Patents by Inventor Cheng Huang

Cheng Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11949051
    Abstract: A wavelength conversion member includes a substrate, a phosphor layer, and a ventilated blade. The substrate is configured to rotate based on an axis. The phosphor layer is disposed on the substrate. The ventilated blade is disposed on the substrate and has a pore density between 10 ppi and 500 ppi or a volume porosity between 5% and 95%.
    Type: Grant
    Filed: January 25, 2021
    Date of Patent: April 2, 2024
    Assignee: DELTA ELECTRONICS, INC.
    Inventors: Yen-I Chou, Jih-Chi Li, Wen-Cheng Huang
  • Patent number: 11947150
    Abstract: A backlit-module-embedded illuminated keyswitch structure includes a baseplate, a mask film disposed below the baseplate and having a first coating configured to substantially reflect a light, a light guide sheet disposed at one side of the mask film and having a light source hole, a reflective layer disposed at one side of the light guide sheet opposite to the mask film and having an opening communicating with the light source hole, a top glue configured to connect the mask film and the light guide sheet around the light source hole, and a bottom glue configured to connect the light guide sheet and the reflective layer around the light source hole. The first coating covers the light source hole. In a stacked direction of the mask film, the light guide sheet, and the reflective layer, at least one of the top glue and the bottom glue overlaps the first coating.
    Type: Grant
    Filed: March 30, 2023
    Date of Patent: April 2, 2024
    Assignee: DARFON ELECTRONICS CORP.
    Inventors: Heng-Yi Huang, Hsin-Cheng Ho, Po-Yueh Chou
  • Patent number: 11948987
    Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.
    Type: Grant
    Filed: September 9, 2020
    Date of Patent: April 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Lung-Kun Chu, Mao-Lin Huang, Chung-Wei Hsu, Jia-Ni Yu, Kuo-Cheng Chiang, Kuan-Lun Cheng, Chih-Hao Wang
  • Patent number: 11948796
    Abstract: One or more embodiments described herein relate to selective methods for fabricating devices and structures. In these embodiments, the devices are exposed inside the process volume of a process chamber. Precursor gases are flowed in the process volume at certain flow ratios and at certain process conditions. The process conditions described herein result in selective epitaxial layer growth on the {100} planes of the crystal planes of the devices, which corresponds to the top of each of the fins. Additionally, the process conditions result in selective etching of the {110} plane of the crystal planes, which corresponds to the sidewalls of each of the fins. As such, the methods described herein provide a way to grow or etch epitaxial films at different crystal planes. Furthermore, the methods described herein allow for simultaneous epitaxial film growth and etch to occur on the different crystal planes.
    Type: Grant
    Filed: June 10, 2020
    Date of Patent: April 2, 2024
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yi-Chiau Huang, Chen-Ying Wu, Abhishek Dube, Chia Cheng Chin, Saurabh Chopra
  • Publication number: 20240102959
    Abstract: An IC structure includes a biologically sensitive field-effect transistor (BioBET) in a semiconductor substrate, and a dielectric layer over a backside surface of the semiconductor substrate. The dielectric layer has a sensing well extending through the dielectric layer to a channel region of the BioFET. The IC structure further includes a biosensing film, a plurality of fluid channel walls, and a first heater. The biosensing film lines the sensing well in the dielectric layer. The fluid channel walls are over the biosensing film and define a fluid containment region over the sensing well of the dielectric layer. The first heater is in the semiconductor substrate. The first heater has at least a portion overlapping with the fluid containment region.
    Type: Application
    Filed: November 30, 2023
    Publication date: March 28, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Tung-Tsun CHEN, Yi-Hsing HSIAO, Jui-Cheng HUANG, Yu-Jie HUANG
  • Publication number: 20240105546
    Abstract: A module device on a first substrate includes a power module, a housing, a pair of locking structures. The housing covers the power module. The locking structures are installed on a pair of opposite sides of the housing, and the locking structure includes a main body, a locking ring, a pair of ribs and anchoring portions. The locking ring extends from a side toward an inner side of the main body, and is a double-ring structure, which includes an inner and an outer ring. A first side of the outer ring is connected to the main body, a second side of the outer ring is connected to the inner ring. The ribs extend along a normal direction of the top surface of the main body. The anchoring portions are disposed at the end of the ribs, and an extending direction is perpendicular to an extending direction of the rib.
