Patents by Inventor Cheng-Lin Huang

Cheng-Lin Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200411467
    Abstract: A method for forming a chip package structure is provided. The method includes forming a first conductive bump and a first ring-like structure over a chip. The first ring-like structure surrounds the first conductive bump, the first ring-like structure and the first conductive bump are made of a same first material, the chip includes an interconnect structure, and the first ring-like structure is electrically insulated from the interconnect structure and the first conductive bump. The method includes bonding the chip to a substrate through the first conductive bump.
    Type: Application
    Filed: June 27, 2019
    Publication date: December 31, 2020
    Inventors: Sheng-Yao YANG, Ling-Wei LI, Yu-Jui WU, Cheng-Lin HUANG, Chien-Chen LI, Lieh-Chuan CHEN, Che-Jung CHU, Kuo-Chio LIU
  • Publication number: 20200411468
    Abstract: A chip package structure is provided. The chip package structure includes a first substrate. The chip package structure includes a conductive via structure passing through the first substrate. The chip package structure includes a chip over a first surface of the first substrate. The chip package structure includes a barrier layer over a second surface of the first substrate. The chip package structure includes an insulating layer over the barrier layer. The chip package structure includes a conductive pad over the insulating layer and passing through the insulating layer and the barrier layer to connect with the conductive via structure. The chip package structure includes a conductive bump over the conductive pad.
    Type: Application
    Filed: August 17, 2020
    Publication date: December 31, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ling-Wei LI, Jung-Hua CHANG, Cheng-Lin HUANG
  • Patent number: 10861761
    Abstract: Present disclosure provides a method for forming a semiconductor packaged wafer, including providing a semiconductor package having a die on a first side of a wafer, partially molding the die by disposing molding material on the first side of the wafer, a peripheral of the first side is free of molding material at a completion of the partially molding, and bonding the semiconductor package with a carrier from the first side of the wafer. Present disclosure also provides a semiconductor packaged wafer, including a die on a first side of a wafer, a molding encapsulating the die and partially positioning on the first side of the wafer by retracting from a peripheral of the first side of the wafer, and a sealing structure on the peripheral of the first side of the wafer.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: December 8, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Fu-Chen Chang, Cheng-Lin Huang, Wen-Ming Chen, Shih-Yen Chen, Ruei-Yi Tsai, Pin-Yi Hsin
  • Publication number: 20200381407
    Abstract: Structures and formation methods of a chip package are provided. The chip package includes a semiconductor die and a package layer partially or completely encapsulating the semiconductor die. The chip package also includes a conductive feature penetrating through the package layer. The chip package further includes an interfacial layer the interfacial layer continuously surrounds the conductive feature. The interfacial layer is between the conductive feature and the package layer, and the interfacial layer is made of a metal oxide material.
    Type: Application
    Filed: August 17, 2020
    Publication date: December 3, 2020
    Inventors: Jui-Pin Hung, Cheng-Lin Huang, Hsien-Wen Liu, Shin-Puu Jeng
  • Publication number: 20200373267
    Abstract: External electrical connectors and methods of forming such external electrical connectors are discussed. A method includes forming an external electrical connector structure on a substrate. The forming the external electrical connector structure includes plating a pillar on the substrate at a first agitation level affected at the substrate in a first solution. The method further includes plating solder on the external electrical connector structure at a second agitation level affected at the substrate in a second solution. The second agitation level affected at the substrate is greater than the first agitation level affected at the substrate. The plating the solder further forms a shell on a sidewall of the external electrical connector structure.
    Type: Application
    Filed: August 10, 2020
    Publication date: November 26, 2020
    Inventors: Meng-Fu Shih, Chun-Yen Lo, Cheng-Lin Huang, Wen-Ming Chen, Chien-Ming Huang, Yuan-Fu Liu, Yung-Chiuan Cheng, Wei-Chih Huang, Chen-Hsun Liu, Chien-Pin Chan, Yu-Nu Hsu, Chi-Hung Lin, Te-Hsun Pang, Chin-Yu Ku
  • Publication number: 20200373264
    Abstract: An embodiment is a method including depositing a first dielectric layer over a molding compound and a chip and patterning a first opening in the first dielectric layer to expose a contact of the chip. A first metallization layer is deposited over the first dielectric layer and in the first opening, where a portion of the first metallization layer in the first opening has a flat top. A second dielectric layer is deposited over the first metallization layer and the first dielectric layer. A second metallization layer is deposited in a second opening in the second dielectric layer, where the second metallization layer does not have a flat top within the second opening.
    Type: Application
    Filed: August 10, 2020
    Publication date: November 26, 2020
    Inventors: Wan-Ting Shih, Nai-Wei Liu, Jing-Cheng Lin, Cheng-Lin Huang
  • Publication number: 20200350209
    Abstract: An embodiment method includes providing a wafer including a first integrated circuit die, a second integrated circuit die, and a scribe line region between the first integrated circuit die and the second integrated circuit die. The method further includes forming a kerf in the scribe line region and after forming the kerf, using a mechanical sawing process to fully separate the first integrated circuit die from the second integrated circuit die. The kerf extends through a plurality of dielectric layers into a semiconductor substrate.
