond. In some embodiments of the present disclosure, the composition may be bioderived.
    Type: Grant
    Filed: October 5, 2021
    Date of Patent: April 30, 2024
    Assignee: Alliance for Sustainable Energy, LLC
    Inventors: Chen Wang, Robynne E. Murray, Gregg Tyler Beckham, Scott Mauger, Nicholas A. Rorrer
  • Publication number: 20240138152
    Abstract: In accordance with embodiments, a memory array is formed with a multiple patterning process. In embodiments a first trench is formed within a multiple layer stack and a first conductive material is deposited into the first trench. After the depositing the first conductive material, a second trench is formed within the multiple layer stack, and a second conductive material is deposited into the second trench. The first conductive material and the second conductive material are etched.
    Type: Application
    Filed: January 2, 2024
    Publication date: April 25, 2024
    Inventors: Feng-Cheng Yang, Meng-Han Lin, Sheng-Chen Wang, Han-Jong Chia, Chung-Te Lin
  • Patent number: 11968838
    Abstract: A device includes a semiconductor substrate; a word line extending over the semiconductor substrate; a memory film extending along the word line, wherein the memory film contacts the word line; a channel layer extending along the memory film, wherein the memory film is between the channel layer and the word line; source lines extending along the memory film, wherein the memory film is between the source lines and the word line; bit lines extending along the memory film, wherein the memory film is between the bit lines and the word line; and isolation regions, wherein each isolation region is between a source line and a bit line, wherein each of the isolation regions includes an air gap and a seal extending over the air gap.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: April 23, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Sheng-Chen Wang, Kai-Hsuan Lee, Sai-Hooi Yeong, Chi On Chui
  • Patent number: 11967622
    Abstract: Embodiments provide a dielectric inter block disposed in a metallic region of a conductive line or source/drain contact. A first and second conductive structure over the metallic region may extend into the metallic region on either side of the inter block. The inter block can prevent etchant or cleaning solution from contacting an interface between the first conductive structure and the metallic region.
    Type: Grant
    Filed: September 3, 2021
    Date of Patent: April 23, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Te-Chih Hsiung, Jyun-De Wu, Yi-Chen Wang, Yi-Chun Chang, Yuan-Tien Tu
  • Patent number: 11967452
    Abstract: A coil device includes a first conductor, a second conductor, and a core. The second conductor is disposed inside the first conductor and at least partly extending along the first conductor. The core internally arranges the first conductor and the second conductor. An insulating layer is formed at least between the first conductor and the second conductor.
    Type: Grant
    Filed: August 17, 2021
    Date of Patent: April 23, 2024
    Assignee: TDK CORPORATION
    Inventors: Chen Wang, Syun Ashizawa, Satoshi Sugimoto
  • Patent number: 11966628
    Abstract: A memory device, includes a memory array for storing a plurality of vector data each of which has an MSB vector and a LSB vector. The memory array includes a plurality of memory units each of which has a first bit and a second bit. The first bit is used to store the MSB vector of each vector data, the second bit is used to store the LSB vector of each vector data. A bit line corresponding to each vector data executes one time of bit-line-setup, and reads the MSB vector and the LSB vector of each vector data according to the bit line. The threshold voltage distribution of each memory unit is divided into N states, where N is a positive integer and N is less than 2 to the power of 2, and the effective bit number stored by each memory unit is less than 2.
    Type: Grant
    Filed: June 2, 2022
    Date of Patent: April 23, 2024
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Wei-Chen Wang, Han-Wen Hu, Yung-Chun Li, Huai-Mu Wang, Chien-Chung Ho, Yuan-Hao Chang, Tei-Wei Kuo
  • Patent number: 11966170
    Abstract: A method includes receiving a wafer, measuring a surface topography of the wafer; calculating a topographical variation based on the surface topography measurement performing a single-zone alignment compensation when the topographical variation is less than a predetermined value or performing a multi-zone alignment compensation when the topographical variation is greater than the predetermined value; and performing a wafer alignment according to the single-zone alignment compensation or the multi-zone alignment compensation.
    Type: Grant
    Filed: October 27, 2020
    Date of Patent: April 23, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ai-Jen Hung, Yung-Yao Lee, Heng-Hsin Liu, Chin-Chen Wang, Ying Ying Wang
  • Publication number: 20240126526
    Abstract: Mechanisms are provided for improving performance of container images. Container image chunks are generated from a container image file and input into one or more trained machine learning (ML) computer models, trained to classify container image chunks with regard to a plurality of container image performance characteristic classifications. For each container image chunk it is determined whether the a corresponding classification is negative, and in response to the classification being negative, an entry in a knowledge base having patterns of content matching content in the container image chunk is identified to determine one or more reasons for modification of the chunk specified in the entry. A notification output is generated specifying the container image chunks, their corresponding container image performance characteristic classifications, and the reasons for modification of the chunks.
    Type: Application
    Filed: October 14, 2022
    Publication date: April 18, 2024
    Inventors: Abhishek Malvankar, Alaa S. Youssef, Chen Wang, Mariusz Sabath
  • Publication number: 20240123311
    Abstract: An artificial shuttlecock includes a ball head, a plurality of feathers, and a plurality of stems. Each of the feathers includes a notch. The notch is disposed on an outer edge of the feather. A ball head end of the stem is connected to the ball head, and a feather end is connected to the feather. The stem includes a body, which tapers from the end close to the ball end to the feather end. The end of the body close to the ball end has a first width, and the body has a second width at the feather. The first width is between 2.1 mm and 2.4 mm, and the second width is between 0.4 mm and 0.6 mm.
