Abstract: A method includes: inspecting a reticle in a reticle pod, the reticle pod including a sealed space to accommodate the reticle, and the reticle pod further comprising a window arranged on an upper surface of the reticle pod, wherein the inspecting is performed through the window; and moving the reticle out of the reticle pod for performing a lithography operation using the reticle.

Abstract: A display apparatus includes a driving backplane, a plurality of light emitting components, a first bank layer and a plurality of scattering particles. The first bank layer is disposed on the driving backplane. The first bank layer has a plurality of first openings and a plurality of oblique surfaces defining the first openings. The light emitting components respectively overlap with the first openings of the first bank layer. The scattering particles are disposed on a plurality of light emitting surfaces of the light emitting components. A plurality of air gaps exist between the scattering particles and the oblique surfaces of the first bank layer.

Abstract: The present invention disclose a medical image-based system for predicting lesion classification and a method thereof. The system comprises a feature data extracting module for providing a raw feature data based on a medical image, and a predicting module for outputting a predicted class and a risk index according to the raw feature data. The predicting module comprises a classification unit for generating the predicted class and a prediction score corresponding thereto according to the raw feature data, and a risk evaluation unit for generating the risk index according to the prediction score. The system provides medical personnels a reference score and a risk index to determine progression of a certain disease.

Abstract: The present invention relates to a method for measuring muscle mass, including: a first selection step, wherein a frame selection information is obtained by using a frame to select a fascia region from a provided computed tomography image under the condition that the window width ranges from 300 HU to 500 HU and the window level ranges from 40 HU to 50 HU, wherein the selected range of the fascia region includes a muscle; and a second selection step, wherein a muscle information of the muscle is obtained by calculating a pixel value in the frame-selected fascia region under the condition that the HU value of the CT image ranges from ?29 HU to 150 HU.

Abstract: An image segmentation method includes the following steps: obtaining a target image; inputting the target image into a machine learning model to obtain an image segmentation parameter value corresponding to the target image; executing an image segmentation algorithm on the target image according to the image segmentation parameter value to obtain an image segmentation result, wherein the image segmentation result is segmenting the target image into object regions; and displaying the image segmentation result. In addition, an electronic device and storage medium using the method are also provided.

Abstract: A sensor device is configured to be disposed on a surface of a side of an object. The sensor device includes a casing, and the casing has a first side that is distant from the object and a second side that is relatively closer to the object. A first induction coil set is disposed on the first side, and a second induction coil set is disposed on the second side. The sensor device further includes a control circuit board. The control circuit board includes a connection line that is electrically connected with the first induction coil set and the second induction coil set, and a microcontroller. When the sensor device is in operation, the microcontroller determines a position change of a metal item on another side of the object according to a physical quantity difference between the first induction coil set and the second induction coil set.

Abstract: A method for controlling QoS (quality of service) associated with an application is provided. The method includes the following steps. Obtaining a predicted throughput of a wireless link associated with a wireless transceiver. Obtaining a currently measured throughput of the wireless link. Calculating a throughput budget of the wireless link based on the predicted throughput and the currently measured throughput. Adjusting at least one of a plurality of QoS-related parameters associated with the application base on the throughput budget.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first diffusion barrier layer made of a dielectric material including a metal element, nitrogen, and oxygen and a first protection layer made of a dielectric material including silicon and oxygen and in direct contact with the top surface of the first diffusion barrier layer. The semiconductor device structure also includes a first thickening layer made of a dielectric material including the metal element and oxygen and in direct contact with the top surface of the first protection layer. A maximum metal content in the first thickening layer is greater than that in the first diffusion barrier layer. The semiconductor device structure further includes a conductive feature surrounded by and in direct contact with the first diffusion barrier layer, the first protection layer, and the first thickening layer.

Abstract: An interactive image marking method is introduced. The interactive image marking method includes the following steps, displaying a target image and at least one marked region in the target image; receiving an interactive signal, where the interactive signal corresponds to a first pixel of the target image; calculating a correlation between the first pixel and pixels of the target image, and determining a correlation range in the target image according to the correlation; editing the marked region according to the correlate range; and displaying the edited marked region. In addition, an electronic device and a recording medium using the method are also introduced.

Abstract: A water supply device (10) and a tube connector structure (2) thereof, which are used for an electronic device (100) having a water inlet (101) and a water outlet (102), are disclosed. The tube connector structure (2) includes a connecting plate (21) and two tube connector plugs (22) passing through and fixed to the connecting plate (21). One of the tube connector plugs (22) is connected with the water inlet (101), and the other one of the tube connector plugs (22) is connected with the water outlet (102). Therefore, advantages of rapid connection and disconnection between the water supply device (10) and the tube connector structure (2) and saving time and labor in assembling may be accomplished.

