Abstract: A logic cell structure includes a first portion, a second portion and a third portion. The first portion, arranged to be a first layout of a first semiconductor element, is placed in a first cell row of a substrate area extending in a first direction. The second portion, arranged to be a second layout of a second semiconductor element, is placed in a second cell row of the substrate area. The third portion is arranged to be a third layout of an interconnecting path used for coupling the first semiconductor element and the second semiconductor element. The first, second and third portions are bounded by a bounding box with a height in a second direction and a width in the first direction. Respective centers of the first portion and the second portion are arranged in a third direction different from each of the first direction and the second direction.

Abstract: Photolithography overlay errors are a source of patterning defects, which contribute to low wafer yield. An interconnect formation process that employs a patterning photolithography/etch process with self-aligned interconnects is disclosed herein. The interconnection formation process, among other things, improves a photolithography overlay (OVL) margin since alignment is accomplished on a wider pattern. In addition, the patterning photolithography/etch process supports multi-metal gap fill and low-k dielectric formation with voids.

Abstract: A display device and a manufacturing method thereof are disclosed. The display device includes a base substrate and at least one pixel circuit provided on the base substrate. The pixel circuit includes a driving transistor, a first transistor, and a second transistor; the driving transistor includes a control electrode, a first electrode, and a second electrode; a direction from a first electrode of the first transistor to a second electrode of the first transistor is a first direction, a direction from a first electrode of the second transistor to a second electrode of the second transistor is a second direction, a direction from the first electrode of the driving transistor to the second electrode of the driving transistor is a fourth direction, and at least one of the first direction and the second direction intersects with the fourth direction.

Abstract: Disclosed are a special fertilizer for intercropping maize and peanuts and a cultivation method for maintaining soil organic carbon (SOC) balance, belonging to the technical field of SOC balance. The special fertilizer for intercropping maize and peanuts includes the following raw materials: coated urea, heavy superphosphate, ammonium sulfate, fermented soybean meal, bentonite, sodium molybdate, borax, humic acid, ammonium dihydrogen phosphate, plant ash and zinc sulfate heptahydrate. The cultivation method includes the steps of land selection, land preparation, fertilizing, sowing, field management, and rotation.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: In a method, in response to an interface a computer-implemented analysis assistant initiates a presentation of inefficiency results, determined an efficiency analyzer based on a mapping of a dataflow program to execute on hardware of a computing system. The assistant receives an inefficiency included among the inefficiency results and composes formatted inefficiency results comprising a presentation format of the inefficiency to assist a developer of the dataflow program to interpret the inefficiency. The analysis assistant outputs the formatted inefficiency results to an interface, which can comprise an interface to output the formatted inefficiency results for use by the developer to improve the dataflow program in association with the inefficiency. In implementations the presentation can comprise an interactive presentation with a developer of the dataflow program. A computer program product and a computing system can implement the method.

Abstract: A manufacturing method of a multi-screen display is provided. The manufacturing method includes the following steps. A first panel is provided. A second panel is provided. The first panel and the second panel are spliced. The first color coordinate of the first panel includes a first horizontal coordinate and a first vertical coordinate, and the second color coordinate of the second panel includes a second horizontal coordinate and a second vertical coordinate. The difference between the horizontal coordinate and the second horizontal coordinate is ?x, the difference between the first vertical coordinate and the second vertical coordinate is ?y, and ?x and ?y satisfy the following relationship: ?=arctan(?x/?y), 46 degrees???126 degrees.

Abstract: Disclosed in the present application are switching of a search space set group of a target cell, and a control method and apparatus thereof. In the present application, a terminal is flexibly instructed by means of downlink control signaling carrying a user dedicated instruction to perform search space set group switching, so as to implement search space set group switching for service features of different users and improve the energy-saving performance of the terminal. The method comprises: receiving control signaling that is sent by a network side and carries a user dedicated instruction, the user dedicated instruction being used for instructing a terminal to switch at least one target cell from a current search space set group to a target search space set group; and switching the at least one target cell from the current search space set group to the target search space set group according to the control signaling.

Abstract: A lithography method to pattern a first semiconductor wafer is disclosed. An optical mask is positioned over the first semiconductor wafer. A first region of the first semiconductor wafer is patterned by directing light from a light source through transparent regions of the optical mask. A second region of the first semiconductor wafer is patterned by directing energy from an energy source to the second region, wherein the patterning of the second region comprises direct-beam writing.

