Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: A method for rock identification includes the steps of receiving a rock slice image transmitted by an image acquisition device, generating a geometric feature, a mineral feature and a structural feature corresponding to a rock slice based on the rock slice image, and generating an identification result of the rock slice based on the geometric feature, the mineral feature and the structural feature. After the rock slice image is obtained, the rock slice image is subject to feature extraction based on three dimensions, i.e., the geometric feature, the mineral feature and the structural feature, the properties of rock are determined based on multiple dimensional features, and finally the identification result comprising a textual description is generated. After a microscopic visual image corresponding to the rock slice is obtained, feature extraction based on multiple dimensions is performed on the image, and the rock slice is identified with reference to multi-dimensional features.

Abstract: A low power oscillator circuit with temperature compensation is illustrated. A current supply unit of an oscillator used to output an output current which is proportional to a reference current. As the temperature is increased, both a first threshold and the reference current of a unidirectional conduct in the temperature compensation circuit are decreased. Because a delay time of the oscillating signal is proportional to the first threshold voltage, and the delay time is inversely proportional to the reference current, the effects of the first threshold voltage and the reference current on the delay time are canceled, and the delay time of the oscillating signal is not affected by the temperature.

Abstract: Disclosed are a heat dissipation apparatus and an electronic device. The heat dissipation apparatus may include: a cooling component, comprising at least two cooling plates in which a flow channel for containing a working medium is arranged; and a first tube, through which the cooling plates are connected, allowing the flow channels of the cooling plates to be communicated with each other, at least part of the first tube being an extendable corrugated tube.

Abstract: In a driving circuit, a drain of first NMOS transistor receives current with a positive temperature coefficient provided by current source, and a gate of first NMOS transistor and a gate of second NMOS transistor are electrically connected to the drain of first NMOS transistor. A drain and a source of second NMOS transistor respectively receive an input voltage and generate an output voltage for driving a load. Two ends of resistor are respectively electrically connected to a source of first NMOS transistor and an emitter of PNP bipolar junction transistor. A base of PNP bipolar junction transistor is electrically connected to a source of second NMOS transistor, and a collector of PNP bipolar junction transistor is electrically connected to a low voltage. By selecting the resistance value of the resistor, an overdrive voltage or a turned-on resistance value of second NMOS transistor is independent of a temperature variation.

Abstract: A comparator module for an oscillator is disclosed. The comparator module has a function provided by two independent comparators that are combined together to share the same bias current source, so that an operation current of the oscillator may be reduced, and the circuit area and power consumption may be effectively reduced. Further, compared to the conventional design that one of the two comparators compares a first voltage with a reference voltage and the other one of the two comparators compares a second voltage with the reference voltage and the time points at which the first voltage and the second voltage are a logic high level are different, three transistors of the disclosed comparator module are designed into two equivalent differential pairs and share a bias current source.

Abstract: A computer-implemented method for dynamically managing electronic pet care data including hosting a user portal corresponding to at least one user and at least one pet, the user portal including at least one user profile and at least one pet profile, receiving a first data set from a first external system, wherein the first data set includes at least one user identifier and at least one pet identifier, retrieving the at least one user profile and the at least one pet profile based on the at least one user identifier and the at least one pet identifier respectively, updating the at least one pet profile based on the first data set, generating an electronic key based on the at least one user profile and the at least one pet profile, and displaying the electronic key on a user interface of the user portal.

Abstract: An oscillator equipped with a temperature compensation circuit is illustrated. Through the temperature compensation circuit, a transistor of a current mirror circuit of the oscillator which outputs a reference current to a voltage matching circuit is controlled by the temperature compensation voltage. Both of the temperature compensation voltage and a reference current decrease as the temperature rises, and a delay time of the oscillation voltage is proportional to the temperature compensation voltage and inversely proportional to the reference current. Therefore, the effects of temperature on the delay time just cancel each other out. The delay time of the oscillating voltage is related to the frequency of the clock signal. Therefore, if the delay time of the oscillating voltage is not affected by temperature, the frequency of the clock signal will not be affected by temperature.

Abstract: An amplifier circuit has an output stage, a first current source, a second current source, a third current source, a fourth current source, and a voltage clamping voltage. The output stage has a first P-type transistor and a first N-type transistor. The voltage clamping circuit receives a first bias voltage and a second bias voltage, and has a first end and a second end. When a second input current is positive current and the input current is a negative current or a zero current, the first end provides a first clamping voltage greater than the first bias voltage to a gate of the first P-type transistor. When the first input current is positive and the second input current is a negative current or zero current, the second end provides a second clamping voltage lower than the second bias voltage to a gate of the first N-type transistor.

Abstract: A color correction method and a color correction system that executes the color correction method are provided. A correction image is projected on a projection screen based on a predefined value. A single frame of the correction image includes multiple regions. The multiple regions include multiple hue regions with different hues and multiple lightness regions with different lightness corresponding to the hues, or the multiple regions include multiple gray-scales regions with different gray-scales. A captured image is obtained by capturing the projection screen. Optical information of the captured image is detected. The optical information is compared with the predefined value to obtain an uneven color region that does not conform to the predefined value. The uneven color region is adjusted so that the optical information of the uneven color region conforms to the predefined value. The time for color correction can be greatly reduced accordingly.

