Abstract: A method that includes measuring vibration levels in a semiconductor manufacturing apparatus, determining one or more sections of the semiconductor manufacturing apparatus that vibrate at levels greater than a predetermined vibration level, and reducing the vibration levels in the one or more sections to be at or within the predetermined vibration level by coupling one or more weights to an external surface of the semiconductor manufacturing apparatus in the one or more sections.

Abstract: A lithography method to pattern a first semiconductor wafer is disclosed. An optical mask is positioned over the first semiconductor wafer. A first region of the first semiconductor wafer is patterned by directing light from a light source through transparent regions of the optical mask. A second region of the first semiconductor wafer is patterned by directing energy from an energy source to the second region, wherein the patterning of the second region comprises direct-beam writing.

Abstract: Testis-restricted melanoma antigen (MAGE) proteins are frequently hijacked in cancer and play a critical role in tumorigenesis. These proteins assemble with E3 ubiquitin ligases and function as substrate adaptors that direct the ubiquitination of novel targets, including key tumor suppressors. However, the development of MAGE-directed therapeutics heretofore has been extremely limited. In one aspect, the disclosure relates to compounds and peptides useful as inhibitors of MAGE-All: substrate interaction, methods of making same, pharmaceutical compositions comprising same, and methods of treating a disorder associated with a MAGE-All dysfunction. e.g., a cancer, using same. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.

Abstract: A package structure is provided. The package structure includes a chip structure having opposite surfaces with different widths. The chip structure has an inclined sidewall between the opposite surfaces. The package structure also includes a protective layer laterally surrounding the chip structure.

Abstract: Aspects of the disclosure provide semiconductor devices. For example, a semiconductor device includes a substrate having a first region and a second region along a first direction that is parallel to a main surface of the substrate. Then, the semiconductor device includes a memory stack that includes a first stack of alternating gate layers and insulating layers and a second stack of alternating gate layers and insulating layers along a second direction that is perpendicular to the main surface of the substrate. Further, the semiconductor device includes a joint insulating layer in the second region and a third stack of alternating gate layers and insulating layers in the first region between the first stack of alternating gate layers and insulating layers and the second stack of alternating gate layers and insulating layers.

Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor die and surrounding a sidewall of the semiconductor die with a dielectric material. The method further includes forming a post passivation interconnect (PPI) over the semiconductor die and electrically coupling the PPI with the semiconductor die. The method further includes molding the semiconductor die and the PPI into an integrated semiconductor package. The method further includes covering at least a portion of an outer surface of the integrated semiconductor package with a conductive layer, wherein the conductive layer is conformal to the morphology of the portion of the outer surface. Moreover, the method further includes forming a conductive path inside the integrated semiconductor package electrically coupled to the conductive layer and a ground terminal of the integrated semiconductor package.

Abstract: An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

Abstract: The specification provides a method includes: updating a depth value of a target node or a depth value of a downstream node of the target node; receiving a depth value sent by an upstream node of the target node, and comparing the depth value of the target node with the depth value sent by the upstream node of the target node; in response to that the depth value of the target node is less than the depth value sent by the upstream node of the target node, updating the depth value of the target node to the depth value sent by the upstream node of the target node; and in response to that the depth value of the target node is equal to the depth value sent by the upstream node of the target node, determining that a loop exists in a data dependency path including the target node.

Abstract: Provided are a system and a method for positron emission computed tomography (PET) image reconstruction. The method may be implemented on a computing device having at least one processor and at least one storage device, comprising: determining correction data based on original PET data (210); determining reconstruction data to be reconstructed based on the correction data (220); and generating, based on the reconstruction data, one or more of a PET reconstruction image and a PET parametric image (230).

Abstract: A layout routing method includes determining a routing pattern according to a swapping rule, a via pattern, area constraints and pin locations; optimizing swapping in differential pairs according to the routing pattern; extracting features of each routing net to obtain extracted features; using an unsupervised algorithm to generate different routing groups according to the extracted features; and determining a routing order of the routing groups according to complex features of the routing groups.

Abstract: A semiconductor device includes a substrate, a gate structure, a first doped region and a second doped region. The substrate has a plurality of recesses therein. A gate structure covers the plurality of recesses and a surface of the substrate between the plurality of recesses. The gate structure includes a gate dielectric layer and a gate conductive layer. The gate dielectric layer covers bottom surfaces and sidewalls of the plurality of recesses and the surface of the substrate between the plurality of recesses. The gate conductive layer is formed on the gate dielectric layer, fills in the plurality of recesses and covers the surface of the substrate between the plurality of recesses. The first doped region and the second doped region are located at two sides of the gate structure.

