Abstract: The present disclosure relates to a MEMS apparatus with a patterned anti-stiction layer, and an associated method of formation. The MEMS apparatus has a handle substrate defining a first bonding face and a MEMS substrate having a MEMS device and defining a second bonding face. The handle substrate is bonded to the MEMS substrate through a bonding interface with the first bonding face toward the second bonding face. An anti-stiction layer is arranged between the first and the second bonding faces without residing over the bonding interface.

Abstract: A photodetector includes a substrate, at least one nanowire and a cladding layer. The at least one nanowire is disposed on the substrate and has a semiconductor core. The cladding layer is disposed on sidewalls of the semiconductor core and includes an epitaxial semiconductor film in contact with the sidewalls of the semiconductor core, a metal film disposed on the outside of the epitaxial semiconductor film and a high-k material layer disposed on the outside of metal film.

Abstract: The present disclosure, in some embodiments, relates to a method for manufacturing a MEMS apparatus. The method may be performed by forming an anti-stiction layer on one or more respective surfaces of a handle substrate and a MEMS substrate. The anti-stiction layer is patterned, therein defining a patterned anti-stiction layer that uncovers one or more predetermined locations associated with a bonding of the handle substrate to the MEMS substrate. The handle substrate is bonded to the MEMS substrate at the one or more predetermined locations.

Abstract: Disclosed is a method of manufacturing a graphene conductive fabric, which includes mixing a first solvent, a second solvent and nano-graphene sheets, dispersing the nano-graphene sheets with a mechanical force to form a graphene suspension solution; adding at least a curable resin to the graphene suspension solution, dispersing the nano-graphene sheets and the curable resin with the mechanical force to form a graphene resin solution; coating or printing the graphene resin solution on a hydrophobic protective layer, curing the graphene resin solution to form a graphene conductive layer adhered to the hydrophobic protective layer; coating a hot glue layer on the graphene conductive layer; and attaching a fibrous tissue on the hot glue layer, heating and pressing the fibrous tissue to allow the hot glue layer respectively adhere to the graphene conductive layer and the fibrous tissue.

Abstract: A method of manufacturing a semiconductive structure includes receiving a first substrate; disposing an interconnection layer on the first substrate; forming a plurality of conductors over the interconnection layer; filing gaps between the plurality of conductors with a film; forming a barrier layer over the film; removing the barrier layer; and partially removing the film to expose a portion of the interconnection and leave a portion of the interconnection layer covered by the film.

Abstract: The present disclosure, in some embodiments, relates to a method for manufacturing a MEMS apparatus. The method may be performed by forming an anti-stiction layer on one or more respective surfaces of a handle substrate and a MEMS substrate. The anti-stiction layer is patterned, therein defining a patterned anti-stiction layer that uncovers one or more predetermined locations associated with a bonding of the handle substrate to the MEMS substrate. The handle substrate is bonded to the MEMS substrate at the one or more predetermined locations.

Abstract: An optical sensor device is provided. The optical sensor device includes a semiconductor substrate, a trench isolation element, and a photodiode. The semiconductor substrate has a back semiconductor surface and a front semiconductor surface opposing to the back semiconductor surface. The back semiconductor surface has a textured surface. The trench isolation element is extended from the back semiconductor surface to the front semiconductor surface. The photodiode is in the semiconductor substrate.

Abstract: An image sensor includes a first photodiode formed in a first substrate. A first deep-trench isolation (DTI) structure is in the first substrate and surrounds the first photodiode. A first inter-dielectric layer having a first circuit structure is formed on the first substrate. A bonding layer is between the first inter-dielectric layer and a second inter-dielectric layer. The second-inter dielectric layer having a second circuit structure is on the bonding layer. A connection wall is disposed in the first inter-dielectric layer, the bonding layer, and the second inter-dielectric layer to physically connect the first circuit structure and the second circuit structure. A second substrate is disposed on the second inter-dielectric layer. A second photodiode is formed in the second substrate. A second DTI structure is in the second substrate and surrounds the second photodiode.

Abstract: Provided is a graphene additive, having a viscosity between 1000 and 40000 cps and a grind fineness not greater than 15 ?m, and comprising: nano-graphene sheets and a silane coupling agent, wherein a weight ratio of the nano-graphene sheets to the silane coupling agent is 0.1-15:99.9-85, and carbon atoms on a surface of the nano-graphene sheets form chemical bonds Si—O—C with oxygen substituents of the silane coupling agent. The present application further provides a method of preparing the graphene additive.

Abstract: A semiconductive structure includes a first substrate comprising an interconnection layer and a first conductor protruding from the interconnection layer, a second substrate comprising a second conductor bonded with the first conductor, a first cavity between and sealed by the first substrate and the second substrate and the first cavity has a first cavity pressure, a second cavity between and sealed by the first substrate and the second substrate and the second cavity has a second cavity pressure, a first surface of the interconnection layer is a sidewall of the first cavity, wherein the first cavity pressure is less than the second cavity pressure.

