Abstract: A voltage converting apparatus includes a comparison circuit, a compensation signal generator, and a voltage converter. The comparison circuit generates a comparison result according to an output voltage, an input voltage, and a compensated feedback signal. The compensation signal generator provides a compensation signal held to be equal to a reference voltage at a first time interval in an enable period in a working cycle and sets the compensation signal to be a ramp signal at a second time interval in the enable period. The compensation signal generator generates the compensated feedback signal according to a feedback signal and the compensation signal. The voltage converter generates a control signal according to the comparison result, performs a voltage converting operation through an inductor according to the control signal, and generates the output voltage. The feedback signal is generated according to a current on the inductor.

Abstract: A substrate structure and a method for fabricating a semiconductor structure including the substrate structure are provided. The substrate structure includes a substrate, a bow adjustment layer, and a silicon layer. The bow adjustment layer is on the top surface of the substrate. The silicon layer is on the bow adjustment layer. The substrate structure has a total bow value, and the total vow value is from ?20 ?m to ?40 ?m.

Abstract: A constant power control circuit driving an external device receiving an input voltage and generating an output voltage is provided. A first conversion circuit converts the voltage difference between the input voltage and the output voltage to generate a charge current. An energy storage circuit is charged during a charging period by the charge current to provide a stored voltage. The charging period is terminated in response to the stored voltage reaching a predetermined voltage. A control circuit adjusts a control signal according to a length of the charging period. A second conversion circuit generates a counting voltage according to the control signal. The counting voltage is inversely proportional to the voltage difference. A third conversion circuit converts the counting voltage into a limitation current. A driving circuit compares the setting current and the limitation current to generate a driving signal and send it to the external device.

Abstract: A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a substrate and a seed layer on the substrate. The substrate includes a base and a composite layer encapsulating the base. The semiconductor structure also includes an epitaxial layer on the seed layer. The semiconductor structure also includes a semiconductor device on the epitaxial layer, and an interlayer dielectric layer on the epitaxial layer. The interlayer dielectric layer covers the semiconductor device. The semiconductor structure further includes a via structure that penetrates at least the composite layer of the substrate and is in contact with the base.

Abstract: A color correction method and a color correction system that executes the color correction method are provided. A correction image is projected on a projection screen based on a predefined value. A single frame of the correction image includes multiple regions. The multiple regions include multiple hue regions with different hues and multiple lightness regions with different lightness corresponding to the hues, or the multiple regions include multiple gray-scales regions with different gray-scales. A captured image is obtained by capturing the projection screen. Optical information of the captured image is detected. The optical information is compared with the predefined value to obtain an uneven color region that does not conform to the predefined value. The uneven color region is adjusted so that the optical information of the uneven color region conforms to the predefined value. The time for color correction can be greatly reduced accordingly.

Abstract: A substrate structure and a method for fabricating a semiconductor structure including the substrate structure are provided. The substrate structure includes a substrate, a bow adjustment layer, and a silicon layer. The bow adjustment layer is on the top surface of the substrate. The silicon layer is on the bow adjustment layer. The substrate structure has a total bow value, and the total vow value is from ?20 ?m to ?40 ?m.

Abstract: A wafer image capturing apparatus, including a loud/unload system, at least one imaging station and a conveying device, are provided. The loud/unload system contains a plurality of wafers. The at least one imaging includes a platform and an image capturing device. The conveying device includes a movable component for moving the wafer to a platform of at least one imaging station. An image capturing device is configured to capture an image of the wafer. A method for image capturing is also provided, including: operating a conveying device to pick a wafer from a load/unload system and move the wafer to at least one imaging station; and operating at least one image capturing device to capture an image from above or below the imaging station. Thus, the flexibility and efficiency of wafer image capturing can be improved.

Abstract: An image calibration method for imaging system is provided, including: specifying a detection area located in an image capture scope and the detection area having a unit to be tested; capturing a detection image respectively when the detection area is located in at least two locations within the image capture scope; combining the plurality of detection images and calculating to obtain a calibration figure; and applying the calibration figure to a captured image to complete the calibration. In this way, the calibration figure that adapt to the luminescent type and size of the unit to be tested can be obtained.

Abstract: A high speed signal drive circuit includes a D-PHY drive signal generation module, a C-PHY drive signal generation module, a drive signal selection module and a multiplex drive module. An output terminal of the D-PHY drive signal generation module and an output terminal of the C-PHY drive signal generation module are both connected to an input terminal of the drive signal selection module. An output terminal of the drive signal selection module is connected to an input terminal of the multiplex drive module. The drive signal selection module controls control switches of the multiplex drive module to be on and off based on a D-PHY drive signal or a C-PHY drive signal, so that the multiplex drive module functions as a D-PHY drive circuit or a C-PHY drive circuit. Thus, dual functions of the D-PHY drive circuit and the C-PHY drive circuit can be realized.

Abstract: A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a substrate and a seed layer on the substrate. The substrate includes a base and a composite layer encapsulating the base. The semiconductor structure also includes an epitaxial layer on the seed layer. The semiconductor structure also includes a semiconductor device on the epitaxial layer, and an interlayer dielectric layer on the epitaxial layer. The interlayer dielectric layer covers the semiconductor device. The semiconductor structure further includes a via structure that penetrates at least the composite layer of the substrate and is in contact with the base.

