Abstract: A field emission display module. A white field emission display (FED) comprises a plurality of dots (pixels) arranged in matrix, generating different gray levels according to external display data. A color filter display is disposed on the white field emission display, generating color images with the gray levels generated by the white field emission display.

Abstract: A method of forming spacers on a display substrate is described. First, a mould having a plurality of trenches is provided. Spacer are dropped onto the mould. When the mould is vibrated, the spacers fall into the trenches. Then, a display substrate having viscous substance on a surface thereof is pressed onto the spacers in the trenches of the mould, so that the spacers are bonded to the display substrate due to the viscous substance. Finally, the spacers bonded with the display substrate are removed from the trenches of the mould.

Abstract: A method of fabricating an electronic device includes the following steps: a) providing a substrate; b) forming a first strip on the substrate; c) coating an insulation layer on the first strip and the substrate while completely overlaying the first strip and the substrate with the same; d) forming a second strip on the insulation layer; e) forming conductive polymer on the insulation layer while completely overlaying the second strip with the same; f) etching the conductive polymer via plasma etching for completely removing the conductive polymer on the second strip; and g) forming a semiconductor layer on the second strip and the conductive polymer.

Abstract: Disclosed are a method for improving the uniformity of a flat panel light source and the light source thereof. It achieves a diffusion effect by blurring the lighting surface of the light module, thereby makes the outgoing lights more uniform. The blurring process can be performed on the inner or outer surface of a lighting substrate before a flat panel light source is assembled. Otherwise, the blurring process may be performed on an outer surface of an assembled light module. The invention is applicable to a field emission display (FED) back-light or front-light module. The lighting surface of a cathode plate module is blurred for an FED back-light source, and the lighting surface of an anode plate module for an FED front-light source.

Abstract: This invention provides an anode plate structure for a flat panel light source of field emission. The structure for the flat panel light source includes an anode plate structure in addition to a known cathode plate structure. The anode plate structure comprises an anode plate and a fluorescent layer formed on the anode plate. The flat panel light source utilizes a cubic-bump structure of the fluorescent layer or a rough surface of the anode plate to increase the lighting areas per unit volume, thereby enhancing the lighting effect of the light source. In the embodiments of the flat panel light source, the rough surface of the anode plate may be formed with a plurality of cubic-bumps, or have a shape of plural concave lenses.

Abstract: A triode structure of a field emission display and fabrication method thereof. A plurality of cathode layers arranged in a matrix is formed overlying a dielectric layer. A plurality of emitting layers arranged in a matrix is formed overlying the cathode layers, respectively. A plurality of lengthwise-extending gate lines is formed on the dielectric layer, in which each of the gate layers is disposed between two adjacent columns of the cathode layers.

Abstract: A triode structure of a field emission display and fabrication method thereof. A plurality of cathode layers arranged in a matrix is formed overlying a dielectric layer. A plurality of emitting layers arranged in a matrix is formed overlying the cathode layers, respectively. A plurality of lengthwise-extending gate lines is formed on the dielectric layer, in which each of the gate layers is disposed between two adjacent columns of the cathode layers.

Abstract: A structure of a coplanar gate-cathode of triode CNT-FED and a manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, and formed on the substrate by Imprint Lithography and the plurality of dielectric openings are made by Imprint Lithography. The gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.

Abstract: A method for manufacturing TFTs is provided. It can be applied to both inverted staggered and co-planar TFT structures. The manufacturing method for the staggered TFT includes the formation of a gate electrode, a gate insulator, an active channel layer, a drain electrode, and a source electrode on a substrate. It emphasizes the use of metal oxides or II-VI compounds semiconductors and low-temperature CBD process to form the active channel layer. In a CBD process, the active channel layers are selectively deposited on the substrates immersed in the solution through controlling solution temperature and PH value. The invention offers the advantages of low deposition temperature, selective deposition, no practical limit of panel size, and low fabrication cost. Its low deposition temperature allows the use of flexible substrates, such as plastic substrates.

Abstract: A method for fabricating a thin film transistor (TFT) display is provided, wherein the processes of a liquid crystal substrate and an organic thin film transistor (OTFT) substrate are separated. The fabrication of liquid crystal substrate employs the technology of polymer encapsulated liquid crystal molecule, and leaves the polymeric layer as a substrate using a sacrificial layer, so as to improve the flexibility. And the TFT substrate has a high adhesive polymeric protective layer provided on its surface, so as to combine the fabricated TFT substrate and the liquid crystal substrate by laminating. Thereby, the processes of the liquid crystal substrate and the TFT substrate will not affect each other, to improve the process yield and meet the demand for the variety of products.

