Abstract: A semiconductor device includes a substrate and two fins protruding from the substrate. Each fin includes two source/drain (S/D) regions and a channel region. Each fin includes a top surface that remains flat across the S/D regions and the channel region. The semiconductor device also includes a gate stack engaging each fin at the respective channel region, a first dielectric layer on sidewalls of the gate stack, a first epitaxial layer over top and sidewall surfaces of the S/D regions of the two fins, and a second epitaxial layer over top and sidewall surfaces of the first epitaxial layer.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a substrate, at least two gate structures disposed over the substrate, each of the at least two gate structures including a gate electrode and a spacer disposed along sidewalls of the gate electrode, wherein the spacer includes a refill portion and a bottom portion, the refill portion of the spacer has a funnel shape such that a top surface of the refill portion of the spacer is larger than a bottom surface of the refill portion of the spacer, and a source/drain contact disposed over the substrate and between the spacers of the at least two gate structures.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a substrate, at least two gate structures disposed over the substrate, each of the at least two gate structures including a gate electrode and a spacer disposed along sidewalls of the gate electrode, wherein the spacer includes a refill portion and a bottom portion, the refill portion of the spacer has a funnel shape such that a top surface of the refill portion of the spacer is larger than a bottom surface of the refill portion of the spacer, and a source/drain contact disposed over the substrate and between the spacers of the at least two gate structures.

Abstract: An electronic device is provided. The electronic device includes a substrate, a data line and a gate line that are disposed on the substrate. The data line extends in a first direction. The electronic device also includes a thin film transistor. The thin film transistor is disposed on the substrate and includes a semiconductor structure. The semiconductor structure includes a channel region, a source region, and a drain region. The gate line overlaps the channel region. The source region is electrically connected to the data line. The source region and the drain region are located on opposite sides of the gate line. The source region includes a first portion extending in a second direction, and an acute angle is formed between the first direction and the second direction.

Abstract: A measurement assistance system and method are provided. The measurement assistance system includes: a measurement platform, having an operation area configured for a to-be-measured object and a measurement tool to be placed; a camera, arranged on the measurement platform and configured to obtain a measurement image; and a server module, electrically connected to the camera and configured to execute a measurement tool identification program, a measurement part identification program, and a measurement posture identification program according to the measurement image, and determine whether a measurement tool appearance image, a measurement part image, and a measurement posture image are correct. The server module has a processing unit. When the measurement tool appearance image, the measurement part image, and the measurement posture image are all correct, a measurement result is generated according to measurement data.

Abstract: A method for enhancing kernel reparameterization of a non-linear machine learning model includes providing a predefined machine learning model, expanding a kernel of the predefined machine learning model with a non-linear network for convolution operation of the predefined machine learning model to generate the non-linear machine learning model, training the non-linear machine learning model, reparameterizing the non-linear network back to a kernel for convolution operation of the non-linear machine learning model to generate a reparameterized machine learning model, and deploying the reparameterized machine learning model to an edge device.

Abstract: A method for removing branches from trained deep learning models is provided. The method includes steps (i)-(v). In step (i), a trained model is obtained. The trained model has a branch structure involving one or more original convolutional layers and a shortcut connection. In step (ii), the shortcut connection is removed from the branch structure. In step (iii), a reparameterization model is built by linearly expanding each of the original convolutional layers into a reparameterization block in the reparameterization model. In step (iv), parameters of the reparameterization blocks are optimized by training the reparameterization model. In step (v), each of the optimized reparameterization blocks is transformed into a reparameterized convolutional layer to form a branchless structure that replaces the branch structure in the trained model.

Abstract: In aspects of the disclosure, a method, a system, and a computer-readable medium are provided. The method of building a kernel reparameterization for replacing a convolution-wise operation kernel in training of a neural network comprises selecting one or more blocks from tensor blocks and operations; and connecting the selected one or more blocks with the selected operations to build the kernel reparameterization. The kernel reparameterization has a dimension same as that of the convolution-wise operation kernel.

Abstract: A reparameterization method for initializing a machine learning model includes initializing a prefix layer of a first low dimensional layer in the machine learning model and a postfix layer of the first low dimensional layer, inverting the prefix layer to generate an inverse prefix layer of the first low dimensional layer, inverting the postfix layer to generate an inverse postfix layer of the first low dimensional layer, combining the inverse prefix layer, the first low dimensional layer and the inverse postfix layer to form a high dimensional layer, generating parallel operation layers from the high dimensional layer, and assigning initial weights to the parallel operation layers.

Abstract: A device includes a fin extending from a semiconductor substrate; a gate stack over the fin; a first spacer on a sidewall of the gate stack; a source/drain region in the fin adjacent the first spacer; an inter-layer dielectric layer (ILD) extending over the gate stack, the first spacer, and the source/drain region, the ILD having a first portion and a second portion, wherein the second portion of the ILD is closer to the gate stack than the first portion of the ILD; a contact plug extending through the ILD and contacting the source/drain region; a second spacer on a sidewall of the contact plug; and an air gap between the first spacer and the second spacer, wherein the first portion of the ILD extends across the air gap and physically contacts the second spacer, wherein the first portion of the ILD seals the air gap.

Abstract: An automatic material changing and welding system for stamping materials includes a welding transfer sliding table and a welding platform. The automatic material changing device further includes a feeding system. The feeding system includes a double-head uncoiling machine, an automatic feeding machine and a flattening machine. The automatic material changing device is used for automatic feeding for a stamping machine. The system triggers a material changing signal through a sensor to control and integrate the welding transfer sliding table and the welding platform to act to execute a welding procedure, so that the stamping materials are in welding connection with new and old coiled materials through a welding connection plate to realize continuous production operation of an automated stamping production line.