Abstract: The present disclosure provides an operation method of a PET (positron emission tomography) quantitative localization system, which includes steps as follows. The PET image and the MRI (magnetic resonance imaging) of the patient are acquired; the nonlinear deformation is performed on the MRI and the T1 template to generate deformation information parameters; the AAL (automated anatomical labeling) atlas is deformed to an individual brain space of the patient, so as to generate an individual brain space AAL atlas, where the AAL atlas and the T1 template are in a same space; lateralization indexes of the ROIs of the individual brain space AAL atlas corresponding to the PET image normalized through the gray-scale intensity are calculated; the lateralization indexes are inputted into one or more machine learning models to analyze the result of determining a target.

Abstract: A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for weaker and softer dielectric layer. The insert layer may be applied between two weaker dielectric layers or the insert layer may be used with a single layer of dielectric material. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.

Abstract: The present disclosure provides an operating method of a brain imaging neurological abnormality prediction system, which includes steps as follows. The T1-weighted image and the diffusion-weighted image of the patient are acquired; the image process is performed on the T1-weighted image and the diffusion-weighted image to obtain a smoothed brain standard space infarction image; the smoothed brain standard space infarction image is multiplied by and a weighted image for a post-processing to obtain a post-weight image; the post-weight image is inputted to the deep learning cross validation classification model of transfer learning to predict whether the neurological abnormality occurs within a predetermined period after the patient's brain disease.

Abstract: A device, structure, and method are provided whereby an insert layer is utilized to provide additional support for weaker and softer dielectric layer. The insert layer may be applied between two weaker dielectric layers or the insert layer may be used with a single layer of dielectric material. Once formed, trenches and vias are formed within the composite layers, and the insert layer will help to provide support that will limit or eliminate undesired bending or other structural motions that could hamper subsequent process steps, such as filling the trenches and vias with conductive material.

Abstract: A tunable plasma exclusion zone in semiconductor fabrication is provided. A semiconductor wafer is provided within a chamber of a plasma processing apparatus between a first plasma electrode and a second plasma electrode. A plasma is generated from a process gas within the chamber and an electric field between the first plasma electrode and the second plasma electrode. The plasma is at least partially excluded from an edge region of the semiconductor wafer by a plasma exclusion zone (PEZ) ring within the chamber. The plasma may be tuned toward a center of the semiconductor wafer by electrically coupling an electrode ring of the PEZ ring to a voltage potential.

Abstract: An integrated circuit structure includes a first low-k dielectric layer having a first k value, and a second low-k dielectric layer having a second k value lower than the first k value. The second low-k dielectric layer is overlying the first low-k dielectric layer. A dual damascene structure includes a via with a portion in the first low-k dielectric layer, and a metal line over and joined to the via. The metal line includes a portion in the second low-k dielectric layer.

Abstract: A method includes forming a dummy gate stack over a semiconductor region, forming gate spacers on opposing sides of the dummy gate stack, forming a source/drain region on a side of the dummy gate stack, forming an inter-layer dielectric over the source/drain region, replacing the dummy gate stack with a replacement gate stack, recessing the replacement gate stack to form a recess between the gate spacers, depositing a liner extending into the recess, depositing a masking layer over the liner and extending into the recess, forming an etching mask covering a portion of the masking layer, and etching the inter-layer dielectric to form a source/drain contact opening. The source/drain region is underlying and exposed to the source/drain contact opening. A source/drain contact plug is formed in the source/drain contact opening. A gate contact plug extends between the gate spacers and electrically connecting to the replacement gate stack.

Abstract: A method for manufacturing an extra low-k (ELK) inter-metal dielectric (IMD) layer includes forming a first IMD layer including a plurality of dielectric material layers over a substrate. An adhesion layer is formed over the first IMD layer. An ELK dielectric layer is formed over the adhesion layer. A protection layer is formed over the ELK dielectric layer. A hard mask is formed over the protection layer and is patterned to create a window. Layers underneath the window are removed to create an opening. The removed layers include the protection layer, the ELK dielectric layer, the adhesion layer, and the first IMD layer. A metal layer is formed in the opening.

Abstract: A representative method includes forming a photo-sensitive material over a substrate, and forming a cap layer over the photo-sensitive material, and patterning the cap layer. Using the patterned cap layer, a first portion of the photo-sensitive material is selectively exposed to a pre-selected light wavelength to change at least one material property of the first portion of the photo-sensitive material, while preventing a second portion of the photo-sensitive material from being exposed to the pre-selected light wavelength. One, but not both of the following steps is then conducted: removing the first portion of the photo-sensitive material and forming in its place a conductive element at least partially surrounded by the second portion of the photo-sensitive material, or removing the second portion of the photo-sensitive material and forming from the first portion of the photo-sensitive material a conductive element electrically connecting two or more portions of a circuit.

Abstract: A method for forming a semiconductor device includes receiving a substrate having a first opening and a second opening formed thereon, wherein the first opening has a first width, and the second opening has a second width less than the first width; forming a protecting layer to cover the first opening and expose the second opening; performing a wet etching to widen the second opening with an etchant, wherein the second opening has a third width after the performing of the wet etching, and the third width of the second opening is substantially equal to the first width of the first opening; and performing a photolithography to transfer the first opening and the second opening to a target layer.