    Type: Application
    Filed: January 10, 2023
    Publication date: March 28, 2024
    Applicant: Industrial Technology Research Institute
    Inventors: Ji-Yuan Syu, Yuan-Cheng Huang, Yu-Chih Wang
  • Publication number: 20240106040
    Abstract: A cover plate of a cylindrical battery and the cylindrical battery are provided by the present application. The cover plate of the cylindrical battery includes a pole column. A bottom of the pole column is connected with a current collecting plate. The pole column is sleeved with a sealing ring. A first insulating element and a cover slip are sequentially sleeved on an outside of the sealing ring along a vertical direction. The first insulating element insulates the current collecting plate from the cover slip.
    Type: Application
    Filed: October 21, 2022
    Publication date: March 28, 2024
    Applicant: EVE POWER CO., LTD.
    Inventors: Haixu Lu, He Zhao, Liming Huang, Cheng Yang, Yuebin Xu, Wei He
  • Patent number: 11940412
    Abstract: A biosensor system includes an array of biosensors with a plurality of electrodes situated proximate the biosensor. A controller is configured to selectively energize the plurality of electrodes to generate a DEP force to selectively position a test sample relative to the array of biosensors.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Jie Huang, Jui-Cheng Huang, Yi-Hsing Hsiao
  • Patent number: 11938405
    Abstract: An electronic device and a method for detecting abnormal device operation are provided. The method includes: obtaining multiple action events of a movable input device, and each action event including a relative coordinate and a time stamp of the movable input device; generating multiple absolute coordinates based on the relative coordinate of each action event; estimating multiple speed vectors based on the absolute coordinates and the time stamp of each action event; estimating multiple acceleration vectors based on the speed vectors and the time stamp of each action event; and estimating a probability of abnormal operation based on the speed vectors and the acceleration vectors.
    Type: Grant
    Filed: November 8, 2022
    Date of Patent: March 26, 2024
    Assignee: Acer Incorporated
    Inventors: Tien-Yi Chi, Wei-Chieh Chen, Shih-Cheng Huang, Tzu-Lung Chuang
  • Patent number: 11942513
    Abstract: The present disclosure provides a semiconductor structure, including a substrate having a front surface, a first semiconductor layer proximal to the front surface, a second semiconductor layer over the first semiconductor layer, a gate having a portion between the first semiconductor layer and the second semiconductor layer, a spacer between the first semiconductor layer and the second semiconductor layer, contacting the gate, and a source/drain (S/D) region, wherein the S/D region is in direct contact with a bottom surface of the second semiconductor layer, and the spacer has an upper surface interfacing with the second semiconductor layer, the upper surface including a first section proximal to the S/D region, a second section proximal to the gate, and a third section between the first section and the second section.
    Type: Grant
    Filed: January 10, 2022
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Guan-Lin Chen, Kuo-Cheng Chiang, Chih-Hao Wang, Shi Ning Ju, Jui-Chien Huang
  • Patent number: 11942478
    Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a first source/drain epitaxial feature, a second source/drain epitaxial feature disposed adjacent the first source/drain epitaxial feature, a first dielectric layer disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature, a first dielectric spacer disposed under the first dielectric layer, and a second dielectric layer disposed under the first dielectric layer and in contact with the first dielectric spacer. The second dielectric layer and the first dielectric spacer include different materials.
    Type: Grant
    Filed: May 6, 2021
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jui-Chien Huang, Kuo-Cheng Chiang, Chih-Hao Wang, Shi Ning Ju, Guan-Lin Chen
  • Patent number: 11942377
    Abstract: A semiconductor device includes a semiconductor substrate; a plurality of channel regions, including a p-type channel region and an n-type channel region, disposed over the semiconductor substrate; and a gate structure. The gate structure includes a gate dielectric layer disposed over the plurality of channel regions and a work function metal (WFM) structure disposed over the gate dielectric layer. The WFM structure includes an n-type WFM layer over the n-type channel region and not over the p-type channel region and further includes a p-type WFM layer over both the n-type WFM layer and the p-type channel region. The gate structure further includes a fill metal layer disposed over the WFM structure and in direct contact with the p-type WFM layer.
    Type: Grant
    Filed: February 28, 2022
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Lung-Kun Chu, Mao-Lin Huang, Wei-Hao Wu, Kuo-Cheng Chiang
  • Publication number: 20240091893
    Abstract: A mounting frame for being mounted with either one of first and second screwdrivers, includes a main frame, a mounting seat, and first and second mounting plates. The mounting seat has a plate attachment hole set. The first mounting plate has a first seat attachment hole set operable to be connected to the plate attachment hole set, and a first driver attachment hole set for the first screwdriver to be attached thereto. The second mounting plate has a second seat attachment hole set operable to be connected to the plate attachment hole set, and a second driver attachment hole set for the second screwdriver to be attached thereto.
    Type: Application
    Filed: August 16, 2023
    Publication date: March 21, 2024
    Applicant: Jabil Inc.
