Abstract: An image matching method is utilized for performing a stereo matching from a first image block to a second image block in a stereo matching system. The image matching method includes performing a matching computation from the first image block to the second image block according to a first matching algorithm to generate a first matching result; performing the matching computation between the first image block and the second image block according to a second matching algorithm to generate a second matching result and a third matching result; obtaining a matching error and a matching similarity of the first image block according to the second matching result and the third matching result; and determining a stereo matching result of the first image block according to the matching error and the matching similarity.

Abstract: A method for manufacturing large-area organic solar cells utilizes a hot solvent vapor annealing manufacturing process while manufacturing the organic solar cells via a large-area proceeding method, such as spraying. Namely, a heated solvent vapor is utilized to modify an active layer after the active layer of the organic solar cells is formed, which ensures a flatness and an uniformity thereof and increases a crystallinity of the active layer and an element charge transport rate so that a power conversion efficiency of the large area organic solar cells is increased, a proceeding time is quite short, and the performance thereof is quite obvious. Therefore, the method not only reduces the cost by a large area production but obtains organic solar cells with higher conversion efficiency.

Abstract: A method is disclosed for a flash memory including a plurality of data units includes determining whether to refresh data of the data units according to number of time the data units that are being read when the flash memory is read. The present invention provides methods for flash memory devices and a specialized controller to utilize values stored in counters relating to the number of read instances of corresponding blocks of data units for the selective control of refreshing data blocks when associated counter values exceed a threshold value.

Abstract: A method of fabricating an organic thin film transistor is disclosed, which comprises steps of (S1) forming a gate electrode on a substrate; (S2) forming a gate insulating layer on the gate electrode; (S3) providing a gas on the surface of the gate insulating layer to form hydrophobic molecules on the surface of the gate insulating layer; (S4) forming an organic semiconductor layer, a source electrode, and a drain electrode over the gate insulating layer having hydrophobic molecules thereon, wherein the gas of step (S3) is at least one selected from the group consisting of halogen-substituted hydrocarbon, un-substituted hydrocarbon, and the mixtures thereof. The method of the present invention utilizes gases comprising carbon or fluorine atom to perform surface treatment on the surface of the gate insulating layer, therefore the hydrophobic character of the surface of the gate insulating layer can be enhanced and the electrical properties of the OTFT can be improved.

Abstract: A self-aligned top-gate thin film transistor and a fabrication method thereof. The method includes preparing a substrate having sequentially formed thereon an oxide semiconductor layer, a dielectric layer, and a metallic layer, wherein the oxide semiconductor layer includes first and second connecting regions that are not covered by the dielectric layer and the metallic layer thereon respectively, the first and second connecting regions having a property of a conductor after undergone a heating process or an ultraviolet irradiation; and a source electrode and a drain electrode formed on the substrate and connected to the first and second connecting regions, respectively. Therefore, the contact resistance of the first and second connecting regions can be reduced without the process of ion dopants as required by prior art techniques, thereby simplifying the manufacturing process. Also, the source electrode and the drain electrode can be exactly relocated and further increase performance of the device.

Abstract: A pixel structure including a substrate, a gate, an insulation layer, a metal oxide semiconductor (MOS) layer, a source and a drain, at least one film layer, and a first electrode layer is provided. The gate is disposed on the substrate. The insulation layer covers the gate. The MOS layer is disposed on the insulation layer above the gate. The source and the drain are disposed on the MOS layer. The film layer covers the MOS layer and includes a transparent photocatalytic material, wherein the transparent photocatalytic material blocks ultraviolet light from reaching the MOS layer. The first electrode layer is electrically connected to the source or the drain.

Abstract: A method of fabricating an organic thin film transistor is disclosed, which comprises steps of (S1) forming a gate electrode on a substrate; (S2) forming a gate insulating layer on the gate electrode; (S3) providing a gas on the surface of the gate insulating layer to form hydrophobic molecules on the surface of the gate insulating layer; (S4) forming an organic semiconductor layer, a source electrode, and a drain electrode over the gate insulating layer having hydrophobic molecules thereon, wherein the gas of step (S3) is at least one selected from the group consisting of halogen-substituted hydrocarbon, un-substituted hydrocarbon, and the mixtures thereof. The method of the present invention utilizes gases comprising carbon or fluorine atom to perform surface treatment on the surface of the gate insulating layer, therefore the hydrophobic character of the surface of the gate insulating layer can be enhanced and the electrical properties of the OTFT can be improved.

Abstract: A method for manufacturing a self-aligned thin-film transistor (TFT) is described. Firstly, an oxide gate, a dielectric layer, and a photoresist layer are deposited on a first surface of a transparent substrate in sequence. Then, an ultraviolet light is irradiated on a second surface of the substrate opposite to the first surface to expose the photoresist layer, in which a gate manufactured by the oxide gate serves as a mask, and absorbs the ultraviolet light irradiated on the photoresist layer corresponding to the oxide gate. Then, the exposed photoresist layer is removed, and a transparent conductive layer is deposited on the unexposed photoresist layer and the dielectric layer. Then, a patterning process is executed on the transparent conductive layer to form a source and a drain, and an active layer is formed to cover the source, the drain, and the dielectric layer, so as to finish a self-aligned TFT structure.

Abstract: A patterning process is provided. The patterning process includes the following steps. First, a substrate is provided. Then, a patterned self-assembled monolayer (SAM) is formed on the substrate. Afterwards, an organic material layer is formed over the substrate to cover the self-assembled monolayer. Thereafter, a portion of the organic material layer is removed, wherein the organic material layer in contact with the patterned SAM is retained such that a patterned organic material layer.

Abstract: The invention relates to a method of managing media files received under different transmission modes and related media playback apparatus thereof. The method includes receiving a media file; retrieving media information from the media file regardless of what transmission mode is used when the media file is received; and modifying a media information record corresponding to the media file according to the retrieved media information.