Abstract: The present disclosure provides NTD developers and corresponding lithography techniques that can overcome resolution, line edge roughness (LER), and sensitivity (RLS) tradeoff barriers particular to extreme ultraviolet (EUV) technologies, thereby achieving high patterning fidelity for advanced technology nodes. An exemplary lithography method includes forming a negative tone resist layer over a workpiece; exposing the negative tone resist layer to EUV radiation; and removing an unexposed portion of the negative tone resist layer in a negative tone developer, thereby forming a patterned negative tone resist layer. The negative tone developer includes an organic solvent having a log P value greater than 1.82. The organic solvent is an ester acetate derivative represented by R1COOR2. R1 and R2 are hydrocarbon chains having four or less carbon atoms. In some implementations, R1, R2, or both R1 and R2 are propyl functional groups, such as n-propyl, isopropyl, or 2-methylpropyl.

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a material layer over a substrate, wherein the material layer is soluble in a solvent; forming a blocking layer on the material layer; and forming a photoresist layer on the blocking layer, wherein the photoresist layer includes a photosensitive material dissolved in the solvent. The method further includes exposing the photoresist layer; and developing the photoresist layer in a developer.

Abstract: Provided is a material composition and method for that includes forming a silicon-based resin over a substrate. In various embodiments, the silicon-based resin includes a nitrobenzyl functional group. In some embodiments, a baking process is performed to cross-link the silicon-based resin. Thereafter, the cross-linked silicon-based resin is patterned and an underlying layer is etched using the patterned cross-linked silicon-based resin as an etch mask. In various examples, the cross-linked silicon-based resin is exposed to a radiation source, thereby de-cross-linking the silicon-based resin. In some embodiments, the de-cross-linked silicon-based resin is removed using an organic solution.

Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes forming an under layer on a substrate; forming a silicon-containing middle layer on the under layer, wherein the silicon-containing middle layer has a thermal base generator (TBG) composite; forming a photosensitive layer on the silicon-containing middle layer; performing an exposing process to the photosensitive layer; and developing the photosensitive layer, thereby forming a patterned photosensitive layer.

Abstract: An OLED display device includes a substrate, an active element array, at least one OLED, a light absorption layer or an optical scattering layer, and an encapsulation plate. The active element array and the OLED are disposed over an upper surface of the substrate. The OLED includes a first electrode, a second electrode, and an organic light-emitting layer. The first electrode is disposed on a side adjacent to the active element array, and the second electrode is opposite to the first electrode. Both the first and second electrodes have a high transmittance and a low reflection in a wavelength range of visible light. The organic light-emitting layer is interposed between the first and second electrodes. The light absorption layer or optical scattering layer is disposed between the OLED and the substrate. The encapsulation plate is disposed over the second electrode.

Abstract: Under layer composition and methods of manufacturing semiconductor devices are disclosed. The method of manufacturing semiconductor device includes the following steps. A layer of an under layer composition is formed, wherein the under layer composition includes a polymeric material and a cross-linker, and the cross-linker includes at least one decomposable functional group. A curing process is performed on the layer of the under layer composition to form an under layer, wherein the cross-linker is crosslinked with the polymeric material to form a crosslinked polymeric material having the at least one decomposable functional group. A patterned photoresist layer is formed over the under layer. An etching process is performed to transfer a pattern of the patterned photoresist layer to the under layer. The under layer is removed by decomposing the decomposable functional group.

Abstract: Under layer composition and methods of manufacturing semiconductor devices are disclosed. The method of manufacturing semiconductor device includes the following steps. A layer of an under layer composition is formed, wherein the under layer composition includes a polymeric material and a cross-linker, and the cross-linker includes at least one decomposable functional group. A curing process is performed on the layer of the under layer composition to form an under layer, wherein the cross-linker is crosslinked with the polymeric material to form a crosslinked polymeric material having the at least one decomposable functional group. A patterned photoresist layer is formed over the under layer. An etching process is performed to transfer a pattern of the patterned photoresist layer to the under layer. The under layer is removed by decomposing the decomposable functional group.

Abstract: A touch panel stackup comprises a substrate, a first conductive element having a first refractive index and forming a plurality of patterns with on or more gaps on the substrate having an address for sensing tactile signals in a first direction and a second direction, a second conductive element having a second refractive index coupled with said plurality of patterns an insulator disposed among said one or more gaps, the second refractive index being substantially the same as said first refractive index.

Abstract: Nucleic acid analogue-guided chemical nuclease systems, methods and compositions, which can manipulate the genome DNA sequence in a sequence-specific manner. The core components that together make up the architecture of the system are: nucleic acid analogues (e.g. Peptide nucleic acids) and bleomycin or its derivatives. Generally speaking, these components are structured such that nucleic acid analogues which recognize specific DNA sequences are conjugated ( covalently) to bleomycin or its derivatives which can cleave the target DNA. This architecture allows the method to sequence-specifically insert or remove DNA sequence from the target DNAs.