Abstract: A keyswitch structure includes a keycap support mechanism and a keycap that is supported by the keycap support mechanism in a vertical direction. The keycap support mechanism includes a base and two supports. The base has two sliding slots. Each sliding slot has an opening in a horizontal direction and an obstruction block at the opening. The horizontal direction is perpendicular to the vertical direction. Each support has a sliding portion and a linkage portion. The sliding portions slide parallel to the horizontal direction in the sliding slots correspondingly. The obstruction block prevents the corresponding sliding portion from disengaging from the corresponding sliding slot. The two linkage portions push against each other in line contact, so that the two supports are mutually driven through the two linkage portions.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: An apparatus for producing silicon carbide crystal is provided and includes a composite structure formed by a plurality of graphite layers and silicon carbide seed crystals, wherein a density or thickness of each layer of graphite is gradually adjusted to reduce a difference of a thermal expansion coefficient and Young's modulus between the graphite layers and silicon carbide. The composite structure can be stabilized on a top portion or an upper cover of a crucible made of graphite, thereby preventing the silicon carbide crystal from falling off.

Abstract: A manufacturing method for low-magnetostrictive oriented silicon steel is provided, wherein the oriented silicon steel comprises a silicon steel substrate and an insulating coating on the surface of the silicon steel substrate. The manufacturing method comprises: performing single-sided laser etching on the silicon steel substrate, wherein the side of the silicon steel substrate, on which single-sided laser etching is performed, is a first surface, and the side opposite to the first surface is a second surface; determining a deflection difference between the first surface and the second surface based on the power of the laser etching, and determining a difference in the amount of the insulating coatings on the first surface and the second surface based on the deflection difference; and forming insulating coatings on the first surface and the second surface.

Abstract: An embodiment of the invention provides a communication apparatus comprising a radio transceiver and a processing circuit. The radio transceiver is configured to transmit or receive wireless signals. The processing circuit is coupled to the radio transceiver and configured to perform operations comprising: performing at least one first service with at least one network; determining to perform at least one second service with a non-terrestrial network (NTN); detecting interference on the NTN caused by at least one first frequency band of the at least one network; configuring the at least one first frequency band according to a desense table in response to the interference; performing the at least one second service with the NTN, after configuring the at least one first frequency band; and reconfiguring the at least one first frequency band, after performing the at least one second service with the NTN.

Abstract: In a method a computer-implemented efficiency analyzer selects operators from an intermediate representation of a dataflow program. The operators are included in a mapping of the operators to hardware of a computing system to execute the dataflow program. Based on the mapping and a description of the hardware, the efficiency analyzer computes an execution metric associated with executing the operators on the hardware. Based on the execution metric and hardware description, the efficiency analyzer determines an inefficiency metric, and based on the inefficiency metric, the efficiency analyzer determines an inefficiency associated with the dataflow program. The computing system to execute the dataflow program can comprise a coarse grain computing system and the hardware can include a reconfigurable processor of the computing system. A computer program product and a computing system to a the dataflow program can implement the method.

Abstract: A method for manufacturing a semiconductor structure includes forming a first interconnect feature in a first dielectric feature, the first interconnect feature including a first conductive element exposed from the first dielectric feature; forming a first cap feature over the first conductive element, the first cap feature including a first cap element which includes a two-dimensional material; forming a second dielectric feature with a first opening that exposes the first cap element; forming a barrier layer over the second dielectric feature while exposing the first cap element from the barrier layer; removing a portion of the first cap element exposed from the barrier layer; and forming a second conductive element in the first opening.

Abstract: A method and a device of transmitting a power saving signal, a method and a device of detecting a power saving signal are provided. A method applied to a base station includes receiving power-saving-signal indication information reported by a first terminal, the power-saving-signal indication information being at least used to indicate that the first terminal supports or does not support reception of the power saving signal; sending the power saving signal to the first terminal when the power-saving-signal indication information indicates that the first terminal supports reception of the power saving signal.

Abstract: A photographing optical lens assembly includes, in order from an object side to an image side along an optical axis, a first lens element, a second lens element, a third lens element, a fourth lens element and a fifth lens element. The first lens element has positive refractive power. The second lens element has negative refractive power. The third lens element has an object-side surface being convex in a paraxial region thereof.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure, the method includes forming a buffer layer over a substrate. An active layer is formed on the buffer layer. A top electrode is formed on the active layer. An etch process is performed on the buffer layer and the substrate to define a plurality of pillar structures. The plurality of pillar structures include a first pillar structure laterally offset from a second pillar structure. At least portions of the first and second pillar structures are spaced laterally between sidewalls of the top electrode.

Abstract: Active cantilever probes having a thin coating incorporated into their design are disclosed. The probes can be operated in opaque and/or chemically harsh environments without the need of a light source or optical system and without being significantly negatively impacted by corrosion. The probes include a substrate that has a cantilever, a thermomechanical actuator associated with the cantilever, a piezoresistive stress sensor disposed on the cantilever, and a thin coating disposed on the cantilever and the piezoresistive stress sensor. The coating is bonded to the substrate, is thermally conductive, and has a low thermal resistance. Further, the thin coating is configured to have little to no impact on one or more of a mass of the active probe, a residual stress of the cantilever, or a stiffness of the active probe. Techniques for performing topography and making other measurements in an opaque and/or chemically harsh environment are also provided.