    Type: Application
    Filed: July 20, 2020
    Publication date: November 5, 2020
    Inventors: Fu-Chen Chang, Cheng-Lin Huang, Wen-Ming Chen
  • Publication number: 20200303275
    Abstract: A package includes a device die, a through-via having a sand timer profile, and a molding material molding the device die and the through-via therein, wherein a top surface of the molding material is substantially level with a top surface of the device die. A dielectric layer overlaps the molding material and the device die. A plurality of redistribution lines (RDLs) extends into the dielectric layer to electrically couple to the device die and the through-via.
    Type: Application
    Filed: June 8, 2020
    Publication date: September 24, 2020
    Inventors: Cheng-Lin Huang, Jung-Hua Chang, Jy-Jie Gau, Jing-Cheng Lin
  • Patent number: 10770427
    Abstract: A method for forming a chip package structure is provided. The method includes forming a conductive via structure in a first substrate. The method includes bonding a chip to a first surface of the first substrate. The method includes forming a barrier layer over a second surface of the first substrate. The method includes forming a first insulating layer over the barrier layer. The method includes forming a conductive pad over the first insulating layer and in the first opening, the second opening, and the third opening. The conductive pad continuously extends from the conductive via structure into the third opening. The method includes forming a conductive bump over the conductive pad in the third opening.
    Type: Grant
    Filed: June 27, 2019
    Date of Patent: September 8, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ling-Wei Li, Jung-Hua Chang, Cheng-Lin Huang
  • Publication number: 20200279750
    Abstract: Some embodiment structures and methods are described. A structure includes an integrated circuit die at least laterally encapsulated by an encapsulant, and a redistribution structure on the integrated circuit die and encapsulant. The redistribution structure is electrically coupled to the integrated circuit die. The redistribution structure includes a first dielectric layer on at least the encapsulant, a metallization pattern on the first dielectric layer, a metal oxide layered structure on the metallization pattern, and a second dielectric layer on the first dielectric layer and the metallization pattern. The metal oxide layered structure includes a metal oxide layer having a ratio of metal atoms to oxygen atoms that is substantially 1:1, and a thickness of the metal oxide layered structure is at least 50 ?. The second dielectric layer is a photo-sensitive material. The metal oxide layered structure is disposed between the metallization pattern and the second dielectric layer.
    Type: Application
    Filed: May 18, 2020
    Publication date: September 3, 2020
    Inventors: Jing-Cheng Lin, Cheng-Lin Huang
  • Patent number: 10748882
    Abstract: Structures and formation methods of a chip package are provided. The chip package includes a semiconductor die and a package layer partially or completely encapsulating the semiconductor die. The chip package also includes a conductive feature penetrating through the package layer. The chip package further includes an interfacial layer the interfacial layer continuously surrounds the conductive feature. The interfacial layer is between the conductive feature and the package layer, and the interfacial layer is made of a metal oxide material.
    Type: Grant
    Filed: September 10, 2018
    Date of Patent: August 18, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jui-Pin Hung, Cheng-Lin Huang, Hsien-Wen Liu, Shin-Puu Jeng
  • Patent number: 10741513
    Abstract: External electrical connectors and methods of forming such external electrical connectors are discussed. A method includes forming an external electrical connector structure on a substrate. The forming the external electrical connector structure includes plating a pillar on the substrate at a first agitation level affected at the substrate in a first solution. The method further includes plating solder on the external electrical connector structure at a second agitation level affected at the substrate in a second solution. The second agitation level affected at the substrate is greater than the first agitation level affected at the substrate. The plating the solder further forms a shell on a sidewall of the external electrical connector structure.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: August 11, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Meng-Fu Shih, Chun-Yen Lo, Cheng-Lin Huang, Wen-Ming Chen, Chien-Ming Huang, Yuan-Fu Liu, Yung-Chiuan Cheng, Wei-Chih Huang, Chen-Hsun Liu, Chien-Pin Chan, Yu-Nu Hsu, Chi-Hung Lin, Te-Hsun Pang, Chin-Yu Ku
  • Patent number: 10741511
    Abstract: An embodiment is a method including depositing a first dielectric layer over a molding compound and a chip and patterning a first opening in the first dielectric layer to expose a contact of the chip. A first metallization layer is deposited over the first dielectric layer and in the first opening, where a portion of the first metallization layer in the first opening has a flat top. A second dielectric layer is deposited over the first metallization layer and the first dielectric layer. A second metallization layer is deposited in a second opening in the second dielectric layer, where the second metallization layer does not have a flat top within the second opening.
    Type: Grant
    Filed: July 29, 2019
    Date of Patent: August 11, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Wan-Ting Shih, Nai-Wei Liu, Jing-Cheng Lin, Cheng-Lin Huang
  • Patent number: 10720360
    Abstract: An embodiment method includes providing a wafer including a first integrated circuit die, a second integrated circuit die, and a scribe line region between the first integrated circuit die and the second integrated circuit die. The method further includes forming a kerf in the scribe line region and after forming the kerf, using a mechanical sawing process to fully separate the first integrated circuit die from the second integrated circuit die. The kerf extends through a plurality of dielectric layers into a semiconductor substrate.
