Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a first conductive structure disposed over the device, and the first conductive structure includes a first sidewall having a first portion and a second portion. The semiconductor device structure further includes a first spacer layer disposed on the first portion, a second conductive structure disposed adjacent the first conductive structure, and the second conductive structure includes a second sidewall having a third portion and a fourth portion. The semiconductor device structure further includes a second spacer layer disposed on the third portion, and an air gap is formed between the first conductive structure and the second conductive structure. The second portion, the first spacer layer, the fourth portion, and the second spacer layer are exposed to the air gap.

Abstract: An integrated circuit includes a strip structure having a front side and a back side. The integrated circuit includes a gate structure on the front side of the strip structure. The integrated circuit includes an isolation structure surrounding the strip structure. The integrated circuit includes a backside via in the isolation structure. The integrated circuit includes a contact over the strip structure, wherein a first portion of the contact extends into the isolation structure and contacts the backside via. The integrated circuit includes a backside power rail on the back side of the strip structure and in contact with the backside via.

Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes channel members over a backside dielectric feature, a gate structure wrapping around the channel members, an epitaxial feature abutting the channel members, a first isolation feature disposed on a first sidewall of the gate structure and extending through the backside dielectric feature, and a second isolation feature disposed on a second sidewall of the gate structure and extending through the backside dielectric feature. A top surface of the first isolation feature is above a top surface of the second isolation feature.

Abstract: A semiconductor nanostructure and an epitaxial semiconductor material portion are formed on a front surface of a substrate, and a planarization dielectric layer is formed thereabove. A first recess cavity is formed over a gate electrode, and a second recess cavity is formed over the epitaxial semiconductor material portion. The second recess cavity is vertically recessed to form a connector via cavity. A metallic cap structure is formed on the gate electrode in the first recess cavity, and a connector via structure is formed in the connector via cavity. Front-side metal interconnect structures are formed on the connector via structure and the metallic cap structure, and a backside via structure is formed through the substrate on the connector via structure.

Abstract: The present invention provides a method for promoting defecation, comprising administering a composition which includes: a fermentation powder of lactic acid bacteria and a physiologically acceptable excipient, diluent, or carrier. The fermentation powder includes: a fermentation product of lactic acid bacteria, the fermentation product is obtained by incubating lactic acid bacterial strains in a culture medium containing milk, milk powders, casein, soy beans, bean products, or whey, and the lactic acid bacterial strains include: a Lactobacillus salivarius subsp. salicinius AP-32 strain, a Lactobacillus plantarum LPL28 strain, a Lactobacillus acidophilus TYCA06 strain, and a Bifidobacterium longum subsp. infantis BLI-02 strain.

Abstract: A manufacturing method of semiconductor device includes providing a substrate, forming a sacrificial layer on the substrate, forming a resin layer on the sacrificial layer, disposing first chips on the sacrificial layer, and forming a first dielectric layer having trenches and surrounding the first chips, wherein an upper surface of the first dielectric layer and an upper surface of the resin layer are at a same plane.

Abstract: An electronic device is disclosed. The electronic device includes a circuit layer, an electronic element and a thermal conducting element. The electronic element is disposed on the circuit layer and electrically connected to the circuit layer. The thermal conducting element is disposed between the circuit layer and the electronic element. The thermal conducting element is used for performing heat exchange with the electronic element.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a substrate, a source/drain contact disposed over the substrate, a first dielectric layer disposed on the source drain contact, an etch stop layer disposed on the first dielectric layer, and a source/drain conductive layer disposed in the etch stop layer and the first dielectric layer. The structure further includes a spacer structure disposed in the etch stop layer and the first dielectric layer. The spacer structure surrounds a sidewall of the source/drain conductive layer and includes a first spacer layer having a first portion and a second spacer layer adjacent the first portion of the first spacer layer. The first portion of the first spacer layer and the second spacer layer are separated by an air gap. The structure further includes a seal layer.

Abstract: A manufacturing method of a package structure of an electronic device is provided. The manufacturing method includes the following. First, a carrier plate is provided. The carrier plate includes a composite structure and has a first surface and a second surface opposite to each other. Next, an anti-warpage structure is formed on the first surface of the carrier plate. Then, a redistribution structure is formed on the second surface of the carrier plate. When the package structure manufactured with the manufacturing method of the package structure of the electronic device of the disclosure is applied to the electronic device, reliability and/or electrical properties of the electronic device are enhanced.

Abstract: A semiconductor structure (MG) includes a metal gate structure disposed over a semiconductor substrate, a dielectric layer disposed adjacent to the MG, a source/drain (S/D) feature disposed adjacent to the dielectric layer, and a S/D contact disposed over the S/D feature. The S/D contact includes a first metal layer disposed over the S/D feature and a second metal layer disposed on the first metal layer.

Abstract: A semiconductor structure includes an isolation structure, a source or drain region over the isolation structure, a channel layer connecting to the source or drain region, a gate structure over the isolation structure and engaging the channel layer, an isolating layer below the channel layer and the gate structure, a dielectric cap below the isolating layer, and a contact structure having a first portion and a second portion. The first portion of the contact structure extends through the isolation structure, and the second portion of the contact structure extends from the first portion of the contact structure, through the dielectric cap and the isolating layer, and to the source or drain region. The first portion of the contact structure is below the second portion and wider than the second portion.