    Inventors: Harpuneet Singh, Lei Hu, Ying-Chieh Huang, Wei-Hsiu Hsieh, Xiao-Ting Zheng, Chien-Cheng Chu
  • Publication number: 20240093668
    Abstract: A turbine of a power generating system includes a rotary shaft, blades, stoppers and elastic members. Each of the blades includes a connecting side and an active side opposite to the connecting side, and the blades are disposed on the rotary shaft at intervals by a predetermined distance, in which the blades are pivotally connected to the rotary shaft through the connecting sides. The stoppers respectively correspond to the blades and are disposed over the rotary shaft for limiting expansion angles of the blades. Each of the elastic members includes a fixed end and a moving end opposite to the fixed end, and the fixed ends attach to the rotary shaft, and the moving ends respectively attach to the blades. Each of the blades pivots between an expanded position and a closed position.
    Type: Application
    Filed: September 15, 2023
    Publication date: March 21, 2024
    Inventor: Ching-Cheng HUANG
  • Publication number: 20240093373
    Abstract: A method for preparing antibacterial stainless steel by surface alloying includes the steps of coating an infiltration promoter layer on a stainless steel surface, coating an antibacterial metal layer on a surface of the infiltration promoter layer, and performing heat treatment of the stainless steel to diffuse an antibacterial metal into the stainless steel. This method can be applied to various types of stainless steel, and the antibacterial metal can be diffused and quenched into the stainless steel, such that the finally formed surface of the stainless steel has an antibacterial alloy layer with a specific thickness to provide better corrosion resistance and antibacterial ability without changing the advantages and properties of the antibacterial metal or stainless steel substrate, and the thickness and concentration of the antibacterial metal layer, and the parameters for heat treatment can be adjusted to control the chemical composition and thickness of the antibacterial alloy layer.
    Type: Application
    Filed: November 16, 2022
    Publication date: March 21, 2024
    Inventors: WEN-TA TSAI, BERNARD HAOCHIH LIU, ZHI-YAN CHEN, CHONG-CHENG HUANG
  • Publication number: 20240096880
    Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a first channel structure configured to transport charge carriers within a first transistor device and a first gate electrode layer wrapping around the first channel structure. A second channel structure is configured to transport charge carriers within a second transistor device. A second gate electrode layer wraps around the second channel structure. The second gate electrode layer continuously extends from around the second channel structure to cover the first gate electrode layer. A third channel structure is configured to transport charge carriers within a third transistor device. A third gate electrode layer wraps around the third channel structure. The third gate electrode layer continuously extends from around the third channel structure to cover the second gate electrode layer.
    Type: Application
    Filed: November 16, 2023
    Publication date: March 21, 2024
    Inventors: Mao-Lin Huang, Chih-Hao Wang, Kuo-Cheng Chiang, Jia-Ni Yu, Lung-Kun Chu, Chung-Wei Hsu
  • Publication number: 20240092665
    Abstract: A method for treating wastewater containing ertriazole compounds is provided. Hypochlorous acid (HOCl) having a neutral to slightly acidic pH value is added to the wastewater containing triazole compounds for reaction, thereby effectively reacting more than 90% of triazole compounds.
    Type: Application
    Filed: August 31, 2023
    Publication date: March 21, 2024
    Inventors: KUO-CHING LIN, YUNG-CHENG CHIANG, SHR-HAN SHIU, MENG-CHIH CHUNG, YI-SYUAN HUANG
  • Publication number: 20240096895
    Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.
    Type: Application
    Filed: November 29, 2023
    Publication date: March 21, 2024
    Inventors: Jui-Chien Huang, Shih-Cheng Chen, Chih-Hao Wang, Kuo-Cheng Chiang, Zhi-Chang Lin, Jung-Hung Chang, Lo-Heng Chang, Shi Ning Ju, Guan-Lin Chen
  • Publication number: 20240097323
    Abstract: In some examples, a device can include an antenna to emit waves in a radiation pattern having a first beamwidth, a directional radiation control device located in a path of the waves, where the directional radiation control device is to receive the waves from the antenna and is shaped to cause the waves to be directed in a different radiation pattern having a second beamwidth that is larger than the first beamwidth.
    Type: Application
    Filed: September 15, 2022
    Publication date: March 21, 2024
    Inventors: Chin-Hung Ma, Pai-Cheng Huang, Po Chao Chen, Shih-Huang Wu
  • Patent number: D1020049
    Type: Grant
    Filed: November 11, 2022
    Date of Patent: March 26, 2024
    Inventors: Dongjun Ding, Cheng Gong, Weifeng Huang, Wenlong Wu