Abstract: A method of high precision printing for manufacturing organic thin film transistor, comprising the following steps of: forming a gate on a substrate; forming an insulator layer on the substrate; forming a conducting wire electrode film on the insulator layer; forming a organic interlayer; forming a organic semiconductor layer on the organic interlayer; forming a polymer layer for channel length on the organic semiconductor layer; forming a organic electrode film; and forming a protective layer. Moreover, a means for forming layers of above mentioned method is a high precision printing selected from the consisting of Inkject Printing, Screen Printing, Blade Coating, Roller Coating, Nanoimprinting, Micro Contact Printing, Flexographic printing, Table coating and Spin Coating, etc.

Abstract: A method for improving vacuum is applicable to a process of fabricating a vacuum display. The residual gas or lightwave heating material in the vacuum display is irradiated with at least one type of light source, such that the residual gas in the vacuum display acquires kinetic energy. Then, the residual gas is efficiently absorbed by a vacuum pump or at least one getter, and thereby the vacuum of the vacuum display is improved.

Abstract: A method for fabricating a device with a flexible substrate includes providing a rigid substrate at first. Next, an interfacing layer can be formed on the rigid substrate, and then a flexible substrate is directly formed on the interfacing layer. The flexible substrate fully contacts the interfacing layer. A device structure is then formed on the flexible substrate.

Abstract: This invention provides an anode plate structure for a flat panel light source of field emission. The structure for the flat panel light source includes an anode plate structure in addition to a known cathode plate structure. The anode plate structure comprises an anode plate and a fluorescent layer formed on the anode plate. The flat panel light source utilizes a cubic-bump structure of the fluorescent layer or a rough surface of the anode plate to increase the lighting areas per unit volume, thereby enhancing the lighting effect of the light source. In the embodiments of the flat panel light source, the rough surface of the anode plate may be formed with a plurality of cubic-bumps, or have a shape of plural concave lenses.

Abstract: A method for fabricating a carbon nanotube field emitter array is disclosed, which has the steps of (a) providing a substrate; (b) forming a cathode layer having a first pattern on the substrate; (c) forming an opaque insulating layer having a second pattern on the substrate, wherein a predetermined part of the cathode layer is exposed; (d) forming a gate layer having the second pattern on the opaque insulating layer; (e) forming a carbon nanotube layer on the entire top surface of the substrate; and (f) exposing the carbon nanotube layer to a light beam coming from the backside of the substrate.

Abstract: A method for fabricating a device with flexible substrate includes providing a rigid substrate. Then, a flexible substrate layer is directly formed on the rigid substrate, wherein the flexible substrate layer fully contacts the rigid substrate and a contact interface is formed. A device structure is formed on the flexible substrate layer. Alternatively, an interfacing layer can be formed on the rigid substrate and then the flexible substrate layer is directly formed on the interfacing layer. Thus, the flexible substrate layer can be stripped from the rigid substrate under a condition substantially without stress.

Abstract: A solar cell and a manufacturing method thereof are provided herein. The solar cell includes a substrate with a first transparent conductive layer, a micro- or nano-roughing structure formed on the first transparent conductive layer, and a semiconductor active layer formed on the micro- or nano-roughing structure and covering the micro- or nano-roughing structure.

Abstract: Electronic devices with hybrid high-k dielectric and fabrication methods thereof. The electronic device includes a substrate. A first electrode is disposed on the substrate. Hybrid high-k multi-layers comprising a first dielectric layer and a second dielectric layer are disposed on the substrate, wherein the first dielectric layer and the second dielectric layer are solvable and substantially without interface therebetween. A second electrode is formed on the hybrid multi-layers.

Abstract: A fabricating method of organic electronic device is provided. The method comprises: providing a flexible substrate; fabricating a plurality of organic elements on the flexible substrate; depositing a spacing material layer on the flexible substrate; patterning the spacing material layer to form a patterned spacing layer; and arranging a cover substrate on the patterned spacing layer, and sealing the edges of the flexible substrate and the cover substrate with a sealant, wherein the patterned spacing layer is used to maintain a space between the flexible substrate and the cover substrate.