Abstract: This invention provides highly attenuated influenza viruses and vaccines. The attenuated viruses and vaccines proliferate well and have high safety factors. The attenuated viruses providing protective immunity from challenge by virus of the same subtype, as well as cross protection against heterologous viruses.

Abstract: A temperature-controlling valve assembly is provided, including: an adjusting member, configured to be screwed within a base of a controlling valve, an end of the adjusting member including a controlling portion, another end of the adjusting member including a receiving hole; an abutting member, slidably disposed in the receiving hole; a first elastic member, abutted between a bottom of the receiving hole and the abutting member to bias the abutting member toward a direction away from the controlling portion; and a blocking member, disposed in the receiving hole, a projection radially projecting inwardly around a periphery of the receiving hole, the blocking member being axially blocked by the projection so that the blocking member is non-disengageable from the receiving hole and the abutting member is blocked by the blocking member and non-disengageable from the receiving hole.

Abstract: This application provides a vehicle DC voltage conversion circuit, including a high voltage battery connected in sequence, a primary-side-bridge module, a resonant module, a transformer module and a secondary-side-output module, wherein the secondary-side-output module includes a first voltage unit outputting a first voltage and a second voltage unit outputting a second voltage. The secondary side winding of the transformer is connected with the first voltage unit and the second voltage unit; The circuit also includes a driver module connected with the original side bridge module. The vehicle DC voltage conversion circuit provided in this application can not only output the first voltage, but also output the second voltage at the same time. It has the advantages of small size, high efficiency, low cost and industrialization, and can be widely used in the vehicle 48V electrical load, such as 48V vehicle electric heating system, 48V vehicle cooling fan, and so on.

Abstract: In a method of manufacturing a semiconductor device a semiconductor wafer is retrieved from a load port. The semiconductor wafer is transferred to a treatment device. In the treatment device, the surface of the semiconductor wafer is exposed to a directional stream of plasma wind to clean a particle from the surface of the semiconductor wafer. The stream of plasma wind is generated by an ambient plasma generator and is directed at an oblique angle with respect to a perpendicular plane to the surface of the semiconductor wafer for a predetermined plasma exposure time. After the cleaning, a photo resist layer is disposed on the semiconductor wafer.

Abstract: A target detection method and apparatus, a radar, and a vehicle are provided, and relate to the field of radar technologies. The method includes: obtaining a signal spectrum based on a received signal of a receive antenna of the radar; reconstructing a received signal corresponding to a target that is in the signal spectrum and that is greater than or equal to a signal strength threshold; eliminating a reconstructed received signal in the signal spectrum to obtain an updated signal spectrum, where the updated signal spectrum represents a signal spectrum that does not include the target; determining, in the updated signal spectrum, a parameter of a target that is greater than or equal to the signal strength threshold; and obtaining at least one of location information or speed information of the determined target based on the determined parameter of the target.

Abstract: A conductive composite film has four layers: (A) a substrate, (B) a silicone based reactive layer, (C) at least one conductive layer and (D) a silicone encapsulant layer, and the silicone based reactive layer is formed from curable organosiloxane composition.

Abstract: A high electron mobility transistor (HEMT) and method for forming the same are disclosed. The high electron mobility transistor has a GaN epi-layer, a source ohmic contact, a drain ohmic contact, a gate structure, a first metal electrode contact and a first passivation layer. The source ohmic contact and the drain ohmic contact are disposed on the epi-layer. The gate structure is disposed on the epi-layer and between the source ohmic contact and the drain ohmic contact. The first metal electrode contact is disposed above the gate structure. The first passivation layer is sandwiched between the first metal electrode contact and the gate structure.

Abstract: The present invention relates to a long-chain dibasic acid with low content of long-chain dibasic acid impurity of shorter carbon chain, to the preparation of a long-chain dibasic acid producing strain by directed evolution of POX gene and homologous recombination, and to the production of a long-chain dibasic acid with low content of long-chain dibasic acid impurity of shorter carbon chain by using the strain. The present invention also relates to a strain containing a mutated promoter, wherein, when a long-chain dibasic acid is produced by fermentation of this strain, the content of the acid impurity of shorter carbon chain in the fermentation product is significantly reduced.

Abstract: A sensing keyswitch including a key body, a key-sensing switch and an enabling switch is provided. The key body includes a key top, and a key driver and an enabler which can move with the key top in the same keystroke cycle. The key-sensing switch electrically connected to a key circuit is in a disabled mode to save power and cannot sense the change of the sensing intensity caused by the movement of the driver. The enabling switch is electrically connected to an enabling circuit, wherein when the enabling switch is triggered by the enabler, the enabling switch outputs an enabling signal through the enabling circuit for enabling the key-sensing switch to enter an enabled mode, so that the key-sensing switch can sense the change of the sensing intensity caused by the movement of the key driver to trigger a key signal.