Abstract: A method of manufacturing a semiconductor device having metal gate includes providing a substrate having at least a dummy gate, a sacrificial layer covering sidewalls of the dummy gate and a dielectric layer exposing a top of the dummy gate formed thereon, forming a sacrificial layer covering sidewalls of the dummy gate on the substrate, forming a dielectric layer exposing a top of the dummy gate on the substrate, performing a first etching process to remove a portion of the sacrificial layer surrounding the top of the dummy gate to form at least a first recess, and performing a second etching process to remove the dummy gate to form a second recess. The first recess and the second recess construct a T-shaped gate trench.

Abstract: A method for acquiring information, an electric device and an identifier apparatus are described. The electronic device includes a wireless receiving apparatus capable of receiving information from a trigger object, and a display screen, the trigger object includes at least three surfaces each of which has a corresponding wireless communication apparatus. The method includes detecting trigger information from the wireless communication apparatus in the trigger object; determining a first surface among the at least three surfaces corresponding to the trigger information; acquiring first wireless RF information transmitted from the wireless communication apparatus corresponding to the first surface; and determining data information on the first surface corresponding to the first wireless RF information, according to the correspondence between wireless RF information and surface information.

Abstract: A plasma doping apparatus which introduces a predetermined mass flow of gas from a gas supply device into a vacuum chamber while discharging the gas through an exhaust port by a turbo-molecular pump, which is an exhaust device in order to maintain the vacuum chamber under a predetermined pressure by a pressure adjusting valve. A high-frequency power source supplies high-frequency power of 13.56 MHz to a coil disposed in the vicinity of a dielectric window opposite a sample electrode in order to generate an inductively coupled plasma in the vacuum chamber. A sum of an area of an opening of a gas flow-off port opposed to a center portion of the sample electrode is configured to be smaller than that of an area of an opening of the gas flow-off port opposed to a peripheral portion of the sample electrode in order to improve the uniformity.

Abstract: The present invention relates to compounds which are inhibitors of sodium dependent glucose co-transporter-2 (SGLT-2). These compounds are used in the treatment of various disorders, including diabetes, impaired glucose tolerance, insulin resistance, retinopathy, nephropathy, neuropathy, cataracts, hyperglycemia, hyperinsulinemia, hyperchlolesterolemia, elevated blood level of free fatty acids or glycerol, hyperlipidemia, hypertriglyceridemia, obesity, wound healing, tissue ischemia, atherosclerosis, and hypertension. These compounds and compositions are also useful for treating and preventing kidney stones, hyperuricemia, gout, and hyponatremia. Methods of making these compounds are also described in the present invention.

Abstract: A method of manufacturing a semiconductor device having metal gate includes providing a substrate having at least a dummy gate, a sacrificial layer covering sidewalls of the dummy gate and a dielectric layer exposing a top of the dummy gate formed thereon, forming a sacrificial layer covering sidewalls of the dummy gate on the substrate, forming a dielectric layer exposing a top of the dummy gate on the substrate, performing a first etching process to remove a portion of the sacrificial layer surrounding the top of the dummy gate to form at least a first recess, and performing a second etching process to remove the dummy gate to form a second recess. The first recess and the second recess construct a T-shaped gate trench.

Abstract: Interactive method, apparatus and system are provided, which relate to communication field, achieve interaction between an electronic apparatus and an accessory, and improve user experience.

Abstract: A method of identifying a to-be-identified object is described. The to-be-identified object is independent of the electronic device and is placed within a predetermined distance from the electronic device. The method of identifying the to-be-identified object includes the electronic device acquiring status information of the to-be-identified object; the electronic device generating an operation instruction according to the status information of the to-be-identified object; and the electronic device operating according to the operation instruction. The identifying method and its electronic device are capable of enabling users to complete the executing of applications of the electronic device through operating the to-be-identified object, so as to improve experience and enjoyment of users.

Abstract: The present invention relates to novel therapeutics with antibacterial activity, processes for their preparation, and pharmaceutical, veterinary and nutritional compositions containing them as active ingredients. The present invention also relates to uses of the novel therapeutics, for example, as medicants or food additives in the treatment of bacterial infections or to aid body mass gain in a subject.

Abstract: The present invention discloses a method, device and system for interacting, in which first information of each of the external accessories is obtained, it is judged whether the first information of each of the external accessories satisfies a preset first condition, and each of the external accessories is processed according to the preset first condition if the first information of each of the external accessories satisfies the preset first condition, therefore interaction between an electronic device and the accessories is achieved and user experience is improved.