    Type: Grant
    Filed: December 9, 2016
    Date of Patent: July 21, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Fu-Chen Chang, Cheng-Lin Huang, Wen-Ming Chen
  • Patent number: 10699981
    Abstract: A package includes a device die, a through-via having a sand timer profile, and a molding material molding the device die and the through-via therein, wherein a top surface of the molding material is substantially level with a top surface of the device die. A dielectric layer overlaps the molding material and the device die. A plurality of redistribution lines (RDLs) extends into the dielectric layer to electrically couple to the device die and the through-via.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: June 30, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cheng-Lin Huang, Jung-Hua Chang, Jy-Jie Gau, Jing-Cheng Lin
  • Patent number: 10658195
    Abstract: Some embodiment structures and methods are described. A structure includes an integrated circuit die at least laterally encapsulated by an encapsulant, and a redistribution structure on the integrated circuit die and encapsulant. The redistribution structure is electrically coupled to the integrated circuit die. The redistribution structure includes a first dielectric layer on at least the encapsulant, a metallization pattern on the first dielectric layer, a metal oxide layered structure on the metallization pattern, and a second dielectric layer on the first dielectric layer and the metallization pattern. The metal oxide layered structure includes a metal oxide layer having a ratio of metal atoms to oxygen atoms that is substantially 1:1, and a thickness of the metal oxide layered structure is at least 50 ?. The second dielectric layer is a photo-sensitive material. The metal oxide layered structure is disposed between the metallization pattern and the second dielectric layer.
    Type: Grant
    Filed: July 31, 2018
    Date of Patent: May 19, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jing-Cheng Lin, Cheng-Lin Huang
  • Publication number: 20200152506
    Abstract: A method for sawing a semiconductor wafer is provided. The method includes sawing a semiconductor wafer to form a first opening. In addition, the semiconductor wafer includes a dicing tape and a substrate attached to the dicing tape by a die attach film (DAF), and the first opening is formed in an upper portion of the substrate. The method further includes sawing through the substrate and the DAF of the semiconductor wafer from the first opening to form a middle opening under the first opening and a second opening under the middle opening, so that the semiconductor wafer is divided into two dies. In addition, a slope of a sidewall of the middle opening is different from slopes of sidewalls of the first opening and the second opening.
    Type: Application
    Filed: January 13, 2020
    Publication date: May 14, 2020
    Inventors: Yu-Sheng TANG, Fu-Chen CHANG, Cheng-Lin HUANG, Wen-Ming CHEN, Chun-Yen LO, Kuo-Chio LIU
  • Publication number: 20200105654
    Abstract: A method includes receiving a first design for conductive bumps on a first surface of an interposer, the conductive bumps in the first design having a same cross-section area; grouping the conductive bumps in the first design into a first group of conductive bumps in a first region of the first surface and a second group of conductive bumps in a second region of the first surface, where a bump pattern density of the second region is lower than that of the first region; forming a second design by modifying the first design, where modifying the first design includes modifying a cross-section area of the second group of conductive bumps in the second region; and forming the conductive bumps on the first surface of the interposer in accordance with the second design, where after being formed, the first group of conductive bumps and the second group of conductive bumps have different cross-section areas.
    Type: Application
    Filed: June 21, 2019
    Publication date: April 2, 2020
    Inventors: Ling-Wei Li, Cheng-Lin Huang, Min-Tar Liu, Fu-Kang Chiao, Matt Chou, Chun-Yen Lo, Che-Jung Chu, Wen-Ming Chen, Kuo-Chio Liu
  • Patent number: 10535554
    Abstract: A method for sawing a semiconductor wafer is provided. The method includes sawing a semiconductor wafer to form a first opening. In addition, the semiconductor wafer includes a dicing tape and a substrate attached to the dicing tape by a die attach film (DAF), and the first opening is formed in an upper portion of the substrate. The method further includes sawing through the substrate and the DAF of the semiconductor wafer from the first opening to form a middle opening under the first opening and a second opening under the middle opening, so that the semiconductor wafer is divided into two dies. In addition, a slope of a sidewall of the middle opening is different from slopes of sidewalls of the first opening and the second opening.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: January 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Sheng Tang, Fu-Chen Chang, Cheng-Lin Huang, Chun-Yen Lo, Wen-Ming Chen, Kuo-Chio Liu
  • Patent number: 10510605
    Abstract: An embodiment method includes providing a wafer including a first integrated circuit die, a second integrated circuit die, and a scribe line region between the first integrated circuit die and the second integrated circuit die. The method further includes forming a kerf in the scribe line region and after forming the kerf, using a mechanical sawing process to fully separate the first integrated circuit die from the second integrated circuit die. The kerf extends through a plurality of dielectric layers into a semiconductor substrate.
    Type: Grant
    Filed: July 24, 2018
    Date of Patent: December 17, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Fu-Chen Chang, Cheng-Lin Huang, Wen-Ming Chen