Abstract: An electronic device includes a first circuit, a second circuit, and a power on control (POC) circuit. The POC circuit includes an enable terminal electrically connected to a first output of the first circuit, a first input terminal electrically connected to a first voltage supply, a second input terminal electrically connected to a second voltage supply, and an output terminal. The second circuit includes a biasing-sensitive circuit, and a logic circuit including a first input terminal electrically connected to a second output of the first circuit, a second input terminal electrically connected to the output of the POC circuit, and an output terminal electrically connected to an enable terminal of the biasing-sensitive circuit.

Abstract: A device includes an error amplifier, a standby current source, a charging current source, a voltage divider, and a first switch. The error amplifier has a negative input terminal and a positive input terminal. The standby current source has a control terminal electrically connected to an output terminal of the error amplifier. The voltage divider has an input terminal electrically connected to an output terminal of the standby current source, and an output terminal electrically connected to the positive input terminal of the error amplifier. The charging current source has a control terminal electrically connected to the output terminal of the error amplifier. The first switch has a first terminal electrically connected to an input terminal of the charging current source, and a second terminal electrically connected to a first power supply node.

Abstract: An electronic device includes a first circuit, a second circuit, and a power on control (POC) circuit. The POC circuit includes an enable terminal electrically connected to a first output of the first circuit, a first input terminal electrically connected to a first voltage supply, a second input terminal electrically connected to a second voltage supply, and an output terminal. The second circuit includes a biasing-sensitive circuit, and a logic circuit including a first input terminal electrically connected to a second output of the first circuit, a second input terminal electrically connected to the output of the POC circuit, and an output terminal electrically connected to an enable terminal of the biasing-sensitive circuit.

Abstract: A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a metal oxide device. The metal oxide device includes first and second doped regions disposed within the substrate and interfacing in a channel region. The first and second doped regions are doped with a first type dopant. The first doped region has a different concentration of dopant than the second doped region. The metal oxide device further includes a gate structure traversing the channel region and the interface of the first and second doped regions and separating source and drain regions. The source region is formed within the first doped region and the drain region is formed within the second doped region. The source and drain regions are doped with a second type dopant. The second type dopant is opposite of the first type dopant.

Abstract: A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a metal oxide device. The metal oxide device includes first and second doped regions disposed within the substrate and interfacing in a channel region. The first and second doped regions are doped with a first type dopant. The first doped region has a different concentration of dopant than the second doped region. The metal oxide device further includes a gate structure traversing the channel region and the interface of the first and second doped regions and separating source and drain regions. The source region is formed within the first doped region and the drain region is formed within the second doped region. The source and drain regions are doped with a second type dopant. The second type dopant is opposite of the first type dopant.

Abstract: A P-type Metal-Oxide-Semiconductor Field Effect Transistor (PMOSFET) includes a gate, a first source/drain region connected to the gate, and a second source/drain region on an opposite side of the gate than the first source/drain region. A first Schottky diode includes a first anode connected to the first source/drain region, and a first cathode connected to a body of the PMOSFET. A second Schottky diode includes a second anode connected to the second source/drain region, and a second cathode connected to the body of the PMOSFET.

Abstract: A power switch includes a control circuit, a cross-coupled amplifier, a first switching circuit coupled between a first output terminal and the first controlled ground terminal, and a second switching circuit coupled between a second output terminal and the second controlled ground terminal. The control circuit is configured to connect the second controlled ground terminal to a ground during a first period that a voltage level at the first output terminal is switched from the ground to a first voltage level and to set the second controlled ground terminal at an elevated ground level during a second period that the voltage level at the first output terminal remains at the first voltage level.

Abstract: A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a metal oxide device. The metal oxide device includes first and second doped regions disposed within the substrate and interfacing in a channel region. The first and second doped regions are doped with a first type dopant. The first doped region has a different concentration of dopant than the second doped region. The metal oxide device further includes a gate structure traversing the channel region and the interface of the first and second doped regions and separating source and drain regions. The source region is formed within the first doped region and the drain region is formed within the second doped region. The source and drain regions are doped with a second type dopant. The second type dopant is opposite of the first type dopant.

Abstract: A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a metal oxide device. The metal oxide device includes first and second doped regions disposed within the substrate and interfacing in a channel region. The first and second doped regions are doped with a first type dopant. The first doped region has a different concentration of dopant than the second doped region. The metal oxide device further includes a gate structure traversing the channel region and the interface of the first and second doped regions and separating source and drain regions. The source region is formed within the first doped region and the drain region is formed within the second doped region. The source and drain regions are doped with a second type dopant. The second type dopant is opposite of the first type dopant.

Abstract: A power switch includes a control circuit, a cross-coupled amplifier, a first switching circuit coupled between a first output terminal and the first controlled ground terminal, and a second switching circuit coupled between a second output terminal and the second controlled ground terminal. The control circuit is configured to connect the second controlled ground terminal to a ground during a first period that a voltage level at the first output terminal is switched from the ground to a first voltage level and to set the second controlled ground terminal at an elevated ground level during a second period that the voltage level at the first output terminal remains at the first voltage level.