Abstract: A method includes receiving a substrate having a front surface and a back surface; forming an isolation feature of a first dielectric material in the substrate, thereby defining an active region surrounded by the isolation feature; forming a gate stack on the active regions; forming a first and a second S/D feature on the fin active region; forming a front contact feature contacting the first S/D feature; thinning down the substrate from the back surface such that the isolation feature is exposed; selectively etching the active region, resulting in a trench surrounded by the isolation feature, the second S/D feature being exposed within the trench; forming, in the trench, a liner layer of a second dielectric material being different from the first dielectric material; forming a backside via feature landing on the second S/D feature within the trench; and forming a backside metal line landing on the backside via feature.

Abstract: Embodiments provide for building a global clock tree. In embodiments, an example method includes inserting clock drivers at symmetric locations in one or more hierarchy levels of a plurality of hierarchy levels of an integrated circuit (IC) design. The example method further includes generating one or more routes by routing one or more nets within or across the one or more hierarchy levels of the plurality of hierarchy levels. The example method further includes matching symmetric routes of the one or more routes at each of the one or more hierarchy levels irrespective of a number of physical hierarchies each associated net spans. The example method further includes placing one or more ports at one or more signal entry points where routes of the one or more routes cross physical hierarchy blocks.

Abstract: A thermoset resin for forming parts to be metal plated includes a vat photopolymerization (VPP) thermoset resin and an etchable phase disposed in the VPP thermoset resin. The etchable phase is etched from a surface of a part formed from the VPP thermoset resin such that a plurality of micro-mechanical locking sites is formed on the surface of the part. The etchable phase is at least one of organic particles, organic resins, inorganic particles, and copolymers of the VPP thermoset resin. For example, the etchable phase can be a polybutadiene phase and/or a mineral such as calcium carbonate.

Abstract: A computer-implemented method is provided for creating a photolithographic mask. The method includes, in a model building stage, obtaining lithography polygon coordinates from an input lithography target layout. The method further includes, in the model building stage, obtaining mask polygon coordinates from an input mask layout from a test mask. The method also includes, in the model building stage, obtaining correlated mask to lithography features from the lithography polygon coordinates and the mask polygon coordinates. The method additionally includes, in the model building stage, performing linear regression on the correlated mask to lithography features to obtain a machine learning model for predicting an output mask from an input lithography target design. The method further includes, in an inference stage, predicting a given output mask from a given input lithography target design using the machine learning model.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first conductive structure surrounded by a first dielectric layer and forming a second dielectric layer over the first conductive structure and the first dielectric layer. The method also includes forming a via hole in the second dielectric layer, and the via hole exposes the first conductive structure. The method further includes partially removing the first conductive structure through the via hole to form a recess in the first conductive structure. In addition, the method includes forming a second conductive structure filling the recess and the via hole.

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method, and more particularly to forming via rail and deep via structures to reduce parasitic capacitances in standard cell structures. Via rail structures are formed in a level different from the conductive lines. The via rail structure can reduce the number of conductive lines and provide larger separations between conductive lines that are on the same interconnect level and thus reduce parasitic capacitance between conductive lines.

Abstract: A control system for a vehicle may include one or more processors configured to execute instructions to receive, by one or more modules of the vehicle control system, a request to pair an accessory with the vehicle and determine, by the one or more modules of the vehicle control system, whether the accessory is preconfigured for pairing with the vehicle. In response to determining that the accessory is preconfigured for pairing with the vehicle, the one or more processors are configured to execute instructions to pair, by the one or more modules of the vehicle control system, the accessory with the vehicle and cause, by the one or more modules of the vehicle control system, a display of the vehicle to display a user interface customized for the accessory as paired with the vehicle.

Abstract: A semiconductor device includes a metal gate structure having sidewall spacers disposed on sidewalls of the metal gate structure. In some embodiments, a top surface of the metal gate structure is recessed with respect to a top surface of the sidewall spacers. The semiconductor device may further include a metal cap layer disposed over and in contact with the metal gate structure, where a first width of a bottom portion of the metal cap layer is greater than a second width of a top portion of the metal cap layer. In some embodiments, the semiconductor device may further include a dielectric material disposed on either side of the metal cap layer, where the sidewall spacers and a portion of the metal gate structure are disposed beneath the dielectric material.

Abstract: A semiconductor nanostructure and an epitaxial semiconductor material portion are formed on a front surface of a substrate, and a planarization dielectric layer is formed thereabove. Recess cavities are formed to expose a first active region and the epitaxial semiconductor material portion. A metallic cap structure is formed on the first active region, and a sacrificial metallic material portion is formed on the epitaxial semiconductor material portion. A connector via cavity is formed by anisotropically etching the sacrificial metallic material portion and an underlying portion of the epitaxial semiconductor material portion while the metallic cap structure is masked with a hard mask layer. A connector via structure is formed in the connector via cavity. Front-side metal interconnect structures are formed on the connector via structure and the metallic cap structure, and a backside via structure is formed through the substrate on the connector via structure.