Abstract: An inductor device includes a first coil and a second coil. The first coil includes a first connection member and a plurality of first circles. At least two first circles of the first circles are located at a first area, and half of the first circle of the first circles is located at a second area. The second coil includes a second connection member and a plurality of second circles. At least two second circles of the second circles are located at the second area, and half of the second circle of the second circles is located at the first area. The first connection member is coupled to the at least two first circles and the half of the first circle. The second connection member is coupled to the at least two second circles and the half of the second circle.

Abstract: Semiconductor devices and methods of formation are provided herein. A semiconductor device includes a first inductor, a patterned ground shielding (PGS) proximate the first inductor comprising one or more portions and a first switch configured to couple a first portion of the PGS to a second portion of the PGS. The semiconductor device also has a configuration including a first inductor on a first side of the PGS, a second inductor on a second side of the PGS and a first switch configured to couple a first portion of the PGS to a second portion of the PGS. Selective coupling of portions of the PGS by activating or deactivating switches alters the behavior of the first inductor, or the behavior and interaction between the first inductor and the second inductor. A mechanism is thus provided for selectively configuring a PGS to control inductive or other properties of a circuit.

Abstract: Semiconductor devices and methods of formation are provided herein. A semiconductor device includes a first inductor, a patterned ground shielding (PGS) proximate the first inductor comprising one or more portions and a first switch configured to couple a first portion of the PGS to a second portion of the PGS. The semiconductor device also has a configuration including a first inductor on a first side of the PGS, a second inductor on a second side of the PGS and a first switch configured to couple a first portion of the PGS to a second portion of the PGS. Selective coupling of portions of the PGS by activating or deactivating switches alters the behavior of the first inductor, or the behavior and interaction between the first inductor and the second inductor. A mechanism is thus provided for selectively configuring a PGS to control inductive or other properties of a circuit.

Abstract: An inductor device includes a first coil and a second coil. The first coil includes a first connection member and a plurality of first circles. At least two first circles of the first circles are located at a first area, and half of the first circle of the first circles is located at a second area. The second coil includes a second connection member and a plurality of second circles. At least two second circles of the second circles are located at the second area, and half of the second circle of the second circles is located at the first area. The first connection member is coupled to the at least two first circles and the half of the first circle. The second connection member is coupled to the at least two second circles and the half of the second circle.

Abstract: A semiconductor device includes a first conductive winding over a first substrate. The semiconductor device further includes a second substrate bonded to the first substrate. The semiconductor device further includes a switch in the second substrate. The semiconductor device further includes an inter-level via (ILV) in the second substrate. The semiconductor device further includes a second conductive winding over the second substrate, wherein the second conductive winding includes a conductive line around a central opening, the switch is electrically connected to the second conductive winding on a first side of the opening, and the ILV is electrically connected to the second conductive winding on a second side of the opening opposite the first side.

Abstract: An inductor device includes a first wire, a second wire, and a connector. The first wire includes a first terminal and a second terminal. The first terminal of the first wire is disposed on a first side of the inductor device. The second terminal of the first wire is disposed on a second side of the inductor device. The second wire includes a first terminal and a second terminal. The first terminal of the second wire is disposed on the first side of the inductor device. The second terminal of the second wire is disposed on the second side of the inductor device. The connector couples the second terminal of the first wire and the first terminal of the second wire. The first wire and the second wire are disposed to each other in a rotational symmetry manner on the basis of a center point of the inductor device.

Abstract: An integrated stack transformer is provided, wherein the integrated stack transformer includes a first winding, a second winding and a third winding implemented by a first metal layer, and a fourth winding and a fifth winding implemented by a second metal layer. The second winding is positioned between the first winding and the third winding, the fourth winding substantially overlaps the first winding, the fifth winding substantially overlaps the third winding, and a distance between the fifth winding and the fourth winding is less than a distance between the third winding and the first winding. The first winding, the third winding, the fourth winding and the fifth winding form a part of one of a primary inductor and a secondary inductor of the integrated stack transformer, and the second winding is a part of the other of the primary inductor and the secondary inductor.

Abstract: A method of making a slow wave inductive structure includes depositing a first dielectric layer over a first substrate. The method further includes forming a first conductive winding in the first dielectric layer. The method further includes bonding a second substrate to the first dielectric layer, wherein the second substrate is physically separated from the first conductive winding, and the second substrate has a thickness ranging from about 50 nanometers (nm) to about 150 nm. The method further includes depositing a second dielectric layer over the second substrate. The method further includes forming a second conductive winding in the second dielectric layer, wherein the second substrate is physically separated from the second conductive winding.

Abstract: An integrated inductor is provided. The integrated inductor includes a first winding and a second winding, and has a first end, a second end, and a node. The first winding utilizes the first end and the node as two ends thereof and includes a first coil and a second coil, which do not overlap. The second winding utilizes the second end and the node as two ends thereof and includes a third coil and a fourth coil, which do not overlap. The first coil and the third coil have an overlapping area, and the second coil and the fourth coil have an overlapping area. The first coil is surrounded by the third coil, and the fourth coil is surrounded by the second coil.