Abstract: A method includes performing a first programming operation on a plurality of memory cells in a same programming cycle; and performing a verification operation on the plurality of memory cells to find failed memory cells in the plurality of memory cells, wherein the failed memory cells are not successfully programmed in the first programming operation; and performing a second programming operation on the failed memory cells. Passed memory cells successfully programmed in the first programming operation are not programmed in the second programming operation.

Abstract: A method includes performing a first programming operation on a plurality of memory cells in a same programming cycle; and performing a verification operation on the plurality of memory cells to find failed memory cells in the plurality of memory cells, wherein the failed memory cells are not successfully programmed in the first programming operation; and performing a second programming operation on the failed memory cells. Passed memory cells successfully programmed in the first programming operation are not programmed in the second programming operation.

Abstract: A LED light tube is revealed. The LED light tube includes a tube-shaped heat dissipation base, a printed circuit board and a light cover. The light cover includes an outer light emitting layer, an inner light emitting layer and a hollow part formed by a gap between the inner light emitting layer and the outer light emitting layer. The inner light emitting layer of the light cover presses on the printed circuit board in order to fix the printed circuit board on the tube-shaped heat dissipation base so that there is no need to use any other components for fixing the printed circuit board on the tube-shaped heat dissipation base.

Abstract: A LED light tube and its connector thereof are revealed. Each of two ends of the LED light tube is disposed with a LED light tube connector. The LED light tube connector includes a rotating base, two connector pins, a cover and a housing. The two connector pins are disposed on one end of the rotating base. The rotating base includes a first location adjustment structure and the cover has a second location adjustment structure. The rotating base is mounted in the housing while the cover is fixed on the housing. The rotating base rotates relative to the cover as well as the housing optionally so as to adjust the assembling between the first and the second location adjustment structure. Thus the two connector pins change from a first position to a second position and light from the LED light tube emits in a desired direction.

Abstract: The present invention provides a light emitting diode light tube with two ends respectively having a pair of electrode pins for receiving a first and second AC input voltages. The light tube includes an AC switching power supply including a first input rectifier/filter circuit rectifying/filtering the first AC input voltage to generate a first rectified/filtered voltage, and a power conversion circuit coupled to the first input rectifier/filter circuit, and having a second input rectifier/filter circuit rectifying/filtering the second AC input voltage to generate a second rectified/filtered voltage, wherein the power conversion circuit generates a output voltage in response to the first and second rectified/filtered voltages. The AC switching power supply provides a constant output voltage and current to the LED, which avoids flicker in the LED light tube.

Abstract: A charge pump circuit is provided which includes at least two charge pump stages connected in series with a front charge pump stage having a first transistor for receiving an input voltage and a last charge pump stage having a second transistor for providing an output voltage. The first transistor is configured to operate at a first threshold voltage and the second transistor is configured to operate at a second threshold voltage different than the first threshold voltage.

Abstract: A LED lamp comprises: a lamp base; an illuminating component, mounted on the lamp base, wherein the illuminating component comprises a circuit board and a plurality of LEDs arranged on the circuit board; a lamp shade, mounted on the lamp shade for enclosing the illuminating element, wherein the lamp shade has at least one open area; and at least one waterproof and ventilative element, disposed on the open area for covering the open area; thereby, vapors inside the lamp shade can vacate out of the LED lamp through the waterproof and ventilative element, while external vapors cannot infiltrate into the lamp shade through the waterproof and ventilative element.

Abstract: The elastic clipping structure includes a body unit and an elastic unit. The body unit has a body portion, a clipping portion disposed on a first lateral side of the body portion, and an opening forming on a second lateral side of the body portion. The elastic unit has an elastic body with a U shape. The elastic body is disposed on the body portion, and the elastic body has an abutting portion abutted against the clipping portion and two movable portions passing through the opening. Therefore, the body unit and the elastic unit are mated to each other, so that when two opposite forces are acting on two opposite sides of the elastic unit, the elastic unit is compressed inwards. When the two opposite forces are released from the elastic unit, the elastic unit is restored to its original restriction position by the restriction portion.

Abstract: A charge pump circuit is provided which includes at least two charge pump stages connected in series with a front charge pump stage having a first transistor for receiving an input voltage and a last charge pump stage having a second transistor for providing an output voltage. The first transistor is configured to operate at a first threshold voltage and the second transistor is configured to operate at a second threshold voltage different than the first threshold voltage.

Abstract: A method of embedding the forming of peripheral devices such as HV-LDMOS into the forming of flash memory is presented. A layered structure is formed with a first insulating layer formed on a substrate, and a poly silicon formed on the first insulating layer in the flash memory region. A mask layer is formed. Openings are formed in the flash memory region in the peripheral region. A local oxidation of silicon (LOCOS) is performed to form thick oxides on poly silicon, and a field oxide on silicon substrate respectively. The mask layer is removed. A control gate and a control gate oxide are formed on the thick oxide and the poly silicon. A gate electrode is formed with at least one end residing on a field oxide so that the resulting HV-LDMOS has a high breakdown voltage. Spacers and a source/drain of the flash cells and HV-LDMOSs are then formed.