Abstract: The invention provides a method and a system for controlling a projector. The control method includes: obtaining a first trigger rule and a first to-be-executed action corresponding to the first trigger rule. The first trigger rule and the first to-be-executed action respectively include at least one of a plurality of combinable elements. The control method includes: determining whether the first trigger rule is satisfied and controlling the projector to execute the first to-be-executed action when the first trigger rule is determined as being satisfied. The control system includes a projector and a control device configured to execute the control method. The control method and system of the invention provide more diverse and flexible rules and action generation mechanisms, thereby implementing effects of product differentiation and intelligent operation.

Abstract: An outer rotor direct drive motor with a position encoder includes an outer rotor and a stator disposed in the outer rotor, wherein the stator includes: a stator chassis; a stator printed circuit board disposed on an side of the stator chassis, at least an excitation coil and a receiving coil being printed at the stator printed circuit board; and a stator winding disposed on the stator printed circuit board; wherein the outer rotor changes a coupling strength between the excitation coil and the receiving coil. The present invention has the following advantages: the installation method is flexible, and supports through-shaft installation without occupying too much space of the motor body; the sensor structure is stable, the rotor scale area and the induction coil are all printed on the printed circuit board, even in the case where the rotational speed is too fast, deformation or cracking will not be occurred.

Abstract: A substrate structure and a method for fabricating a semiconductor structure including the substrate structure are provided. The substrate structure includes a substrate, a bow adjustment layer, and a silicon layer. The bow adjustment layer is on the top surface of the substrate. The silicon layer is on the bow adjustment layer. The substrate structure has a total bow value, and the total vow value is from ?20 ?m to ?40 ?m.

Abstract: A cascade complementary source follower and a controlling circuit are provided. The source follower circuit includes: a source follower circuit including at least two MOS transistors, and a feedback circuit configured to clamp a voltage on a MOS transistor that provides an output voltage in the source follower circuit and to change a gate-source voltage of the MOS transistor by adjusting a bias current supplied to the MOS transistor, so that an output voltage can precisely follow an input voltage.

Abstract: A circuit for generating differential reference voltages, a circuit for detecting a signal peak, and an electronic device. In the circuit for generating reference voltages, a common-mode extraction circuit receives a first differential signal and a second differential signal, extracts a common-mode level from the first differential signal and the second differential signal, and applies the common-mode level to a non-inverting input terminal of a first operational amplifier. The first operational amplifier, a main control switch, a first voltage dividing resistor, a second voltage dividing resistor, and a first direct current power source constitute a feedback loop, to generate differential reference voltages matching with the common-mode level. Adjusting a current provided by the first direct current power source can change the differential reference voltages, obtaining a reference for to-be-detected amplitude of the signals.

Abstract: A semiconductor structure, a high electron mobility transistor (HEMT), and a method for fabricating a semiconductor structure are provided. The semiconductor structure includes a substrate, a flowable dielectric material pad layer, a reflow protection layer, and a GaN-based semiconductor layer. The substrate has a pit exposed from a top surface of the substrate. The flowable dielectric material pad layer is formed in the pit, and a top surface of the flowable dielectric material pad layer is below the top surface of the substrate. The reflow protection layer is formed on the substrate and the top surface of the flowable dielectric material pad layer. The GaN-based semiconductor layer is disposed over the substrate.

Abstract: A vehicle dashboard structure is provided. A steering unit of a vehicle is provided with a screen-included dashboard. The screen-included dashboard includes a screen-based display zone, which is operable to display different message modes. The steering unit includes a steering grip, which is provided with a control operator seat, which is provided with a control operator module that is operable to control the screen-based display zone for switching of the different message displaying mode. As such, one the one hand, switching of the display mode contents of the screen-based display zone is made easy to ensure riding safety of a rider, and on the other hand, the space of the control operator seat that is provided on the steering grip can be better used.

Abstract: A switch circuit and a high-speed multiplexer-demultiplexer are provided. The switch circuit includes an equalization module and an MOS transistor. A gate of the first MOS transistor is connected to an output terminal of the equalization module. An input terminal of the first MOS transistor is connected to a signal source. An output terminal of the first MOS transistor is connected to a subsequent circuit. The equalization module is configured to: supply a turning-on signal to the first MOS transistor in a case that an operation signal is acquired, to turn on the first MOS transistor; and generate a compensation signal for compensating an attenuation of the signal transmitted through the first MOS transistor, and apply the compensation signal to the gate of the first MOS transistor. The switch circuit operates in response to the operation signal.

Abstract: A voltage converting apparatus includes a comparison circuit, a compensation signal generator, and a voltage converter. The comparison circuit generates a comparison result according to an output voltage, an input voltage, and a compensated feedback signal. The compensation signal generator provides a compensation signal held to be equal to a reference voltage at a first time interval in an enable period in a working cycle and sets the compensation signal to be a ramp signal at a second time interval in the enable period. The compensation signal generator generates the compensated feedback signal according to a feedback signal and the compensation signal. The voltage converter generates a control signal according to the comparison result, performs a voltage converting operation through an inductor according to the control signal, and generates the output voltage. The feedback signal is generated according to a current on the inductor.

Abstract: A high speed signal drive circuit includes a D-PHY drive signal generation module, a C-PHY drive signal generation module, a drive signal selection module and a multiplex drive module. An output terminal of the D-PHY drive signal generation module and an output terminal of the C-PHY drive signal generation module are both connected to an input terminal of the drive signal selection module. An output terminal of the drive signal selection module is connected to an input terminal of the multiplex drive module. The drive signal selection module controls control switches of the multiplex drive module to be on and off based on a D-PHY drive signal or a C-PHY drive signal, so that the multiplex drive module functions as a D-PHY drive circuit or a C-PHY drive circuit. Thus, dual functions of the D-PHY drive circuit and the C-PHY drive circuit can be realized.