Abstract: A graphene thermostatic fabric includes a fibrous tissue and a graphene thermostatic layer. The fibrous tissue has a first tissue surface, a second tissue surface and an interspace between the first tissue surface and the second tissue surface. The graphene thermostatic layer adheres to the first tissue surface, fills a part of the interspace, and includes at least a hydrophobic resin and nano-graphene sheets dispersed in the hydrophobic resin. A thermal conductivity of the graphene thermostatic layer varies with a change of an ambient temperature, and the thermal conductivity of the graphene thermostatic layer perpendicular to the first tissue surface is less than the thermal conductivity of the graphene thermostatic layer parallel to the first tissue surface. A method of manufacturing the graphene thermostatic fabric is further provided.

Abstract: An intra prediction mode determining device includes: an intra prediction circuit, generating, according to a plurality of prediction modes, a plurality of sets of predicted pixel values of a target prediction unit by using a set of original pixel values of a neighbor prediction unit as a set of adjacent pixel values; a residual calculating circuit, calculating a plurality of residuals based on a set of the original pixel values and the plurality of sets of predicted pixel values of the target prediction unit; and a mode selecting circuit, selecting from the plurality of prediction modes one prediction mode as a candidate mode according to the plurality of sets of residuals.

Abstract: A graphene dispersion paste has a viscosity in a range from 50,000 to 350,000 cps and a scraper fineness less than 20 ?m, and includes graphene sheets, a solvent and a first polymer, wherein the graphene sheets have a bulk density in a range from 0.005 to 0.05 g/cm3, a thickness in a range from 0.68 to 10 nm, and a plane lateral dimension in a range from 1 to 100 ?m. The present application further provides methods of preparing and using the graphene dispersion paste.

Abstract: A graphene dispersion paste has a viscosity in a range from 50,000 to 350,000 cps and a scraper fineness less than 20 ?m, and includes graphene sheets, a solvent and a first polymer, wherein the graphene sheets have a bulk density in a range from 0.005 to 0.05 g/cm3, a thickness in a range from 0.68 to 10 nm, and a plane lateral dimension in a range from 1 to 100 ?m. The present application further provides methods of preparing and using the graphene dispersion paste.

Abstract: A method for fabricating an image sensor is disclosed. A substrate having a frontside surface and a backside surface is provided. A plurality of photoelectric transducer elements is disposed on the frontside surface. A dielectric isolation structure extends into the substrate from the frontside surface so as to isolate the plurality of photoelectric transducer elements from one another. The dielectric isolation structure is recess etched from the backside surface so as to form a recessed trench region in the backside surface. A grid material layer is deposited on the backside surface. The recessed trench region is completely filled with the grid material layer. The grid material layer is subjected to a lithographic process and an etching process so as to form a grid structure on the backside surface.

Abstract: A mobile device includes a housing including a metal case and an antenna mounted inside the housing. The antenna includes a first radiation portion disposed on a first surface of a substrate, a second radiation portion disposed on an opposing surface of the substrate, and a ground element, wherein the second radiation portion includes a first grounding point and a second grounding point that are each electrically connected to the metal case via the ground element.

Abstract: The present disclosure relates to a MEMS apparatus with a patterned anti-stiction layer, and an associated method of formation. The MEMS apparatus has a handle substrate defining a first bonding face and a MEMS substrate having a MEMS device and defining a second bonding face. The handle substrate is bonded to the MEMS substrate through a bonding interface with the first bonding face toward the second bonding face. An anti-stiction layer is arranged between the first and the second bonding faces without residing over the bonding interface.

Abstract: An image sensor is disclosed. The image sensor includes a substrate having a frontside surface and a backside surface. A plurality of photoelectric transducer elements is disposed on the frontside surface. A dielectric isolation structure extends into the substrate from the frontside surface so as to isolate the plurality of photoelectric transducer elements from one another. A grid structure is disposed on the backside surface. The grid structure has an embedded portion extending into the substrate from the backside surface. The embedded portion of the grid structure is aligned with and in direct contact with the dielectric isolation structure.

Abstract: A mobile device includes a first nonconductive supporting element, a second nonconductive supporting element, and an antenna structure. The first nonconductive supporting element and the second nonconductive supporting element are adjacent to each other. The first nonconductive supporting element and the second nonconductive supporting element have different heights. The antenna structure is formed on the first nonconductive supporting element and the second nonconductive supporting element. The antenna element includes a feeding connection element, a first radiation element, and a second radiation element. The feeding connection element is coupled to a feeding point. The first radiation element and the second radiation element are coupled to the feeding connection element. The feeding connection element is disposed between the first radiation element and the second radiation element.

Abstract: A semiconductive structure includes a first substrate comprising an interconnection layer and a first conductor protruding from the interconnection layer, a second substrate comprising a second conductor bonded with the first conductor, a first cavity between and sealed by the first substrate and the second substrate and the first cavity has a first cavity pressure, a second cavity between and sealed by the first substrate and the second substrate and the second cavity has a second cavity pressure, a first surface of the interconnection layer is a sidewall of the first cavity, wherein the first cavity pressure is less than the second cavity pressure.