Abstract: A semiconductor structure includes a first inductor, a second inductor, and a first input/output (I/O) pad. The first I/O pad is coupled to the first inductor and the second inductor. The first I/O pad, a first central axis of a first magnetic field of the first inductor, and a second central axis of a second magnetic field of the second inductor are disposed sequentially along a first direction.

Abstract: Inductor device includes first and a second coils. First coil is wound into plural first circles. Second coil is wound into plural second circles. First connection member is coupled to first circle between outermost and innermost sides among first circles located at first area and first circle on outermost side among first circles located at second area. Second connection member is coupled to second circle on outermost side among second circles located at first area and second circle between outermost and innermost sides among second circles located at second area. At least two first circles of first circles are located at first area, and half of first circle of first circles is located at second area. Half of second circle of second circles is located at first area, and at least two second circles of second circles are located at second area.

Abstract: An inductor device includes a first wire and a second wire. The first wire includes a first sub-wire and a second sub-wire. The first sub-wire is disposed in a first area. The second sub-wire is disposed in a second area, and the first sub-wire and the second sub-wire are located on different layers. The second wire includes a third sub-wire and a fourth sub-wire. The third sub-wire is disposed in the second area, and located below the second sub-wire. The fourth sub-wire is disposed in the first area, the third sub-wire and the fourth sub-wire are located on different layers, and the fourth sub-wire is located above the first sub-wire.

Abstract: A tank circuit structure includes a first gate layer, a first substrate, a first shielding layer, a first inductor, a second inductor and a first inter metal dielectric (IMD) layer. The first substrate is over the first gate layer. The first shielding layer is over the first gate layer. The first inductor is over the first shielding layer. The second inductor is below the first substrate. The first IMD layer is between the first substrate and the first shielding layer.

Abstract: An inductor device includes a first coil and a second coil. The first coil is wound into a plurality of first circles, and the second coil is wound into a plurality of second circles. At least two of the second circles are interlaced with at least two of the first circles on a first side. The at least two of the second circles are disposed adjacent to each other on the first side. At least one of the first circles is only interlaced with at least one of the second circles on a second side. At least another one of the first circles is only interlaced with at least another one of the second circles on the second side.

Abstract: An inductor device includes a first winding, a second winding, a first connecting structure and a second connecting structure. The first winding includes a first coil and a second coil. The second winding includes a third coil and a fourth coil, the third coil is overlapped with the first coil, and the fourth coil is overlapped with the second coil. The first connecting structure includes a first crossing structure and a second crossing structure. The first crossing structure has a first crossing point and is configured to couple the first coil and the second coil. The second crossing structure has a second crossing point and is configured to couple the third coil and the fourth coil. The first crossing point is not overlapped with the second crossing point. The second connecting structure is configured to couple the second coil and the third coil.

Abstract: An inductor device is disclosed herein. An electrical device is disposed in a first area of the inductor device, and the inductor device includes a first trace and a second trace. The first trace is disposed in a second area. The second trace is disposed in the second area, and coupled to the first trace. The second area is disposed an outer side of the first area, and the first area and the second area are not overlapped with each other.

Abstract: A slow wave inductive structure includes a first substrate. The slow wave inductive structure further includes a first conductive winding over the first substrate. The slow wave inductive structure further includes a second substrate over the first substrate, wherein a distance between the first conductive winding and the second substrate ranges from about 1 micron (?m) to about 2 ?m, and the second substrate comprises polysilicon or doped silicon. The slow wave inductive structure further includes a second conductive winding on an opposite side of the second substrate from the first conductive winding.

Abstract: Semiconductor devices and methods of formation are provided herein. A semiconductor device includes a first inductor, a patterned ground shielding (PGS) proximate the first inductor comprising one or more portions and a first switch configured to couple a first portion of the PGS to a second portion of the PGS. The semiconductor device also has a configuration including a first inductor on a first side of the PGS, a second inductor on a second side of the PGS and a first switch configured to couple a first portion of the PGS to a second portion of the PGS. Selective coupling of portions of the PGS by activating or deactivating switches alters the behavior of the first inductor, or the behavior and interaction between the first inductor and the second inductor. A mechanism is thus provided for selectively configuring a PGS to control inductive or other properties of a circuit.

Abstract: An integrated circuit is provided. The integrated circuit includes a first trace, a second trace and a third trace. The first trace, the second trace and the third trace are each a continuous trace. The first trace, the second trace and the third trace together use only two conductor layers of a semiconductor structure. In a crossing area of the first trace, the second trace and the third trace, the first trace crosses the second trace once, the first trace crosses the third trace once, and the second trace crosses the third trace once.

Abstract: An inductor and an integrated circuit are provided. The inductor includes a first coil, a second coil, and a third coil. The first coil has a first input terminal and a first output terminal, and the first coil is winded in a first direction from the first input terminal to the first output terminal. The second has a second input terminal and a second output terminal, and the second coil is winded in a second direction which is opposite to the first direction from the second input terminal to the second output terminal. The third has a third input terminal and a third output terminal, and the third input terminal is connected to the first input terminal and the second input terminal.