Abstract: An interactive input system comprises a display surface and processing structure communicating with the display surface. The processing structure presents on the display surface at least one graphic object, the graphic object having properties and a respective solution state comprising a value of at least one property. The processing structure in response to gesture input manipulates the value of the at least one property, and provides an indication as to whether the graphic object is in its solution state in response to the application of a predetermined amount of pressure against the display surface in association with the graphic object. A method and computer readable medium are also provided.

Abstract: A method of forming metal gate structure includes providing a substrate; forming a gate dielectric layer, a material layer and a polysilicon layer stacked on the substrate; forming a first mask layer, a second mask layer and a patterned photoresist on the polysilicon layer; removing portions of the second mask layer and the first mask layer to form a hard mask by utilizing the patterned photoresist as an etching mask; removing the patterned photoresist, and next utilizing the hard mask as an etching mask to remove parts of the polysilicon layer and parts of the material layer. Thus, a gate stack is formed. Since the patterned photoresist is removed before forming the gate stack, the gate stack is protected from damages of the photoresist-removing process. The photoresist-removing process does not attack the sidewalls of the gate stack, so a bird's beak effect of the gate dielectric layer is prevent.

Abstract: A method of selectively removing a patterned hard mask is described. A substrate with a patterned target layer thereon is provided, wherein the patterned target layer includes a first target pattern and at least one second target pattern, and the patterned hard mask includes a first mask pattern on the first target pattern and a second mask pattern on the at least one second target pattern. A first photoresist layer is formed covering the first mask pattern. The sidewall of the at least one second target pattern is covered by a second photoresist layer. The second mask pattern is removed using the first photoresist layer and the second photoresist layer as a mask.

Abstract: The present invention relates to zinc porphyrin-based photosensitive dyes, specifically to zinc porphyrin-based photosensitive dyes with green transparency. The photosensitive dyes exhibit high push-pull ability in the zinc porphyrin-based structure, higher absorption and power conversion efficiency. The photosensitive dyes are used in the manufacture of dye-sensitive solar cells.

Abstract: A method of forming metal gate structure includes providing a substrate; forming a gate dielectric layer, a material layer and a polysilicon layer stacked on the substrate; forming a first mask layer, a second mask layer and a patterned photoresist on the polysilicon layer; removing portions of the second mask layer and the first mask layer to form a hard mask by utilizing the patterned photoresist as an etching mask; removing the patterned photoresist, and next utilizing the hard mask as an etching mask to remove parts of the polysilicon layer and parts of the material layer. Thus, a gate stack is formed. Since the patterned photoresist is removed before forming the gate stack, the gate stack is protected from damages of the photoresist-removing process. The photoresist-removing process does not attack the sidewalls of the gate stack, so a bird's beak effect of the gate dielectric layer is prevent.

Abstract: In a plasma doping device according to the invention, a vacuum chamber is evacuated with a turbo-molecular pump as an exhaust device via a exhaust port while a predetermined gas is being introduced from a gas supply device in order to maintain the inside of the vacuum chamber to a predetermined pressure with a pressure regulating valve. A high-frequency power of 13.56 MHz is supplied by a high-frequency power source to a coil provided in the vicinity of a dielectric window opposed to a sample electrode to generate inductive-coupling plasma in the vacuum chamber. A high-frequency power source for supplying a high-frequency power to the sample electrode is provided. Uniformity of processing is enhanced by driving a gate shutter and covering a through gate.

Abstract: A method of manufacturing a metal gate is provided. The method includes providing a substrate. Then, a gate dielectric layer is formed on the substrate. A multi-layered stack structure having a work function metal layer is formed on the gate dielectric layer. An O2 ambience treatment is performed on at least one layer of the multi-layered stack structure. A conductive layer is formed on the multi-layered stack structure.

Abstract: The present invention provides a method of manufacturing semiconductor device having metal gates. First, a substrate is provided. A first conductive type transistor having a first sacrifice gate and a second conductive type transistor having a second sacrifice gate are disposed on the substrate. The first sacrifice gate is removed to form a first trench. Then, a first metal layer is formed in the first trench. The second sacrifice gate is removed to form a second trench. Next, a second metal layer is formed in the first trench and the second trench. Lastly, a third metal layer is formed on the second metal layer wherein the third metal layer is filled into the first trench and the second trench.

Abstract: A method of forming metal gate transistor includes providing a substrate; forming a gate dielectric layer, a work function metal layer and a polysilicon layer stacked on the substrate; forming a hard mask and a patterned photoresist on the polysilicon layer; removing the patterned photoresist, and next utilizing the hard mask as an etching mask to remove parts of the polysilicon layer and parts of the work function metal layer. Thus, a gate stack is formed. Since the patterned photoresist is removed before forming the gate stack, the gate stack is protected from damages of the photoresist-removing process. The photoresist-removing process does not attack the sidewalls of the gate stack, so a bird's beak effect of the gate dielectric layer is prevent.