Abstract: The present application provides a method of manufacturing a memory device. The method includes steps of providing a semiconductor substrate having an active area disposed over or in the semiconductor substrate, and a first isolation member extending into the semiconductor substrate and disposed adjacent to the active area; disposing an energy-decomposable mask over the semiconductor substrate and the first isolation member; irradiating a portion of the energy-decomposable mask with an electromagnetic radiation; removing the portion of the energy-decomposable mask irradiated with the electromagnetic radiation to form a patterned energy-decomposable mask; removing a portion of the semiconductor substrate exposed through the patterned energy-decomposable mask to form a trench; removing the patterned energy-decomposable mask; and forming a second isolation member within the trench.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a fin, a gate structure positioned on the fin, impurity regions positioned on two sides of the fin, contacts positioned on the impurity regions, and conductive covering layers positioned on the contacts. The conductive covering layers are formed of copper germanide.

Abstract: An optical package structure and a method for manufacturing an optical package structure are provided. The optical package structure includes a sensor, an optical component and a fixing element. The optical component directly contacts the sensor. An interfacial area is defined by a contacting region of the optical component and the sensor. The fixing element is disposed outside of the interfacial area for bonding the optical component and the sensor.

Abstract: The present disclosure provides a semiconductor device structure with a conductive contact and a method for preparing the semiconductor device structure. The semiconductor device structure includes a dielectric layer disposed over a semiconductor substrate; a conductive contact penetrating through the dielectric layer; and a metal oxide layer separating the conductive contact from the dielectric layer, wherein the conductive contact and the metal oxide layer comprise a same metal.

Abstract: The present disclosure provides a semiconductor device structure with a conductive contact and a method for preparing the semiconductor device structure. The semiconductor device structure includes a dielectric layer disposed over a semiconductor substrate; a conductive contact penetrating through the dielectric layer; and a metal oxide layer separating the conductive contact from the dielectric layer, wherein the conductive contact and the metal oxide layer comprise a same metal.

Abstract: A semiconductor device package includes a substrate, a partition structure and a polymer film. The partition structure is disposed on the substrate and defines a space for accommodating a semiconductor device. The polymer film is adjacent to a side of the partition structure distal to the substrate. A first side surface of the polymer film substantially aligns with a first side surface of the partition structure.

Abstract: The present application discloses a semiconductor device with a programmable unit and a method for fabricating the semiconductor device. The semiconductor device includes a substrate comprising a first region and a second region; a first semiconductor element positioned in the first region of the substrate; a second semiconductor element positioned in the first region of the substrate and electrically coupled to the first semiconductor element; and a programmable unit positioned in the second region and electrically connected to the first semiconductor element.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a fin, a gate structure positioned on the fin, impurity regions positioned on two sides of the fin, contacts positioned on the impurity regions, and conductive covering layers positioned on the contacts. The conductive covering layers are formed of copper germanide.

Abstract: This application provides a content recommendation method and apparatus, an electronic device, and a storage medium.

Abstract: An optical package structure and a method for manufacturing an optical package structure are provided. The optical package structure includes a sensor, an optical component and a fixing element. The optical component directly contacts the sensor. An interfacial area is defined by a contacting region of the optical component and the sensor. The fixing element is disposed outside of the interfacial area for bonding the optical component and the sensor.

Abstract: A semiconductor package structure includes an organic substrate having a first surface, a first recess depressed from the first surface, a first chip over the first surface and covering the first recess, thereby defining a first cavity enclosed by a back surface of the first chip and the first recess, and a second chip over the first chip. The first cavity is an air cavity or a vacuum cavity.

Abstract: The present disclosure provides a semiconductor device with a graphene layer and a method for forming the same. The semiconductor device includes a first source/drain region and a second source/drain region disposed in a semiconductor substrate. The semiconductor device also includes a word line structure disposed in the semiconductor substrate and between the first source/drain region and the second source/drain region. The word line structure includes a gate dielectric layer, and a lower electrode layer disposed over the gate dielectric layer. The word line structure also includes an upper electrode layer disposed over the lower electrode layer, and a first graphene layer disposed between the lower electrode layer and the upper electrode layer.

Abstract: The present application discloses a semiconductor device with a programmable unit and a method for fabricating the semiconductor device. The semiconductor device includes a substrate comprising a first region and a second region; a first semiconductor element positioned in the first region of the substrate; a second semiconductor element positioned in the first region of the substrate and electrically coupled to the first semiconductor element; and a programmable unit positioned in the second region and electrically connected to the first semiconductor element.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate including an array area and a peripheral area adjacent to the array area, a first gate structure positioned in the array area, and a second gate structure positioned in the peripheral area. A width of the first gate structure is less than a width of the second gate structure, and a depth of the first gate structure is less than a depth of the second gate structure.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate having a first region and a second region, a first semiconductor element positioned in the first region of the substrate, a second semiconductor element positioned in the first region of the substrate, a bridge conductive unit electrically connected the first semiconductor element and the second semiconductor element, and a programmable unit positioned in the second region and electrically connected to the bridge conductive unit.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate including an array area and a peripheral area adjacent to the array area, a first gate structure positioned in the array area, and a second gate structure positioned in the peripheral area. A width of the first gate structure is less than a width of the second gate structure, and a depth of the first gate structure is less than a depth of the second gate structure.

Abstract: A semiconductor device package includes a substrate, a partition structure and a polymer film. The partition structure is disposed on the substrate and defines a space for accommodating a semiconductor device. The polymer film is adjacent to a side of the partition structure distal to the substrate. A first side surface of the polymer film substantially aligns with a first side surface of the partition structure.

Abstract: An optical film includes at least one light-absorbing film layer and at least one anti-reflection film layer formed on the at least one light-absorbing film layer. A material of the at least one light-absorbing film layer is a mixed powder of chromium metal and SixOy. The x and the y are respectively greater than 0 and positive integers. The disclosure further relates to an optical lens and a lens module. The optical film can reduce the effect of stray light on the imaging quality.

Abstract: A semiconductor package structure includes an organic substrate having a first surface, a first recess depressed from the first surface, a first chip over the first surface and covering the first recess, thereby defining a first cavity enclosed by a back surface of the first chip and the first recess, and a second chip over the first chip. The first cavity is an air cavity or a vacuum cavity.

Abstract: A semiconductor package device comprises a substrate, a light emitter, a light detector and a transparent conductive film. The substrate as a first surface and a second surface opposite to the first surface. The light emitter is disposed on the first surface of the substrate and has a light emission area adjacent to the first surface of the substrate. The light detector is disposed on the first surface of the substrate and has a light receiving area adjacent to the first surface of the substrate. The transparent conducting film is disposed on the second surface of the substrate.