Abstract: A hand tool for bolts fastening includes a block-shaped jig body, a first bolt hole is disposed in the jig body laterally and a second bolt hole is disposed in the jig body longitudinally, an end of the second bolt hole is in communication with the first bolt hole, the second bolt hole allows a packing bolt to pass through and be screwed, a hemispherical suppression portion is disposed at an end of the packing bolt, the first bolt hole allows a to-be-fastened bolt to be screwed, the suppression portion of the packing bolt is pressed down on a selected position of the bolt, to cause a crest at the selected position to expand outward, so that interference occurs when the bolt is screwed with a bolt hole or a nut, to increase a torque force required to make the bolt come off.

Abstract: A cutting fluid digital monitoring and management system and method are provided, applicable to a computer numerical control (CNC) machining device. The CNC machining device has a cutting fluid tank configured to accommodate a cutting fluid. The cutting fluid digital monitoring and management system includes: a detection tank, configured to extract a cutting fluid from the cutting fluid tank through a motor and an electrically controlled water valve; a concentration sensing module, a pH sensing module, a water hardness sensing module, and a temperature sensing module, respectively configured to obtain a concentration, a pH value, a hardness, and a temperature of the cutting fluid; a processing module, configured to generate a monitoring integration value, compare the monitoring integration value with a standard model, and generate an adjustment signal; and an adjustment module, configured to actively adjust a variable parameter of the cutting fluid according to the adjustment signal.

Abstract: A method includes etching a first semiconductor fin and a second semiconductor fin to form first recesses. The first and the second semiconductor fins have a first distance. A third semiconductor fin and a fourth semiconductor fin are etched to form second recesses. The third and the fourth semiconductor fins have a second distance equal to or smaller than the first distance. An epitaxy is performed to simultaneously grow first epitaxy semiconductor regions from the first recesses and second epitaxy semiconductor regions from the second recesses. The first epitaxy semiconductor regions are merged with each other, and the second epitaxy semiconductor regions are separated from each other.

Abstract: A device includes a fin extending from a semiconductor substrate; a gate stack over the fin; a first spacer on a sidewall of the gate stack; a source/drain region in the fin adjacent the first spacer; an inter-layer dielectric layer (ILD) extending over the gate stack, the first spacer, and the source/drain region, the ILD having a first portion and a second portion, wherein the second portion of the ILD is closer to the gate stack than the first portion of the ILD; a contact plug extending through the ILD and contacting the source/drain region; a second spacer on a sidewall of the contact plug; and an air gap between the first spacer and the second spacer, wherein the first portion of the ILD extends across the air gap and physically contacts the second spacer, wherein the first portion of the ILD seals the air gap.

Abstract: An electronic device is provided by the present disclosure. The electronic device includes a substrate; a first transistor disposed on the substrate and including a first semiconductor layer and a gate electrode; a first insulating layer disposed between the first semiconductor layer and the gate electrode; a second insulating layer disposed on the first insulating layer, wherein the first semiconductor layer and the gate electrode are located between the substrate and the second insulating layer; a barrier layer disposed on the second insulating layer; and a second transistor disposed on the barrier layer and including a second semiconductor layer, wherein the barrier layer is disposed between the second semiconductor layer and the second insulating layer.

Abstract: A method includes etching a first semiconductor fin and a second semiconductor fin to form first recesses. The first and the second semiconductor fins have a first distance. A third semiconductor fin and a fourth semiconductor fin are etched to form second recesses. The third and the fourth semiconductor fins have a second distance equal to or smaller than the first distance. An epitaxy is performed to simultaneously grow first epitaxy semiconductor regions from the first recesses and second epitaxy semiconductor regions from the second recesses. The first epitaxy semiconductor regions are merged with each other, and the second epitaxy semiconductor regions are separated from each other.

Abstract: An automatic material changing and welding system for stamping materials includes a welding transfer sliding table and a welding platform. The automatic material changing device further includes a feeding system. The feeding system includes a double-head uncoiling machine, an automatic feeding machine and a flattening machine. The automatic material changing device is used for automatic feeding for a stamping machine. The system triggers a material changing signal through a sensor to control and integrate the welding transfer sliding table and the welding platform to act to execute a welding procedure, so that the stamping materials are in welding connection with new and old coiled materials through a welding connection plate to realize continuous production operation of an automated stamping production line.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a substrate, at least two gate structures disposed over the substrate, each of the at least two gate structures including a gate electrode and a spacer disposed along sidewalls of the gate electrode, wherein the spacer includes a refill portion and a bottom portion, the refill portion of the spacer has a funnel shape such that a top surface of the refill portion of the spacer is larger than a bottom surface of the refill portion of the spacer, and a source/drain contact disposed over the substrate and between the spacers of the at least two gate structures.

Abstract: A device includes a fin extending from a semiconductor substrate; a gate stack over the fin; a first spacer on a sidewall of the gate stack; a source/drain region in the fin adjacent the first spacer; an inter-layer dielectric layer (ILD) extending over the gate stack, the first spacer, and the source/drain region, the ILD having a first portion and a second portion, wherein the second portion of the ILD is closer to the gate stack than the first portion of the ILD; a contact plug extending through the ILD and contacting the source/drain region; a second spacer on a sidewall of the contact plug; and an air gap between the first spacer and the second spacer, wherein the first portion of the ILD extends across the air gap and physically contacts the second spacer, wherein the first portion of the ILD seals the air gap.