Abstract: A constant power control circuit driving an external device receiving an input voltage and generating an output voltage is provided. A first conversion circuit converts the voltage difference between the input voltage and the output voltage to generate a charge current. An energy storage circuit is charged during a charging period by the charge current to provide a stored voltage. The charging period is terminated in response to the stored voltage reaching a predetermined voltage. A control circuit adjusts a control signal according to a length of the charging period. A second conversion circuit generates a counting voltage according to the control signal. The counting voltage is inversely proportional to the voltage difference. A third conversion circuit converts the counting voltage into a limitation current. A driving circuit compares the setting current and the limitation current to generate a driving signal and send it to the external device.

Abstract: A semiconductor structure includes a ceramic substrate, a first bonding layer, a second bonding layer, a cavity, and a semiconductor layer. The ceramic substrate includes holes on its surface. The first bonding layer is disposed on the surface of the ceramic substrate, and the second bonding layer is bonded to the first bonding layer. The cavity is disposed above the hole and enclosed by the first bonding layer and the second bonding layer. The semiconductor layer extends over the cavity and is disposed along the surface of the second bonding layer.

Abstract: An amplifier circuit has an output stage, a first current source, a second current source, a third current source, a fourth current source, and a voltage clamping voltage. The output stage has a first P-type transistor and a first N-type transistor. The voltage clamping circuit receives a first bias voltage and a second bias voltage, and has a first end and a second end. When a second input current is positive current and the input current is a negative current or a zero current, the first end provides a first clamping voltage greater than the first bias voltage to a gate of the first P-type transistor. When the first input current is positive and the second input current is a negative current or zero current, the second end provides a second clamping voltage lower than the second bias voltage to a gate of the first N-type transistor.

Abstract: A liquid-cooled plate and a heat dissipation device are disclosed. The liquid-cooled plate includes a single-phase channel and a two-phase channel. First fins are spaced apart in the single-phase channel and second fins are spaced apart in the two-phase channel. The first fins are configured to perform a heat exchange with a liquid-state coolant flowing through the single-phase channel to convert the liquid-state coolant after the heat exchange into a gas-liquid two-phase coolant, and the second fins are configured to perform a heat exchange with a gas-liquid two-phase coolant flowing through the two-phase channel to output a coolant after the heat exchange.

Abstract: A substrate structure and a method for fabricating a semiconductor structure including the substrate structure are provided. The substrate structure includes a substrate, a bow adjustment layer, and a silicon layer. The bow adjustment layer is on the top surface of the substrate. The silicon layer is on the bow adjustment layer. The substrate structure has a total bow value, and the total vow value is from ?20 ?m to ?40 ?m.

Abstract: The invention provides a method and a system for controlling a projector. The control method includes: obtaining a first trigger rule and a first to-be-executed action corresponding to the first trigger rule. The first trigger rule and the first to-be-executed action respectively include at least one of a plurality of combinable elements. The control method includes: determining whether the first trigger rule is satisfied and controlling the projector to execute the first to-be-executed action when the first trigger rule is determined as being satisfied. The control system includes a projector and a control device configured to execute the control method. The control method and system of the invention provide more diverse and flexible rules and action generation mechanisms, thereby implementing effects of product differentiation and intelligent operation.

Abstract: This invention concerns chemically defined haematopoietic induction media that support the differentiation of haemogenic endothelial cells (HECs) into haematopoietic progenitor cells (MFCs) that are capable of further differentiation into T cells. The media may (a) stimulate cKIT receptor and/or cKIT receptor mediated signalling pathways and/or (b) stimulate VEGFR and/or VEGFR mediated signalling pathways. For example, the medium may comprise SCF and VEGF. In some embodiments, the media may further (c) stimulate MPL or MPL mediated signalling pathways; (d) stimulate FLT3 or FLT3 mediated signalling pathways (e) stimulate IGF1R or IGF1R mediated signalling pathways and (f) display interleukin (IL) activity. For example, the medium may further comprise Thrombopoietin (TPO), Fits ligand (FltSL), IGF-1, IL-3, IL-6 and optionally IL-7. These media may be useful for example in the production of blood cells or use in immunotherapy.

Abstract: This invention relates to the production of a population of haemogenic progenitor cells by (i) differentiating a population of induced pluri potent stem cells (IPSCs) into mesoderm cells and; (II) differentiating the mesoderm cells to produce a population of haemogenic progenitor cells. Steps (i) and (ii) are performed without purification or isolation of cells in the population. In addition, the haemogenic progenitor cells may be produced without the use of serum or stromal co-culture. Methods of the invention may be useful for example, in the production of clinical grade blood cells, such as T cells, for use in immunotherapy.

Abstract: An outer rotor direct drive motor with a position encoder includes an outer rotor and a stator disposed in the outer rotor, wherein the stator includes: a stator chassis; a stator printed circuit board disposed on an side of the stator chassis, at least an excitation coil and a receiving coil being printed at the stator printed circuit board; and a stator winding disposed on the stator printed circuit board; wherein the outer rotor changes a coupling strength between the excitation coil and the receiving coil. The present invention has the following advantages: the installation method is flexible, and supports through-shaft installation without occupying too much space of the motor body; the sensor structure is stable, the rotor scale area and the induction coil are all printed on the printed circuit board, even in the case where the rotational speed is too fast, deformation or cracking will not be occurred.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.