Abstract: A fabricating method of organic electronic device is provided. The method comprises: providing a flexible substrate; fabricating a plurality of organic elements on the flexible substrate; depositing a patterned spacing layer on the flexible substrate with a spacing material deposition source and a mask; and arranging a cover substrate on the patterned spacing layer, and sealing the edges of the flexible substrate and the cover substrate with a sealant, wherein the patterned spacing layer is used to maintain a space between the flexible substrate and the cover substrate.

Abstract: An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.

Abstract: An electroluminescent device includes a first electrode layer, a phosphor layer on the first electrode layer, a layer with permanent accumulated charges on the phosphor layer, and a second electrode layer on the layer with permanent accumulated charges. By the addition of the layer with permanent accumulated charges, an external driving voltage applied to the luminescent device can be reduced.

Abstract: A cut filter is used in a backlight module or a display device and positioned over the light source to filter off a part of the light comprising an overlap of at least two of the red light, the green light, and the blue light. By filtering off the overlapping part of light emitted from the light source to obtain a purer primary color light, the display device equipped with a conventional color filter can attain an improved color gamut.

Abstract: A quadrode field emission display is provided, where a low driving voltage is reached by an edge structure, and display in the dark is achieved by adding a sub-gate electrode. With respect to the electrical characteristics that an edge structure may raise the electric field intensity, an edge of a cathode plate through an opening of a gate layer is exposed, thereby forming the edge structure at an emitter to raise the electric field. It also reduces the driving voltage substantially. Therefore, the display in the dark is achieved by adjusting the voltage without changing the structure.

Abstract: A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith.

Abstract: New microfluidic devices, useful for carrying out chemical reactions, are provided. The devices are adapted for on-chip solvent exchange, chemical processes requiring multiple chemical reactions, and rapid concentration of reagents.

Abstract: A method for enhancing the luminance and uniformity of a flat panel light source provides a patterned reflective structure to reflect or deflect the light back onto the display area of a field emission display panel and lighten the area which used to be blocked by spacers. The patterned reflective structure may be designed in several places, such as between an end surface of a spacer and the inner surface of an anode substrate, or on the inner surface of the edges of the side-frame between the anode plate and the cathode plate by further coating a reflective material, or on the side-frames surrounding the panel by further coating a reflective material, etc. With such a patterned reflective structure, the luminance and uniformity of a flat panel light source are enhanced.

Abstract: A method for enhancing the luminance and uniformity of a flat panel light source provides a patterned reflective structure to reflect or deflect the light back onto the display area of a field emission display panel and lighten the area which used to be blocked by spacers. The patterned reflective structure may be designed in several places, such as between an end surface of a spacer and the inner surface of an anode substrate, or on the inner surface of the edges of the side-frame between the anode plate and the cathode plate by further coating a reflective material, or on the side-frames surrounding the panel by further coating a reflective material, etc. With such a patterned reflective structure, the luminance and uniformity of a flat panel light source are enhanced.

Abstract: A method of transferring imprint carbon nano-tube (CNT) field emitting source is disclosed. Firstly, cathode lines are screen printed on a substrate. Then a dielectric layer formation on the cathode lines and substrate is followed. Afterward, gate lines formed on the dielectric layer by screen printing are performed. Next a patterning process is carried out to form openings. Subsequently, an imprint negative mold is dipped with CNT paste and imprinted the CNT paste on the cathode lines through the openings. After drawing of pattern from the imprint mold, the CNT paste is cured by annealing. Since the emitting sources are formed through the imprint negative mold, as a result, the size and shape can be predetermined. Moreover, the intervals between gate line and the emitting source are readily control, which resolve the circuit short problem between gate and cathode. Consequently, the current density, brightness, and uniformity of the emitter sources are significantly improved.

Abstract: An organic semiconductor element having multi protection layers and process of making the same are provided. Firstly, forming a first protection layer on the thin film transistor. Next, forming a second protection layer which is thick enough to serve as the photo spacers on said first protection layer. The multi protection layers are then grown on said organic thin film transistor, so as to enable the second protection layer to have the additional function of the photo spacers by the patterning process. Thus the organic thin film transistor can be prevented from being damaged, and achieving the simplification of the manufacturing process and the reduction of the production cost.