Abstract: A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith.

Abstract: The present inventions provide a structure of coplanar gate-cathode of triode CNT-FED and the manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, made by forming on the substrate by Imprint Lithography and the plurality of dielectric opening made by Imprint Lithography too. Besides, the gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.

Abstract: A triode field emission display is provided. It utilizes the electrical characteristics that an edge structure may raise the electric field intensity to expose an edge of a cathode plate through an opening of a gate layer, thereby forming the edge structure at an emitter to raise the electric field intensity. Therefore, reduction of driving voltage is achieved.

Abstract: A quadrode field emission display is provided, where a low driving voltage is reached by an edge structure, and display in the dark is achieved by adding a sub-gate electrode. With respect to the electrical characteristics that an edge structure may raise the electric field intensity, an edge of a cathode plate through an opening of a gate layer is exposed, thereby forming the edge structure at an emitter to raise the electric field. It also reduces the driving voltage substantially. Therefore, the display in the dark is achieved by adjusting the voltage without changing the structure.

Abstract: The present invention discloses a multi-passivation layer structure for organic thin-film transistors and a method for fabricating the same by spin coating, inject printing, screen printing and micro-contact on organic thin-film transistors. The multi-passivation layer structure for organic thin-film transistors, comprising: a substrate; a gate layer formed on the substrate; an insulator layer formed on the substrate and the gate layer; an electrode layer formed on the insulator layer; a semiconductor layer formed on the insulator layer and the electrode layer; and a passivation layer formed on the semiconductor layer and the electrode layer, thereby forming a multi-passivation layer structure for organic thin-film transistors.

Abstract: A field emission device includes a first substrate, a second substrate spaced apart from the first substrate, a cathode structure formed between the first substrate and the second substrate for emitting electrons toward the second substrate, a luminescent layer formed between the first substrate and the second substrate for providing light when the electrons impinge thereon, and a reflecting layer formed between the second substrate and the luminescent layer for reflecting the light toward the first substrate.

Abstract: A flexible display device for displaying electronic information has a main body, a small screen, a reel mechanism, a scrolling display and a wrist strap. The screen is disposed on the main body for displaying information. The reel mechanism is disposed on the main body. The scrolling display is rolled and hidden in the main body by the reel mechanism for displaying information, wherein the scrolling display is a CLC display or an OLED display. The wrist strap connects with the main body for securing the main body around a wearer. The scrolling display has a screen puller connected to one side thereof for pulling out the scrolling display. The flexible display device is portable, and usable in a fixed state. In addition, the flexible display is not easily to get lost and lessens abrading of the monitor's surface of the scrolling display from usual wear and tear.

Abstract: A method of improving the magnetic field uniformity of a magnetron sputtering equipment is disclosed. The method includes providing an equipment having a magnetic field generating device and a magnetic field receiving surface; utilizing the equipment multiple times to acquire the magnetic field intensity distribution on the magnetic field receiving surface; preparing a compensation plate corresponding to the magnetic field intensity distribution, such that the area of the compensation plate corresponding to the area of the magnetic field receiving surface with stronger magnetic field has a stronger ferromagnetic property and the area corresponding to the area of the magnetic field receiving surface with weaker magnetic field has a weaker ferromagnetic property; and installing the compensation plate between the magnetic field generating device and the magnetic field receiving surface for improving the magnetic field uniformity of the magnetic field receiving surface.

Abstract: An organic semiconductor device with multiple protective layers and the method of making the same are described. A first protective layer is formed by vapor phase deposition on an organic thin-film transistor. A second protective layer is then formed on the first protective layer. Therefore, the organic thin-film transistor is formed with multiple protective layers. Not only do these protective layers have good homogeneity, they can protect the organic thin-film transistor from damages, ensuring good quality.

Abstract: An organic semiconductor element having multi protection layers and process of making the same are provided. Firstly, forming a first protection layer on the thin film transistor. Next, forming a second protection layer which is thick enough to serve as the photo spacers on said first protection layer. The multi protection layers are then grown on said organic thin film transistor, so as to enable the second protection layer to have the additional function of the photo spacers by the patterning process. Thus the organic thin film transistor can be prevented from being damaged, and achieving the simplification of the manufacturing process and the reduction of the production cost.