Abstract: A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.

Abstract: The invention provides a method of doping impurities that includes a step of doping impurities in a solid base substance by using a plasma doping method, a step of forming a light antireflection layer that functions to reduce light reflection on the surface of the solid base substance, and a step of performing annealing by light radiation. According to the method, it is possible to reduce the reflectance of light radiated during annealing, to efficiently apply energy an impurity doped layer, to improve activation efficiency, to prevent diffusion, and to reduce sheet resistance of the impurity doped layer.

Abstract: A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.

Abstract: An object is to provide a semiconductor device in which uniform properties are intended and high yields are provided. Process steps are provided in which variations are adjusted in doping and annealing process steps that are subsequent process steps so as to cancel in-plane variations in a substrate caused by dry etching to finally as well provide excellent in-plane consistency in a substrate.

Abstract: An object of this invention is to provide a method for making a junction which is simple in the process, high in the throughput, and can make a shallow junction with high accuracy. After the suitable state of a substrate surface adapted to the wavelength of an electromagnetic wave to be applied has been formed, the electromagnetic wave is applied to electrically activate impurities so that the excited energy is effectively absorbed within the impurity thin film, thereby effectively making a shallow junction.

Abstract: A housing (100) includes a housing base (10), a chromium film (12), and a chromium carbide film (14). The housing base is made of a material of metal or metal alloys. The chromium film is formed on a surface of the housing base, and the chromium carbide film is formed on a surface of the chromium film. The present invention also provides a method for making the housing.

Abstract: A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.

Abstract: A method for forming a mask assembly for use in lithography, typically electron-beam lithography, first forms in a substrate one half of a plurality of opening therethrough and then fills the openings with a removable fill material. Thereafter are formed the other half of the openings which are then filled with the removable fill material. After all the openings have been formed and filled, a support membrane is formed over the substrate and covers the filled windows. A mask layer is then formed over the membrane and patterned. The fill is then removed from all of the windows.

Abstract: A container is provided for storing a lithographic printing mask. A first container section is formed of a sturdy material which defines a central inner recess area that is shaped to house a mask and to hold outer edges of a mask without touching a pattern on the mask. A second identical container section is placed against the first container section with a mask housed within recesses of, both to form a container which has a common pressure level all around and therein. A higher pressure level is then applied outside the container causes the first and second sections of the container to be held together. To remove the mask from the container, the pressure outside the container is reduced to substantially the pressure level inside the container and the first and second sections are pulled apart.

Abstract: A method for forming a mask assembly for use in lithography, typically electron-beam lithography, first forms in a substrate one half of a plurality of opening therethrough and then fills the openings with a removable fill material. Thereafter are formed the other half of the openings which are then filled with the removable fill material. After all the openings have been formed and filled, a support membrane is formed over the substrate and covers the filled windows. A mask layer is then formed over the membrane and patterned. The fill is then removed from all of the windows.

Abstract: A method for forming a mask assembly for use in lithography, typically electron-beam lithography, first forms in a substrate one half of a plurality of opening therethrough and then fills the openings with a removable fill material. Thereafter are formed the other half of the openings which are then filled with the removable fill material. After all the openings have been formed and filled, a support membrane is formed over the substrate and covers the filled windows. A mask layer is then formed over the membrane and patterned. The fill is then removed from all of the windows.

Abstract: Within a damascene method for forming a microelectronic fabrication, there is employed an etch stop layer comprising a comparatively low dielectric constant dielectric material sub-layer having formed thereupon a comparatively high dielectric constant dielectric material sub-layer. Within the method there is also simultaneously etched: (1) an anti-reflective coating layer from an inter-metal dielectric layer; and (2) the etch stop layer from a contact region. The microelectronic fabrication is formed with enhanced performance and enhanced reliability.

Abstract: The invention pertains to a process for preparing guaifenesin tannate. The process involves the steps of mixing guaifenesin with tannic acid in the presence of water, continuing to mix the reaction mixture for about 5 minutes to about 4 hours and thereafter removing at least about 80 wt.% of the water by freeze-drying the reaction mixture.

Abstract: A container is provided for storing a lithographic printing mask. A first container section is formed of a sturdy material which defines a central inner recess area that is shaped to house a mask and to hold outer edges of a mask without touching a pattern on the mask. A second identical container section is placed against the first container section with a mask housed within recesses of, both to form a container which has a common pressure level all around and therein. A higher pressure level is then applied outside the container causes the first and second sections of the container to be held together. To remove the mask from the container, the pressure outside the container is reduced to substantially the pressure level inside the container and the first and second sections are pulled apart.

Abstract: Within a damascene method for forming a microelectronic fabrication, there is employed an etch stop layer comprising a comparatively low dielectric constant dielectric material sub-layer having formed thereupon a comparatively high dielectric constant dielectric material sub-layer. Within the method there is also simultaneously etched: (1) an anti-reflective coating layer from an inter-metal dielectric layer; and (2) the etch stop layer from a contact region. The microelectronic fabrication is formed with enhanced performance and enhanced reliability.

Abstract: A container is provided for storing a lithographic printing mask. A first container section is formed of a sturdy material which defines a central inner recess area that is shaped to house a mask and to hold outer edges of a mask without touching a pattern on the mask. A second identical container section is placed against the first container section with a mask housed within recesses of both to form a container which has a common pressure level all around and therein. A higher pressure level is then applied outside the container causes the first and second sections of the container to be held together. To remove the mask from the container, the pressure outside the container is reduced to substantially the pressure level inside the container and the first and second sections are pulled apart.

Abstract: A chemiluminescent composition comprising an oxalate component comprising polystyrene or homopoly-.alpha.-methylstyrene containing an oxalate ester; an activator component comprising a solution of a peroxide compound and a catalyst in a first solvent; and a fluorescer contained in the oxalate component, activator component, or in both the oxalate component and the activator component. The first solvent is preferably a propylene glycol dialkyl ether. The chemiluminescent composition, when activated, permits light to be produced of controllable duration.

Abstract: A process for preparing pure antihistamine tannate compositions. The antihistamine in the form of its free base is contacted with tannic acid in the presence of water for a period of time of about 5 minutes to 4 hours and at a maximum temperature such that not more than about 5 wt. % of the antihistamine tannate will be decomposed. Water is removed from the antihistamine tannate by freeze-drying.

Abstract: Phenylephrine tannate compositions are disclosed wherein the phenylephrine tannate has a minimum purity level of at least 95%. The composition also contains a minor amount of water, but no significant quantities of organic compounds or solvents other than water are present. The phenylephrine tannate will have a density of at least 0.6 g/cc.

Abstract: A chemiluminescent composition comprising an oxalate component comprising an oxalate ester and a solvent, an activator component comprising a peroxide compound and a catalyst and a fluorescer contained in the oxalate component and/or the activator component. The solvent contained in the oxalate component comprises a propylene glycol dihydrocarbyl ether containing one to three propylene moieties and each hydrocarbyl moiety contains up to 8 carbon atoms and is independently selected from the group consisting of straight chain alkyl, branched chain alkyl, cycloalkyl, aryl, alkaryl and aralkyl groups.