    Type: Application
    Filed: October 6, 2023
    Publication date: April 18, 2024
    Inventors: SHU-JUNG CHEN, TZU-WEI WANG, HSIN-CHEN WANG
  • Patent number: 11962949
    Abstract: A method of performing air pollution estimation is provided. The method is to be implemented using a processor of a computer device and includes: generating a spectral image based on an original color image of an environment under test using a spectral transformation matrix; supplying the spectral image as an input into an estimating model for air pollution estimation; and obtaining an estimation result from the estimating model indicating a degree of air pollution of the environment under test.
    Type: Grant
    Filed: July 22, 2021
    Date of Patent: April 16, 2024
    Assignee: National Chung Cheng University
    Inventors: Hsiang-Chen Wang, Chia-Cheng Huang, Ting-Chun Men
  • Patent number: 11961893
    Abstract: Improved conductive contacts, methods for forming the same, and semiconductor devices including the same are disclosed. In an embodiment, a semiconductor device includes a first interlayer dielectric (ILD) layer over a transistor structure; a first contact extending through the first ILD layer, the first contact being electrically coupled with a first source/drain region of the transistor structure, a top surface of the first contact being convex, and the top surface of the first contact being disposed below a top surface of the first ILD layer; a second ILD layer over the first ILD layer and the first contact; and a second contact extending through the second ILD layer, the second contact being electrically coupled with the first contact.
    Type: Grant
    Filed: June 18, 2021
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Te-Chih Hsiung, Jyun-De Wu, Yi-Chen Wang, Yi-Chun Chang, Yuan-Tien Tu
  • Patent number: 11955921
    Abstract: One embodiment can provide a photovoltaic roof tile. The photovoltaic roof tile can include a transparent front cover, a transparent back cover, and a plurality of polycrystalline-Si-based photovoltaic structures positioned between the front cover and the back cover. A respective polycrystalline-Si-based photovoltaic structure has a front surface facing the front cover and a back surface facing the back cover. The photovoltaic roof tile can further include a paint layer positioned on a back surface of the back cover facing away from the front cover. A color of the paint layer substantially matches a color of the front surface of the respective polycrystalline-Si-based photovoltaic structure.
    Type: Grant
    Filed: June 15, 2022
    Date of Patent: April 9, 2024
    Assignee: Tesla, Inc.
    Inventors: John Liu, Yangsen Kang, Anh N. Duong, Yongkee Chae, Milan Padilla, Chen Wang, Remy D. Labesque
  • Publication number: 20240109224
    Abstract: A method of manufacturing a waffle slab includes providing a bottom mold separately on columns and exposing joint heads of the columns from the bottom mold; providing first sets of beam bars separately on the bottom mold to be parallel along a first direction; and providing second sets of beam bars separately on the bottom mold to be parallel along a second direction, wherein the second sets b of beam bars are configured to intersect with the first sets of beam bars without interference and together they form accommodation spaces for waffle molds.
    Type: Application
    Filed: September 6, 2023
    Publication date: April 4, 2024
    Inventors: Samuel YIN, Kun-Jung HSU, Jui-Chen WANG, Jhih-Syuan CHEN
  • Patent number: 11950428
    Abstract: A memory device includes a first stacking structure, a second stacking structure, a plurality of first isolation structures, gate dielectric layers, channel layers and conductive pillars. The first stacking structure includes a plurality of first gate layers, and a second stacking structure includes a plurality of second gate layers, where the first stacking structure and the second stacking structure are located on a substrate and separated from each other through a trench. The first isolation structures are located in the trench, where a plurality of cell regions are respectively confined between two adjacent first isolation structures of the first isolation structures in the trench, where the first isolation structures each includes a first main layer and a first liner surrounding the first main layer, where the first liner separates the first main layer from the first stacking structure and the second stacking structure.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sheng-Chen Wang, Meng-Han Lin, Sai-Hooi Yeong, Yu-Ming Lin, Han-Jong Chia
  • Publication number: 20240104503
    Abstract: Provided are a method for generating a project flow, an electronic device, and a storage medium. The method includes determining at least one process node corresponding to a target project to be configured and determining node attribute information of the at least one process node; determining a node dependence of the at least one process node; and determining, based on the node dependence and the node attribute information, execution project flow information corresponding to the target project to be configured.
    Type: Application
    Filed: November 30, 2023
    Publication date: March 28, 2024
    Inventors: Tao HONG, Dian XIONG, Chen WANG, Linxuan SHI
  • Publication number: 20240102328
    Abstract: A hinge device includes a pivot seat, a rotating shaft, a first friction block, and a locking assembly. By being structurally provided with a sleeve, a first cam ring, a first elastic ring, a second friction block, a second cam ring, a second elastic ring, an elastic element, a locking portion, and a cover of the locking assembly, the hinge device has a locking function and a long service life.
    Type: Application
    Filed: July 10, 2023
    Publication date: March 28, 2024
    Inventors: Chun-Fu CHANG, Hui-Chen WANG, Yi-Chun TANG
  • Publication number: 20240091595
    Abstract: Disclosed is a smart exercise apparatus equipped with electronic tags. The apparatus includes an exercise apparatus and an accessory. The exercise apparatus is provided with a reader, and the accessory is provided with an electronic tag, wherein the electronic tag is wirelessly connected to the reader. In the smart exercise apparatus, readers and electronic tags are respectively arranged on the exercise apparatus and the accessories thereof, such that the accessories are automatically identified in response to approaching the exercise apparatus.
    Type: Application
    Filed: October 11, 2022
    Publication date: March 21, 2024
    Applicant: CHENGDU FIT-FUTURE TECHNOLOGY CO., LTD.
    Inventors: Jin LIANG, Chen WANG, Jiucheng CAI, Yuhua LU