Abstract: Provided is a material composition and method for that includes forming a silicon-based resin over a substrate. In various embodiments, the silicon-based resin includes a nitrobenzyl functional group. In some embodiments, a baking process is performed to cross-link the silicon-based resin. Thereafter, the cross-linked silicon-based resin is patterned and an underlying layer is etched using the patterned cross-linked silicon-based resin as an etch mask. In various examples, the cross-linked silicon-based resin is exposed to a radiation source, thereby de-cross-linking the silicon-based resin. In some embodiments, the de-cross-linked silicon-based resin is removed using an organic solution.

Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes forming an under layer on a substrate; forming a silicon-containing middle layer on the under layer, wherein the silicon-containing middle layer has a thermal base generator (TBG) composite; forming a photosensitive layer on the silicon-containing middle layer; performing an exposing process to the photosensitive layer; and developing the photosensitive layer, thereby forming a patterned photosensitive layer.

Abstract: A resist material and methods for forming a semiconductor structure including using the resist material are provided. The method for forming a semiconductor structure includes forming a resist layer over a substrate and exposing a portion of the resist layer to form an exposed portion of the resist layer by performing an exposure process. The method for forming a semiconductor structure further includes developing the resist layer in a developer. In addition, the resist layer is made of a resist material including a photosensitive polymer and a contrast promoter, and a protected functional group of the photosensitive polymer is deprotected to form a deprotected functional group during the exposure process, and a functional group of the contrast promoter bonds to the deprotected functional group of the photosensitive polymer.

Abstract: The present disclosure provides a method for lithography patterning. The method includes coating a bottom layer on a substrate, wherein the bottom layer includes a carbon-rich material; forming a middle layer on the bottom layer, wherein the middle layer has a composition such that its silicon concentration is enhanced to be greater than 42% in weight; coating a photosensitive layer on the middle layer; performing an exposing process to the photosensitive layer; and developing the photosensitive layer to form a patterned photosensitive layer.

Abstract: A touch display is disclosed including a display module, a polarizer disposed on the display module, and a plurality of touch electrodes at least partly coated on the polarizer, wherein the touch electrodes are formed by nano-silver. Since the touch electrodes formed by nano-silver is employed in the display, a multifunctional touch display is provided. A method for making the touch display is also disclosed.

Abstract: An OLED touch display device includes an OLED display and a laminated package component covering the OLED display and including a quarter-wave plate, a liquid crystal polarizer, a first touch sensor layer and a second touch sensor layer. The first touch sensor layer and the second touch sensor layer are configured to cooperatively detect touch events.

Abstract: A touch module and a manufacturing method thereof are disclosed. The touch module includes a substrate, at least one first touch electrode, and at least one second touch electrode. The first touch electrode is embedded into the substrate. The second touch electrode is embedded into the substrate. A height of the first touch electrode relative to a first surface of the substrate is different from a height of the second touch electrode relative to the first surface of the substrate, such that the first touch electrode and the second touch electrode are insulated from each other.

Abstract: The present invention provides a touch panel, including a lower substrate, an organic light-emitting component, disposed on the lower substrate, a nano silver sensing layer, disposed on the organic light emitting component, and an upper substrate, disposed on the nano silver sensing layer.

Abstract: A touch module and a manufacturing method thereof are disclosed. The touch module includes a substrate, at least two first touch electrodes, at least two second touch electrodes, at least one electrode channel, and at least one bridge. All of the first touch electrodes, the second touch electrodes, and the electrode channel are embedded in the substrate. The electrode channel is configured to connect the second touch electrodes to each other. The bridge crosses over the electrode channel, is configured to electrically connect the first touch electrodes to each other. The first touch electrodes and the second touch electrodes are insulated from each other.

Abstract: A method for lithography patterning includes forming a material layer over a substrate; exposing a portion of the material layer to a radiation; and removing the exposed portion of the material layer in a developer, resulting in a patterned material layer. The developer comprises water, an organic solvent, and a basic solute. In an embodiment, the basic solute is less than 30% of the developer by weight.

Abstract: A method of lithography patterning includes forming a resist layer over a substrate and providing a radiation with a first exposure dose to define an opening to be formed in the resist layer. The opening is to have a target critical dimension CD1 after developed by a negativ-tone development (NTD) process. The method further includes exposing the resist layer to the radiation with a second exposure dose less than the first exposure dose and developing the resist layer in a negative-tone development process to remove unexposed portions of the resist layer, resulting in an opening between resist patterns. A critical dimension CD2 of the opening is greater than CD1 by a delta. The method further includes forming an interfacial layer on sidewalls of the resist patterns. The interfacial layer has a thickness that is substantially equal to half of the delta.